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11. 发明授权

US09685404B2 Back-end electrically programmable fuse 有权
公开(公告)号：US09685404B2
公开(公告)日：2017-06-20
申请号：US13348011
申请日：2012-01-11
申请人： Junjing Bao , Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald Filippi , Stephan Grunow , Naftali E. Lustig , Dan Moy , Andrew H. Simon
发明人： Junjing Bao , Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald Filippi , Stephan Grunow , Naftali E. Lustig , Dan Moy , Andrew H. Simon
IPC分类号： H01L21/768 , H01L23/525 , H01L23/522 , H01H85/02
CPC分类号： H01L23/5256 , H01H2085/0275 , H01L21/76805 , H01L21/76807 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.

12. 发明申请

US20130176073A1 BACK-END ELECTRICALLY PROGRAMMABLE FUSE 有权
标题翻译：后端电可编程保险丝
公开(公告)号：US20130176073A1
公开(公告)日：2013-07-11
申请号：US13348011
申请日：2012-01-11
申请人： Junjing Bao , Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald Filippi , Stephan Grunow , Naftali E. Lustig , Dan Moy , Andrew H. Simon
发明人： Junjing Bao , Griselda Bonilla , Kaushik Chanda , Samuel S. Choi , Ronald Filippi , Stephan Grunow , Naftali E. Lustig , Dan Moy , Andrew H. Simon
IPC分类号： H01H37/76 , H01L21/768 , B44C1/22 , H01L23/525
CPC分类号： H01L23/5256 , H01H2085/0275 , H01L21/76805 , H01L21/76807 , H01L21/76811 , H01L21/76816 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A BEOL e-fuse is disclosed which reliably blows in the via and can be formed even in the tightest pitch BEOL layers. The BEOL e-fuse can be formed utilizing a line first dual damascene process to create a sub-lithographic via to be the programmable link of the e-fuse. The sub-lithographic via can be patterned using standard lithography and the cross section of the via can be tuned to match the target programming current.
摘要翻译：公开了一种BEOL电子熔断器，其可靠地吹入通孔并且甚至可以在最窄的节距BEOL层中形成。 BEOL电子熔断器可以利用线路第一双镶嵌工艺形成，以创建一个亚光刻通孔，作为电子熔丝的可编程链路。亚光刻通孔可以使用标准光刻图案化，并且通孔的横截面可以被调谐以匹配目标编程电流。

13. 发明申请

US20130307151A1 METHOD TO RESOLVE HOLLOW METAL DEFECTS IN INTERCONNECTS 有权
标题翻译：在互连中解决中空金属缺陷的方法
公开(公告)号：US20130307151A1
公开(公告)日：2013-11-21
申请号：US13472555
申请日：2012-05-16
申请人： Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
发明人： Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76849 , H01L21/76832 , H01L21/76834 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.
摘要翻译：一种在互连和结构中修复空心金属空隙缺陷的方法。抛光互连后，中空金属空隙缺陷变得可见。缺陷的位置在很大程度上是可预测的。修复方法将掩模材料图案化成可能出现缺陷的互连（以及有时相邻的介电层）上的开口。在掩模孔中形成局部金属盖，以修复缺陷。电介质盖覆盖局部金属盖和形成在相邻电介质层中的任何凹陷。

