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11. 发明申请

US20090008363A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090008363A1
公开(公告)日：2009-01-08
申请号：US12230565
申请日：2008-09-02
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： C23F1/02
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

12. 发明授权

US5291145A Microwave processing equipment 失效
标题翻译：微波加工设备
公开(公告)号：US5291145A
公开(公告)日：1994-03-01
申请号：US851628
申请日：1992-03-16
申请人： Yusuke Yajima , Ken'etsu Yokogawa
发明人： Yusuke Yajima , Ken'etsu Yokogawa
IPC分类号： H01P1/00 , H01S1/02
CPC分类号： H01S1/02
摘要： Novel microwave processing equipment includes a silicon single crystal containing neutral {110} planar four vacancies, a cooling mechanism for holding the silicon single crystal to a low temperature, a light pumping mechanism for irradiating light to the silicon single crystal, a magnetic field applying device for applying a static magnetic field to the silicon single crystal, an orientation holding mechanism for holding the silicon single crystal to a specific orientation with respect to the static magnetic field, an electromagnetic wave inputting mechanism for supplying an input electromagnetic wave to the silicon single crystal, and an electromagnetic wave outputting mechanism for extracting an output electromagnetic wave from the silicon single crystal. The input electromagnetic wave supplied in the silicon single crystal by the electromagnetic wave inputting mechanism is amplified by the stimulated emission produced in the silicon single crystal and passes through the electromagnetic wave outputting mechanism to be outputted to the outside. A microwave amplifier with narrow band width capable of amplifying the electromagnetic wave in the microwave range with low noise is thus obtained.
摘要翻译：新型微波加工设备包括含有中性（110）平面四个空位的硅单晶，用于将硅单晶保持在低温的冷却机构，用于向硅单晶照射光的光泵机构，磁场施加装置用于向硅单晶施加静磁场的方法，用于将硅单晶保持在相对于静磁场的特定取向的取向保持机构，用于向硅单晶提供输入电磁波的电磁波输入机构以及用于从硅单晶中提取输出电磁波的电磁波输出机构。通过电磁波输入机构在硅单晶中提供的输入电磁波被硅单晶中产生的受激发射放大，并通过电磁波输出机构输出到外部。从而获得具有窄带宽的微波放大器，其能够以低噪声放大微波范围内的电磁波。

13. 发明授权

US09271341B2 Heat treatment apparatus that performs defect repair annealing 有权
标题翻译：进行缺陷修复退火的热处理装置
公开(公告)号：US09271341B2
公开(公告)日：2016-02-23
申请号：US12955020
申请日：2010-11-29
申请人： Ken'etsu Yokogawa , Masatoshi Miyake
发明人： Ken'etsu Yokogawa , Masatoshi Miyake
IPC分类号： H05B7/18 , H05B1/02
CPC分类号： H05B7/18
摘要： Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
摘要翻译：提供一种热处理装置，即使在高温退火SiC的情况下，也能够发挥低的热容量并进行均匀的加热。热处理装置包括：一对平行板电极，对该平行板电极施加高频电压以在一对平行板电极之间放电的高频电源;测量设置在一对平行板电极中的待加热样品的温度，将气体引入到一对平行板电极中的气体引入单元，围绕该对平行板电极的反射镜，以及控制单元，控制高频电源的输出。使用由一对平行板电极之间的放电引起的气体的加热来热处理待加热的样品。

14. 发明授权

US07838792B2 Plasma processing apparatus capable of adjusting temperature of sample stand 有权
标题翻译：能够调节样品台温度的等离子体处理装置
公开(公告)号：US07838792B2
公开(公告)日：2010-11-23
申请号：US11512118
申请日：2006-08-30
申请人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
IPC分类号： B23K9/02 , H05H1/24
CPC分类号： H01L21/67248 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
摘要翻译：提供一种等离子体处理装置，其通过使用在处理室中形成的等离子体处理在真空容器中布置在处理室中的样品台上保持的样品。等离子体处理装置包括：布置在样品台中的通道，其中供应冷却剂并在其流动时蒸发; 具有样品台，压缩机，冷凝器和膨胀阀的制冷循环，其顺序连接并使冷却剂在其中循环; 冷却剂通道使已经通过膨胀阀的冷却剂分支，然后与从样品台中的路径朝向压缩机返回的冷却剂合流; 以及调节器，用于调节通过样品台中的路径并在制冷循环中循环的冷却剂的量以及分配并流过冷却剂通道的冷却剂量。

15. 发明授权

US07048869B2 Plasma processing apparatus and a plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07048869B2
公开(公告)日：2006-05-23
申请号：US09414520
申请日：1999-10-08
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H05H1/26
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, F is necessary, and there is a problem in that the etching characteristic fluctuates with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF，F的适当比例的等离子体，并且存在的问题在于，蚀刻特性随着蚀刻室的温度波动而波动。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将侧壁的温度保持在10℃和120℃，可以获得稳定的蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

16. 发明申请

US20130277354A1 METHOD AND APPARATUS FOR PLASMA HEAT TREATMENT 审中-公开
标题翻译：等离子体热处理的方法和装置
公开(公告)号：US20130277354A1
公开(公告)日：2013-10-24
申请号：US13571730
申请日：2012-08-10
申请人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
发明人： Masatoshi Miyake , Ken'etsu Yokogawa , Takashi Uemura , Masaru Izawa , Satoshi Sakai
IPC分类号： H05H1/48
CPC分类号： H01J37/32522 , H01J37/32724
摘要： There is provided a method for plasma heat treatment that can suppress the degradation of thermal efficiency even in the case where plasma is used to heat a sample at a temperature of 1,200° C. or more. In a method for plasma heat treatment that a sample to be processed is heated by plasma, the method including the steps of: preheating in which a heat treatment chamber is exhausted while preheating an upper electrode and a lower electrode using plasma generated between the upper electrode and the lower electrode; and heat treatment in which the sample to be processed is heated after the preheating step. The upper electrode and the lower electrode are electrodes containing carbon.
摘要翻译：提供了即使在1200℃以上的温度下使用等离子体加热试样的情况下也能够抑制热效率降低的等离子体热处理方法。在等离子体热处理的方法中，待加工的样品被等离子体加热，所述方法包括以下步骤：使用在上电极和下电极之间产生的等离子体预热上热电极和下电极的热处理室被排出的预热和下电极; 以及在预热步骤之后加热被处理样品的热处理。上电极和下电极是含有碳的电极。

