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11. 发明授权

US4356341A Cascade solar cell having conductive interconnects 失效
标题翻译：级联太阳能电池具有导电互连
公开(公告)号：US4356341A
公开(公告)日：1982-10-26
申请号：US243676
申请日：1981-03-13
申请人： Peter G. Borden , Ram R. Saxena
发明人： Peter G. Borden , Ram R. Saxena
IPC分类号： H01L31/04 , H01L25/04 , H01L27/142 , H01L31/043 , H01L31/0687 , H01L31/06
CPC分类号： H01L31/0687 , H01L27/142 , H01L31/043 , Y02E10/544
摘要： Direct ohmic contact between the cells in an epitaxially grown cascade solar cell is obtained by means of conductive interconnects formed through grooves etched intermittently in the upper cell. The base of the upper cell is directly connected by the conductive interconnects to the emitter of the bottom cell. The conductive interconnects preferably terminate on a ledge formed in the base of the upper cell.
摘要翻译：通过在上部电池中间歇蚀刻的沟槽形成的导电互连，获得外延生长级联太阳能电池中的电池之间的直接欧姆接触。上电池的基极通过导电互连直接连接到底电池的发射极。导电互连优选地终止在形成在上电池的基座中的凸缘上。

12. 发明授权

US09033534B2 Hands-free vision aid 有权
标题翻译：免提视力援助
公开(公告)号：US09033534B2
公开(公告)日：2015-05-19
申请号：US13410189
申请日：2012-03-01
申请人： Peter G. Borden , Peter H. Muller
发明人： Peter G. Borden , Peter H. Muller
IPC分类号： F21V21/08 , G02C11/04
CPC分类号： G02C11/04
摘要： Described herein are hands-free vision aids that may be used for low-vision reading. These vision aids may be beneficial for individuals with low-vision disorders such as age-related macular degeneration, retinitis pigmentosa, and other visual disorders. The vision aids described here comprise an optical system with one or more light sources configured to provide a rectangular field of illumination with high illuminance levels bounded by high contrast perimeter. Such an illumination field greatly illuminates a targeted viewing region while reducing glare that arises from illuminating peripheral regions. Some vision aids use green light with high illuminance values for improving visual acuity and comfort for long-duration reading. The optical system of a vision aid may be configured to fit onto and/or integrate with eyeglass frames.
摘要翻译：这里描述的是可以用于低视力阅读的免提视力辅助器。这些视力援助对于具有低视力障碍的个体，如年龄相关性黄斑变性，色素性视网膜炎和其他视觉障碍可能是有益的。这里描述的视觉辅助设备包括具有一个或多个光源的光学系统，其被配置为提供具有由高对比度周界限定的高照度水平的矩形照明场。这样的照明领域大大地照亮目标观看区域，同时减少由照射周边区域引起的眩光。一些视力辅助工具使用具有高照度值的绿灯，以提高长时间阅读的视力和舒适度。视力辅助装置的光学系统可以被配置成装配在眼镜框架上和/或与眼镜框架整合。

13. 发明申请

US20100226736A1 Stacked Load-Lock Apparatus and Method for High Throughput Solar Cell Manufacturing 失效
标题翻译：堆叠负载锁定装置和高吞吐量太阳能电池制造方法
公开(公告)号：US20100226736A1
公开(公告)日：2010-09-09
申请号：US12398769
申请日：2009-03-05
申请人： Peter G. Borden
发明人： Peter G. Borden
IPC分类号： H01L21/677 , B25J11/00
CPC分类号： H01L21/67201 , C23C14/566 , C23C16/4401 , C23C16/54
摘要： An apparatus with a plurality of load-lock chambers stacked having independently controlled pressures within their interior regions is provided. According to one or more embodiments, each load-lock chamber includes a pump valve connected to a pump line and a vent valve connected to a vent line to independently control the changes of pressure within the interior regions of the chambers. Methods for conveying substrates held within these chambers from the apparatus to one or more processing chambers, which may be in-line, are also provided.
摘要翻译：提供了具有多个在其内部区域内具有独立控制压力的负载锁定室的装置。根据一个或多个实施例，每个加载锁定室包括连接到泵管线的泵阀和连接到排气管线的排放阀，以独立地控制室内部区域内的压力变化。还提供了将保持在这些室内的基板从设备输送到可以是在线的一个或多个处理室的方法。

