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11. 发明授权

US07932611B2 Device for alternately contacting two wafers 有权
标题翻译：用于交替接触两个晶片的装置
公开(公告)号：US07932611B2
公开(公告)日：2011-04-26
申请号：US10581819
申请日：2004-12-02
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： H01L23/48
CPC分类号： H01L23/10 , B23K26/57 , B23K35/262 , B23K35/3013 , B23K2101/40 , H01L21/50 , H01L25/0657 , H01L25/50 , H01L2224/16 , H01L2924/01079
摘要： A method and device for alternately contacting two wafer-like component composite arrangements, in which the two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metallizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement , so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.
摘要翻译：用于交替接触两个晶片状部件复合布置的方法和装置，其中在其相对的接触表面上设置有接触金属化的双组分复合布置通过它们的接触金属化进入覆盖位置以形成接触对，其中定位要接合在一起的接触金属化彼此压靠，接触金属化通过将组件复合结构中的一个的后部暴露于激光辐射而接触，激光辐射的波长被选择为吸收程度的函数的组件复合布置，使得激光辐射通过暴露于后面的激光辐射的组件复合结构的传输基本上被抑制或激光辐射的吸收基本上在一个或两个组件复合材料的接触金属化中发生安排

12. 发明授权

US06955943B2 Method for producing a substrate arrangement 失效
标题翻译：制造基板装置的方法
公开(公告)号：US06955943B2
公开(公告)日：2005-10-18
申请号：US10362862
申请日：2002-06-26
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： H01L21/60 , H01L21/68 , H05K3/34 , H01L21/44
CPC分类号： H05K3/3436 , H01L21/6835 , H01L24/11 , H01L24/81 , H01L2224/05569 , H01L2224/05573 , H01L2224/11003 , H01L2224/11334 , H01L2224/1147 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13099 , H01L2224/16 , H01L2224/81801 , H01L2924/00013 , H01L2924/01013 , H01L2924/01033 , H01L2924/01068 , H01L2924/014 , H01L2924/12042 , H05K3/3478 , H05K3/3494 , H05K2201/0379 , H05K2201/10977 , H05K2203/041 , H05K2203/043 , H05K2203/107 , Y02P70/613 , H01L2924/00014 , H01L2924/00
摘要： A method is provided for producing a substrate arrangement. The process includes the preparation of a substrate and bringing connecting surfaces of the substrate into contact with inner contacts of a wiring layer, the application of contact material to outer contacts of the wiring layer defining an outer connecting surface arrangement to form base contact bumps (31) and the application of joining material to the base contact bumps to form contact bump tops joined to the base contact bumps, wherein the joining material is applied as joining material moldings (35) and the contact bump tops are formed by at least partial melting of the joining material moldings by the action of laser energy.
摘要翻译：提供了一种用于制造衬底布置的方法。该方法包括制备衬底并使衬底的连接表面与布线层的内部触点接触，将接触材料施加到限定外部连接表面布置的布线层的外部触点，以形成基部接触凸块（31 ）和将接合材料施加到基部接触凸起以形成接合到基部接触凸点的接触凸起顶部，其中接合材料作为接合材料模制件（35）施加，并且接触凸起顶部通过至少部分熔化形成通过激光能量的作用使接合材料成型。

13. 发明授权

US08256131B2 Method and device for drying circuit substrates 有权
标题翻译：电路基板干燥方法及装置
公开(公告)号：US08256131B2
公开(公告)日：2012-09-04
申请号：US10582421
申请日：2004-12-22
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： F26B3/30
CPC分类号： H01L21/67034 , F26B3/30
摘要： Method and device for drying circuit substrates (13), in particular semiconductor substrates, in which a circuit surface (30) of the circuit substrate is flushed using a flushing liquid (10) in a flushing step and the circuit surface is dried in a subsequent drying step, the circuit substrate being moved in the flushing step in the direction of its planar extension transversely and in relation to a liquid level (28) of the flushing liquid in such a way that a liquid meniscus forms at a transition area between the circuit surface and the liquid level, which changes because of the relative movement, and thermal radiation (36) is applied to the transition area wetted by the liquid meniscus in the drying step.
摘要翻译：用于干燥电路基板（13）的方法和装置，特别是在冲洗步骤中使用冲洗液（10）冲洗电路基板的电路表面（30）的电路基板（13），并且电路表面随后被干燥干燥步骤，电路基板在冲洗步骤中沿其平面延伸方向横向移动并相对于冲洗液体的液面（28）移动，使得液体弯液面在电路之间的过渡区域处形成表面和由于相对运动而变化的液面，并且在干燥步骤中将热辐射（36）施加到由液体弯液面润湿的过渡区域。

