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11. 发明授权

US5786621A Microelectromechanical integrated microloading device 失效
标题翻译：微机电一体化微加载装置
公开(公告)号：US5786621A
公开(公告)日：1998-07-28
申请号：US670725
申请日：1996-06-21
申请人： Muhammed T. A. Saif , Noel C. MacDonald
发明人： Muhammed T. A. Saif , Noel C. MacDonald
IPC分类号： B81C99/00 , H01L29/82 , H01L23/58
CPC分类号： B81C99/004 , B81C99/005
摘要： A novel apparatus and technique or characterizing materials at submicron scale and for characterizing micromechanical devices integrates test specimens with the testing device. The test specimen is a micromechanical structure made of the material to be characterized or may be a device under evaluation. A microloading instrument is a microelectromechanical structure incorporating a stable, planar frame to which is connected a multiplicity of comb-type capacitive actuators. A variable drive voltage applied across the actuator plates selectively moves the frame structure along a longitudinal axis in a controlled fashion. The frame is mounted to a fixed substrate by means of laterally extending spring arms which position the capacitor plates and guide the motion of the frame along the longitudinal axis. The micro loading instrument is calibrated by buckling a long slender beam cofabricated with the instrument. The instrument's small size and vacuum compatibility allow material testing in macroscopic analytical devices, such as TEM to study in-situ the micro-structural changes of the test specimens. The small size of the system allow material testing in chambers with various environment conditions. The single crystal core of each beam has a high aspect ratio with the dielectric and metal layers overhanging the bottom edge of the core by an amount to balance the stresses and strains within the structure to maintain planarity of the beams and thus of the microloading instrument.
摘要翻译：一种新颖的装置和技术或亚微米尺度的特征材料，并用于表征微机械装置，将试样与试验装置相结合。试样是由要表征的材料制成的微机械结构，或者可以是被评估的装置。微加载仪器是结合有稳定的平面框架的微机电结构，其连接有多个梳状电容式致动器。施加在致动器板上的可变驱动电压以可控的方式选择性地沿着纵向轴线移动框架结构。框架通过横向延伸的弹簧臂安装到固定的基板上，定位电容器板并引导框架沿着纵向轴线的运动。微加载仪器通过弯曲与仪器共同构成的长细长梁进行校准。该仪器的小尺寸和真空兼容性允许在宏观分析装置（如TEM）中进行材料测试，原位研究试样的微观结构变化。系统的小尺寸允许在具有各种环境条件的室内进行材料测试。每个光束的单晶核心具有高的纵横比，其中电介质层和金属层悬垂在芯的底部边缘上，以平衡结构内的应力和应变，以保持光束的平坦度，从而保持微载物的平面度。

12. 发明授权

US5198390A RIE process for fabricating submicron, silicon electromechanical structures 失效
标题翻译：用于制造亚微米，硅机电结构的RIE工艺
公开(公告)号：US5198390A
公开(公告)日：1993-03-30
申请号：US821944
申请日：1992-01-16
申请人： Noel C. MacDonald , Zuoying L. Zhang
发明人： Noel C. MacDonald , Zuoying L. Zhang
IPC分类号： B81B3/00 , B81C1/00 , H01H1/00 , H01L21/3065 , H01L21/308
CPC分类号： B81C1/0015 , B81C1/00619 , H01H1/0036 , H01L21/3065 , H01L21/3081 , B81C2201/0132 , B81C2201/053 , Y10S148/05 , Y10S148/051
摘要： A reactive ion etching process is used for the fabrication of submicron, single crystal silicon, movable mechanical structures and capacitive actuators. The reactive ion etching process gives excellent control of lateral dimensions while maintaining a large vertical depth in the formation of high aspect-ratio freely suspended single crystal silicon structures. The silicon etch process is independent of crystal orientation and produces controllable vertical profiles.
摘要翻译：反应离子蚀刻工艺用于制造亚微米，单晶硅，可移动机械结构和电容式致动器。在形成高纵横比自由悬浮的单晶硅结构时，反应离子蚀刻工艺提供了横向尺寸的优异控制，同时保持了较大的垂直深度。硅蚀刻工艺独立于晶体取向并产生可控垂直分布。

