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11. 发明申请

US20100207681A1 ON-CHIP REDUNDANCY HIGH-RELIABLE SYSTEM AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：片上冗余高可靠性系统及其控制方法
公开(公告)号：US20100207681A1
公开(公告)日：2010-08-19
申请号：US12389194
申请日：2009-02-19
申请人： Nobuyasu Kanekawa , Ryoichi Kobayashi , Tomonobu Koseki , Katsuya Oyama
发明人： Nobuyasu Kanekawa , Ryoichi Kobayashi , Tomonobu Koseki , Katsuya Oyama
IPC分类号： G06F11/16
CPC分类号： G06F11/1645 , G06F11/1641 , G06F11/165
摘要： The present invention is directed to improve reliably of an on-chip redundancy system by preventing influence of a physical failure exerted on an entire semiconductor chip. A comparator measure for comparing outputs of an on-chip redundancy system is mounted on a semiconductor chip different from the on-chip redundancy system. The another semiconductor chip is, preferably, mounted on a semiconductor chip on which a power source circuit for supplying power to the on-chip redundancy system redundantly having the comparing function in the chip, a driver circuit for driving an output circuit, and the like are mounted. With the configuration, the influence of a failure occurring in the on-chip redundancy system can be prevented from being exerted on the comparator measure.
摘要翻译：本发明旨在通过防止对整个半导体芯片施加的物理故障的影响来可靠地提高片上冗余系统。用于比较片上冗余系统的输出的比较器测量装置安装在不同于片上冗余系统的半导体芯片上。另一半导体芯片优选地安装在半导体芯片上，在半导体芯片上，用于向片上冗余系统供电的电源电路冗余地具有芯片中的比较功能，用于驱动输出电路的驱动电路等被安装。利用该配置，可以防止在片上冗余系统中发生的故障的影响施加在比较器测量上。

12. 发明授权

US06484708B2 Resin sealed electronic device 有权
标题翻译：树脂密封电子设备
公开(公告)号：US06484708B2
公开(公告)日：2002-11-26
申请号：US10040463
申请日：2002-01-09
申请人： Satoshi Hirakawa , Toshiaki Kaminaga , Ryoichi Kobayashi , Noboru Sugiura
发明人： Satoshi Hirakawa , Toshiaki Kaminaga , Ryoichi Kobayashi , Noboru Sugiura
IPC分类号： F02P1500
CPC分类号： H05K5/065 , F02P3/02 , H01L23/3157 , H01L23/4334 , H01L2224/45124 , H01L2224/48472 , H01L2924/1305 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/19107 , H05K3/284 , H01L2924/00 , H01L2924/00012
摘要： Durability and lifetime of a resin sealed electronic device is improved by reducing thermal stresses acting on the power element and the parts mounting on the board. A power element of which the protective film on the power element is coated with a polyimide group resin at manufacturing the element is used, and a metallic heat sink of which the reverse side surface (portion of mounting on a board) is not plated is used. Further, a linear expansion coefficient of the molding resin is within a range of 3×10−6/°C. to 17×10−6/°C. The durability and the lifetime of the resin sealed electronic device is improved, because the thermal stresses are reduced by balancing linear expansion coefficients of the parts.
摘要翻译：通过减少作用在功率元件上的热应力和安装在板上的部件来改善树脂密封电子器件的耐久性和寿命。使用在制造元件时功率元件上的保护膜涂覆有聚酰亚胺基树脂的功率元件，并且使用金属散热器，其背面（安装在板上的部分）未被电镀。此外，成型树脂的线膨胀系数在3×10 -6 /℃的范围内。至17x10-6 /℃。树脂密封电子器件的耐久性和寿命得到改善，因为通过平衡部件的线性膨胀系数来减小热应力。

