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11. 发明授权

US07875518B2 Semiconductor device having silicon layer in a gate electrode 有权
标题翻译：在栅电极中具有硅层的半导体器件
公开(公告)号：US07875518B2
公开(公告)日：2011-01-25
申请号：US12453737
申请日：2009-05-20
申请人： Satoru Yamada , Ryo Nagai
发明人： Satoru Yamada , Ryo Nagai
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L21/28061 , H01L21/823842 , H01L29/4941
摘要： A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.
摘要翻译：一种形成半导体器件的方法依次包括在半导体衬底上沉积栅极绝缘膜和硅层，将硼注入到硅层中，通过热处理硅层来扩散硼，将磷注入到硅中层，通过热处理硅层至少扩散至少磷，并通过使用干蚀刻技术图案化硅层。

12. 发明授权

US07598549B2 Semiconductor device having a silicon layer in a gate electrode 失效
标题翻译：在栅电极中具有硅层的半导体器件
公开(公告)号：US07598549B2
公开(公告)日：2009-10-06
申请号：US11299731
申请日：2005-12-13
申请人： Satoru Yamada , Ryo Nagai
发明人： Satoru Yamada , Ryo Nagai
IPC分类号： H01L29/94
CPC分类号： H01L21/28061 , H01L21/823842 , H01L29/4941
摘要： A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A ratio of a maximum boron concentration to a minimum boron concentration in a boron concentration profile across the thickness of the silicon layer is not higher than 100. The CMOS device has a lower NBTI (Negative Bias Temperature Instability) degradation.
摘要翻译： CMOS器件包括硅衬底，栅极绝缘膜和包括掺杂有硼和磷的硅层的栅电极，氮化钨层和钨层。跨越硅层的厚度的硼浓度分布中的最大硼浓度与最小硼浓度的比率不高于100. CMOS器件具有较低的NBTI（负偏压温度不稳定性）劣化。

13. 发明申请

US20060131622A1 Semiconductor device having a silicon layer in a gate electrode 失效
公开(公告)号：US20060131622A1
公开(公告)日：2006-06-22
申请号：US11299731
申请日：2005-12-13
申请人： Satoru Yamada , Ryo Nagai
发明人： Satoru Yamada , Ryo Nagai
IPC分类号： H01L29/76
CPC分类号： H01L21/28061 , H01L21/823842 , H01L29/4941
摘要： A CMOS device includes a silicon substrate, a gate insulating film, and a gate electrode including a silicon layer doped with boron and phosphorous, a tungsten nitride layer and a tungsten layer. A ratio of a maximum boron concentration to a minimum boron concentration in a boron concentration profile across the thickness of the silicon layer is not higher than 100. The CMOS device has a lower NBTI (Negative Bias Temperature Instability) degradation.

14. 发明授权

US06770535B2 Semiconductor integrated circuit device and process for manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06770535B2
公开(公告)日：2004-08-03
申请号：US09767830
申请日：2001-01-24
申请人： Satoru Yamada , Kiyonori Oyu , Shinichiro Kimura
发明人： Satoru Yamada , Kiyonori Oyu , Shinichiro Kimura
IPC分类号： H01L21336
CPC分类号： H01L27/10876 , H01L21/763 , H01L27/10814 , H01L27/10855 , H01L27/10888 , H01L27/10894
摘要： A reduction of the junction electric field intensity is accomplished in the semiconductor regions for the sources and drains of field effects transistors. For this purpose, a structure is provided where the gate electrodes 9 of the MIS.FETQs for memory cell selection of a DRAM are buried within the trenches 7a and 7b created in the semiconductor substrate 1. The bottom corners within the trench 7b are rounded so as to have a radius of curvature in accordance with the sub-threshold coefficient of the MIS.FETQs for memory cell selection. In addition, the gate insulating film 8 within the trench 7b is made to have a laminated structure of a thermal oxide film and a CVD film.
摘要翻译：在场效应晶体管的源极和漏极的半导体区域中实现结电场强度的降低。为此，提供了一种结构，其中用于DRAM的存储单元选择的MIS.FETQ的栅电极9被埋在在半导体衬底1中形成的沟槽7a和7b内。沟槽7b内的底角被倒圆具有根据用于存储器单元选择的MIS.FETQ的子阈值系数的曲率半径。此外，使沟槽7b内的栅极绝缘膜8具有热氧化膜和CVD膜的层叠结构。

