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11. 发明授权

US06342404B1 Group III nitride compound semiconductor device and method for producing 有权
标题翻译： III族氮化物化合物半导体器件及其制造方法
公开(公告)号：US06342404B1
公开(公告)日：2002-01-29
申请号：US09522833
申请日：2000-03-10
申请人： Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
发明人： Naoki Shibata , Jun Ito , Toshiaki Chiyo , Shizuyo Asami , Hiroshi Watanabe , Shinya Asami
IPC分类号： H01L2100
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639
摘要： A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.
摘要翻译：根据以下方式制造III族氮化物化合物半导体器件。在衬底上形成由防止III族氮化物半导体生长的材料制成的分离层。 III族氮化物化合物半导体生长在未分离层的衬底的表面上，同时保持未被覆盖的衬底表面被分离层分离。

12. 发明授权

US06830949B2 Method for producing group-III nitride compound semiconductor device 有权
标题翻译： III族氮化物半导体器件的制造方法
公开(公告)号：US06830949B2
公开(公告)日：2004-12-14
申请号：US10258128
申请日：2002-10-21
申请人： Masanobu Senda , Jun Ito , Toshiaki Chiyo , Naoki Shibata , Shizuyo Asami
发明人： Masanobu Senda , Jun Ito , Toshiaki Chiyo , Naoki Shibata , Shizuyo Asami
IPC分类号： H01L2100
CPC分类号： C30B23/02 , C23C14/0036 , C23C14/0617 , C30B29/403 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L33/0062
摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.
摘要翻译：提出了通过溅射法在基板上形成III族氮化物化合物半导体层的优选条件。当通过溅射法在基板上形成第一III族氮化物化合物半导体层时，溅射装置的初始电压被选择为不高于溅射电压的110％。

13. 发明授权

US06875629B2 III group nitride based semiconductor element and method for manufacture thereof 失效
标题翻译： III族氮化物类半导体元件及其制造方法
公开(公告)号：US06875629B2
公开(公告)日：2005-04-05
申请号：US10479590
申请日：2002-06-03
申请人： Masanobu Senda , Naoki Shibata , Jun Ito , Toshiaki Chiyo
发明人： Masanobu Senda , Naoki Shibata , Jun Ito , Toshiaki Chiyo
IPC分类号： C23C4/02 , C23C4/18 , H01L21/20 , H01L29/20 , H01L33/32 , H01L21/00
CPC分类号： C30B25/18 , C23C4/02 , C23C4/18 , C30B29/403 , H01L21/0242 , H01L21/02425 , H01L21/02458 , H01L21/02472 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L21/02658 , H01L29/2003 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S257/918
摘要： A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.
摘要翻译：在蓝宝石等的辅助基板上形成有Ti的隔离层。在隔离层上形成TiN的底涂层。提供底涂层，使得能够在底涂层上生长具有良好结晶性的III族氮化物化合物半导体层。将TiN喷涂在底涂层上以形成热喷涂沉积层。然后，隔离层被化学蚀刻以露出底涂层。然后，在底涂层的表面上生长III族氮化物化合物半导体层。

14. 发明授权

US07128846B2 Process for producing group III nitride compound semiconductor 有权
标题翻译：制备III族氮化物化合物半导体的方法
公开(公告)号：US07128846B2
公开(公告)日：2006-10-31
申请号：US10505948
申请日：2003-02-24
申请人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
发明人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
IPC分类号： C23F1/00 , C30B29/38
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.
摘要翻译：一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

15. 发明申请

US20050118825A1 Process for producing group III nitride compound semiconductor 有权
标题翻译：制备III族氮化物化合物半导体的方法
公开(公告)号：US20050118825A1
公开(公告)日：2005-06-02
申请号：US10505948
申请日：2003-02-24
申请人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
发明人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01L21/311
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.
摘要翻译：一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