13. 发明授权

US06378514B1 Igniter for internal combustion engine 失效
标题翻译：内燃机点火器
公开(公告)号：US06378514B1
公开(公告)日：2002-04-30
申请号：US09726594
申请日：2000-12-01
申请人： Toshiaki Kaminaga , Noboru Sugiura , Ryoichi Kobayashi , Katsuaki Fukatsu
发明人： Toshiaki Kaminaga , Noboru Sugiura , Ryoichi Kobayashi , Katsuaki Fukatsu
IPC分类号： F02P7077
CPC分类号： H01T13/44 , F02P3/0552 , H01F38/12 , H01F2038/122 , H01L2224/48137 , H01L2224/48195 , H01L2224/48247 , H01L2224/48472 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/19105 , H01L2924/00 , H01L2924/00012
摘要： Object: The present invention is intended to supply an internal combustion engine-use igniter that is compact, excellent in mountability, and can contribute to the simplification and automation of assembly and to cost reduction. Implementing means: An insulated gate bipolar transistor (IGBT) is used as the ignition coil switching device for the internal combustion engine. The IGBT and a current limiting circuit intended to protect it from an overcurrent are formed on single semiconductor chip 3, and this semiconductor chip 3 and radio noise reduction capacitor 5 are contained in single packaging unit 4 having external input and output terminals 41 to 44. Packaging unit 4 is transfer-molded using a material such as epoxy resin.
摘要翻译：发明内容本发明旨在提供紧凑，安装性优异的内燃机用点火器，能够有助于组装的简化和自动化以及降低成本。实施手段：使用绝缘栅双极晶体管（IGBT）作为内燃机的点火线圈切换装置。在单个半导体芯片3上形成用于防止过电流的IGBT和限流电路，该半导体芯片3和无线降噪电容器5包含在具有外部输入输出端子41〜44的单个封装单元4中。包装单元4使用环氧树脂等材料进行转印成型。

14. 发明授权

US06321734B1 Resin sealed electronic device and method of fabricating the same and ignition coil for internal combustion engine using the same 失效
标题翻译：树脂密封电子器件及其制造方法以及使用其的内燃机的点火线圈
公开(公告)号：US06321734B1
公开(公告)日：2001-11-27
申请号：US09544555
申请日：2000-04-06
申请人： Toshiaki Kaminaga , Masami Shida , Noboru Sugiura , Ryoichi Kobayashi , Katsuaki Fukatsu
发明人： Toshiaki Kaminaga , Masami Shida , Noboru Sugiura , Ryoichi Kobayashi , Katsuaki Fukatsu
IPC分类号： H01L2329
CPC分类号： H01L23/295 , H01L21/563 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/01078 , H01L2924/01322 , H01L2924/1305 , H01L2924/19107 , H01L2924/00
摘要： In order to provide a resin sealed electronic device which is capable of securing high reliability by packaging with a transfer molding resin without using any under filler material, a resin sealed electronic device mounts a flip chip type monolithic IC on a hybrid circuit board through bumps and is packaged with a thermosetting resin through transfer molding. The transfer molding resin has a linear expansion coefficient of 3×10−6 to 17×10−6 and contains a filler having a particle size smaller than a height of the bump by more than 10 &mgr;m. The resin sealed electronic device is integrated in a unit including the hybrid circuit board mounting the flip chip type monolithic IC through transfer molding with the transfer molding resin, and the bump is restrained from moving by the transfer molding resin flowing around at transfer-molding.
摘要翻译：为了提供一种树脂密封电子器件，其能够通过在不使用任何填充材料的情况下用传递模塑树脂包装来确保高可靠性，树脂密封电子器件通过凸块将复合片式单片IC安装在混合电路板上，通过传递模塑与热固性树脂包装。传递模塑树脂的线膨胀系数为3×10 -6至17×10 -6，并且包含粒径小于凸点高度大于10um的填料。树脂密封电子器件集成在包括通过传输模塑树脂传输模制安装倒装芯片型单片IC的混合电路板的单元中，并且通过在传递模塑中流动的传递模塑树脂来抑制凸块的移动。

