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11. 发明授权

US08885351B2 Portable terminal 有权
标题翻译：便携式终端
公开(公告)号：US08885351B2
公开(公告)日：2014-11-11
申请号：US13117648
申请日：2011-05-27
申请人： Hyung-Gon Kim
发明人： Hyung-Gon Kim
IPC分类号： H05K5/00 , H04M1/00 , H04M1/02 , G06F1/16 , H04M1/23
CPC分类号： H04M1/0237 , G06F1/1624 , G06F1/169 , H04M1/00 , H04M1/026 , H04M1/233 , H04M2250/22
摘要： A portable terminal is formed with reinforced structures for withstanding external impacts. The portable terminal includes a front case and an input device arranged on the front case. A first rear cover coupled to a rear side of the front case is formed from a metallic material. A second rear cover coupled to the rear side of the front case and the first rear cover is formed from a synthetic resin. And a fastening device anchors the second rear cover to the rear side of the front case. The input device is positioned on an outer surface of the front case, and the fastening device is anchored to a rear side of the input device.
摘要翻译：便携式终端形成有用于承受外部冲击的加强结构。便携式终端包括前壳和布置在前壳上的输入装置。联接到前壳体的后侧的第一后盖由金属材料形成。联接到前壳体和第一后盖的后侧的第二后盖由合成树脂形成。并且紧固装置将第二后盖固定到前壳的后侧。输入装置定位在前壳体的外表面上，并且紧固装置被锚固到输入装置的后侧。

12. 发明授权

US08808841B2 Insert sheet and method for manufacturing the same 有权
标题翻译：插入片材及其制造方法
公开(公告)号：US08808841B2
公开(公告)日：2014-08-19
申请号：US13070345
申请日：2011-03-23
申请人： Min-Ho Lee , Jin-Woo Kim , Hyung-Gon Kim
发明人： Min-Ho Lee , Jin-Woo Kim , Hyung-Gon Kim
IPC分类号： B32B3/30
CPC分类号： C23C14/205
摘要： The present disclosure relates to insert sheets and a method for manufacturing same. A film of the present invention is applicable to a variety of insert moldings or injection moldings to achieve appearance effects such as an excellent metal texture and the like, and maintain excellence in the overall physical properties such as surface properties, formability, scratch resistance, impact resistance, heat resistance, wear resistance, chemical resistance, and light resistance, etc.
摘要翻译：本公开涉及插入片材及其制造方法。本发明的薄膜可应用于各种嵌件模制品或注射成型品以实现诸如优异的金属质感等的外观效果，并且保持整体物理性能如表面性能，成型性，耐擦伤性，冲击性的卓越性电阻，耐热性，耐磨性，耐化学性和耐光性等。

13. 发明申请

US20130029143A1 MULTILAYER SHEET FOR MOLDING WHICH IS HIGHLY GLOSSY EVEN AFTER A MOLDING PROCESS, AND METHOD FOR PREPARING SAME 审中-公开
标题翻译：即使在模制工艺之后也是高度成型的多层薄片及其制备方法
公开(公告)号：US20130029143A1
公开(公告)日：2013-01-31
申请号：US13639159
申请日：2011-04-08
申请人： Hyung-Gon Kim , Dong-Gon Kim , Min-Ho Lee , Gi-Jung Kim
发明人： Hyung-Gon Kim , Dong-Gon Kim , Min-Ho Lee , Gi-Jung Kim
IPC分类号： B32B27/08 , B32B38/10 , B32B27/36 , B05D1/36 , B32B27/40 , B32B27/30
CPC分类号： B32B27/08 , B32B2250/24 , B32B2307/406 , B32B2307/412 , B32B2307/536 , B32B2307/584 , Y10T428/269 , Y10T428/31573 , Y10T428/31797 , Y10T428/31909
摘要： The present invention relates to a multilayer sheet for insert molding, in which a first thermosetting transparent resin layer protects the surface of the sheet, and a second thermoplastic transparent resin layer maintains moldability. The multilayer sheet may reduce gloss variation on the surface layer caused by change in surface microstructure of a base sheet in the multilayer sheet, which can occur during molding, and exhibits excellent scratch and abrasion resistance.
摘要翻译：本发明涉及用于嵌件成型的多层片材，其中第一热固性透明树脂层保护片材的表面，第二热塑性透明树脂层保持成型性。多层片材可以减少由于在成型时可能发生的多层片材中的基片的表面微观结构的变化引起的表面层的光泽变化，并且显示出优异的耐擦伤性。

14. 发明申请

US20110171433A1 INSERT SHEET AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：插件及其制造方法
公开(公告)号：US20110171433A1
公开(公告)日：2011-07-14
申请号：US13070345
申请日：2011-03-23
申请人： Min-Ho LEE , Jin-Woo Kim , Hyung-Gon Kim
发明人： Min-Ho LEE , Jin-Woo Kim , Hyung-Gon Kim
IPC分类号： B32B3/30 , C23C14/34
CPC分类号： C23C14/205
摘要： The present disclosure relates to insert sheets and a method for manufacturing same. A film of the present invention is applicable to a variety of insert moldings or injection moldings to achieve appearance effects such as an excellent metal texture and the like, and maintain excellence in the overall physical properties such as surface properties, formability, scratch resistance, impact resistance, heat resistance, wear resistance, chemical resistance, and light resistance, etc.
摘要翻译：本公开涉及插入片材及其制造方法。本发明的薄膜可应用于各种嵌件模制品或注射成型品以实现诸如优异的金属质感等的外观效果，并且保持整体物理性能如表面性能，成型性，耐擦伤性，冲击性的卓越性电阻，耐热性，耐磨性，耐化学性和耐光性等。