17. 发明申请

US20120055915A1 HEAT TREATMENT APPARATUS 有权
标题翻译：热处理设备
公开(公告)号：US20120055915A1
公开(公告)日：2012-03-08
申请号：US12955020
申请日：2010-11-29
申请人： Ken'etsu Yokogawa , Masatoshi Miyake
发明人： Ken'etsu Yokogawa , Masatoshi Miyake
IPC分类号： H05B7/18 , H05B1/02
CPC分类号： H05B7/18
摘要： Provided is a heat treatment apparatus that even when annealing SiC at high temperature, can exhibit a low heat capacity and perform uniform heating. The heat treatment apparatus includes a pair of parallel plate electrodes, high-frequency power supply that applies a high-frequency voltage to the pair of parallel plate electrodes so as to discharge between the pair of parallel plate electrodes, a temperature measurement instrument that measures the temperature of a sample to be heated which is disposed in the pair of parallel plate electrodes, a gas introduction unit that introduces a gas to the pair of parallel plate electrodes, reflection mirrors that surround the pair of parallel plate electrodes, and a control unit that controls the output of the high-frequency power supply. Heating of a gas due to discharge between the pair of parallel plate electrodes is used to thermally treat the sample to be heated.
摘要翻译：提供一种热处理装置，即使在高温退火SiC的情况下，也能够发挥低的热容量并进行均匀的加热。热处理装置包括：一对平行板电极，对该平行板电极施加高频电压以在一对平行板电极之间放电的高频电源;测量设置在一对平行板电极中的待加热样品的温度，将气体引入到一对平行板电极中的气体引入单元，围绕该对平行板电极的反射镜，以及控制单元，控制高频电源的输出。使用由一对平行板电极之间的放电引起的气体的加热来热处理待加热的样品。

18. 发明授权

US08034181B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US08034181B2
公开(公告)日：2011-10-11
申请号：US11679979
申请日：2007-02-28
申请人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要翻译：等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

19. 发明申请

US20080203925A1 PLASMA PROCESSING APPARATUS 失效
标题翻译：等离子体加工设备
公开(公告)号：US20080203925A1
公开(公告)日：2008-08-28
申请号：US11679979
申请日：2007-02-28
申请人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
发明人： Takumi Tandou , Ken'etsu Yokogawa , Masaru Izawa
IPC分类号： H05H1/00
CPC分类号： H01J37/32431 , H01J2237/2001 , H01L21/67109
摘要： A plasma processing apparatus includes a processing chamber encased in a vacuum vessel equipped with an evacuator; a sample stage located in the processing chamber and having an upper surface on which a sample as an object to be processed rests; a gas feeding unit for feeding processing gas into the processing chamber; a plurality of refrigerant ducts which are laid out in the internal of the sample stage and through which liquid refrigerant flows and can be evaporated; a cooling circuit including a compressor, a condenser, an expansion valve and a set of pipelines to connect the compressor, the condenser and the expansion valve in this order; and a selecting unit for selectively feeding the refrigerant through the plural refrigerant ducts in the different steps of the processing. The sample is processed by using plasma while the temperature of the sample stage is being controlled by the cooling circuit.
摘要翻译：等离子体处理装置包括：装在真空容器中的处理室，该真空容器装备有排气装置; 位于所述处理室中并具有上表面的样品台，作为待处理物体的样品在该上表面上; 用于将处理气体供给到处理室中的气体供给单元; 多个制冷剂管道，其布置在样品台的内部，并且液体制冷剂通过该制冷剂流动并且可以蒸发; 包括压缩机，冷凝器，膨胀阀和一组管道的冷却回路，以按顺序连接压缩机，冷凝器和膨胀阀; 以及选择单元，用于在处理的不同步骤中选择性地将制冷剂供给到多个制冷剂管道中。通过使用等离子体处理样品，同时样品台的温度由冷却回路控制。

20. 发明授权

US06551445B1 Plasma processing system and method for manufacturing a semiconductor device by using the same 失效
标题翻译：等离子体处理系统及其制造方法
公开(公告)号：US06551445B1
公开(公告)日：2003-04-22
申请号：US09665045
申请日：2000-09-19
申请人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
发明人： Ken'etsu Yokogawa , Yoshinori Momonoi , Nobuyuki Negishi , Masaru Izawa , Shinichi Tachi
IPC分类号： H05H100
CPC分类号： H01J37/32623 , H01J37/32678
摘要： A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要翻译：平行板ECR等离子体处理系统能够延长能够保持连续，均匀状态的等离子体密度区域。在该系统中，设置由螺线管线圈和第二磁场形成装置形成的第一磁场形成装置，使得平面板表面上的磁通线的方向分布由来自第一和第二磁场形成装置的组合磁场由此控制磁场与电磁波的相互作用程度的分布。该控制确保在高密度等离子体形成条件下的等离子体的均匀性，从而使得能够在宽范围的低至高密度下形成连续的等离子体。因此，可以实现等离子体处理系统，其确保在宽等离子体条件下的处理，包括在高密度条件下的高速处理。

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