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11. 发明授权

US4469562A Carbon dioxide sensor 失效
标题翻译：二氧化碳传感器
公开(公告)号：US4469562A
公开(公告)日：1984-09-04
申请号：US454421
申请日：1982-12-29
申请人： Kuo-Wei Chang
发明人： Kuo-Wei Chang
IPC分类号： G01N27/28 , G01N27/40 , G01N27/49 , G01N27/46
CPC分类号： G01N27/4045
摘要： An electrolyte anion exchange sensor having a first diffusion membrane is spaced apart from an anion exchange membrane to form a cathodic cell. A second diffusion membrane is spaced apart from the anion exchange to form an anodic cell. CO.sub.2 flows through the first membrane and is ionized. The bicarbonate ions flow through the anion exchange membrane into the anodic compartment and reacts to form CO.sub.2. The current change in the electrolyte path corresponds to the amount of CO.sub.2.
摘要翻译：具有第一扩散膜的电解质阴离子交换传感器与阴离子交换膜间隔开以形成阴极电池。第二扩散膜与阴离子交换器间隔开以形成阳极电池。 CO 2流过第一膜并被电离。碳酸氢根离子流过阴离子交换膜进入阳极室并反应形成二氧化碳。电解质通路中的电流变化对应于二氧化碳的量。

12. 发明授权

US08148707B2 Ovonic threshold switch film composition for TSLAGS material 有权
标题翻译：用于TSLAGS材料的Ovonic阈值开关膜组成
公开(公告)号：US08148707B2
公开(公告)日：2012-04-03
申请号：US12637644
申请日：2009-12-14
申请人： Stanford Ovshinsky , Tyler Lowrey , James D. Reed , Semyon D. Savransky , Jason S. Reid , Kuo-Wei Chang
发明人： Stanford Ovshinsky , Tyler Lowrey , James D. Reed , Semyon D. Savransky , Jason S. Reid , Kuo-Wei Chang
IPC分类号： H01L29/02 , H01L29/18 , H01L45/00
CPC分类号： H01L45/141 , C01B19/002 , C01P2006/40 , H01L27/2427 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1641
摘要： A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
摘要翻译：优化超声波阈值开关的操作参数的硫族化合物包括在9至39范围内的砷的原子百分比，10和40范围内的锗的原子百分比，5的原子百分比在5的范围内， 18，氮的原子百分比在0和10的范围内，以及硫，硒和碲的合金。硫与硒的比例在0.25和4的范围内，硫，硒和碲合金中硫与碲的比例在0.11和1的范围内。

13. 发明授权

US06885021B2 Adhesion layer for a polymer memory device and method therefor 失效
标题翻译：一种用于聚合物记忆装置的粘合层及其方法
公开(公告)号：US06885021B2
公开(公告)日：2005-04-26
申请号：US10036833
申请日：2001-12-31
申请人： Mac Apodaca , Jon-Won S. Lee , Kuo-Wei Chang
发明人： Mac Apodaca , Jon-Won S. Lee , Kuo-Wei Chang
IPC分类号： H01L45/00 , H01L47/00 , H01L21/00 , H01L21/20
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608
摘要： Briefly, in accordance with one embodiment of the invention, a device, such as a memory cell, includes a dielectric layer and a layer of phase-change material with an adhesion layer between the dielectric layer and the layer of phase-change material.
摘要翻译：简而言之，根据本发明的一个实施例，诸如存储单元的装置包括电介质层和相变材料层，其中介电层和相变材料层之间具有粘附层。

14. 发明申请

US20150123066A1 ELECTRODE MATERIALS AND INTERFACE LAYERS TO MINIMIZE CHALCOGENIDE INTERFACE RESISTANCE 有权
标题翻译：电极材料和界面层，以最小化氯化铝界面电阻
公开(公告)号：US20150123066A1
公开(公告)日：2015-05-07
申请号：US14073927
申请日：2013-11-07
申请人： F. Daniel Gealy , Andrea Gotti , Davide Colombo , Kuo-Wei Chang
发明人： F. Daniel Gealy , Andrea Gotti , Davide Colombo , Kuo-Wei Chang
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/1608 , H01L27/2427 , H01L27/2463 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16
摘要： A phase-change memory cell having a reduced electrode-chalcogenide interface resistance and a method for making the phase-change memory cell are disclosed: An interface layer is formed between an electrode layer and a chalcogenide layer that and provides a reduced resistance between the chalcogenide-based phase-change memory layer and the electrode layer. Exemplary embodiments provide that the interface layer comprises a tungsten carbide, a molybdenum carbide, a tungsten boride, or a molybdenum boride, or a combination thereof. In one exemplary embodiment, the interface layer comprises a thickness of between about 1 nm and about 10 nm.
摘要翻译：公开了具有降低的电极 - 硫族化物界面电阻的相变存储单元和制造相变存储单元的方法：在电极层和硫族化物层之间形成界面层，并在硫族化物之间提供降低的电阻的相变存储层和电极层。示例性实施例提供界面层包括碳化钨，碳化钼，硼化钨或硼化钼，或其组合。在一个示例性实施例中，界面层包括约1nm至约10nm的厚度。