13. 发明授权

US09688533B2 Using millisecond pulsed laser welding in MEMS packaging 有权
公开(公告)号：US09688533B2
公开(公告)日：2017-06-27
申请号：US13982427
申请日：2012-01-31
申请人： Payam Bozorgi , Noel C. MacDonald
发明人： Payam Bozorgi , Noel C. MacDonald
IPC分类号： H05K7/00 , B81C3/00 , B81C1/00 , H01L21/50 , H01L23/10 , B23K26/20 , B23K26/24 , H05K1/18 , B23K26/32 , B23K26/0622 , H01L23/00 , B23K103/14
CPC分类号： B81C3/001 , B23K26/0622 , B23K26/206 , B23K26/24 , B23K26/32 , B23K2103/14 , B81C1/00269 , B81C2203/0118 , B81C2203/038 , H01L21/50 , H01L23/10 , H01L24/97 , H01L2924/01019 , H01L2924/01065 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/16315 , H05K1/18 , H01L2924/00
摘要： A new packaging method for a wide range of MEMS for application on both the wafer and device scale. Titanium is used as the packaging material and both silicon and titanium MEMS devices are integrated on to a titanium substrate. A Nd:YAG pulsed laser is used to micro-weld the titanium cap to the substrate. A three-dimensional time dependent model of heat flow during laser beam welding is presented. The heat transfer and parametric design capabilities of COMSOL were employed for this purpose. Model calculations are compared and calibrated with experimental results of pulsed laser welds. The functionality and hermiticity of the proposed packaging was evaluated by packaging a self actuated Veeco Instrument AFM cantilever tip. The experimental measurements show that the resonance frequency and quality factor of the device stay the same before and after packaging and the applied technique has no effect on the device.

14. 发明申请

US20140126167A1 USING MILLISECOND PULSED LASER WELDING IN MEMS PACKAGING 有权
标题翻译：在MEMS包装中使用MILLISECOND脉冲激光焊接
公开(公告)号：US20140126167A1
公开(公告)日：2014-05-08
申请号：US13982427
申请日：2012-01-31
申请人： Payam Bozorgi , Noel C. MacDonald
发明人： Payam Bozorgi , Noel C. MacDonald
IPC分类号： B81C3/00 , H05K1/18 , B23K26/24
CPC分类号： B81C3/001 , B23K26/0622 , B23K26/206 , B23K26/24 , B23K26/32 , B23K2103/14 , B81C1/00269 , B81C2203/0118 , B81C2203/038 , H01L21/50 , H01L23/10 , H01L24/97 , H01L2924/01019 , H01L2924/01065 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/1461 , H01L2924/16315 , H05K1/18 , H01L2924/00
摘要： A new packaging method for a wide range of MEMS for application on both the wafer and device scale. Titanium is used as the packaging material and both silicon and titanium MEMS devices are integrated on to a titanium substrate. A Nd:YAG pulsed laser is used to micro-weld the titanium cap to the substrate. A three-dimensional time dependent model of heat flow during laser beam welding is presented. The heat transfer and parametric design capabilities of COMSOL were employed for this purpose. Model calculations are compared and calibrated with experimental results of pulsed laser welds. The functionality and hermiticity of the proposed packaging was evaluated by packaging a self actuated Veeco Instrument AFM cantilever tip. The experimental measurements show that the resonance frequency and quality factor of the device stay the same before and after packaging and the applied technique has no effect on the device.
摘要翻译：一种适用于晶圆和器件规模应用的广泛MEMS的新型封装方法。钛用作包装材料，硅和钛MEMS器件都集成在钛基板上。使用Nd：YAG脉冲激光将钛盖微焊接到基板上。提出了激光束焊接过程中热流三维时间依赖模型。为此，采用COMSOL的传热和参数设计能力。模型计算与脉冲激光焊接的实验结果进行比较和校准。通过包装自动驱动的Veeco仪器AFM悬臂尖端来评估所提出的包装的功能和隐性。实验测量结果表明，器件的共振频率和品质因数在包装前后保持不变，应用技术对设备无影响。

