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    • 11. 发明授权
    • Power transducer
    • 功率传感器
    • US08531140B2
    • 2013-09-10
    • US13747574
    • 2013-01-23
    • Satoshi IboriYoshihiro UchinoHiroshi WatanabeMasahiro Hiraga
    • Satoshi IboriYoshihiro UchinoHiroshi WatanabeMasahiro Hiraga
    • H02P3/00
    • H02P3/22H02M1/32H02M5/458H02P3/14
    • The performance of a power transducer is improved while efficiently using a power semiconductor also by managing the permissible duty factor of the power semiconductor in the regenerative braking circuit provided in the power transducer. The user is allowed to set, through an operation panel provided on the power transducer, the resistance value of the regenerative braking resistor for thermally consuming the rotational energy generated during motor deceleration. The power transducer performs the steps of: calculating the current which flows in the regenerative braking circuit from the resistance value setting; obtaining the generation loss of the power semiconductor in the regenerative braking circuit with the calculated current value; and determining the permissible duty factor of the power semiconductor from the obtained generation loss.
    • 功率传感器的性能得到改善,同时通过管理设置在功率传感器中的再生制动电路中的功率半导体的允许占空比来有效地使用功率半导体。 允许用户通过设置在功率传感器上的操作面板设置再生制动电阻器的电阻值,用于热消耗电动机减速期间产生的旋转能量。 功率传感器执行以下步骤:从电阻值设定计算在再生制动电路中流动的电流; 以所计算的电流值获得再生制动电路中的功率半导体的发电损失; 以及从所获得的发电损失确定功率半导体的允许占空比。
    • 13. 发明授权
    • Radio communication apparatus and method for making radio communication apparatus
    • 无线通信装置及无线通信装置的制造方法
    • US08400362B2
    • 2013-03-19
    • US12546037
    • 2009-08-24
    • Hiroshi Watanabe
    • Hiroshi Watanabe
    • H01Q1/24
    • H01Q1/243H01Q7/00H01Q9/30H01Q9/40H01Q21/28Y10T29/49016
    • A radio communication apparatus configured to be used for first radio communication and second radio communication which are different from each other is provided. The radio communication apparatus has a first antenna, a coupling reduction element, a magnetic material sheet and a second antenna. The first antenna is configured to be used for the first radio communication, and is formed by a conductive line wound in a plane like a coil. The coupling reduction element is formed by a plane-shaped conductor, provided almost parallel to the plane of the first antenna, and configured to be put in a condition of electrical floating. The magnetic material sheet is provided between the first antenna and the coupling reduction element. The second antenna is configured to be used for the second radio communication, and is provided close to at least a portion of the first antenna.
    • 提供了一种被配置为用于彼此不同的第一无线电通信和第二无线电通信的无线电通信装置。 无线电通信装置具有第一天线,耦合减小元件,磁性材料片和第二天线。 第一天线被配置为用于第一无线电通信,并且由缠绕在类似线圈的平面中的导线形成。 联接减速元件由平面形状的导体形成,该平面形状的导体几乎平行于第一天线的平面,并被构造成处于电浮动状态。 磁性材料板设置在第一天线和耦合减速元件之间。 第二天线被配置为用于第二无线电通信,并且被设置在第一天线的至少一部分附近。
    • 14. 发明授权
    • Method for manufacturing silicon carbide semiconductor device
    • 碳化硅半导体器件的制造方法
    • US08367536B2
    • 2013-02-05
    • US13319739
    • 2010-07-16
    • Hiroshi WatanabeNaruhisa Miura
    • Hiroshi WatanabeNaruhisa Miura
    • H01L21/3205H01L21/4763
    • H01L29/7802H01L29/0696H01L29/1608H01L29/66068
    • The present invention includes steps below: (a) forming, on a drift layer, a first ion implantation mask and a second ion implantation mask individually by photolithography to form a third ion implantation mask, the first ion implantation mask having a mask region corresponding to a channel region and having a first opening corresponding to a source region, the second ion implantation mask being positioned in contact with an outer edge of the first ion implantation mask and configured to form a base region; (b) implanting impurities of a first conductivity type from the first opening with an ion beam using the third ion implantation mask to form a source region in an upper layer part of the silicon carbide drift layer; (c) removing the first ion implantation mask after the formation of the source region; and (d) implanting impurities of a second conductivity type with an ion beam from a second opening formed in the second ion implantation mask after the removal of the first ion implantation mask to form a base region deeper than the source region in the upper layer part of the drift layer.
    • 本发明包括以下步骤:(a)通过光刻法分别在漂移层上形成第一离子注入掩模和第二离子注入掩模,以形成第三离子注入掩模,第一离子注入掩模具有对应于 沟道区,具有对应于源极区的第一开口,所述第二离子注入掩模定位成与所述第一离子注入掩模的外边缘接触并且被配置为形成基区; (b)使用第三离子注入掩模,用离子束从第一开口注入第一导电类型的杂质,以在碳化硅漂移层的上层部分中形成源极区; (c)在形成源极区域之后去除第一离子注入掩模; 以及(d)在除去第一离子注入掩模之后,从形成在第二离子注入掩模中的第二开口用离子束注入第二导电类型的杂质以形成比上层部分中的源极区更深的基极区 的漂移层。
    • 20. 发明授权
    • Nonvolatile semiconductor memory
    • 非易失性半导体存储器
    • US08227852B2
    • 2012-07-24
    • US11839156
    • 2007-08-15
    • Hiroshi Watanabe
    • Hiroshi Watanabe
    • H01L29/788
    • H01L29/4925H01L21/28273H01L27/115H01L29/42324
    • A nonvolatile semiconductor memory includes a memory cell including, a semiconductor substrate, a first insulating layer on the semiconductor substrate, a floating gate on the first insulating layer, a second insulating layer on the floating gate, and a control gate electrode on the second insulating layer, wherein the floating gate is comprised a first conductive layer which is contact with the first insulating layer, a second conductive layer which is contact with the second insulating layer, and a semiconductor layer between the first and second conductive layers, and each of the first and second conductive layer is a metal layer or a silicide layer.
    • 非易失性半导体存储器包括:存储单元,包括半导体衬底,半导体衬底上的第一绝缘层,第一绝缘层上的浮置栅极,浮置栅极上的第二绝缘层,以及位于第二绝缘层上的控制栅电极 层,其中所述浮栅包括与所述第一绝缘层接触的第一导电层,与所述第二绝缘层接触的第二导电层,以及所述第一和第二导电层之间的半导体层, 第一和第二导电层是金属层或硅化物层。