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11. 发明申请

US20080009112A1 METHOD FOR FORMING A MEMORY DEVICE WITH A RECESSED GATE 有权
标题翻译：用于形成具有阻挡门的存储器件的方法
公开(公告)号：US20080009112A1
公开(公告)日：2008-01-10
申请号：US11858703
申请日：2007-09-20
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/8242
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/1087 , H01L27/10876
摘要： A method for forming a semiconductor memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.
摘要翻译：公开了一种用于形成具有凹入栅极的半导体存储器件的方法。提供其上具有垫层的衬底。图案化衬垫层和衬底以形成至少两个沟槽。在每个沟槽中形成深沟槽电容器。在每个深沟槽电容器上形成突起，其中每个突起的顶表面水平高于焊盘层的顶表面高度。间隔件形成在突起的侧壁上，并且使用间隔件和突起作为掩模来蚀刻衬垫层和衬底以形成凹部。在凹部中形成凹槽。

12. 发明授权

US07592233B2 Method for forming a memory device with a recessed gate 有权
标题翻译：用于形成具有凹入栅极的存储器件的方法
公开(公告)号：US07592233B2
公开(公告)日：2009-09-22
申请号：US11858703
申请日：2007-09-20
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/8242
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/1087 , H01L27/10876
摘要： A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.
摘要翻译：公开了一种用于形成具有凹入栅极的存储器件的方法。提供其上具有垫层的衬底。图案化衬垫层和衬底以形成至少两个沟槽。在每个沟槽中形成深沟槽电容器。在每个深沟槽电容器上形成突起，其中每个突起的顶表面水平高于焊盘层的顶表面高度。间隔件形成在突起的侧壁上，并且使用间隔件和突起作为掩模来蚀刻衬垫层和衬底以形成凹部。在凹部中形成凹槽。

13. 发明授权

US07316978B2 Method for forming recesses 有权
标题翻译：凹槽形成方法
公开(公告)号：US07316978B2
公开(公告)日：2008-01-08
申请号：US11195294
申请日：2005-08-02
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/26586 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/66621 , Y10S438/944 , Y10S438/947
摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.
摘要翻译：一种形成凹部的方法。该方法包括提供具有两个突起的基底，该突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上保形地形成掩模层和突起，使用第一将掩模与所述突起的第一侧壁相邻地植入，去除所述掩模层的注入部分以形成图案化掩模层，并且使用所述图案化掩模层蚀刻所述衬底，从而形成凹部。

14. 发明授权

US07179748B1 Method for forming recesses 有权
标题翻译：凹槽形成方法
公开(公告)号：US07179748B1
公开(公告)日：2007-02-20
申请号：US11195293
申请日：2005-08-02
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/26586 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/66621 , Y10S438/944 , Y10S438/947
摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer with a first angle using a first implanting mask adjacent to the first side wall of the protrusions, tilt implanting the mask layer with a second angle using a second implanting mask adjacent to the second side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess, wherein distances from the recess to the two protrusions, respectively, are different.
摘要翻译：一种形成凹部的方法。该方法包括提供具有两个突出物的两个突起，所述两个突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上共形成掩模层和突起，倾斜地将掩模层以第一使用与突起的第一侧壁相邻的第一注入掩模的角度，使用与突起的第二侧壁相邻的第二注入掩模以第二角度注入掩模层，去除掩模层的植入部分以形成图案化掩模层，并使用图案化掩模层蚀刻基板，从而形成凹部，其中分别从凹部到两个突起的距离不同。

15. 发明申请

US20060270176A1 Method for forming a semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US20060270176A1
公开(公告)日：2006-11-30
申请号：US11140889
申请日：2005-05-31
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/20
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/1087 , H01L27/10876
摘要： A method for forming a semiconductor device. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is formed on each deep trench capacitor, wherein a top surface level of each protrusion is higher than that of the pad layer. Spacers are formed on sidewalls of the protrusions, and the pad layer and the substrate are etched using the spacers and the protrusions as a mask to form a recess. A recessed gate is formed in the recess.
摘要翻译：一种形成半导体器件的方法。提供其上具有垫层的衬底。图案化衬垫层和衬底以形成至少两个沟槽。在每个沟槽中形成深沟槽电容器。在每个深沟槽电容器上形成突起，其中每个突起的顶表面水平高于焊盘层的顶表面高度。间隔件形成在突起的侧壁上，并且使用间隔件和突起作为掩模来蚀刻衬垫层和衬底以形成凹部。在凹部中形成凹槽。

16. 发明授权

US07563686B2 Method for forming a memory device with a recessed gate 有权
标题翻译：用于形成具有凹入栅极的存储器件的方法
公开(公告)号：US07563686B2
公开(公告)日：2009-07-21
申请号：US11140889
申请日：2005-05-31
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/20
CPC分类号： H01L29/66621 , H01L27/10823 , H01L27/10829 , H01L27/1087 , H01L27/10876
摘要： A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor device is formed in each trench. The pad layer is recessed until upper portions of the deep trench capacitor devices are revealed. Spacers are formed on sidewalls of the upper portions of the deep trench capacitor devices. The pad layer and the substrate are etched using the spacers and the deep trench capacitor devices as a mask to form a recess, and a recessed gate is formed in the recess.
摘要翻译：公开了一种用于形成具有凹入栅极的存储器件的方法。提供其上具有垫层的衬底。图案化衬垫层和衬底以形成至少两个沟槽。在每个沟槽中形成深沟槽电容器器件。衬垫层凹进直到深沟槽电容器器件的上部露出。间隔件形成在深沟槽电容器器件的上部的侧壁上。使用间隔物和深沟槽电容器器件作为掩模来蚀刻焊盘层和衬底以形成凹部，并且在凹部中形成凹入栅极。