14. 发明授权

US09034664B2 Method to resolve hollow metal defects in interconnects 有权
标题翻译：解决互连中空金属缺陷的方法
公开(公告)号：US09034664B2
公开(公告)日：2015-05-19
申请号：US13472555
申请日：2012-05-16
申请人： Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
发明人： Griselda Bonilla , Junjing Bao , Samuel S. Choi , Ronald G. Filippi , Naftali E. Lustig , Andrew H. Simon
IPC分类号： H01L21/00 , H01L21/4763 , H01L21/44 , H01L21/768 , H01L23/528 , H01L23/532
CPC分类号： H01L21/76849 , H01L21/76832 , H01L21/76834 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are largely predictable. A repair method patterns a mask material to have openings over the interconnects (and, sometimes, the adjacent dielectric layer) where defects are likely to appear. A local metal cap is formed in the mask openings to repair the defect. A dielectric cap covers the local metal cap and any recesses formed in the adjacent dielectric layer.
摘要翻译：一种在互连和结构中修复空心金属空隙缺陷的方法。抛光互连后，中空金属空隙缺陷变得可见。缺陷的位置在很大程度上是可预测的。修复方法将掩模材料图案化成可能出现缺陷的互连（和有时相邻的介电层）上的开口。在掩模孔中形成局部金属盖，以修复缺陷。电介质盖覆盖局部金属盖和形成在相邻电介质层中的任何凹陷。

15. 发明申请

US20120146224A1 Semiconductor having interconnects with improved mechanical properties by insertion of nanoparticles 失效
标题翻译：具有通过插入纳米颗粒而具有改善的机械特性的互连的半导体
公开(公告)号：US20120146224A1
公开(公告)日：2012-06-14
申请号：US13362292
申请日：2012-01-31
申请人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
发明人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
IPC分类号： H01L23/538
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/02203 , H01L21/02348 , H01L21/3105 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.
摘要翻译：在BEOL工艺中，UV辐射用于超低k（ULK）电介质的固化过程中。该辐射穿过ULK材料并到达其下方的盖膜。 UV光和膜之间的相互作用导致盖膜的性质的改变。特别令人关切的是，帽的应力状态从压缩到拉伸应力的变化。这导致ULK膜的介电盖接口和机械故障较弱。将一层纳米颗粒插入盖和ULK膜之间。纳米粒子吸收紫外线，然后才能损坏盖膜，从而保持ULK电介质的机械完整性。

16. 发明授权

US5337015A In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage 失效
标题翻译：使用低振幅输入电压进行化学机械抛光的原位端点检测方法和装置
公开(公告)号：US5337015A
公开(公告)日：1994-08-09
申请号：US75628
申请日：1993-06-14
申请人： Naftali E. Lustig , Randall M. Feenstra , William L. Guthrie
发明人： Naftali E. Lustig , Randall M. Feenstra , William L. Guthrie
IPC分类号： B24B37/013 , G01B7/34 , G01D5/24 , G01R27/26
CPC分类号： B24B37/013 , G01B7/345 , G01D5/2405
摘要： An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.
摘要翻译：公开了一种在半导体晶片的顶表面上的电介质层的用于化学机械抛光（CMP）的原位厚度监测/终点检测方法和装置。该装置包括中心和保护电极以及相关联的电子电路，包括用于将与电介质层厚度成反比的电流转换成对应的模拟电压的高频低电压信号发生装置。当晶片被抛光时，位置检测装置触发模数转换器将模拟电压转换为数字信号，同时晶片位于检测区域内。控制装置收集与用于处理的厚度数据相对应的数字信号和CMP装置控制。

17. 发明授权

US08384219B2 Semiconductor having interconnects with improved mechanical properties by insertion of nanoparticles 失效
标题翻译：具有通过插入纳米颗粒而具有改善的机械特性的互连的半导体
公开(公告)号：US08384219B2
公开(公告)日：2013-02-26
申请号：US13362292
申请日：2012-01-31
申请人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
发明人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
IPC分类号： H01L23/538
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/02203 , H01L21/02348 , H01L21/3105 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.
摘要翻译：在BEOL工艺中，UV辐射用于超低k（ULK）电介质的固化过程中。该辐射穿过ULK材料并到达其下方的盖膜。 UV光和膜之间的相互作用导致盖膜的性质的改变。特别令人关切的是，帽的应力状态从压缩到拉伸应力的变化。这导致ULK膜的介电盖接口和机械故障较弱。将一层纳米颗粒插入盖和ULK膜之间。纳米粒子吸收紫外线，然后才能损坏盖膜，从而保持ULK电介质的机械完整性。