15. 发明授权

US08864060B2 Coil component, powder-compacted inductor and winding method for coil component 有权
标题翻译：线圈组件，粉末压电感器和线圈组件的绕组方法
公开(公告)号：US08864060B2
公开(公告)日：2014-10-21
申请号：US13449976
申请日：2012-04-18
申请人： Satoru Yamada , Yoshiyuki Hatayama
发明人： Satoru Yamada , Yoshiyuki Hatayama
IPC分类号： B21H3/04 , B65H18/28 , B65H75/18 , H01F27/28 , H01F27/26 , H01F41/06 , H01F17/04
CPC分类号： H01F27/29 , H01F27/2823 , H01F41/064 , H01F41/071 , H01F2017/048
摘要： A coil component includes an air-core winding wire portion wound by a wire with a plurality of wound layers by alignment winding, a spiral shaped wound portion in which the wire wound in a spiral shape from an inner edge of an end surface toward an outer edge thereof along the end surface while in contact with the end surface on one side in the axis direction of the winding wire portion, a first lead portion extended and extracted outward from a winding first end point of the spiral shaped wound portion, and a second lead portion extended and extracted outward from a winding second end point at the outer circumference of the winding wire portion.
摘要翻译：线圈部件包括由具有通过对准绕组的多个卷绕层的线缠绕的空心绕组线，螺旋形缠绕部分，其中线从端表面的内边缘向外部缠绕成螺旋形状其沿着所述端面与所述绕线部的轴线方向的一侧的端面接触，从所述螺旋状卷绕部的卷绕的第一端部向外延伸并向外伸出的第一引导部，引线部分从卷绕线部分的外周上的绕组第二端点向外延伸和提取。

16. 发明授权

US08385077B2 Electronic device 有权
标题翻译：电子设备
公开(公告)号：US08385077B2
公开(公告)日：2013-02-26
申请号：US12900390
申请日：2010-10-07
申请人： Satoru Yamada
发明人： Satoru Yamada
IPC分类号： H05K1/14 , H05K7/16 , H05K5/00 , H05K7/14
CPC分类号： G11B33/128 , G11B33/122 , G11B33/126
摘要： An electronic device includes a housing having an accommodation space, a first support body being slidably insertable into the accommodation space in parallel with a predetermined plane, a second support body coupled with the first support body rotatably around a rotation axis parallel to a front side of the housing and being rotatable between a reference attitude disposed in the same plane with respect to the first support body and an inclined attitude disposed at a given angle with respect to the first support body, and a drive mechanism for changing the attitude of the second support body.
摘要翻译：电子设备包括具有容纳空间的壳体，与预定平面平行地可滑动地插入到容纳空间中的第一支撑体;与第一支撑体可旋转地围绕平行于预定平面的旋转轴线可旋转地连接的第二支撑体所述壳体能够相对于所述第一支撑体设置在同一平面中的基准姿态和相对于所述第一支撑体以给定角度设置的倾斜姿态之间旋转;以及驱动机构，用于改变所述第二支撑件的姿态身体。

17. 发明授权

US08368169B2 Semiconductor device having a device isolation structure 有权
标题翻译：具有器件隔离结构的半导体器件
公开(公告)号：US08368169B2
公开(公告)日：2013-02-05
申请号：US12897095
申请日：2010-10-04
申请人： Seunguk Han , Satoru Yamada , Young Jin Choi
发明人： Seunguk Han , Satoru Yamada , Young Jin Choi
IPC分类号： H01L21/70
CPC分类号： H01L21/823481 , H01L21/76229 , H01L21/823425
摘要： An example semiconductor device includes a trench formed in a semiconductor substrate to define an active region, a filling dielectric layer provided within the trench, an oxide layer provided between the filling dielectric layer and the trench, a nitride layer provided between the oxide layer and the filling dielectric layer, and a barrier layer provided between the oxide layer and the nitride layer.
摘要翻译：示例性半导体器件包括形成在半导体衬底中以限定有源区的沟槽，设置在沟槽内的填充介电层，设置在填充介电层和沟槽之间的氧化物层，设置在氧化物层和填充介电层，以及设置在氧化物层和氮化物层之间的阻挡层。