15. 发明授权

US06283104B1 Ignition system for internal combustion engine 有权
标题翻译：内燃机点火系统
公开(公告)号：US06283104B1
公开(公告)日：2001-09-04
申请号：US09526736
申请日：2000-03-16
申请人： Takashi Ito , Ryoichi Kobayashi , Katsuaki Fukatsu
发明人： Takashi Ito , Ryoichi Kobayashi , Katsuaki Fukatsu
IPC分类号： F02P100
CPC分类号： F02P15/08 , F02P3/051
摘要： A current on the primary side of an ignition coil is subjected to repeated conduction/cutoff control in accordance with an ignition control signal of an ECU to thereby generate a high voltage for ignition twice or more in one combustion stroke. In such a multiple ignition system for an internal combustion engine, the primary current of the ignition coil is detected by a resistor to thereby make the ECU recognize the fact that the primary current has reached a value not smaller than a set value through a signal line when the primary current becomes not smaller than the set value. The ECU determines cutoff timing in the second-time et seq. in the repeated conduction/cutoff control on the basis of the recognition.
摘要翻译：点火线圈的初级侧的电流根据ECU的点火控制信号进行重复的导通/切断控制，从而在一个燃烧冲程中产生两次以上的点火高电压。在这种用于内燃机的多重点火系统中，由电阻器检测点火线圈的初级电流，从而使得ECU识别出初级电流通过信号线达到不小于设定值的值当初级电流不小于设定值时。 ECU在第二次等待时确定切断时机。在重复导通/截止控制的基础上进行识别。

16. 发明授权

US6082344A Ignition device for an internal combustion engine 失效
标题翻译：内燃机点火装置
公开(公告)号：US6082344A
公开(公告)日：2000-07-04
申请号：US105273
申请日：1998-06-26
申请人： Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Yuichi Kashimura
发明人： Takashi Ito , Katsuaki Fukatsu , Ryoichi Kobayashi , Yuichi Kashimura
IPC分类号： F02P15/00 , F02P3/05 , H01F38/12
CPC分类号： F02P3/051
摘要： To provide an ignition device advantageous in cost and space by using an inexpensive small-sized Zener diode having a Zener voltage lower than an induced voltage generated at a primary current supply timing, so as to prevent sparking of a spark plug due to the induced voltage. An ignition device for an internal combustion engine, includes a Zener diode provided on the secondary lower-voltage side of an ignition coil. The Zener diode comes into conduction at a voltage lower than an induced voltage generated at a primary current supply timing.
摘要翻译：为了通过使用具有低于在初级电流定时产生的感应电压的齐纳电压的廉价小型齐纳二极管来提供有利于成本和空间的点火装置，以便防止由于感应电压引起的火花塞的火花。一种用于内燃机的点火装置，包括设置在点火线圈的次级低压侧的齐纳二极管。齐纳二极管以比初级电流供应时刻产生的感应电压低的电压进行导通。

17. 发明授权

US5674647A Phase shift mask and manufacturing method thereof and exposure method using phase shift mask 失效
标题翻译：相移掩模及其制造方法以及使用相移掩模的曝光方法
公开(公告)号：US5674647A
公开(公告)日：1997-10-07
申请号：US547520
申请日：1995-10-24
申请人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
发明人： Akihiko Isao , Ryoichi Kobayashi , Nobuyuki Yoshioka , Yaichiro Watakabe , Junji Miyazaki , Kouichiro Narimatsu , Shigenori Yamashita
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/38 , G03F1/54 , G03F1/80 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/38 , G03F1/54 , G03F1/80
摘要： A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide, or a molybdenum silicide oxide, or a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of at least 2% and less than 5%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film, or a molybdenum silicide oxide film, or a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.
摘要翻译：相移掩模的第二光透射部分由硅化钼化硅氧化物或硅化钼氧化物或氧化铬或氧化铬或碳化铬氮化物氧化物膜形成，其转换透射曝光光的相位 180°，透光率至少为2％且小于5％。在第二光透射部分的制造方法中，通过溅射法形成硅化钼硅化物氧化物膜或硅化钼氧化物膜，或氮氧化铬膜或氧化铬膜，或碳化氮化物氮化物膜。因此，利用传统的溅射装置，可以形成第二光透射部分，另外，仅需要一次移相器部分的蚀刻处理，从而可以减少制造过程中的缺陷概率和误差。

