专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07061565B2 Array substrate having double-layered metal patterns and method of fabricating the same 有权
标题翻译：具有双层金属图案的阵列基板及其制造方法
公开(公告)号：US07061565B2
公开(公告)日：2006-06-13
申请号：US10685419
申请日：2003-10-16
申请人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
发明人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
IPC分类号： G02F1/1343 , G02F1/136 , H01L31/20 , H01L29/04 , H01L21/20
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124
摘要： An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention. The array substrate includes a gate electrode and a gate line each having a molybdenum alloy (Mo-alloy) layer and a copper (Cu) layer configured sequentially on a substrate; a gate insulation layer on the substrate to cover the gate electrode and the gate line; an active layer arranged on the gate insulation layer in a portion over the gate electrode; an ohmic contact layer on the active layer; a data line on the gate insulation layer, the data line crossing the gate line and defining a pixel region; source and drain electrodes on the ohmic contact layer, the source electrode extending from the data line, and the drain electrode spaced apart from the source electrode; a passivation layer on the gate insulation layer covering the data line and the source and drain electrode, the passivation layer having a drain contact hole exposing a portion of the drain electrode; and a pixel electrode configured on the passivation layer in the pixel region, the pixel electrode electrically contacting the drain electrode through the drain contact hole.
摘要翻译：在本发明中公开了具有用于液晶显示装置的双层金属图案的阵列基板及其制造方法。阵列基板包括栅极电极和栅极线，每个栅极线均具有在基板上顺序配置的钼合金（Mo合金）层和铜（Cu）层; 栅极绝缘层，覆盖栅电极和栅极线; 位于所述栅电极上的部分上的所述栅极绝缘层上的有源层; 有源层上的欧姆接触层; 栅极绝缘层上的数据线，与栅极线交叉并限定像素区域的数据线; 欧姆接触层上的源极和漏极，从数据线延伸的源电极和与源电极间隔开的漏电极; 覆盖数据线和源极和漏极的栅极绝缘层上的钝化层，钝化层具有暴露出漏电极的一部分的漏极接触孔; 以及像素电极，其构造在所述像素区域中的所述钝化层上，所述像素电极通过所述漏极接触孔与所述漏电极电接触。

12. 发明授权

US08514340B2 Method of fabricating array substrate having double-layered patterns 有权
公开(公告)号：US08514340B2
公开(公告)日：2013-08-20
申请号：US12320133
申请日：2009-01-16
申请人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
发明人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
IPC分类号： G02F1/136 , G02F1/1343 , G09G3/36 , H01L29/04
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458
摘要： An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention. The array substrate includes a gate electrode and a gate line each having a molybdenum alloy (Mo-alloy) layer and a copper (Cu) layer configured sequentially on a substrate; a gate insulation layer on the substrate to cover the gate electrode and the gate line; an active layer arranged on the gate insulation layer in a portion over the gate electrode; an ohmic contact layer on the active layer; a data line on the gate insulation layer, the data line crossing the gate line and defining a pixel region; source and drain electrodes on the ohmic contact layer, the source electrode extending from the data line, and the drain electrode spaced apart from the source electrode; a passivation layer on the gate insulation layer covering the data line and the source and drain electrode, the passivation layer having a drain contact hole exposing a portion of the drain electrode; and a pixel electrode configured on the passivation layer in the pixel region, the pixel electrode electrically contacting the drain electrode through the drain contact hole.

13. 发明授权

US07791573B2 Etching solution for multiple layer of copper and molybdenum and etching method using the same 有权
标题翻译：蚀刻溶液用于多层铜和钼的蚀刻方法使用
公开(公告)号：US07791573B2
公开(公告)日：2010-09-07
申请号：US12219446
申请日：2008-07-22
申请人： Seong-Su Kim , Yong-Suk Choi , Gee-Sung Chae , Gyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seung-Yong Lee
发明人： Seong-Su Kim , Yong-Suk Choi , Gee-Sung Chae , Gyoo-Chul Jo , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seung-Yong Lee
IPC分类号： G09G3/36
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , H01L21/32134
摘要： An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.
摘要翻译：用于多层铜和钼的蚀刻溶液包括：约5％至约30％重量的过氧化氢; 约0.5重量％至约5重量％的有机酸; 约0.2重量％至约5重量％的磷酸盐; 约0.2重量％至约5重量％的具有氮的第一添加剂; 约0.2重量％至约5重量％的具有氮气的第二添加剂; 约0.01重量％至约1.0重量％的氟化合物; 和去离子水，使总量的蚀刻溶液100重量％。