16. 发明授权

US06335217B1 GaN type semiconductor device fabrication 失效
标题翻译： GaN型半导体器件制造
公开(公告)号：US06335217B1
公开(公告)日：2002-01-01
申请号：US09525425
申请日：2000-03-14
申请人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
发明人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
IPC分类号： H01L2100
CPC分类号： H01L33/12 , H01L33/007 , H01L33/0075 , H01L33/10 , H01L33/405 , H01L33/46
摘要： A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
摘要翻译：提供具有结构的GaN型半导体层，其具有与GaN类半导体层相对的表面的由Ti构成的衬底。

17. 发明授权

US06589808B2 GaN type semiconductor device 失效
公开(公告)号：US06589808B2
公开(公告)日：2003-07-08
申请号：US09972898
申请日：2001-10-10
申请人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
发明人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
IPC分类号： H01L2100
CPC分类号： H01L33/12 , H01L33/007 , H01L33/0075 , H01L33/10 , H01L33/405 , H01L33/46
摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

18. 发明授权

US6100545A GaN type semiconductor device 失效
公开(公告)号：US6100545A
公开(公告)日：2000-08-08
申请号：US170128
申请日：1998-10-13
申请人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
发明人： Toshiaki Chiyo , Shizuyo Noiri , Naoki Shibata , Jun Ito
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/0075 , H01L33/46
摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

19. 发明授权

US07312472B2 Compound semiconductor element based on Group III element nitride 有权
标题翻译：基于III族元素氮化物的复合半导体元件
公开(公告)号：US07312472B2
公开(公告)日：2007-12-25
申请号：US10466185
申请日：2002-01-10
申请人： Toshiaki Chiyo , Jun Ito , Naoki Shibata
发明人： Toshiaki Chiyo , Jun Ito , Naoki Shibata
IPC分类号： H01L27/15
CPC分类号： H01L33/0079 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/02491 , H01L21/02505 , H01L21/0254 , H01L33/007
摘要： In the present invention, (Ti1−xAx)N [in which A is at least one kind of metal selected from the group consisting of Al, Ga, and In] is used as a metal nitride layer, so that a Group III nitride compound semiconductor layer is formed on the metal nitride layer. When a Ti layer is formed between the metal nitride layer having a sufficient thickness and a substrate and the titanium layer is removed, a Group III nitride compound semiconductor device using metal nitride as a substrate can be obtained.
摘要翻译：在本发明中，（Ti 1-x A x N）N [其中A是选自Al，Ga和Al中的至少一种金属 In]用作金属氮化物层，从而在金属氮化物层上形成III族氮化物化合物半导体层。当在具有足够厚度的金属氮化物层和衬底之间形成Ti层并除去钛层时，可以获得使用金属氮化物作为衬底的III族氮化物半导体器件。

20. 发明授权

US07029939B2 P-type semiconductor manufacturing method and semiconductor device 失效
标题翻译： P型半导体制造方法和半导体装置
公开(公告)号：US07029939B2
公开(公告)日：2006-04-18
申请号：US10481057
申请日：2002-06-17
申请人： Toshiaki Chiyo , Naoki Shibata
发明人： Toshiaki Chiyo , Naoki Shibata
IPC分类号： H01L21/22 , H01L21/324
CPC分类号： H01L33/0095 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/32 , H01L33/42
摘要： A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.
摘要翻译：通过MOVPE处理在蓝宝石衬底1上形成包含III族氮化物化合物半导体的材料的p-GaN层5，在其上形成由Co / Au构成的第一金属层6。然后在使用等离子体的平面电子束照射装置中，电子束通过第一金属层6照射到p-GaN层5。因此，第一金属层6防止p-GaN层5的表面被损坏，并且可以降低p-GaN层5的电阻率。接着，在第一金属层6上形成第二金属（Ni）层10。并且通过使用氟酸硝酸将第一金属层6蚀刻通过第二金属层10。结果，第一金属层几乎被完全去除。然后在其上形成由Co / Au制成的透光p电极7。结果，可以获得具有降低的接触电阻和较低驱动电压的p型半导体，并且p型半导体的光透射率提高。

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