18. 发明授权

US5470661A Diamond-like carbon films from a hydrocarbon helium plasma 失效
标题翻译：来自烃氦等离子体的类金刚石碳膜
公开(公告)号：US5470661A
公开(公告)日：1995-11-28
申请号：US1374
申请日：1993-01-07
申请人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
发明人： Fredric D. Bailey , Douglas A. Buchanan , Alessandro C. Callegari , Howard M. Clearfield , Fuad E. Doany , Donis G. Flagello , Harold J. Hovel , Douglas C. Latulipe, Jr. , Naftali E. Lustig , Andrew T. S. Pomerene , Sampath Purushothaman , Christopher M. Scherpereel , David E. Seeger , Jane M. Shaw
IPC分类号： G03F1/08 , C01B31/06 , C08J7/06 , C23C8/26 , C23C8/50 , C23C16/26 , C23C16/27 , C23C16/50 , C30B29/04 , G02B1/10 , G11B5/255 , H01L21/31 , H01L21/314 , B24B3/02
CPC分类号： C23C16/26 , G02B1/105 , G11B5/255 , Y10S427/104 , Y10S427/106 , Y10T428/30
摘要： The present invention relates to an improved method of depositing a diamond-like carbon film onto a substrate by low temperature plasma-enhanced chemical vapor deposition (PECVD) from a hydrocarbon/helium plasma. More specifically, the diamond like carbon films of the present invention are deposited onto the substrate by employing acetylene which is heavily diluted with helium as the plasma gas. The films formed using the process of the present invention are characterized as being amorphous and having dielectric strengths comparable to those normally observed for diamond films. More importantly, however is that the films produced herein are thermally stable, optically transparent, absorbent in the ultraviolet range and hard thus making them extremely desirable for a wide variety of applications.
摘要翻译：本发明涉及通过来自烃/氦等离子体的低温等离子体增强化学气相沉积（PECVD）将金刚石状碳膜沉积到衬底上的改进方法。更具体地说，本发明的类金刚石碳膜通过采用氦气作为等离子体气体大量稀释的乙炔沉积在基板上。使用本发明的方法形成的膜的特征在于是无定形的并且具有与通常对于金刚石膜观察到的那些相当的介电强度。然而，更重要的是，本文制造的膜是热稳定的，光学透明的，在紫外范围内是吸收性的并且是硬的，从而使得它们对于各种各样的应用是非常需要的。