15. 发明申请

US20110120674A1 TITANIUM-BASED THERMAL GROUND PLANE 有权
标题翻译：基于TITANIUM的热地平面
公开(公告)号：US20110120674A1
公开(公告)日：2011-05-26
申请号：US13055111
申请日：2009-07-21
申请人： Noel C. MacDonald , Carl D. Meinhart , Changsong Ding , Payam Bozorgi , Gaurav Soni , Brian D. Piorek
发明人： Noel C. MacDonald , Carl D. Meinhart , Changsong Ding , Payam Bozorgi , Gaurav Soni , Brian D. Piorek
IPC分类号： F28D15/04 , B21D53/02
CPC分类号： F28D15/04 , F28D15/046 , H01L23/427 , H01L2924/0002 , Y10T29/4935 , H01L2924/00
摘要： Titanium-based thermal ground planes are described. A thermal ground plane in accordance with the present invention comprises a titanium substrate comprising a plurality of pillars, wherein the plurality of Ti pillars can be optionally oxidized to form nanostructured titania coated pillars, and a vapor cavity, in communication with the plurality of titanium pillars, for transporting thermal energy from one region of the thermal ground plane to another region of the thermal ground plane.
摘要翻译：描述了钛基热接地平面。根据本发明的热接地平面包括包括多个柱的钛基底，其中可以任选地氧化多个Ti柱以形成纳米结构的二氧化钛涂覆的柱，以及与多个钛柱连通的蒸气腔用于将热能从热接地平面的一个区域传送到热接地平面的另一个区域。

16. 发明授权

US07457033B2 MEMS tunable vertical-cavity semiconductor optical amplifier 有权
标题翻译： MEMS可调垂直腔半导体光放大器
公开(公告)号：US07457033B2
公开(公告)日：2008-11-25
申请号：US11442100
申请日：2006-05-26
申请人： Garrett D. Cole , E. Staffan Björlin , Qi Chen , Noel C. MacDonald , John E. Bowers
发明人： Garrett D. Cole , E. Staffan Björlin , Qi Chen , Noel C. MacDonald , John E. Bowers
IPC分类号： H01S5/00 , H01S3/086 , H01S3/16 , H01S5/187 , H01S5/343
CPC分类号： H01S5/50 , H01S5/041 , H01S5/0607 , H01S5/1025 , H01S5/18305 , H01S5/18308 , H01S5/18358 , H01S5/18366
摘要： A MEMS-tunable semiconductor optical amplifier (SOA). A device in accordance with the present invention comprises a substrate, a first mirror, coupled to the substrate, a second mirror, an active region, coupled between the first and second mirror, and a microelectromechanical actuator, coupled to the second mirror, wherein a voltage is applied to the microelectromechanical actuator to tune the SOA.
摘要翻译： MEMS可调谐半导体光放大器（SOA）。根据本发明的装置包括耦合到第一反射镜和耦合在第一和第二反射镜之间的基板，耦合到基板的第一反射镜，第二反射镜，有源区和耦合到第二反射镜的微机电致动器，其中，电压被施加到微机电致动器以调谐SOA。

17. 发明授权

US07339244B2 Small scale wires with microelectromechanical devices 有权
标题翻译：小型电线与微机电装置
公开(公告)号：US07339244B2
公开(公告)日：2008-03-04
申请号：US11340135
申请日：2006-01-26
申请人： Kanakasabapathi Subramanian , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Noel C. MacDonald
IPC分类号： H01L27/14 , H01L29/82
CPC分类号： B81C1/00142 , B81B2203/0361 , B81C1/00071 , B81C1/00111 , B81C2201/0112 , Y10S977/70 , Y10S977/762
摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.
摘要翻译：蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。在一个实施例中，使用掩模来限定单晶硅晶片中的线。该过程在对应于循环的线的侧壁上产生波纹。在一个实施例中，线被氧化以形成对应于每个纹波的硅线。在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。通过氧化相邻的波纹侧壁形成流体通道。同样的掩模也用于形成用于MEMS器件的其它结构。

