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11. 发明授权

US4021701A Transistor protection circuit 失效
标题翻译：晶体管保护电路
公开(公告)号：US4021701A
公开(公告)日：1977-05-03
申请号：US638879
申请日：1975-12-08
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： G05F1/573 , H03F1/52 , H02H7/20
CPC分类号： H03F1/52 , G05F1/573
摘要： The disclosed protection circuit which is suitable for providing protection of transistors included in integrated circuits such as regulators and power amplifiers, includes thermal shutdown, safe area and current control circuits. The current control portion includes a sense transistor connected substantially in parallel with the transistor to be protected. In monolithic integrated circuit applications, the sense transistor has an emitter area that is a predetermined ratio of the emitter area of the protected transistor. A "sense resistor" is connected to the sense transistor and develops a control signal which is proportional to the instantaneous current being conducted by the protected transistor. A threshold circuit is coupled between the sense resistor and the drive circuit for the protected transistor and responds to the magnitude of the control signal crossing a predetermined threshold to remove or reduce the drive to the protected transistor.
摘要翻译：所公开的适用于提供包括在诸如调节器和功率放大器的集成电路中的晶体管的保护的保护电路包括热关断，安全区域和电流控制电路。电流控制部分包括基本上与要保护的晶体管并联连接的检测晶体管。在单片集成电路应用中，感测晶体管具有作为受保护晶体管的发射极面积的预定比率的发射极区域。 “感测电阻器”连接到感测晶体管，并产生与受保护晶体管传导的瞬时电流成正比的控制信号。阈值电路耦合在感测电阻器和用于受保护晶体管的驱动电路之间，并且响应于超过预定阈值的控制信号的大小以去除或减小对受保护晶体管的驱动。

12. 再颁专利

USRE45185E1 Rifle handguard system with integrated barrel nut 有权
标题翻译：具有集成桶形螺母的步枪护手系统
公开(公告)号：USRE45185E1
公开(公告)日：2014-10-14
申请号：US11361036
申请日：2006-02-23
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： F41A21/00
CPC分类号： F41G11/003 , F41A21/482 , F41C23/16
摘要： A handguard system for use on a rifle having a barrel and a receiver, the hand guard system includes a barrel nut having an inner surface with a threaded portion adapted to threadably engage the receiver for securing the barrel to the receiver and an outer surface, and a tubular handguard having an end. The tubular handguard is receivable about the barrel and is received about the barrel nut, engaging the outer surface thereof.REEXAMINATION RESULTSThe questions raised in reexamination proceeding No. 90/008,357, filed Dec. 1, 2006, have been considered, and the results thereof are reflected in this reissue patent which constitutes the reexamination certificate required by 35 U.S.C. 307 as provided in 37 CFR 1.570(e) for ex parte reexaminations, or the reexamination certificate required by 35 U.S.C. 316 as provided in 37 CFR 1.997(e) for inter partes reexaminations.
摘要翻译：一种用于具有镜筒和接收器的步枪的护手系统，所述护手系统包括镜筒螺母，所述枪管螺母具有内表面，所述内表面具有螺纹部分，所述螺纹部分适于螺纹接合所述接收器以将所述镜筒固定到所述接收器和外表面，以及具有末端的管状护手。管状护手可以围绕桶接收并且被容纳在与其外表面接合的桶形螺母周围。重审结果2006年12月1日提交的第90 / 008,357号复审程序中提出的问题已被考虑，其结果反映在该重新颁发专利中，构成35U.S.C.所要求的复审证书。根据第37 CFR 1.570（e）的规定，单方面复审，或35 U.S.C.所要求的复审证书。按照第37 CFR 1.997（e）条的规定进行跨部门重新审查。

13. 发明授权

US08297175B1 Rifle handguard 有权
标题翻译：步枪护手
公开(公告)号：US08297175B1
公开(公告)日：2012-10-30
申请号：US13223263
申请日：2011-08-31
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： F41A5/00
CPC分类号： F41C23/16 , F41A3/94 , F41A5/18 , F41A5/28 , F41A29/02 , F41C23/04 , F41C23/06
摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
摘要翻译：具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。

