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11. 发明授权

US07850779B2 Apparatus and process for plasma-enhanced atomic layer deposition 失效
标题翻译：等离子体增强原子层沉积的装置和工艺
公开(公告)号：US07850779B2
公开(公告)日：2010-12-14
申请号：US11556758
申请日：2006-11-06
申请人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
发明人： Paul Ma , Kavita Shah , Dien-Yeh Wu , Seshadri Ganguli , Christophe Marcadal , Frederick C. Wu , Schubert S. Chu
IPC分类号： C23C16/452 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，提供了一种用于在处理室内进行气相沉积工艺的盖组件，其包括绝缘盖和等离子体屏。在一个示例中，绝缘帽具有被配置为使第一处理气体从上表面流动到扩张通道的集中通道，以及构造成将第二处理气体从上表面流动到围绕扩展通道的凹槽的外通道。在一个示例中，等离子体屏幕具有包含具有多个孔的内部区域和具有多个狭槽的外部区域的上表面。绝缘帽可以位于等离子体屏幕的顶部，以形成具有扩展通道的集中气体区域和具有凹槽的圆形气体区域。

12. 发明申请

US20080041311A1 CHEMICAL DELIVERY APPARATUS FOR CVD OR ALD 有权
标题翻译：化学输送装置用于CVD或ALD
公开(公告)号：US20080041311A1
公开(公告)日：2008-02-21
申请号：US11925670
申请日：2007-10-26
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： Embodiments described herein provide ampoule assemblies to contain, store, or dispense chemical precursors. In one embodiment, an ampoule assembly is provided which includes an ampoule containing a first material layer disposed on the outside of the ampoule and a second material layer disposed over the first material layer, wherein the first material layer is thermally more conductive than the second material layer, an inlet line in fluid communication with the ampoule and containing a first manual shut-off valve disposed therein, an outlet line in fluid communication with the ampoule and containing a second manual shut-off valve disposed therein, and a first bypass line connected between the inlet line and the outlet line. In some embodiments, the ampoule assembly may contain disconnect fittings. In other embodiments, the first bypass line has a shut-off valve disposed therein to fluidly couple or decouple the input line and the outlet line.
摘要翻译：本文所述的实施方案提供用于容纳，储存或分配化学前体的安瓿组件。在一个实施例中，提供安瓿组件，其包括安瓿，其包含设置在安瓿的外侧上的第一材料层和设置在第一材料层上的第二材料层，其中第一材料层比第二材料热导热层，与安瓿流体连通并且容纳设置在其中的第一手动截止阀的入口管线，与安瓿流体连通并且容纳设置在其中的第二手动截止阀的出口管线和连接的第一旁路管线在入口管线和出口管线之间。在一些实施例中，安瓿组件可以包含断开配件。在其他实施例中，第一旁路管线具有设置在其中的截止阀，以便将输入管线和出口管线流体耦合或解耦。

13. 发明申请

US20070235085A1 Chemical delivery apparatus for CVD or ALD 有权
标题翻译：用于CVD或ALD的化学输送装置
公开(公告)号：US20070235085A1
公开(公告)日：2007-10-11
申请号：US11394448
申请日：2006-03-30
申请人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
发明人： Norman Nakashima , Christophe Marcadal , Seshadri Ganguli , Paul Ma , Schubert Chu
IPC分类号： F16K3/36 , F16K11/20
CPC分类号： C23C16/4481 , C23C16/4408 , C23C16/45561 , Y10T137/3127 , Y10T137/4259 , Y10T137/87249 , Y10T137/877
摘要： An ampoule assembly is configured with a bypass line and valve to allow the purging of the lines and valves connected to the ampoule. The ampoule assembly, in one embodiment, includes an ampoule, an inlet line, an outlet line, and a bypass line connected between the inlet line and the outlet line, the bypass line having a shut-off valve disposed therein to fluidly couple or decouple the inlet line and the outlet line. The shut-off valve disposed in the bypass line may be remotely controllable. Also, additional remotely controllable shut-off valves may be provided in the inlet and the outlet lines.
摘要翻译：安瓿组件配置有旁通管线和阀，以允许清洗连接到安瓿的管线和阀。在一个实施例中，安瓿组件包括安瓿瓶，入口管线，出口管线和连接在入口管线和出口管线之间的旁通管线，旁通管线具有设置在其中的截止阀以流体耦合或解耦入口管线和出口管路。设置在旁路管路中的截止阀可以是远程控制的。此外，可以在入口和出口管线中设置附加的可远程控制的截止阀。