18. 发明授权

US07045466B2 Three dimensional high aspect ratio micromachining 有权
标题翻译：三维高宽比微加工
公开(公告)号：US07045466B2
公开(公告)日：2006-05-16
申请号：US10607838
申请日：2003-06-27
申请人： Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
发明人： Kanakasabapathi Subramanian , Xiaojun T. Huang , Noel C. MacDonald
IPC分类号： H01L21/302
CPC分类号： B81C1/00626 , B81B2201/033 , H01L21/3086
摘要： Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
摘要翻译：通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。蚀刻图案以形成具有一层的结构。结构被氧化，直到较薄宽度的结构基本上被完全氧化。然后蚀刻一部分氧化物以露出第一层。然后蚀刻第一层以形成二楼。然后任选地除去氧化物，留下多层结构。在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。

19. 发明授权

US06767614B1 Multiple-level actuators and clamping devices 失效
标题翻译：多级执行器和夹紧装置
公开(公告)号：US06767614B1
公开(公告)日：2004-07-27
申请号：US10021311
申请日：2001-12-19
申请人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
发明人： Wolfgang M. J. Hofmann , Hercules Neves , Noel C. MacDonald , Scott G. Adams
IPC分类号： B32B300
CPC分类号： B81C1/0015 , B81B2201/033 , B81B2203/0136 , B81C2201/0112 , B81C2201/0132 , B81C2201/0198 , Y10T428/13 , Y10T428/24273 , Y10T428/24562 , Y10T428/24744 , Y10T428/24802
摘要： Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.
摘要翻译：公开了用于微机电结构的改进的制造工艺和通过改进的工艺制造的独特结构。在其最简单的形式中，制造工艺是对已知SCREAM工艺的修改，扩展并以这样的方式使用，以便产生可被称为“组合蚀刻”的组合垂直蚀刻和释放RIE工艺。使用本发明的方法制造单级微机械结构包括形成和释放悬浮的单晶硅元件的新型干蚀刻工艺，将垂直硅反应离子蚀刻（Si-RIE）和释放蚀刻相组合的工艺消除需要在悬浮结构的两侧沉积并排列二氧化硅掩模层，并降低由沉积的二氧化硅膜引起的悬浮结构中的机械应力。

20. 发明授权

US06239473B1 Trench isolation for micromechanical devices 有权
标题翻译：微机械装置的沟槽隔离
公开(公告)号：US06239473B1
公开(公告)日：2001-05-29
申请号：US09231082
申请日：1999-01-14
申请人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
发明人： Scott G. Adams , Kevin A. Shaw , Russell Y. Webb , Bryan W. Reed , Noel C. MacDonald , Timothy J. Davis
IPC分类号： H01L2984
CPC分类号： H01L21/76224 , B81B2203/0118 , B81B2203/033 , B81C1/00142 , B81C1/00698
摘要： An isolation process which enhances the performance of silicon micromechanical devices incorporates dielectric isolation segments within the silicon microstructure, which is otherwise composed of an interconnected grid of cantilevered beams. A metal layer on top of the beams provides interconnects and also allows contact to the silicon beams, electrically activating the device for motion or transduction. Multiple conduction paths are incorporated through a metal patterning step prior to structure definition. The invention improves manufacturability of previous processes by performing all lithographic patterning steps on flat topographies, and removing complicated metal sputtering steps required of most high aspect ratio processes. With little modification, the invention can be implemented with integrated circuit fabrication sequences for fully integrated devices.
摘要翻译：提高硅微机械器件性能的隔离工艺在硅微结构内部包含介电隔离段，否则由微悬臂梁的互连网格组成。在梁的顶部上的金属层提供互连并且还允许与硅束的接触，电激活装置以进行运动或转导。在结构定义之前，通过金属图案化步骤并入多个导电路径。本发明通过在平面形貌上进行所有平版印刷图案化步骤，以及去除大多数高纵横比工艺所需的复杂金属溅射步骤，从而提高先前工艺的可制造性。通过很少的修改，本发明可以用于完全集成的器件的集成电路制造序列。

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