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11. 发明申请

US20070141345A1 Transparent and electrically conductive single wall carbon nanotube films 有权
标题翻译：透明导电单壁碳纳米管薄膜
公开(公告)号：US20070141345A1
公开(公告)日：2007-06-21
申请号：US11583545
申请日：2006-10-19
申请人： Andrew Rinzler , Zhihong Chen
发明人： Andrew Rinzler , Zhihong Chen
IPC分类号： B32B9/00
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B32/174 , C01B2202/02 , D01F9/12 , H01L51/0048 , H01L51/0052 , H01L51/444 , Y10S977/742 , Y10T428/30
摘要： An optically transparent and electrically conductive single walled carbon nanotube (SWNT) film comprises a plurality of interpenetrated single walled carbon nanotubes, wherein for a 100 nm film the film has sufficient interpenetration to provide a 25° C. sheet resistance of less than 200 ohm/sq. The film also provides at least 20% optical transmission throughout a wavelength range from 0.4 μm to 5 μm.
摘要翻译：光学透明且导电的单壁碳纳米管（SWNT）膜包括多个互穿的单壁碳纳米管，其中对于100nm膜，膜具有足够的相互渗透，以提供小于200欧姆/ 平方该薄膜还在0.4μm至5μm的波长范围内提供至少20％的光学透射。

12. 发明申请

US20070065977A1 Low temperature methods for forming patterned electrically conductive thin films and patterned articles therefrom 有权
标题翻译：用于形成图案化导电薄膜和图案化制品的低温方法
公开(公告)号：US20070065977A1
公开(公告)日：2007-03-22
申请号：US11525067
申请日：2006-09-21
申请人： Andrew Rinzler , Zhuangchun Wu
发明人： Andrew Rinzler , Zhuangchun Wu
IPC分类号： H01L51/40
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0004 , H01L51/0005 , H01L51/0021 , Y10S438/962 , Y10S977/892 , Y10S977/893
摘要： A method of forming patterned thin films includes the steps of providing a porous membrane and a solution including a plurality of solid constituents and at least one surface stabilizing agent for preventing the solid constituents from flocculating out of suspension. The solution is dispensed onto a surface of the membrane. The solution is then removed by filtration through the membrane, wherein a patterned film coated membrane comprising a plurality of primarily spaced apart patterned regions are formed on the membrane. In one embodiment the method further includes the step of blocking liquid passage through selected portions of the membrane to form a plurality of open membrane portions and a plurality of blocked membrane portions before the dispensing step. The dispensing step includes ink jet printing the solution. An article having a patterned nanotube-including film thereon includes a substrate, and a patterned nanotube including film disposed on the substrate. The film includes a plurality of primarily spaced apart patterned regions, wherein nanotubes in the film are preferentially aligned parallel to a long direction of the patterned regions. The preferential alignment is generally most pronounced towards an edge of the patterned regions.
摘要翻译：形成图案化薄膜的方法包括提供多孔膜和包含多种固体成分的溶液和至少一种用于防止固体成分从悬浮液中絮凝的表面稳定剂的步骤。将溶液分配到膜的表面上。然后通过膜通过过滤除去溶液，其中在膜上形成包含多个主要间隔开的图案化区域的图案化膜包衣膜。在一个实施例中，该方法还包括阻止液体通过膜的选定部分的步骤，以在分配步骤之前形成多个开放的膜部分和多个封闭的膜部分。分配步骤包括喷墨印刷溶液。在其上具有图案化的纳米管的膜的物品包括基板和设置在基板上的包含膜的图案化纳米管。膜包括多个主要间隔开的图案化区域，其中膜中的纳米管优先与图案化区域的长方向平行。优先对准通常对于图案化区域的边缘最显着。

13. 发明申请

US20090302310A1 Short Channel Vertical FETs 有权
标题翻译：短通道垂直FET
公开(公告)号：US20090302310A1
公开(公告)日：2009-12-10
申请号：US12305409
申请日：2007-06-29
申请人： Andrew Rinzler , Zhuangchun Wu , Bo Liu
发明人： Andrew Rinzler , Zhuangchun Wu , Bo Liu
IPC分类号： H01L51/10
CPC分类号： H01L51/057 , B82Y10/00 , H01L51/0021 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0048 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0078 , H01L51/0081 , Y10S257/90 , Y10S257/902 , Y10S257/903
摘要： A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode.
摘要翻译：垂直场效应晶体管（FET）包括栅电极和第一电极层，第一电极层具有介于这些电极之间的电介质层和与第一电极电耦合的半导体有源层。有源层和电介质层夹着第一电极的至少一部分，其中有源层的至少一部分被第一电极屏蔽，使得非屏蔽部分与电介质层直接物理接触。第二电极层电耦合到有源层，其中第二电极设置在有源层的非屏蔽部分的至少一部分上，使得第二电极可以在栅极电极附近的非屏蔽区域中偏置时与栅电极形成静电场第一电极。

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