17. 发明申请

US20070032085A1 METHOD FOR FORMING RECESSES 有权
标题翻译：形成记忆的方法
公开(公告)号：US20070032085A1
公开(公告)日：2007-02-08
申请号：US11195293
申请日：2005-08-02
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/311 , H01L21/302
CPC分类号： H01L21/3086 , H01L21/26586 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/66621 , Y10S438/944 , Y10S438/947
摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer with a first angle using a first implanting mask adjacent to the first side wall of the protrusions, tilt implanting the mask layer with a second angle using a second implanting mask adjacent to the second side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess, wherein distances from the recess to the two protrusions, respectively, are different.
摘要翻译：一种形成凹部的方法。该方法包括提供具有两个突出物的两个突起，所述两个突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上共形成掩模层和突起，倾斜地将掩模层以第一使用与突起的第一侧壁相邻的第一注入掩模的角度，使用与突起的第二侧壁相邻的第二注入掩模以第二角度注入掩模层，去除掩模层的植入部分以形成图案化掩模层，并使用图案化掩模层蚀刻基板，从而形成凹部，其中分别从凹部到两个突起的距离不同。

18. 发明申请

US20070032038A1 Method for forming recesses 有权
标题翻译：凹槽形成方法
公开(公告)号：US20070032038A1
公开(公告)日：2007-02-08
申请号：US11195294
申请日：2005-08-02
申请人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
发明人： Pei-Ing Lee , Chung-Yuan Lee , Chien-Li Cheng
IPC分类号： H01L21/76
CPC分类号： H01L21/3086 , H01L21/26586 , H01L27/10823 , H01L27/10829 , H01L27/10876 , H01L29/66621 , Y10S438/944 , Y10S438/947
摘要： A method for forming a recess. The method includes providing a substrate with two protrusions having a first side wall and a second side wall opposite to the first side wall disposed above the substrate, conformally forming a mask layer on the substrate and the protrusions, tilt implanting the mask layer using a first implanting mask adjacent to the first side wall of the protrusions, removing implanted portions of the mask layer to form a patterned mask layer, and etching the substrate using the patterned mask layer, thereby forming a recess.
摘要翻译：一种形成凹部的方法。该方法包括提供具有两个突起的基底，该突起具有第一侧壁和与设置在基底上方的第一侧壁相对的第二侧壁，在基底上保形地形成掩模层和突起，使用第一将掩模与所述突起的第一侧壁相邻地植入，去除所述掩模层的注入部分以形成图案化掩模层，并且使用所述图案化掩模层蚀刻所述衬底，从而形成凹部。

19. 发明授权

US07682902B2 Memory structure and method of making the same 有权
标题翻译：内存结构和制作方法
公开(公告)号：US07682902B2
公开(公告)日：2010-03-23
申请号：US11949786
申请日：2007-12-04
申请人： Ching-Nan Hsiao , Pei-Ing Lee , Ming-Cheng Chang , Chung-Lin Huang , Hsi-Hua Chang , Chih-Hsiang Wu
发明人： Ching-Nan Hsiao , Pei-Ing Lee , Ming-Cheng Chang , Chung-Lin Huang , Hsi-Hua Chang , Chih-Hsiang Wu
IPC分类号： H01L21/336
CPC分类号： H01L27/11534 , H01L21/84 , H01L27/11526 , H01L29/42336 , H01L29/66825 , H01L29/7887
摘要： A memory structure disclosed in the present invention features a control gate and floating gates being positioned in recessed trenches. A method of fabricating the memory structure includes the steps of first providing a substrate having a first recessed trench. Then, a first gate dielectric layer is formed on the first recessed trench. A first conductive layer is formed on the first gate dielectric layer. After that, the first conductive layer is etched to form a spacer which functions as a floating gate on a sidewall of the first recessed trench. A second recessed trench is formed in a bottom of the first recessed trench. An inter-gate dielectric layer is formed on a surface of the spacer, a sidewall and a bottom of the second recessed trench. A second conductive layer formed to fill up the first and the second recessed trench.
摘要翻译：本发明公开的存储器结构的特征在于控制栅极和位于凹槽中的浮栅。一种制造存储器结构的方法包括以下步骤：首先提供具有第一凹槽的衬底。然后，在第一凹槽上形成第一栅极电介质层。第一导电层形成在第一栅极介电层上。之后，蚀刻第一导电层以形成用作第一凹槽的侧壁上的浮动栅极的间隔物。在第一凹槽的底部形成第二凹槽。在间隔物的表面，第二凹槽的侧壁和底部上形成栅极间电介质层。形成为填充第一和第二凹槽的第二导电层。

20. 发明申请

US20080135907A1 SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有高温闸门的半导体器件及其制造方法
公开(公告)号：US20080135907A1
公开(公告)日：2008-06-12
申请号：US12021969
申请日：2008-01-29
申请人： Jeng-Ping Lin , Pei-Ing Lee
发明人： Jeng-Ping Lin , Pei-Ing Lee
IPC分类号： H01L27/108
CPC分类号： H01L29/7834 , H01L27/10876 , H01L29/42368 , H01L29/66621
摘要： A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
摘要翻译：提供一种制造具有沟槽栅极的半导体器件的方法。首先，提供其上具有沟槽蚀刻掩模的半导体衬底。蚀刻半导体衬底以形成具有第一深度的第一沟槽，使用沟槽蚀刻掩模作为屏蔽。杂质通过第一沟槽掺杂到半导体衬底中以形成掺杂区域。蚀刻第一沟槽下面的掺杂区域和半导体衬底以形成具有大于第一深度的第二深度的第二沟槽，其中第二沟槽具有侧壁和底部。栅极绝缘层形成在第二沟槽的侧壁和底部上。沟槽栅极形成在第二沟槽中。

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