14. 发明授权

US07773211B2 Apparatus and method for determining stress in solar cells 失效
标题翻译：用于确定太阳能电池应力的装置和方法
公开(公告)号：US07773211B2
公开(公告)日：2010-08-10
申请号：US11695058
申请日：2007-04-02
申请人： Peter G. Borden
发明人： Peter G. Borden
IPC分类号： G01N21/00
CPC分类号： G01N21/9505 , G01L5/0047 , G01N21/23 , G01N21/9503
摘要： A method and system as described herein provides for detecting certain anomalies in a wafer. According to one aspect, these anomalies relate to defects or stress that can lead to wafer breakage before, during or after further wafer processing. According to other aspects, the method includes passing polarized light through a wafer and analyzing the transmitted light for any changes in polarization. According to additional aspects, the method includes analyzing the entire wafer in one image capturing operation. According to still further aspects, the light passed through the wafer is below the bandgap for a material such as silicon that comprises the wafer, so that substantially all light will be transmitted through rather than absorbed or reflected by the material. According to still further aspects, the detection operation can be rapid and automatic, so that it can be easily included in an overall processing sequence. According to yet additional aspects, the detection includes analyzing different portions of the wafer differently, for example using different contrast ratios for edge and center portions of the wafer respectively.
摘要翻译：本文所述的方法和系统提供用于检测晶片中的某些异常。根据一个方面，这些异常涉及在另外的晶片处理之前，期间或之后可能导致晶片断裂的缺陷或应力。根据其它方面，该方法包括使偏振光通过晶片并且分析透射光以实现极化的任何改变。根据另外的方面，该方法包括在一个图像捕获操作中分析整个晶片。根据另外的方面，通过晶片的光低于包括晶片的诸如硅的材料的带隙，使得基本上所有的光将被透射而不是被材料吸收或反射。根据另外的方面，检测操作可以快速和自动，从而可以容易地将其包括在整个处理顺序中。根据另外的方面，检测包括分别不同地分析晶片的不同部分，例如分别对晶片的边缘和中心部分使用不同的对比度比。

15. 发明申请

US20080119005A1 METHOD FOR PATTERNING MO LAYER IN A PHOTOVOLTAIC DEVICE COMPRISING CIGS MATERIAL USING AN ETCH PROCESS 失效
标题翻译：在使用蚀刻工艺的包含CIGS材料的光伏器件中绘制薄膜层的方法
公开(公告)号：US20080119005A1
公开(公告)日：2008-05-22
申请号：US11562573
申请日：2006-11-22
申请人： Timothy Weidman , Li Xu , Peter G. Borden
发明人： Timothy Weidman , Li Xu , Peter G. Borden
IPC分类号： H01L31/0272
CPC分类号： H01L31/0749 , H01L31/03923 , H01L31/0465 , H01L31/18 , Y02E10/541
摘要： A processing method described herein provides a method of patterning a MoSe2 and/or Mo material, for example a layer of such material(s) in a thin-film structure. According to one aspect, the invention relates to etch solutions that can effectively etch through Mo and/or MoSe2. According to another aspect, the invention relates to etching such materials when such materials are processed with other materials in a thin film photovoltaic device. According to other aspects, the invention includes a process of etching Mo and/or MoSe2 with selectivity to a layer of CIGS material in an overall process flow. According to still further aspects, the invention relates to Mo and/or MoSe2 etch solutions that are useful in an overall photolithographic process for forming a photovoltaic cell and/or interconnects and test structures in a photovoltaic device.
摘要翻译：本文所述的处理方法提供了一种图案化MoSe 2和/或Mo材料的方法，例如薄膜结构中的这种材料层。根据一个方面，本发明涉及可以有效地蚀刻通过Mo和/或MoSe 2的蚀刻溶液。根据另一方面，本发明涉及当这种材料在薄膜光伏器件中用其它材料加工时蚀刻这种材料。根据其它方面，本发明包括在整个工艺流程中对具有选择性的CIGS材料的Mo和/或MoSe 2进行蚀刻的工艺。根据另外的方面，本发明涉及可用于在光伏器件中形成光伏电池和/或互连和测试结构的整体光刻工艺中的Mo和/或MoSe 2 N 2蚀刻溶液。