19. 发明授权

US5317190A Oxygen assisted ohmic contact formation to N-type gallium arsenide 失效
标题翻译：氧辅助欧姆接触形成N型砷化镓
公开(公告)号：US5317190A
公开(公告)日：1994-05-31
申请号：US782683
申请日：1991-10-25
申请人： Aaron J. Fleischman , Naftali E. Lustig , Robert G. Schad
发明人： Aaron J. Fleischman , Naftali E. Lustig , Robert G. Schad
IPC分类号： H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45 , H01L29/400
CPC分类号： H01L29/452 , H01L21/28575
摘要： This invention describes a low resistance contact structure to n-type GaAs and a method for making such a contact structure. The contact structure is formed by depositing successive layers of Ni, Au, Ge, and Ni. A fifth layer is then deposited on the first four layers. The fifth layer is a metallic tungsten oxide. The metallic tungsten oxide is formed by sputtering tungsten onto the 4 layer stack in a low pressure argon plus oxygen atmosphere. The resulting 5 layer stack is then annealed in a rapid thermal anneal (RTA) process. The RTA process heats the stack for 5 seconds at 600 degrees. The resulting structure consists of an intermetallic NiGe compound having a small amount of a AuGa compound dispersed within it and being covered by a metallic tungsten oxide film. The oxygen from the metallic tungsten oxide film acts as a gettering mechanism to create gallium vacancies in the GaAs lattice structure during the RTA process. The oxygen forms a compound with gallium which is sandwiched between the metallic tungsten layer and the NiGe metallurgy. The sheet resistance of the contact metallurgy is low because the metallic tungsten oxide film is substantially thicker than that required to provide oxygen for the gettering process. The contact resistance to the n-type GaAs is low because the oxygen acts in a similar fashion to gold and creates more gallium vacancies in the GaAs. These vacancies are filled with an n-type dopant (Ge), supplied by the contact metallurgy, to create a better ohmic contact. The contact structure is reliable because there is a low gold content in the contact and because the nickel stabilizes the germanium which is not used for filling the gallium vacancies in the GaAs lattice.
摘要翻译：本发明描述了对n型GaAs的低电阻接触结构和制造这种接触结构的方法。接触结构通过沉积Ni，Au，Ge和Ni的连续层而形成。然后将第五层沉积在前四层上。第五层是金属氧化钨。通过在低压氩气和氧气气氛中将钨溅射到4层叠层上形成金属氧化钨。然后将所得的5层堆叠在快速热退火（RTA）工艺中退火。 RTA过程以600度加热堆叠5秒钟。所得结构由具有少量分散在其内并由金属氧化钨膜覆盖的AuGa化合物的金属间NiGe化合物组成。来自金属氧化钨膜的氧气作为吸气机制，在RTA工艺期间产生GaAs晶格结构中的镓空位。氧气与金属钨层和NiGe冶金之间形成与镓的化合物。接触冶金的薄层电阻低，因为金属氧化钨薄膜比为吸气过程提供氧气所需的金属氧化物薄膜要厚。对n型GaAs的接触电阻很低，因为氧以与金类似的方式起作用，并在GaAs中产生更多的镓空位。这些空位填充有由接触冶金提供的n型掺杂剂（Ge），以产生更好的欧姆接触。接触结构是可靠的，因为接触中的金含量低，并且因为镍使不稳定锗不能用于填充GaAs晶格中的镓空位。

20. 发明申请

US20120068315A1 METHOD OF IMPROVING MECHANICAL PROPERTIES OF SEMICONDUCTOR INTERCONNECTS WITH NANOPARTICLES 失效
标题翻译：用纳米颗粒改善半导体互连的机械性能的方法
公开(公告)号：US20120068315A1
公开(公告)日：2012-03-22
申请号：US12885596
申请日：2010-09-20
申请人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
发明人： Junjing Bao , Tien-Jen J. Cheng , Naftali E. Lustig
IPC分类号： H01L23/552 , H01L21/768
CPC分类号： H01L21/76829 , H01L21/02126 , H01L21/02203 , H01L21/02348 , H01L21/3105 , H01L21/76832 , H01L23/53295 , H01L2924/0002 , Y10S438/96 , H01L2924/00
摘要： In a BEOL process, UV radiation is used in a curing process of ultra low-k (ULK) dielectrics. This radiation penetrates through the ULK material and reaches the cap film underneath it. The interaction between the UV light and the film leads to a change the properties of the cap film. Of particular concern is the change in the stress state of the cap from compressive to tensile stress. This leads to a weaker dielectric-cap interface and mechanical failure of the ULK film. A layer of nanoparticles is inserted between the cap and the ULK film. The nanoparticles absorb the UV light before it can damage the cap film, thus maintaining the mechanical integrity of the ULK dielectric.
摘要翻译：在BEOL工艺中，UV辐射用于超低k（ULK）电介质的固化过程中。该辐射穿过ULK材料并到达其下方的盖膜。 UV光和膜之间的相互作用导致盖膜的性质的改变。特别令人关切的是，帽的应力状态从压缩到拉伸应力的变化。这导致ULK膜的介电盖接口和机械故障较弱。将一层纳米颗粒插入盖和ULK膜之间。纳米粒子吸收紫外线，然后才能损坏盖膜，从而保持ULK电介质的机械完整性。

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