14. 发明授权

US07091165B2 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US07091165B2
公开(公告)日：2006-08-15
申请号：US10694951
申请日：2003-10-29
申请人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
发明人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
IPC分类号： C11D1/00
CPC分类号： C11D3/2068 , C11D1/22 , C11D7/263 , C11D7/34 , C11D11/0047
摘要： A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括：约0.1％至约10％重量的烷基苯磺酸化合物; 约10重量％至约99重量％的乙二醇醚化合物; 和约0.5重量％至约5重量％的腐蚀抑制剂。

15. 发明授权

US07384900B2 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US07384900B2
公开(公告)日：2008-06-10
申请号：US10924841
申请日：2004-08-25
申请人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang , Suk-ll Yoon
发明人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang , Suk-ll Yoon
IPC分类号： C11D7/50
CPC分类号： C11D3/0073 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425
摘要： A composition for removing a copper-compatible resist includes about 10 to 30% by weight of an amine compound solvent, the amine compound solvent including an alkanol amine, about 10 to 80% by weight of a glycol group solvent, about 9.5 to 80% by weight of a polar solvent, and about 0.5 to 10% by weight of a corrosion inhibitor.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括约10至30重量％的胺化合物溶剂，包括烷醇胺的胺化合物溶剂，约10至80重量％的二醇基溶剂，约9.5至80重量％的极性溶剂和约0.5-10重量％的腐蚀抑制剂。

16. 发明授权

US06881679B2 Etching solution for etching Cu and Cu/Ti metal layer of liquid crystal display device and method of fabricating the same 有权
标题翻译：用于蚀刻用于蚀刻液晶显示装置的Cu和Cu / Ti金属层的蚀刻溶液及其制造方法
公开(公告)号：US06881679B2
公开(公告)日：2005-04-19
申请号：US10331726
申请日：2002-12-31
申请人： Gyoo-Chul Jo , Gee-Sung Chae , Yong-Sup Hwang , Oh-Nam Kwon , Kyoung-Mook Lee , Kui-Jong Baek , Tai-Hyung Rhee
发明人： Gyoo-Chul Jo , Gee-Sung Chae , Yong-Sup Hwang , Oh-Nam Kwon , Kyoung-Mook Lee , Kui-Jong Baek , Tai-Hyung Rhee
IPC分类号： G02F1/13 , C23F1/18 , C23F1/26 , H01L21/00 , H01L21/302 , H01L21/3213
CPC分类号： H01L21/32134 , C23F1/18 , C23F1/26 , Y10S436/80
摘要： An etching solution for etching one of a copper single metal layer and a copper (Cu)/titanium (Ti) double metal layer that serves as one of a gate electrode, a source electrode, and a drain electrode of a thin film transistor for a liquid crystal display (LCD) device includes oxone, fluoric compounds, one of a reducing agent and a weak oxidizing agent, an etching rate restrainer, KHF2, and water.
摘要翻译：一种蚀刻溶液，用于蚀刻用作薄膜晶体管的栅电极，源电极和漏电极之一的铜单金属层和铜（Cu）/钛（Ti）双金属层之一，液晶显示器（LCD）装置包括牛酮，氟化合物，还原剂和弱氧化剂之一，蚀刻速率抑制剂，KHF 2 N和水。

