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12. 发明授权

US06759696B2 Bipolar transistor, semiconductor device and method of manufacturing same 有权
标题翻译：双极晶体管，半导体器件及其制造方法
公开(公告)号：US06759696B2
公开(公告)日：2004-07-06
申请号：US10210499
申请日：2002-08-01
申请人： Hendrik Gezienus Albert Huizing , Jan Willem Slotboom , Doede Terpstra , Johan Hendrik Klootwijk , Eyup Aksen
发明人： Hendrik Gezienus Albert Huizing , Jan Willem Slotboom , Doede Terpstra , Johan Hendrik Klootwijk , Eyup Aksen
IPC分类号： H01L31072
CPC分类号： H01L29/66242 , H01L29/0817 , H01L29/7378
摘要： The bipolar transistor comprises a collector region (1) of a semiconductor material having a first doping type, a base region (2) of a semiconductor material having a second doping type, and an emitter region (3) having the first doping type. A junction is present between the emitter region (3) and the base region (2), and, viewed from the junction (4), a depletion region (5) extends into the emitter region (3). The emitter region (3) comprises a layer (6) of a first semiconductor material and a layer (7) of a second semiconductor material. The first semiconductor material has a higher intrinsic carrier concentration than the second semiconductor material. The layer (7) of said second semiconductor material is positioned outside the depletion region (5). The second semiconductor material has such a doping concentration that Auger recombination occurs. The invention also relates to a semiconductor device comprising such a bipolar transistor. The method of manufacturing the bipolar transistor comprises the step of forming an emitter region (3) with a first doping type on a collector region (1) of a semiconductor material with a first doping type, and a base region (2) of a semiconductor material having a second doping type. The emitter region (3) is formed by epitaxially depositing a first layer (6) of a first semiconductor material and subsequently epitaxially depositing a second layer (7) of a second semiconductor material. The second layer (7) is doped with the first doping type, such that Auger recombination occurs. The intrinsic carrier concentration of the second semiconductor material is higher than the intrinsic carrier concentration of the first semiconductor material. The Auger recombination dominates the base current and allows accurate tuning of the base current and the current gain of the bipolar transistor.
摘要翻译：双极晶体管包括具有第一掺杂类型的半导体材料的集电极区域（1），具有第二掺杂类型的半导体材料的基极区域（2）和具有第一掺杂类型的发射极区域（3）。在发射极区域（3）和基极区域（2）之间存在结，并且从结（4）观察，耗尽区域（5）延伸到发射极区域（3）中。发射极区域（3）包括第一半导体材料的层（6）和第二半导体材料的层（7）。第一半导体材料具有比第二半导体材料更高的本征载流子浓度。所述第二半导体材料的层（7）位于耗尽区（5）的外部。第二半导体材料具有发生俄歇复合的掺杂浓度。本发明还涉及包括这种双极晶体管的半导体器件。制造双极晶体管的方法包括以下步骤：形成具有第一掺杂的发射极区（3）类型在具有第一掺杂类型的半导体材料的集电极区域（1）上，以及具有第二掺杂类型的半导体材料的基极区域（2）。发射极区（3）通过外延地沉积第一半导体材料的第一层（6）并随后外延地沉积第二半导体材料的第二层（7）而形成。第二层（7）掺杂有第一掺杂类型，使得发生俄歇复合。第二半导体材料的本征载流子浓度高于第一半导体材料的本征载流子浓度。俄歇复合支配基极电流，并允许精确调谐双极晶体管的基极电流和电流增益。

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