14. 发明授权

US08008720B2 Transistor structure having a conductive layer formed contiguous in a single deposition 有权
标题翻译：晶体管结构具有在单次沉积中形成邻接的导电层
公开(公告)号：US08008720B2
公开(公告)日：2011-08-30
申请号：US12248809
申请日：2008-10-09
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L29/94 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0653 , H01L29/0661 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7811
摘要： A semiconductor device is formed having a pedestal. The pedestal includes at least two dielectric layers. The pedestal has a sidewall and a major surface. A conductive layer is formed overlying the pedestal. A vertical portion of the conductive layer adjacent to the sidewall of the pedestal is a gate of the transistor. The portion of the conductive layer overlying the major surface can be used as interconnect. The gate and gate interconnect are contiguous and formed in a single process. A conductive shield layer may be integrated into the pedestal. The conductive shield layer functions as a faraday shield that reduces gate to drain capacitance of the device.
摘要翻译：形成具有基座的半导体器件。基座包括至少两个电介质层。基座具有侧壁和主表面。形成在基座上方的导电层。与基座的侧壁相邻的导电层的垂直部分是晶体管的栅极。覆盖主表面的导电层的部分可以用作互连。栅极和栅极互连是连续的并且在单个过程中形成。导电屏蔽层可以集成到基座中。导电屏蔽层用作减小器件的栅极到漏极电容的法拉第屏蔽。

15. 发明申请

US20110045664A1 TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN 有权
标题翻译：具有TRENCH DRAIN的晶体管结构
公开(公告)号：US20110045664A1
公开(公告)日：2011-02-24
申请号：US12917163
申请日：2010-11-01
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L21/265
CPC分类号： H01L29/0882 , H01L21/26586 , H01L29/0653 , H01L29/0661 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7802 , H01L29/7811
摘要： A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
摘要翻译：半导体器件形成为具有与器件的载流区相邻的沟槽。形成沟槽的深度大于装置的桶区域的深度。增加沟槽深度将较高场强的区域从桶区移动到沿着沟槽的区域。沿着沟槽的区域不具有接合点并且可以承受更高的场强。

16. 发明授权

US07847369B2 Radio frequency power semiconductor device comprising matrix of cavities as dielectric isolation structure 有权
标题翻译：射频功率半导体器件包括空腔矩阵作为介质隔离结构
公开(公告)号：US07847369B2
公开(公告)日：2010-12-07
申请号：US12580390
申请日：2009-10-16
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L29/06
CPC分类号： H01L27/0296 , H01L21/2815 , H01L21/32055 , H01L21/56 , H01L21/76224 , H01L21/768 , H01L21/76838 , H01L21/823412 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L21/823487 , H01L23/047 , H01L23/051 , H01L23/10 , H01L23/36 , H01L23/3675 , H01L23/4824 , H01L23/49844 , H01L23/552 , H01L23/66 , H01L24/06 , H01L24/83 , H01L25/50 , H01L29/0657 , H01L29/0661 , H01L29/0696 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/42376 , H01L29/4238 , H01L29/66681 , H01L29/66712 , H01L29/66719 , H01L29/66727 , H01L29/7811 , H01L29/7817 , H01L2223/6644 , H01L2224/0401 , H01L2224/04042 , H01L2224/06136 , H01L2224/48091 , H01L2224/83193 , H01L2224/83801 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/0106 , H01L2924/01061 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/16152 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014
摘要： A power transistor includes a plurality of transistor cells. Each transistor cell has a first electrode coupled to a first electrode interconnection region overlying a first major surface, a control electrode coupled to a control electrode interconnection region overlying the first major surface, and a second electrode coupled to a second electrode interconnection region overlying a second major surface. Each transistor cell has an approximately constant doping concentration in the channel region. A dielectric platform is used as an edge termination of an epitaxial layer to maintain substantially planar equipotential lines therein. The power transistor finds particular utility in radio frequency applications operating at a frequency greater than 500 megahertz and dissipating more than 5 watts of power. The semiconductor die and package are designed so that the power transistor can efficiently operate under such severe conditions.
摘要翻译：功率晶体管包括多个晶体管单元。每个晶体管单元具有耦合到覆盖第一主表面的第一电极互连区域的第一电极，耦合到覆盖第一主表面的控制电极互连区域的控制电极，以及耦合到覆盖第二主表面的第二电极互连区域的第二电极主要表面。每个晶体管单元在沟道区中具有近似恒定的掺杂浓度。电介质平台用作外延层的边缘终端以在其中保持基本上平面的等电位线。功率晶体管在以超过500兆赫的频率工作的射频应用中具有特别的用途，并耗散5瓦以上的功率。半导体管芯和封装被设计成使得功率晶体管能够在如此恶劣的条件下有效地工作。

17. 发明授权

US07847350B2 Transistor structure having a trench drain 有权
标题翻译：具有沟槽漏极的晶体管结构
公开(公告)号：US07847350B2
公开(公告)日：2010-12-07
申请号：US12248803
申请日：2008-10-09
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L29/94
CPC分类号： H01L29/0882 , H01L21/26586 , H01L29/0653 , H01L29/0661 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7802 , H01L29/7811
摘要： A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
摘要翻译：半导体器件形成为具有与器件的载流区相邻的沟槽。形成沟槽的深度大于装置的桶区域的深度。增加沟槽深度将较高场强的区域从桶区移动到沿着沟槽的区域。沿着沟槽的区域不具有接合点并且可以承受更高的场强。