17. 发明申请

US20090227053A1 Method of fabricating array substrate having double-layered patterns 有权
标题翻译：具有双层图案的阵列基板的制造方法
公开(公告)号：US20090227053A1
公开(公告)日：2009-09-10
申请号：US12320133
申请日：2009-01-16
申请人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
发明人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
IPC分类号： H01L21/283 , G02F1/13
CPC分类号： G02F1/136286 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458
摘要： An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention. The array substrate includes a gate electrode and a gate line each having a molybdenum alloy (Mo-alloy) layer and a copper (Cu) layer configured sequentially on a substrate; a gate insulation layer on the substrate to cover the gate electrode and the gate line; an active layer arranged on the gate insulation layer in a portion over the gate electrode; an ohmic contact layer on the active layer; a data line on the gate insulation layer, the data line crossing the gate line and defining a pixel region; source and drain electrodes on the ohmic contact layer, the source electrode extending from the data line, and the drain electrode spaced apart from the source electrode; a passivation layer on the gate insulation layer covering the data line and the source and drain electrode, the passivation layer having a drain contact hole exposing a portion of the drain electrode; and a pixel electrode configured on the passivation layer in the pixel region, the pixel electrode electrically contacting the drain electrode through the drain contact hole.
摘要翻译：在本发明中公开了具有用于液晶显示装置的双层金属图案的阵列基板及其制造方法。阵列基板包括栅极电极和栅极线，每个栅极线均具有在基板上顺序配置的钼合金（Mo合金）层和铜（Cu）层; 栅极绝缘层，覆盖栅电极和栅极线; 位于所述栅电极上的部分上的所述栅极绝缘层上的有源层; 有源层上的欧姆接触层; 栅极绝缘层上的数据线，与栅极线交叉并限定像素区域的数据线; 欧姆接触层上的源极和漏极，从数据线延伸的源电极和与源电极间隔开的漏电极; 覆盖数据线和源极和漏极的栅极绝缘层上的钝化层，钝化层具有暴露出漏电极的一部分的漏极接触孔; 以及像素电极，其构造在所述像素区域中的所述钝化层上，所述像素电极通过所述漏极接触孔与所述漏电极电接触。

18. 发明申请

US20060217278A1 Composition and method for removing copper-compatible resist 有权
公开(公告)号：US20060217278A1
公开(公告)日：2006-09-28
申请号：US11415266
申请日：2006-05-02
申请人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
发明人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
IPC分类号： C11D7/32
CPC分类号： C11D3/2068 , C11D1/22 , C11D7/263 , C11D7/34 , C11D11/0047
摘要： A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.

19. 发明申请

US20060192907A1 Method of fabricating array substrate having double-layered patterns 审中-公开
公开(公告)号：US20060192907A1
公开(公告)日：2006-08-31
申请号：US11410815
申请日：2006-04-26
申请人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
发明人： Oh-Nam Kwon , Kyoung-Mook Lee , Nack-Bong Choi
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F1/136227 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L27/12 , H01L27/124
摘要： An array substrate having double-layered metal patterns for use in a liquid crystal display device and a manufacturing method thereof are disclosed in the present invention. The array substrate includes a gate electrode and a gate line each having a molybdenum alloy (Mo-alloy) layer and a copper (Cu) layer configured sequentially on a substrate; a gate insulation layer on the substrate to cover the gate electrode and the gate line; an active layer arranged on the gate insulation layer in a portion over the gate electrode; an ohmic contact layer on the active layer; a data line on the gate insulation layer, the data line crossing the gate line and defining a pixel region; source and drain electrodes on the ohmic contact layer, the source electrode extending from the data line, and the drain electrode spaced apart from the source electrode; a passivation layer on the gate insulation layer covering the data line and the source and drain electrode, the passivation layer having a drain contact hole exposing a portion of the drain electrode; and a pixel electrode configured on the passivation layer in the pixel region, the pixel electrode electrically contacting the drain electrode through the drain contact hole.

20. 发明授权

US07671002B2 Composition and method for removing copper-compatible resist 有权
标题翻译：去除铜兼容抗蚀剂的组成和方法
公开(公告)号：US07671002B2
公开(公告)日：2010-03-02
申请号：US11415266
申请日：2006-05-02
申请人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
发明人： Gyoo-Chul Jo , Gee-Sung Chae , Oh-Nam Kwon , Kyoung-Mook Lee , Yong-Sup Hwang , Seong-Bae Kim , Suk-Chang Jang
IPC分类号： C11D7/32
CPC分类号： C11D3/2068 , C11D1/22 , C11D7/263 , C11D7/34 , C11D11/0047
摘要： A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.
摘要翻译：用于除去铜相容抗蚀剂的组合物包括：约0.1％至约10％重量的烷基苯磺酸化合物; 约10重量％至约99重量％的乙二醇醚化合物; 和约0.5重量％至约5重量％的腐蚀抑制剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式