14. 发明申请

US20080302863A1 Method and Device for Transferring a Solder Deposit Configuration 有权
标题翻译：用于传送焊料沉积配置的方法和装置
公开(公告)号：US20080302863A1
公开(公告)日：2008-12-11
申请号：US11666188
申请日：2005-09-26
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： B23K31/02 , B23K3/06
CPC分类号： B23K3/0623 , H05K3/3478 , H05K2201/10734 , H05K2203/0338 , H05K2203/041 , H05K2203/082
摘要： Method and device for transferring a solder deposit configuration having multiple solder deposits onto a terminal surface configuration of a contact surface of a substrate (36) using a removal of multiple solder deposits from a solder deposit reservoir (25) accommodated in a solder deposit receptacle unit (11) via an isolation unit (12), which is implemented like a template and is situated above the solder deposit reservoir, to implement the solder deposit configuration implemented corresponding to the terminal surface configuration, and using a subsequent transfer of the solder deposit configuration onto the terminal surface configuration of the substrate, the solder deposit reservoir being impinged by partial vacuum through template openings (15) of the isolation unit to transfer the solder deposits from the solder deposit reservoir into the isolation unit, the solder deposit reservoir (25) being ventilated via a floor wall (20) situated diametrically opposite the isolation unit during the partial vacuum impingement (27) by the isolation unit (12).
摘要翻译：用于将具有多个焊料沉积物的焊料沉积物配置转移到衬底（36）的接触表面的端子表面构造上的方法和装置，其使用从容纳在焊料沉积容器单元中的焊料沉积物储存器（25）去除多个焊料沉积物（11），其被实现为模板并且位于焊料沉积物储存器上方，以实现对应于端子表面构造实施的焊料沉积配置，并且使用随后的焊料沉积配置的转移在衬底的端子表面结构上，焊料沉积储存器通过隔离单元的模板开口（15）通过部分真空冲击，以将焊料沉积物从焊料沉积储存器转移到隔离单元中，焊料沉积储存器（25）通过位于与隔离单元直径相对的地板壁（20）通风通过隔离单元（12）引起部分真空冲击（27）。

15. 发明申请

US20080260370A1 Optical System 审中-公开
标题翻译：光学系统
公开(公告)号：US20080260370A1
公开(公告)日：2008-10-23
申请号：US10583864
申请日：2004-12-22
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： G03B15/03
CPC分类号： G02B27/143 , G02B27/144
摘要： Optical system (40) for observing multiple objects (61, 63) positioned distal from one another, having a camera unit (42) comprising a first prism unit (43) positioned on the optical axis (41) and/or in the beam path (47) of the camera unit for producing two partial beam paths (48, 49) as well as two object prism units (51, 52), each of which is situated in a partial beam path and assigned to an object.
摘要翻译：用于观察彼此远离定位的多个物体（61,63）的光学系统（40），具有相机单元（42），该照相机单元包括位于光轴（41）和/或光束路径中的第一棱镜单元（43）用于产生两个部分光束路径（48,49）的相机单元（47）以及两个物镜棱镜单元（51,52），每个物镜棱镜单元位于部分光束路径中并被分配给物体。