16. 发明申请

US20080115821A1 MULTILAYER TRANSPARENT CONDUCTIVE OXIDE FOR IMPROVED CHEMICAL PROCESSING 审中-公开
标题翻译：用于改进化学处理的多层透明导电氧化物
公开(公告)号：US20080115821A1
公开(公告)日：2008-05-22
申请号：US11562565
申请日：2006-11-22
申请人： Li Xu , Peter G. Borden
发明人： Li Xu , Peter G. Borden
IPC分类号： H01L31/042
CPC分类号： H01L31/022466 , G02F1/13439 , H01L31/022425 , H01L31/0296 , H01L31/0322 , H01L31/046 , H01L31/0465 , H01L31/1828 , H01L31/1884 , Y02E10/50
摘要： A TCO layer structure and methods of processing the layer in thin film materials including other layers such as layers of CIGS material are disclosed herein. According to one aspect, the invention includes a novel design of a multi-layer TCO structure. According to another aspect, the TCO layer structure of the invention is comprised of inexpensive materials and is inexpensive to process and recycle. According to another aspect, the TCO layer structure of the invention is capable of being patterned using photolithographic and etch processing, but is also chemically durable.
摘要翻译：本文公开了一种TCO层结构和在包括其它层例如CIGS材料层的薄膜材料中处理该层的方法。根据一方面，本发明包括多层TCO结构的新颖设计。根据另一方面，本发明的TCO层结构由便宜的材料组成，并且处理和循环便宜。根据另一方面，本发明的TCO层结构能够使用光刻和蚀刻加工进行图案化，但也具有化学耐久性。

17. 发明授权

US07141440B2 Apparatus and method for measuring a property of a layer in a multilayered structure 有权
标题翻译：用于测量多层结构中的层的性质的装置和方法
公开(公告)号：US07141440B2
公开(公告)日：2006-11-28
申请号：US11120427
申请日：2005-05-02
申请人： Peter G. Borden , Ji Ping Li
发明人： Peter G. Borden , Ji Ping Li
IPC分类号： H01L21/00
CPC分类号： G01N27/041 , G01N21/1717
摘要： A property of a layer is measured by: (1) focusing a heating beam on a region (also called “heated region”) of a conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at any time the temperature of an optically absorbing layer is approximately equal to (e.g., within 90% of) a temperature of the optically absorbing layer when heated by an unmodulated beam, and (3) measuring the power of another beam that is (a) reflected by the heated region, and (b) modulated in phase with modulation of the heating beam. The measurement in act (3) can be used directly as a measure of the resistance (per unit area) of a conductive pad formed by patterning the conductive layer. Change in measurement across regions indicates a corresponding change in resistance of the layer.
摘要翻译：通过以下方式测量层的性质：（1）将加热束聚焦在导电层（2）的区域（也称为“加热区域”）上，该导电层以预定的频率调制加热束的功率，该预定频率被选择为足够低以确保在任何时候，光吸收层的温度近似等于当由未调制光束加热时光学吸收层的温度（例如，90％以内），和（3）测量另一个的功率（a）由加热区域反射的光束，和（b）通过加热光束的调制相位调制。作用（3）中的测量可以直接用作通过图案化导电层形成的导电焊盘的电阻（每单位面积）的量度。跨区域测量的变化表示层的电阻的相应变化。

18. 发明授权

US06963393B2 Measurement of lateral diffusion of diffused layers 有权
标题翻译：测量扩散层的横向扩散
公开(公告)号：US06963393B2
公开(公告)日：2005-11-08
申请号：US10253119
申请日：2002-09-23
申请人： Peter G. Borden
发明人： Peter G. Borden
IPC分类号： G01N21/17 , G01N21/55 , H01L21/66 , H01L23/544 , G01N1/10 , G01N21/00
CPC分类号： H01L22/20 , G01N21/1717 , G01N21/55 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e.g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e.g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.
摘要翻译：作为晶片制造工艺中的附加步骤，可以改变任何半导体晶片制造工艺以监测掺杂层的横向突然性。在一个实施例中，在生产晶片（例如与一个或多个晶体管同时）形成包括一个或多个掺杂区域的测试结构，并测量测试结构的一个或多个维度，并将其用作横向晶片中其他掺杂区域的突变，例如在同时形成的晶体管中。测试结构中的掺杂区域可以相对于彼此以规则间隔的间隔定位，或者替代地可以在相邻掺杂区域之间具有变化的间隔。或者或另外，可以在单个晶片中形成多个测试结构，其中在每个测试结构中以规则的空间间隔具有掺杂区域，而不同的测试结构具有不同的空间间隔。