15. 发明申请

US20140003123A1 LOW POWER PHASE CHANGE MEMORY CELL 有权
标题翻译：低功率相变存储器单元
公开(公告)号：US20140003123A1
公开(公告)日：2014-01-02
申请号：US13534267
申请日：2012-06-27
申请人： Elijah V. Karpov , Kuo-Wei Chang , Gianpaolo Spadini
发明人： Elijah V. Karpov , Kuo-Wei Chang , Gianpaolo Spadini
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , H01L27/2409 , H01L27/2427 , H01L45/06 , H01L45/1233
摘要： A memory may include two electrodes and phase change material having an amorphous reset state and a partially crystalized set state, coupled between the two electrodes. The phase change material in the set state may have a highly nonlinear current-voltage response in a subthreshold voltage region. The phase change material may be an alloy of indium, antimony, and tellurium.
摘要翻译：存储器可以包括耦合在两个电极之间的具有非晶复位状态和部分结晶化设置状态的两个电极和相变材料。设定状态下的相变材料在亚阈值电压区域中可能具有高度非线性的电流 - 电压响应。相变材料可以是铟，锑和碲的合金。

16. 发明授权

US06826434B1 Computerized numerical control for a servomechanism 失效
标题翻译：伺服机构的计算机数字控制
公开(公告)号：US06826434B1
公开(公告)日：2004-11-30
申请号：US09344433
申请日：1999-06-25
申请人： Kuo-Wei Chang
发明人： Kuo-Wei Chang
IPC分类号： G05B1942
CPC分类号： G05B19/4145 , G05B2219/33189 , G05B2219/34024 , G05B2219/34279 , G05B2219/42237
摘要： A computerized numerical control system is provided for controlling a servomechanism under the direction of a general-purpose computer system. The system implements in software a PID controller for determining appropriate inputs to the servomechanism. The system further includes a Field Programmable Gate Array which is loadable with custom logic for remotely interfacing to the servomechanism.
摘要翻译：提供一种计算机化数字控制系统，用于控制通用计算机系统方向下的伺服机构。该系统在软件中实现PID控制器，用于确定对伺服机构的适当输入。该系统还包括现场可编程门阵列，该阵列可通过用于与伺服机构远程连接的定制逻辑进行加载。

17. 发明授权

US06553253B1 Method and system for electrokinetic delivery of a substance 失效
标题翻译：物质电动输送的方法和系统
公开(公告)号：US06553253B1
公开(公告)日：2003-04-22
申请号：US09523217
申请日：2000-03-10
申请人： Kuo-Wei Chang
发明人： Kuo-Wei Chang
IPC分类号： A61N130
CPC分类号： A61N1/044 , A61N1/325
摘要： An electrokinetic system for delivering a substance into tissue includes an alternating current source of a predetermined frequency. A first electrode is coupled to a first terminal of the alternating current source and a second electrode is coupled to a second terminal of the alternating current source. A rectifying circuit is coupled between the first electrode and the first terminal of the alternating current source. One of the first and second electrodes is adapted for electrical contact with a substance-delivery site. A current rectified by the rectifying circuit flows in a current path between the first and second electrodes when the one of the first and second electrodes is in electrical contact with the substance-delivery site to effect delivery of the substance into the tissue.
摘要翻译：用于将物质输送到组织中的电动系统包括预定频率的交流电源。第一电极耦合到交流电源的第一端子，第二电极耦合到交流电源的第二端子。整流电路耦合在第一电极和交流电源的第一端之间。第一和第二电极之一适于与物质递送部位电接触。当第一和第二电极中的一个与物质递送部位电接触时，由整流电路整流的电流在第一和第二电极之间的电流通路中流动，以将物质输送到组织中。

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