14. 发明授权

US07597758B2 Chemical precursor ampoule for vapor deposition processes 有权
标题翻译：用于气相沉积工艺的化学前体安瓿瓶
公开(公告)号：US07597758B2
公开(公告)日：2009-10-06
申请号：US11849125
申请日：2007-08-31
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B23/08
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
摘要翻译：本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在内部体积的较低区域。该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝向侧壁引导并从出口端口移开。在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

15. 发明授权

US07588736B2 Apparatus and method for generating a chemical precursor 有权
标题翻译：用于产生化学前体的装置和方法
公开(公告)号：US07588736B2
公开(公告)日：2009-09-15
申请号：US11383642
申请日：2006-05-16
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： F27B15/08
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of an apparatus for generating a chemical precursor used in a vapor deposition processing system are provide which include a canister having a sidewall, a top, and a bottom forming an interior volume which is in fluid communication with an inlet port and an outlet port. The canister contains a plurality of baffles that extend from the bottom to an upper portion of the interior volume and form an extended mean flow path between the inlet port and the outlet port. In one embodiment, the baffles are contained on a prefabricated insert positioned on the bottom of the canister. In one example, an inlet tube may extend from the inlet port into the interior region and be positioned substantially parallel to the baffles. An outlet end of the inlet tube may be adapted to direct a gas flow away from the outlet port, such as towards the sidewall or top of the canister.
摘要翻译：提供了一种用于生成在气相沉积处理系统中使用的化学前体的装置的实施例，其包括具有侧壁，顶部和底部的罐，该罐形成与入口端口和出口端口流体连通的内部容积。罐包含多个挡板，其从内部容积的底部延伸到上部，并且在入口和出口之间形成延伸的平均流动路径。在一个实施例中，挡板包含在位于罐底部的预制插入件上。在一个示例中，入口管可以从入口端口延伸到内部区域中并且基本平行于挡板定位。入口管的出口端可以适于将气流引导离开出口，例如朝向罐的侧壁或顶部。

16. 发明申请

US20080216743A1 CHEMICAL PRECURSOR AMPOULE FOR VAPOR DEPOSITION PROCESSES 有权
标题翻译：化学前驱体用于蒸气沉积过程
公开(公告)号：US20080216743A1
公开(公告)日：2008-09-11
申请号：US11849125
申请日：2007-08-31
申请人： LING CHEN , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： LING CHEN , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/06
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the invention provide chemical precursor ampoules that may be used during vapor deposition processes. In one embodiment, an apparatus for generating a chemical precursor gas used in a vapor deposition processing system is provided which includes a canister having a sidewall, a top, and a bottom forming an interior volume and a solid precursor material at least partially contained within a lower region of the interior volume. The apparatus further contains an inlet port and an outlet port in fluid communication with the interior volume and an inlet tube connected to the inlet port and positioned to direct a carrier gas towards the sidewall and away form the outlet port. In one example, the solid precursor contains pentakis(dimethylamido) tantalum (PDMAT). In another example, the apparatus contains a plurality of baffles that form an extended mean flow path between the inlet port and the outlet port.
摘要翻译：本发明的实施方案提供可在气相沉积工艺期间使用的化学前体安瓿。在一个实施例中，提供了一种用于产生在气相沉积处理系统中使用的化学前体气体的装置，其包括具有侧壁，顶部和形成内部容积的底部的罐，以及固体前体材料，其至少部分地包含在内部体积的较低区域。该装置还包括与内部空间流体连通的入口端口和出口端口，以及连接到入口端口的入口管，并且定位成将载气朝着侧壁引导并从出口端口移开。在一个实例中，固体前体含有五（二甲基氨基）钽（PDMAT）。在另一示例中，该装置包含多个挡板，其在入口和出口之间形成延伸的平均流动路径。