19. 发明授权

US06812717B2 Use of a coefficient of a power curve to evaluate a semiconductor wafer 有权
标题翻译：使用功率曲线的系数来评估半导体晶片
公开(公告)号：US06812717B2
公开(公告)日：2004-11-02
申请号：US09799481
申请日：2001-03-05
申请人： Peter G. Borden , Regina G. Nijmeijer , Beverly J. Klemme
发明人： Peter G. Borden , Regina G. Nijmeijer , Beverly J. Klemme
IPC分类号： G01R3126
CPC分类号： G01R31/303
摘要： A coefficient of a function that relates a measurement from a wafer to a parameter used in making the measurement (such as the power of a beam used in the measurement) is determined. The coefficient is used to evaluate the wafer (e.g. to accept or reject the wafer for further processing), and/or to control fabrication of another wafer. In one embodiment, the coefficient is used to control operation of a wafer processing unit (that may include, e.g. an ion implanter), or a heat treatment unit (such as a rapid thermal annealer).
摘要翻译：确定将来自晶片的测量与用于进行测量的参数（诸如在测量中使用的光束的功率）相关联的功能的系数。该系数用于评估晶片（例如，接受或拒绝晶片以进行进一步处理）和/或控制另一晶片的制造。在一个实施例中，系数用于控制晶片处理单元（可包括例如离子注入机）或热处理单元（例如快速热退火炉）的操作。

20. 发明授权

US06426644B1 Apparatus and method for determining the active dopant profile in a semiconductor wafer 有权
标题翻译：用于确定半导体晶片中的有源掺杂物分布的装置和方法
公开(公告)号：US06426644B1
公开(公告)日：2002-07-30
申请号：US09935128
申请日：2001-08-21
申请人： Peter G. Borden , Regina G. Nijmeijer
发明人： Peter G. Borden , Regina G. Nijmeijer
IPC分类号： G01R3126
CPC分类号： G01N21/1717
摘要： A method (1) creates charge carriers in a concentration that changes in a periodic manner (also called “modulation”) only with respect to time, and (2) determines the umber of charge carriers created in the carrier creation region by measuring an interference signal obtained by interference between a reference beam and a portion of a probe beam that is reflected by charge carriers at various depths of the semiconductor material, and comparing the measurement with corresponding values obtained by simulation (e.g. in graphs of such measurements for different junction depths). Various properties of the reflected portion of the probe beam (such as power and phase) are functions of the depth at which the reflection occurs, and can be measured to determine the depth of the junction, and the profile of active dopants. Therefore, the just-described reflected portion of the probe beam is interfered with a reference beam formed by a portion of probe beam reflected by the front surface of the semiconductor material, and phase and amplitude of the interference signal resulting therefrom are both measured. Alternatively, phase difference between a first interference signal (obtained by interference of (1) a variable phase beam and (2) the portion of probe beam reflected by the front surface) and a second interference signal (obtained by interference of (1) the variable phase beam and (2) a portion of the probe beam reflected by charge carriers at various depths) indicates the junction depth.
摘要翻译：方法（1）以相对于时间周期性地改变（也称为“调制”）的浓度产生电荷载流子，以及（2）通过测量干扰来确定在载波产生区域中产生的载流子数量通过参考光束和由半导体材料的各种深度处的电荷载体反射的探测光束的一部分之间的干涉获得的信号，并将测量与通过模拟获得的相应值进行比较（例如，对于不同结深度的这种测量的图形）。探测光束的反射部分（例如功率和相位）的各种性质是发生反射深度的函数，并且可以测量结果的深度和活性掺杂剂的分布。因此，探测光束的刚刚描述的反射部分受到由半导体材料的前表面反射的探测光束的一部分形成的参考光束的干扰，并且测量由其产生的干涉信号的相位和幅度。或者，第一干涉信号（通过（1）可变相位波束的干扰和（2）由前表面反射的探测光束的部分）和第二干涉信号（通过（1）可变相位波束和（2）在不同深度处由电荷载体反射的探测光束的一部分）表示结深度。

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