16. 发明授权

US08361881B2 Method for alternately contacting two wafers 有权
标题翻译：交替接触两个晶片的方法
公开(公告)号：US08361881B2
公开(公告)日：2013-01-29
申请号：US13075046
申请日：2011-03-29
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： H01L21/30
CPC分类号： H01L23/10 , H01L21/50 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/16
摘要： A method and device for alternatively contacting two wafer-like component composite arrangements, in which two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metallizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement, so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.
摘要翻译：用于交替地接触两个晶片状部件复合布置的方法和装置，其中在其相对的接触表面上设置有接触金属化的两个部件复合布置被带入其接触金属化的覆盖位置以形成接触对，在该位置处要接合在一起的接触金属化被彼此压靠，接触金属化通过将组分复合装置中的一个的后部暴露于激光辐射而接触，激光辐射的波长被选择为吸收程度的函数组件复合布置，使得激光辐射通过暴露于后面的激光辐射的组件复合装置的传输基本上被抑制，或者激光辐射的吸收基本上在一个或两个组件复合装置的接触金属化中发生。

17. 发明申请

US20120126410A1 Contact Array for Substrate Contacting 审中-公开
标题翻译：接触阵列用于基板接触
公开(公告)号：US20120126410A1
公开(公告)日：2012-05-24
申请号：US13263125
申请日：2009-11-05
申请人： Elke Zakel , Thorsten Teulsch , Ghassem Azdasht
发明人： Elke Zakel , Thorsten Teulsch , Ghassem Azdasht
IPC分类号： H01L23/485
CPC分类号： H01L24/11 , H01L23/293 , H01L23/3114 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0231 , H01L2224/02331 , H01L2224/0239 , H01L2224/03464 , H01L2224/0401 , H01L2224/05007 , H01L2224/05026 , H01L2224/05027 , H01L2224/05155 , H01L2224/05562 , H01L2224/05571 , H01L2224/0558 , H01L2224/05644 , H01L2224/05664 , H01L2224/0612 , H01L2224/13023 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/014 , H01L2924/01028 , H01L2224/13099 , H01L2224/05552
摘要： The present invention relates to a contact arrangement (47, 48, 49, 50, 55, 56, 57) for substrate contacting, in particular for contacting terminal faces of a semiconductor substrate (21), comprising at least one inner contact (25) of the contact arrangement that is formed on a substrate surface by a base terminal face of the substrate, a passivation layer (34, 35) covering at least the outer edge region and the periphery of the inner contact, at least one lower contact strip (36) extending laterally away from the inner contact (25) on the passivation layer (34, 35), and a further, upper contact strip (37, 38, 39) extending on the lower contact strip, wherein the further contact strip is formed by a contact metallization, which is substantially composed of a nickel (Ni) layer or a layer structure (38, 39) containing nickel and palladium (Pd).
摘要翻译：本发明涉及用于衬底接触的接触装置（47,48,49,50,55,56,57），特别是用于接触半导体衬底（21）的端面，其包括至少一个内部接触件（25）通过衬底的基底端面形成在衬底表面上的接触布置;至少覆盖所述内接触件的外边缘区域和周边的钝化层（34,35），至少一个下接触片 36），其在所述钝化层（34,35）上从所述内触头（25）横向延伸，以及在所述下接触条上延伸的另一上接触条（37,38,39），其中形成所述另一接触条通过接触金属化，其基本上由镍（Ni）层或含有镍和钯（Pd）的层结构（38,39）组成。

18. 发明申请

US20110244651A1 METHOD AND DEVICE FOR ALTERNATELY CONTACTING TWO WAFERS 有权
标题翻译：用于异步接触两个波形的方法和装置
公开(公告)号：US20110244651A1
公开(公告)日：2011-10-06
申请号：US13075046
申请日：2011-03-29
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： H01L21/60
CPC分类号： H01L23/10 , H01L21/50 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05009 , H01L2224/16
摘要： A method and device for alternatively contacting two wafer-like component composite arrangements, in which two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metalllizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement, so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements.
摘要翻译：用于交替地接触两个晶片状部件复合布置的方法和装置，其中在其相对的接触表面上设置有接触金属化的两个部件复合布置被带入其接触金属化的覆盖位置以形成接触对，在该位置处要接合在一起的接触金属化被彼此压靠，接触金属化通过将组件复合装置中的一个的后部暴露于激光辐射而接触，激光辐射的波长被选择为吸收度的函数组件复合布置，使得激光辐射通过暴露于后面的激光辐射的组件复合装置的传输基本上被抑制，或者激光辐射的吸收基本上在一个或两个组件复合装置的接触金属化中发生。