18. 发明申请

US20120251171A1 CONDUCTIVE MEMBER 审中-公开
标题翻译：导电会员
公开(公告)号：US20120251171A1
公开(公告)日：2012-10-04
申请号：US13523763
申请日：2012-06-14
申请人： Norifumi Muranaka , Satoru Yamada , Kazuhiro Yamauchi , Seiji Tsuru , Yuka Muranaka
发明人： Norifumi Muranaka , Satoru Yamada , Kazuhiro Yamauchi , Seiji Tsuru , Yuka Muranaka
IPC分类号： G03G21/18 , B32B25/00 , G03G15/00
CPC分类号： G03G15/0233 , B05D3/007 , B32B1/08 , B32B15/06 , B32B15/18 , B32B25/02 , B32B25/14 , B32B2264/104 , B32B2264/108 , B32B2307/202 , B32B2457/00 , G03G15/0818 , G03G15/1685 , Y10T428/31855
摘要： Provided is such a conductive member that a change in its electrical resistance value caused by its long-term use is reduced to the extent possible. The conductive member has a conductive support and a conductive layer, the conductive layer contains a rubber composition formed of a modified epichlorohydrin rubber, and the modified epichlorohydrin rubber has a unit represented by the following formula (1). In the formula (1), R1, R2, and R3 each independently represent hydrogen or a saturated hydrocarbon group having 1 to 18 carbon atoms.
摘要翻译：提供这样的导电构件，其长期使用引起的其电阻值的变化尽可能地减小。导电构件具有导电性支撑体和导电层，导电层含有由改性表氯醇橡胶形成的橡胶组合物，改性表氯醇橡胶具有下述式（1）表示的单元。在式（1）中，R 1，R 2和R 3各自独立地表示氢或碳原子数1〜18的饱和烃基。

19. 发明授权

US08207808B2 Coil component 有权
标题翻译：线圈组件
公开(公告)号：US08207808B2
公开(公告)日：2012-06-26
申请号：US13093299
申请日：2011-04-25
申请人： Satoru Yamada , Yoshiyuki Hatayama
发明人： Satoru Yamada , Yoshiyuki Hatayama
IPC分类号： H01F27/29
CPC分类号： H01F27/29 , H01F17/04 , H01F27/292 , H01F41/10 , H01F2017/048 , Y10T29/49071 , Y10T29/49073
摘要： A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part of the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.
摘要翻译：线圈部件包括由磁性材料形成的芯部，嵌入在芯部中的线圈，从芯部的侧表面突出的线圈的端子部分的一部分，以及从侧面突出的部分并且部分地与线圈的端子部分的突出部分连接。线圈的端子部分的突出部分和平板状端子的突出部分分别沿着芯的侧表面朝着芯的底表面侧弯曲，并且线圈的端子部分的突出和弯曲部分布置在板状端子的突出部分和弯曲部分之间。

20. 发明申请

US20120070188A1 ELECTROCONDUCTIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS 有权
标题翻译：电子元件，工艺盒和电子照相设备
公开(公告)号：US20120070188A1
公开(公告)日：2012-03-22
申请号：US13305262
申请日：2011-11-28
申请人： Yuka Hirakoso , Satoru Yamada , Seiji Tsuru , Kazuhiro Yamauchi , Norifumi Muranaka
发明人： Yuka Hirakoso , Satoru Yamada , Seiji Tsuru , Kazuhiro Yamauchi , Norifumi Muranaka
IPC分类号： G03G21/16 , G03G15/02
CPC分类号： G03G15/0233 , G03G15/0818 , G03G21/1814 , Y10T428/25
摘要： An electroconductive member excellent in durability even when applying direct current voltage over a long period of time is provided. Disclosed is an electroconductive member including an electroconductive mandrel and an electroconductive layer, wherein: the electroconductive layer includes a binder resin and an electroconductive metal oxide particle dispersed in the electroconductive layer; the metal oxide particle has a group represented by the following structural formula (1) on the surface of the metal oxide particle; and the group represented by the following structural formula (1) is introduced by substituting a hydrogen atom of a hydroxyl group as a functional group originating from the metal oxide particle, with the group represented by the following structural formula (1): —R—SO3H
摘要翻译：提供即使在长时间施加直流电压时耐久性优异的导电构件。公开了一种导电构件，其包括导电心轴和导电层，其中：导电层包括分散在导电层中的粘合剂树脂和导电金属氧化物颗粒; 金属氧化物颗粒在金属氧化物颗粒的表面上具有由以下结构式（1）表示的基团; 并且由以下结构式（1）表示的基团代替由羟基作为起始金属氧化物颗粒的官能团的氢原子引入由以下结构式（1）表示的基团：-R- SO3H

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