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11. 发明申请

US20100109078A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20100109078A1
公开(公告)日：2010-05-06
申请号：US12522033
申请日：2007-01-04
申请人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42368 , H01L29/66712
摘要： A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control region. A current electrode region is formed in the body region.
摘要翻译：一种形成半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，在半导体层中形成第一导电类型的第一区域，并在半导体层上形成控制区域和第一个地区的一部分。在半导体层上形成掩模层，并且在第一区域的一部分上划出半导体层的表面的第一部分。第二导电类型的半导体材料被提供到轮廓的第一部分以在半导体层中提供第二区域。第一区域和第二区域被驱动到半导体层中，以便形成从控制区域的表面和部分控制区域延伸到半导体层的第一导电类型的预置区域和第二区域的分级体区域导电类型延伸到预控制区域下方的半导体层。通过将第二导电类型的半导体材料提供给轮廓的第一部分来形成体区。身体区域延伸到预控区域内。在身体区域中形成电流电极区域。

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