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    • 13. 发明申请
    • SECURE REMOTE PAYMENT TRANSACTION PROCESSING
    • 安全远程付款交易处理
    • US20150019443A1
    • 2015-01-15
    • US14332245
    • 2014-07-15
    • John SheetsKim WagnerChristian AabyeFrederick LiuIgor KarpenkoGlenn PowellKiushan Pirzadeh
    • John SheetsKim WagnerChristian AabyeFrederick LiuIgor KarpenkoGlenn PowellKiushan Pirzadeh
    • G06Q20/32G06Q20/38
    • G06Q20/3278G06Q20/322G06Q20/3829
    • Embodiments of the present invention are directed to methods, apparatuses, computer readable media and systems for securely processing remote transactions. One embodiment of the invention is directed to a method of processing a remote transaction initiated by a mobile device comprising a server computer receiving a payment request including encrypted payment information. The encrypted payment information being generated by a mobile payment application of the mobile device and being encrypted using a third party key. The method further comprises decrypting the encrypted payment information using the third party key, determining a transaction processor public key associated with the payment information, and re-encrypting the payment information using the transaction processor public key. The method further comprises sending a payment response including the re-encrypted payment information to a transaction processor. The transaction processor decrypts the re-encrypted payment information using a transaction processor private key and initiates a payment transaction.
    • 本发明的实施例涉及用于安全地处理远程事务的方法,装置,计算机可读介质和系统。 本发明的一个实施例涉及一种处理由移动设备发起的远程交易的方法,该移动设备包括服务器计算机接收包括加密支付信息的支付请求。 加密的支付信息由移动设备的移动支付应用程序生成,并使用第三方密钥进行加密。 该方法还包括使用第三方密钥对加密的支付信息进行解密,确定与支付信息相关联的交易处理器公开密钥,以及使用交易处理器公开密钥重新加密支付信息。 该方法还包括向业务处理器发送包括重新加密的支付信息的支付响应。 交易处理器使用交易处理器私钥解密重新加密的支付信息并启动支付交易。
    • 16. 发明申请
    • METHOD AND SYSTEM FOR CROSS-ISSUER REGISTRATION OF TRANSACTION CARDS
    • 交易发行人注册交易卡的方法和系统
    • US20080071680A1
    • 2008-03-20
    • US11855795
    • 2007-09-14
    • John Sheets
    • John Sheets
    • G06Q40/00
    • G06Q20/403G06Q20/10G06Q20/102G06Q20/108G06Q20/24G06Q20/40G06Q40/00G06Q40/025
    • Disclosed herein is a method of providing one or more transaction card services to a holder of a transaction card, the method comprising receiving a registration code from the holder, wherein the registration code is associated with the issuer of the transaction card and with the transaction card, determining the issuer of the transaction card based on at least a portion of the registration code, transmitting the registration code to the issuer of the transaction card, receiving account information from the issuer, wherein the account information is associated with the registration code and with the transaction card, displaying at least a portion of the account information to the holder, receiving a verification value corresponding to the account information from the holder, and if the verification value is valid, permitting the holder to select one or more services in which to enroll.
    • 本文公开了一种向交易卡的持有者提供一个或多个交易卡服务的方法,该方法包括从持有者接收注册码,其中注册码与交易卡的发行者和交易卡相关联 根据所述注册码的至少一部分确定所述交易卡的发行者,向所述交易卡的发行者发送所述注册码,从所述发行者接收账户信息,其中所述账户信息与所述注册码相关联,并且与 所述交易卡将所述帐户信息的至少一部分显示给所述持有者,从所述持有者接收对应于所述帐户信息的验证值,并且如果所述验证值有效,则允许所述持有者选择一个或多个服务, 注册。
    • 17. 发明申请
    • Polysilicon Conductor Width Measurement for 3-Dimensional FETs
    • 三维FET的多晶硅导体宽度测量
    • US20070128740A1
    • 2007-06-07
    • US11670008
    • 2007-02-01
    • Richard DonzeWilliam HovisTerrance KueperJohn SheetsJon Tetzloff
    • Richard DonzeWilliam HovisTerrance KueperJohn SheetsJon Tetzloff
    • H01L21/66
    • H01L27/1203H01L22/34H01L29/785
    • An apparatus and method is disclosed for determining polysilicon conductor width for 3-dimensional field effect transistors (FinFETs). Two or more resistors are constructed using a topology in which polysilicon conductors are formed over a plurality of silicon “fins”. A first resistor has a first line width. A second resistor has a second line width. The second line width is slightly different than the first line width. Advantageously, the first line width is equal to the nominal design width used to make FET gates in the particular semiconductor technology. Resistance measurements of the resistors and subsequent calculations using the resistance measurements are used to determine the actual polysilicon conductor width produced by the semiconductor process. A composite test structure not only allows calculation of the polysilicon conductor width, but provides proof that differences in the widths used in the calculations do not introduce objectionable etching characteristics of the polysilicon conductors.
    • 公开了一种用于确定三维场效应晶体管(FinFET)的多晶硅导体宽度的装置和方法。 使用其中在多个硅“鳍”上形成多晶硅导体的拓扑构造两个或更多个电阻器。 第一电阻器具有第一线宽度。 第二电阻具有第二线宽。 第二行宽度与第一行宽度略有不同。 有利地,第一线宽度等于在特定半导体技术中用于制造FET栅极的标称设计宽度。 电阻的电阻测量和使用电阻测量的随后的计算用于确定由半导体工艺产生的实际多晶硅导体宽度。 复合测试结构不仅允许计算多晶硅导体宽度,而且提供了在计算中使用的宽度差不会引起多晶硅导体的不良刻蚀特性的证据。
    • 19. 发明申请
    • Polysilicon conductor width measurement for 3-dimensional FETs
    • 三维FET的多晶硅导体宽度测量
    • US20060063317A1
    • 2006-03-23
    • US10944622
    • 2004-09-17
    • Richard DonzeWilliam HovisTerrance KueperJohn SheetsJon Tetzloff
    • Richard DonzeWilliam HovisTerrance KueperJohn SheetsJon Tetzloff
    • H01L21/338
    • H01L27/1203H01L22/34H01L29/785
    • An apparatus and method is disclosed for determining polysilicon conductor width for 3-dimensional field effect transistors (FinFETs). Two or more resistors are constructed using a topology in which polysilicon conductors are formed over a plurality of silicon “fins”. A first resistor has a first line width. A second resistor has a second line width. The second line width is slightly different than the first line width. Advantageously, the first line width is equal to the nominal design width used to make FET gates in the particular semiconductor technology. Resistance measurements of the resistors and subsequent calculations using the resistance measurements are used to determine the actual polysilicon conductor width produced by the semiconductor process. A composite test structure not only allows calculation of the polysilicon conductor width, but provides proof that differences in the widths used in the calculations do not introduce objectionable etching characteristics of the polysilicon conductors.
    • 公开了一种用于确定三维场效应晶体管(FinFET)的多晶硅导体宽度的装置和方法。 使用其中在多个硅“鳍”上形成多晶硅导体的拓扑构造两个或更多个电阻器。 第一电阻器具有第一线宽度。 第二电阻具有第二线宽。 第二行宽度与第一行宽度略有不同。 有利地,第一线宽度等于在特定半导体技术中用于制造FET栅极的标称设计宽度。 电阻的电阻测量和使用电阻测量的随后的计算用于确定由半导体工艺产生的实际多晶硅导体宽度。 复合测试结构不仅允许计算多晶硅导体宽度,而且提供了在计算中使用的宽度差不会引起多晶硅导体的不良刻蚀特性的证据。