19. 发明申请

US20100051673A1 METHOD AND DEVICE FOR TRANSFERRING A SOLDER DEPOSIT CONFIGURATION 有权
标题翻译：用于传送焊接沉积物配置的方法和装置
公开(公告)号：US20100051673A1
公开(公告)日：2010-03-04
申请号：US12566098
申请日：2009-09-24
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： B23K1/20
CPC分类号： B23K3/0623 , H05K3/3478 , H05K2201/10734 , H05K2203/0338 , H05K2203/041 , H05K2203/082
摘要： Method and device for transferring a solder deposit configuration having multiple solder deposits onto a terminal surface configuration of a contact surface of a substrate (36) using a removal of multiple solder deposits from a solder deposit reservoir (25) accommodated in a solder deposit receptacle unit (11) via an isolation unit (12), which is implemented like a template and is situated above the solder deposit reservoir, to implement the solder deposit configuration implemented corresponding to the terminal surface configuration, and using a subsequent transfer of the solder deposit configuration onto the terminal surface configuration of the substrate, the solder deposit reservoir being impinged by partial vacuum through template openings (15) of the isolation unit to transfer the solder deposits from the solder deposit reservoir into the isolation unit, the solder deposit reservoir (25) being ventilated via a floor wall (20) situated diametrically opposite the isolation unit during the partial vacuum impingement (27) by the isolation unit (12).
摘要翻译：用于将具有多个焊料沉积物的焊料沉积物配置转移到衬底（36）的接触表面的端子表面构造上的方法和装置，其使用从容纳在焊料沉积容器单元中的焊料沉积物储存器（25）去除多个焊料沉积物（11），其被实现为模板并且位于焊料沉积物储存器上方，以实现对应于端子表面构造实施的焊料沉积配置，并且使用随后的焊料沉积配置的转移在衬底的端子表面结构上，焊料沉积储存器通过隔离单元的模板开口（15）通过部分真空冲击，以将焊料沉积物从焊料沉积储存器转移到隔离单元中，焊料沉积储存器（25）通过位于与隔离单元直径相对的地板壁（20）通风通过隔离单元（12）引起部分真空冲击（27）。

20. 发明申请

US20080171404A1 Method and Device For Mutual Contacting of Two Wafers 有权
标题翻译：两个晶片相互接触的方法和装置
公开(公告)号：US20080171404A1
公开(公告)日：2008-07-17
申请号：US11572105
申请日：2005-07-11
申请人： Elke Zakel , Ghassem Azdasht
发明人： Elke Zakel , Ghassem Azdasht
IPC分类号： H01L21/02 , B32B43/00
CPC分类号： H01L24/26 , H01L24/80 , H01L24/83 , H01L25/50 , H01L2224/83224 , H01L2224/83801 , H01L2924/01015 , H01L2924/01033 , H01L2924/01057 , H01L2924/19043
摘要： A method and a device for the mutual contacting of two wafer-type component composite configurations made of multiple identical components which are implemented coherently, in particular a semiconductor wafer (12) with a functional component wafer (14), to produce electronic assemblies on the wafer level, in which the component composite configurations are each situated on a receptacle unit (11; 13) and the contact pressure necessary for the contacting between contact metallizations of the component composite configurations to be connected to one another is generated in such a way that a vacuum is generated in a contact chamber which receives the component composite configurations and is delimited by the receptacle units, and the contacting of the contact metallizations is performed by a rear energy impingement of a component composite configuration.
摘要翻译：一种用于相互接触的两个晶片型部件复合结构相互接触的方法和装置，所述两个晶片型部件复合结构由相干地实现的多个相同部件，特别是具有功能部件晶片（14）的半导体晶片（12）制成，以在其上产生电子组件晶片级，其中部件复合结构各自位于插座单元（11; 13）上，并且以相互连接的部件复合结构的接触金属化之间的接触所需的接触压力被产生，使得在接收室中产生真空，该接触室接收组件复合结构，并由容器单元限定，并且接触金属化的接触通过组件复合构造的后能量冲击来执行。

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