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    • 11. 发明授权
    • Integrated pyroelectric sensor and method
    • 综合热电传感器及方法
    • US4608865A
    • 1986-09-02
    • US678871
    • 1984-12-05
    • Richard S. MullerDennis L. Polla
    • Richard S. MullerDennis L. Polla
    • G01F1/688G01J5/34G01P5/10H01L27/16H01L29/51H01L29/66H01L37/02G01F1/68
    • H01L29/66992G01F1/6886G01J5/34G01P5/10H01L27/16H01L29/51H01L37/02
    • An integrated circuit pyroelectric sensor includes two MOSFETS coupled in a differential amplifier configuration, each MOSFET having a common source. A pyroelectric capacitor is coupled to the gate of a respective one of the MOSFET. A polysilicon filament is disposed between the pyroelectric capacitors which acts as a heating element when a current is passed therethrough. The voltage difference between the drain of each MOSFET is thus a function of the voltage difference between the pyroelectric capacitors. One of the pyroelectric capacitors is disposed at the leading edge of the sensor with respect to the direction of a fluid flow. The fluid flow across the sensor will cause the first capacitor to have a different temperature than the other capacitor of the trailing edge of the sensor whose temperature is a function of the temperature of the heating element. As the temperature of each pyroelectric capacitor changes, the amount of charge stored by each pyroelectric capacitor changes, thereby developing a differential voltage across the gates, and hence, the drains, of the integrated MOSFETS. Since the charge stored and voltage across each pyroelectric capacitor is a function of temperature, the differential voltage between the drains of each MOSFET is a function of temperature.
    • 集成电路热电传感器包括以差分放大器配置耦合的两个MOSFET,每个MOSFET具有公共源。 热电电容器耦合到MOSFET的相应一个的栅极。 在电流通过其中充当加热元件的热​​电电容器之间设置多晶硅细丝。 因此,每个MOSFET的漏极之间的电压差是热电电容器之间的电压差的函数。 热电电容器之一相对于流体流动的方向设置在传感器的前缘。 传感器上的流体流动将导致第一电容器具有与传感器后缘的另一电容器不同的温度,其温度是加热元件温度的函数。 随着每个热电电容器的温度变化,每个热电电容器存储的电荷量发生变化,从而产生跨越栅极的差分电压,并因此产生集成MOSFET的漏极。 由于存储的电荷和每个热电电容器上的电压是温度的函数,所以每个MOSFET的漏极之间的差分电压是温度的函数。
    • 17. 发明授权
    • PZT microdevice
    • PZT微型设备
    • US5914507A
    • 1999-06-22
    • US739808
    • 1996-10-30
    • Dennis L. PollaJoon Han Kim
    • Dennis L. PollaJoon Han Kim
    • H01L41/09H01L29/82
    • H01L41/094H01L41/0973Y10S73/01Y10S73/04
    • A micromechanical device or microactuator based upon the piezoelectric, pyroelectric, and electrostrictive properties of ferroelectric thin film ceramic materials such as PZT. The microdevice has a device substrate and a deflectable component. The deflectable component is mounted for deflection on the device substrate and has a sensor/actuator. The sensor/actuator has first and second electrodes and a piezoelectric thin film disposed between the first and second electrodes. The thin film is preferably PZT. The sensor/actuator is disposed on a sensor/actuator substrate. The sensor/actuator substrate is formed of a material selected for being resistive to attack by hydrofluoric acid vapor. The invention also relates to a method for fabricating such micromechanical devices or microactuators.
    • 基于铁电薄膜陶瓷材料如PZT的压电,热释电和电致伸缩特性的微机械装置或微型致动器。 微型装置具有装置基板和可偏转部件。 可偏转部件被安装用于偏转在装置基板上并且具有传感器/致动器。 传感器/致动器具有设置在第一和第二电极之间的第一和第二电极和压电薄膜。 该薄膜优选为PZT。 传感器/致动器设置在传感器/致动器基板上。 传感器/致动器基板由选择用于耐受氢氟酸蒸气侵蚀的材料形成。 本发明还涉及一种用于制造这种微机械装置或微型致动器的方法。
    • 19. 发明授权
    • Microdevice with ferroelectric for sensing or applying a force
    • 具有铁电的微型设备用于感测或施加力
    • US5536963A
    • 1996-07-16
    • US241052
    • 1994-05-11
    • Dennis L. Polla
    • Dennis L. Polla
    • H01L37/02H01L41/09H01L29/82
    • H01L37/02H01L41/094
    • A micromechanical structure or microactuator based upon the piezoelectric, pyroelectric, and electrostrictive properties of ferroelectric thin film ceramic materials such as PZT with a thickness between 0.1 and 10 micrometers. The thin film ceramic material is sandwiched between first and second electrodes and may contain an intermediate electrically insulating thin film. This structure with electrodes is formed on a deformable or movable structure integral to a semiconductor or bulk ceramic substrate. Electrical connection is established between the upper and lower electrodes. A potential difference or voltage is established between the electrical interconnection points to produce a force, movement, or mechanical deformation. The invention also relates to a method for making such micromechanical structures or microactuators.
    • 基于厚度在0.1和10微米之间的铁电薄膜陶瓷材料(例如PZT)的压电,热释电和电致伸缩特性的微机械结构或微致动器。 薄膜陶瓷材料夹在第一和第二电极之间,并且可以包含中间电绝缘薄膜。 这种具有电极的结构形成在与半导体或体积陶瓷衬底一体的可变形或可移动结构上。 在上下电极之间建立电连接。 在电互连点之间建立电位差或电压以产生力,运动或机械变形。 本发明还涉及制造这种微机械结构或微型致动器的方法。