18. 发明授权

US4404539A Semiconductor strain gauge 失效
标题翻译：半导体应变计
公开(公告)号：US4404539A
公开(公告)日：1983-09-13
申请号：US236934
申请日：1981-02-23
申请人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
发明人： Kazuji Yamada , Motohisa Nishihara , Hideo Sato , Seiko Suzuki , Ryoichi Kobayashi
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06 , H01L29/84 , G01L1/22
CPC分类号： G01L9/0054 , G01L9/065
摘要： A semiconductor strain gauge is arranged as a bridge having four piezoresistive elements which each include a low impurity concentration diffused portion and a heavily-doped diffused portion. The resistance values of the two low impurity concentration diffused portions opposite each other in the bridge are greater than the resistance values of the other two lower impurity concentration portions. The resistances of the heavily-doped diffused portion are selected so that the resistance of the piezoresistive elements are equal. However, by virtue of the fact that the resistance temperature coefficient of the low impurity portions are greater than the resistance temperature coefficients of the high impurity portions, the overall resistance temperature coefficients of the bridge arms will be different. This permits the zero-point voltage of the bridge to always increase with an increase in temperature.
摘要翻译：半导体应变仪布置为具有四个压阻元件的桥，每个压阻元件包括低杂质浓度扩散部分和重掺杂扩散部分。在桥中彼此相对的两个低杂质浓度扩散部分的电阻值大于其它两个较低杂质浓度部分的电阻值。选择重掺杂扩散部分的电阻，使得压阻元件的电阻相等。然而，由于低杂质部分的电阻温度系数大于高杂质部分的电阻温度系数，所以桥臂的整体电阻温度系数将不同。这允许桥接器的零点电压总是随着温度的升高而增加。

19. 发明授权

US08533501B2 Information processing apparatus and control method of information processing apparatus 有权
标题翻译：信息处理装置及信息处理装置的控制方法
公开(公告)号：US08533501B2
公开(公告)日：2013-09-10
申请号：US13298804
申请日：2011-11-17
申请人： Ryoichi Kobayashi
发明人： Ryoichi Kobayashi
IPC分类号： G06F1/00
CPC分类号： H04L12/12 , H04L12/44 , Y02D50/40
摘要： An information processing apparatus includes a processing device configured to process data, a first line connecting device configured to be connected to the processing device, a second line connecting device configured to be connected to the processing device, a first input and output port configured to be connected to a first end device via a first line, a second input and output port configured to be connected to a second end device via a second line, a first selecting unit that includes a first terminal, and a second terminal and a third terminal, the first terminal being connected to the first line connecting device and either the second terminal or the third terminal.
摘要翻译：一种信息处理装置，包括处理数据的处理装置，被配置为连接到处理装置的第一线路连接装置，被配置为连接到处理装置的第二线路连接装置，被配置为经由第一线路连接到第一终端设备，第二输入和输出端口，被配置为经由第二线路连接到第二终端设备，第一选择单元，其包括第一终端，以及第二终端和第三终端，第一端子连接到第一线路连接装置和第二端子或第三端子。

20. 发明申请

US20110234304A1 On-Chip Redundancy High-Reliable System and Method of Controlling the Same 审中-公开
标题翻译：片上冗余高可靠系统及其控制方法
公开(公告)号：US20110234304A1
公开(公告)日：2011-09-29
申请号：US13152834
申请日：2011-06-03
申请人： Nobuyasu KANEKAWA , Ryoichi Kobayashi , Tomonobu Koseki , Katsuya Oyama
发明人： Nobuyasu KANEKAWA , Ryoichi Kobayashi , Tomonobu Koseki , Katsuya Oyama
IPC分类号： G06F11/16
CPC分类号： G06F11/1645 , G06F11/1641 , G06F11/165
摘要： The present invention is directed to improve reliably of an on-chip redundancy system by preventing influence of a physical failure exerted on an entire semiconductor chip. A comparator measure for comparing outputs of an on-chip redundancy system is mounted on a semiconductor chip different from the on-chip redundancy system. The another semiconductor chip is, preferably, mounted on a semiconductor chip on which a power source circuit for supplying power to the on-chip redundancy system redundantly having the comparing function in the chip, a driver circuit for driving an output circuit, and the like are mounted. With the configuration, the influence of a failure occurring in the on-chip redundancy system can be prevented from being exerted on the comparator measure.
摘要翻译：本发明旨在通过防止对整个半导体芯片施加的物理故障的影响来可靠地提高片上冗余系统。用于比较片上冗余系统的输出的比较器测量装置安装在不同于片上冗余系统的半导体芯片上。另一个半导体芯片优选地安装在半导体芯片上，在半导体芯片上，用于向片上冗余系统供电的电源电路冗余地具有芯片中的比较功能，用于驱动输出电路的驱动电路等被安装。利用该配置，可以防止在片上冗余系统中发生的故障的影响施加在比较器测量上。

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