17. 发明授权

US08062422B2 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US08062422B2
公开(公告)日：2011-11-22
申请号：US12371138
申请日：2009-02-13
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B25/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
摘要翻译：本文描述的实施例涉及用于产生半导体处理系统的前体的装置。在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。

18. 发明授权

US06905541B2 Method and apparatus of generating PDMAT precursor 有权
标题翻译：生成PDMAT前体的方法和装置
公开(公告)号：US06905541B2
公开(公告)日：2005-06-14
申请号：US10447255
申请日：2003-05-27
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C23C16/18 , C23C16/34 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/31 , C30B25/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A precursor and method for filling a feature in a substrate. The method generally includes depositing a barrier layer, the barrier layer being formed from pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The method additionally may include depositing a seed layer over the barrier layer and depositing a conductive layer over the seed layer. The precursor generally includes pentakis(dimethylamido)tantalum having less than about 5 ppm of chlorine. The precursor is generated in a canister having a surrounding heating element configured to reduce formation of impurities.
摘要翻译：用于填充衬底中的特征的前体和方法。该方法通常包括沉积阻挡层，阻挡层由具有小于约5ppm氯的五（二甲基氨基）钽形成。该方法另外可以包括在阻挡层上沉积种子层并在种子层上沉积导电层。前体通常包括具有小于约5ppm氯的五（二甲基氨基）钽。在具有周围加热元件的罐中产生前体，该加热元件被配置为减少杂质的形成。

19. 发明授权

US07524374B2 Method and apparatus for generating a precursor for a semiconductor processing system 有权
标题翻译：用于产生半导体处理系统的前体的方法和装置
公开(公告)号：US07524374B2
公开(公告)日：2009-04-28
申请号：US10590448
申请日：2004-05-27
申请人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
发明人： Ling Chen , Vincent W. Ku , Hua Chung , Christophe Marcadal , Seshadri Ganguli , Jenny Lin , Dien-Yeh Wu , Alan Ouye , Mei Chang
IPC分类号： C30B21/02
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/4481 , H01L21/28562 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

20. 发明申请

US20080149031A1 AMPOULE WITH A THERMALLY CONDUCTIVE COATING 有权
标题翻译：具有导热涂层的安瓿
公开(公告)号：US20080149031A1
公开(公告)日：2008-06-26
申请号：US11960212
申请日：2007-12-19
申请人： SCHUBERT S. CHU , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
发明人： SCHUBERT S. CHU , Christophe Marcadal , Seshadri Ganguli , Norman M. Nakashima , Dien-Yeh Wu
IPC分类号： C23C16/00
CPC分类号： C23C16/4482 , C23C16/4481
摘要： Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.
摘要翻译：本发明的实施方案提供了用于产生在气相沉积处理系统中使用的化学前体的装置和方法。该装置包括具有侧壁，顶部和底部的罐（例如，安瓿），其内部容纳有内部容积，与内部空间流体连通的入口和出口以及设置在外表面上或上方的导热涂层的罐子。导热涂层比罐的外表面更加导热。导热涂层可以含有铝，氮化铝，铜，黄铜，银，钛，氮化硅或其合金。在一些实施例中，粘合层（例如，钛或钽）可以设置在罐的外表面和导热涂层之间。在其它实施例中，罐可以包含多个挡板或固体传热颗粒以帮助均匀地加热其中的固体前体。

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