18. 发明申请

US20100090275A1 TRANSISTOR STRUCTURE HAVING AN ACTIVE REGION AND A DIELECTRIC PLATFORM REGION 有权
标题翻译：具有活性区域和介质平台区域的晶体管结构
公开(公告)号：US20100090275A1
公开(公告)日：2010-04-15
申请号：US12248820
申请日：2008-10-09
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0653 , H01L29/0661 , H01L29/0696 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/66727
摘要： A semiconductor device is formed having lower gate-to-drain capacitance. The semiconductor device having an active region (1300) and a dielectric platform region (1310). A trench (80) is formed adjacent to a drain (20) of the semiconductor device to a first depth. The etch process for forming trench (80) etches the dielectric platform region (1310) to a first depth. A second trench (210) is etched in trench (80) to further isolate areas in the active region (1300). The etch process for forming the second trench (210) etches the dielectric platform region (1310) to form a support structure for the dielectric platform in the substrate. The dielectric platform, the trench (80), and the second trench (210) is capped and sealed. The dielectric platform is made approximately planar to the major surface of the substrate by forming the support structure from the first depth to the second depth.
摘要翻译：形成具有较低栅 - 漏电容的半导体器件。具有有源区（1300）和电介质平台区（1310）的半导体器件。与半导体器件的漏极（20）相邻形成第一深度的沟槽（80）。用于形成沟槽（80）的蚀刻工艺将电介质平台区域（1310）蚀刻到第一深度。在沟槽（80）中蚀刻第二沟槽（210）以进一步隔离有源区域（1300）中的区域。用于形成第二沟槽（210）的蚀刻工艺蚀刻介电平台区域（1310）以形成用于衬底中的电介质平台的支撑结构。绝缘平台，沟槽（80）和第二沟槽（210）被封盖并密封。通过从第一深度到第二深度形成支撑结构，使电介质平台与基板的主表面大致平面。

19. 发明申请

US20100090273A1 TRANSISTOR STRUCTURE HAVING DUAL SHIELD LAYERS 有权
标题翻译：具有双层屏蔽层的晶体管结构
公开(公告)号：US20100090273A1
公开(公告)日：2010-04-15
申请号：US12248811
申请日：2008-10-09
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/7802 , H01L21/26586 , H01L21/2815 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42376 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/7811
摘要： A semiconductor device is formed having lower gate to drain capacitance. A trench (80) is formed adjacent to a drain (20) of the semiconductor device. Trench (80) has a sidewall surface (100) and a surface (90). A doped region (110) is implanted through the sidewall surface (100) of trench (80). A dielectric layer (150) overlies the sidewall surface (100) of trench (80). A shield layer (170) overlies the dielectric layer (150). The shield layer (170) is between a portion of drain (20) and a portion of the gate and gate interconnect of the semiconductor device thereby reducing gate to drain capacitance. The shield layer (170) overlies a minority portion of the surface (90) of trench (80). A second shield layer (270) further reduces gate to drain capacitance.
摘要翻译：形成具有较低栅极至漏极电容的半导体器件。邻近半导体器件的漏极（20）形成沟槽（80）。沟槽（80）具有侧壁表面（100）和表面（90）。通过沟槽（80）的侧壁表面（100）注入掺杂区域（110）。电介质层（150）覆盖在沟槽（80）的侧壁表面（100）上。屏蔽层（170）覆盖在电介质层（150）上。屏蔽层（170）位于漏极（20）的一部分和半导体器件的栅极和栅极互连的一部分之间，从而减小栅极至漏极电容。屏蔽层（170）覆盖沟槽（80）的表面（90）的少数部分。第二屏蔽层（270）进一步减小栅极至漏极电容。

20. 发明申请

US20100090269A1 TRANSISTOR STRUCTURE HAVING A TRENCH DRAIN 有权
标题翻译：具有TRENCH DRAIN的晶体管结构
公开(公告)号：US20100090269A1
公开(公告)日：2010-04-15
申请号：US12248803
申请日：2008-10-09
申请人： Robert Bruce Davies
发明人： Robert Bruce Davies
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0882 , H01L21/26586 , H01L29/0653 , H01L29/0661 , H01L29/0878 , H01L29/402 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7802 , H01L29/7811
摘要： A semiconductor device is formed having a trench adjacent to a current carrying region of the device. The trench is formed having a depth greater than the depth of a tub region of the device. Increasing the trench depth moves a region of higher field strength from the tub region to a region along the trench. The region along the trench does not have a junction and may withstand the higher field strength.
摘要翻译：半导体器件形成为具有与器件的载流区相邻的沟槽。形成沟槽的深度大于装置的桶区域的深度。增加沟槽深度将较高场强的区域从桶区移动到沿着沟槽的区域。沿着沟槽的区域不具有接合点并且可以承受更高的场强。

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