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11. 发明授权

US07566916B2 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer 有权
标题翻译：使用封装层的GaN器件中的欧姆金属接触和沟道保护
公开(公告)号：US07566916B2
公开(公告)日：2009-07-28
申请号：US10964875
申请日：2004-10-13
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara K. Kurdoghlian
IPC分类号： H01L31/072
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
摘要翻译：说明了在随后的高温处理步骤中制造保护欧姆金属触点和器件通道的半导体器件的方法。封装层用于覆盖通道和欧姆金属触点。本发明提供一种其上沉积有多个半导体层的衬底。半导体层用作器件的通道。半导体层被封装层覆盖。去除封装层和多个半导体层的一部分，其中沉积欧姆金属接触。然后将欧姆金属触点退火以帮助降低其电阻。封装层确保在退火步骤期间欧姆金属接触不迁移，并且该通道不会受退火步骤期间所需的高温的损害。

12. 发明授权

US07247893B2 Non-planar nitride-based heterostructure field effect transistor 有权
标题翻译：非平面氮化物基异质结场效应晶体管
公开(公告)号：US07247893B2
公开(公告)日：2007-07-24
申请号：US10932811
申请日：2004-09-01
申请人： Jeong Sun Moon , Paul Hashimoto , Wah S. Wong , David E. Grider
发明人： Jeong Sun Moon , Paul Hashimoto , Wah S. Wong , David E. Grider
IPC分类号： H01L29/20
CPC分类号： H01L29/66462 , H01L21/28587 , H01L21/30612 , H01L29/2003 , H01L29/7787
摘要： A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.
摘要翻译：公开了使用具有一致的可重复结果的III族氮化物材料制造非平面异质结构场效应晶体管的方法。该方法提供其上沉积至少一层半导体材料的衬底。 AlN层沉积在至少一层半导体材料上。使用溶剂去除一部分AlN层以产生具有一致和可重复结果的非平面区域。 AlN层下面的至少一层不溶于溶剂，因此用作蚀刻停止层，防止对AlN层下面的至少一层的任何损坏。此外，如果AlN层由于反应离子蚀刻而导致任何表面损伤，则当暴露于溶剂以形成非平面区域时，损伤将被去除。

13. 发明申请

US20050194602A1 Method for fabricating a non-planar nitride-based heterostructure field effect transistor 有权
标题翻译：用于制造非平面氮化物基异质结场效应晶体管的方法
公开(公告)号：US20050194602A1
公开(公告)日：2005-09-08
申请号：US10932811
申请日：2004-09-01
申请人： Jeong Moon , Paul Hashimoto , Wah Wong , David Grider
发明人： Jeong Moon , Paul Hashimoto , Wah Wong , David Grider
IPC分类号： H01L21/285 , H01L21/306 , H01L21/335 , H01L29/20 , H01L29/778 , H01L29/22
CPC分类号： H01L29/66462 , H01L21/28587 , H01L21/30612 , H01L29/2003 , H01L29/7787
摘要： A method for fabricating a non-planar heterostructure field effect transistor using group III-nitride materials with consistent repeatable results is disclosed. The method provides a substrate on which at least one layer of semiconductor material is deposited. An AlN layer is deposited on the at least one layer of semiconductor material. A portion of the AlN layer is removed using a solvent to create a non-planar region with consistent and repeatable results. The at least one layer beneath the AlN layer is insoluble in the solvent and therefore acts as an etch stop, preventing any damage to the at least one layer beneath the AlN layer. Furthermore, should the AlN layer incur any surface damage as a result of the reactive ion etching, the damage will be removed when exposed to the solvent to create the non-planar region.
摘要翻译：公开了使用具有一致的可重复结果的III族氮化物材料制造非平面异质结构场效应晶体管的方法。该方法提供其上沉积至少一层半导体材料的衬底。 AlN层沉积在至少一层半导体材料上。使用溶剂去除一部分AlN层以产生具有一致和可重复结果的非平面区域。 AlN层下面的至少一层不溶于溶剂，因此用作蚀刻停止层，防止对AlN层下面的至少一层的任何损坏。此外，如果AlN层由于反应离子蚀刻而导致任何表面损伤，则当暴露于溶剂以形成非平面区域时，损伤将被去除。

14. 发明申请

US20050048747A1 Ohmic metal contact and channel protection in GaN devices using an encapsulation layer 有权
公开(公告)号：US20050048747A1
公开(公告)日：2005-03-03
申请号：US10964875
申请日：2004-10-13
申请人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara Kurdoghlian
发明人： Tahir Hussain , Miroslav Micovic , Paul Hashimoto , Gary Peng , Ara Kurdoghlian
IPC分类号： H01L21/24 , H01L21/285 , H01L21/335 , H01L21/337 , H01L29/20 , H01L29/45 , H01L21/28
CPC分类号： H01L29/66462 , H01L21/24 , H01L21/242 , H01L21/28587 , H01L29/2003 , H01L29/452 , H01L29/66924
摘要： A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.

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