15. 发明授权

US07457157B2 NAND flash memory devices and methods of LSB/MSB programming the same 有权
标题翻译： NAND闪存器件和LSB / MSB编程方法相同
公开(公告)号：US07457157B2
公开(公告)日：2008-11-25
申请号：US11279067
申请日：2006-04-07
申请人： Hyung-Gon Kim
发明人： Hyung-Gon Kim
IPC分类号： G11C16/10 , G11C16/34 , G11C16/06 , G11C7/10
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3454 , G11C16/3459 , G11C2211/5621
摘要： Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register.
摘要翻译：通过用LSB编程存储器单元，在NAND闪存器件中编程多个位; 将所述LSB从所述存储器单元存储到高速缓存寄存器中; 用存储在主寄存器中的MSB对存储单元进行编程; 在第一验证操作期间将数据位从存储器单元存储到主寄存器中; 在第二验证操作期间将数据位从存储器单元存储到高速缓存寄存器中; 并将数据位从缓存寄存器传送到主寄存器。

16. 发明授权

US08576638B2 Non-volatile memory device and non-volatile memory system having the same 有权
标题翻译：具有相同的非易失性存储器件和非易失性存储器系统
公开(公告)号：US08576638B2
公开(公告)日：2013-11-05
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
IPC分类号： G11C7/10
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译：非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。存储单元阵列包括正常存储单元和冗余存储单元。在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。然后，修复电路可以输出正常数据和冗余数据之一。

17. 发明申请

US20130088423A1 KEY INPUT APPARATUS FOR PORTABLE TERMINAL 审中-公开
标题翻译：便携式终端的主要输入设备
公开(公告)号：US20130088423A1
公开(公告)日：2013-04-11
申请号：US13619370
申请日：2012-09-14
申请人： Hyung-Gon Kim
发明人： Hyung-Gon Kim
IPC分类号： G06F3/01
CPC分类号： G06F3/03545 , H01H13/78 , H01H13/83 , H01H2205/016 , H01H2219/002 , H01H2227/026 , H01H2231/016 , H01H2231/022
摘要： A key input apparatus and a portable terminal having the key input apparatus are provided. The key input apparatus includes a main board, a display having flexibility and elasticity and at least one pressing switch placed between the main board and the display.
摘要翻译：提供具有键输入装置的键输入装置和便携式终端。键输入装置包括主板，具有柔性和弹性的显示器以及放置在主板和显示器之间的至少一个按压开关。

18. 发明申请

US20110267899A1 NON-VOLATILE MEMORY DEVICE AND NON-VOLATILE MEMORY SYSTEM HAVING THE SAME 有权
标题翻译：非易失性存储器件和非易失性存储器系统
公开(公告)号：US20110267899A1
公开(公告)日：2011-11-03
申请号：US13095159
申请日：2011-04-27
申请人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
发明人： Hyung-Gon Kim , Hyuk-Jun Yoo , Youn-Yeol Lee , Soo-Woong Lee , Kyung-Min Kim
IPC分类号： G11C7/10 , G11C29/04
CPC分类号： G11C29/846 , G11C16/0483
摘要： A non-volatile memory device may include a memory cell array, a page buffer, a column decoder, a column selection circuit and a repair circuit. The memory cell array includes normal memory cells and redundancy memory cells. In one example, the page buffer may load normal data and redundancy data from the memory cell array. The column decoder may generate a normal column selection signal and a redundancy column selection signal in response to a column address. The column selection circuit may select the normal data and redundancy data in response to the normal column selection signal and redundancy column selection signal. The repair circuit may then output one of the normal data and redundancy data.
摘要翻译：非易失性存储器件可以包括存储单元阵列，页缓冲器，列解码器，列选择电路和修复电路。存储单元阵列包括正常存储单元和冗余存储单元。在一个示例中，页面缓冲器可以从存储器单元阵列加载正常数据和冗余数据。列解码器可以响应于列地址而生成正常列选择信号和冗余列选择信号。列选择电路可以响应于正常列选择信号和冗余列选择信号来选择正常数据和冗余数据。然后，修复电路可以输出正常数据和冗余数据之一。

19. 发明授权

US07779341B2 NAND flash memory device performing error detecting and data reloading operation during copy back program operation 有权
标题翻译： NAND闪存器件在复制回程序操作期间执行错误检测和数据重新加载操作
公开(公告)号：US07779341B2
公开(公告)日：2010-08-17
申请号：US11430867
申请日：2006-05-10
申请人： Hyung-Gon Kim
发明人： Hyung-Gon Kim
IPC分类号： G06F11/00
CPC分类号： H03M13/11 , G06F11/1068
摘要： A NAND flash memory device performing an error detecting and data reloading operation during a copy back program operation is provided. The device includes a cell array having a plurality of planes and a parity cell array having a plurality of parity planes. Each of the parity planes stores a parity of each of the planes. Additionally, the device includes a parity generating and parity column selecting circuit generating a new parity about reloaded data from an outside during a copy back program operation, and storing the new parity on a parity plane corresponding to a plane on which the reloaded data is stored.
摘要翻译：提供了在复制回程序操作期间执行错误检测和数据重新加载操作的NAND快闪存储器件。该装置包括具有多个平面的单元阵列和具有多个奇偶校验平面的奇偶校验单元阵列。每个奇偶校验平面存储每个平面的奇偶校验。此外，该装置包括奇偶校验生成和奇偶校验列选择电路，其在复制回程序操作期间从外部产生关于重新加载的数据的新奇偶校验，并将新奇偶校验存储在对应于其上存储有重载数据的平面的奇偶校验平面上。

20. 发明申请

US20070014163A1 NAND Flash Memory Devices and Methods of LSB/MSB Programming the Same 有权
标题翻译： NAND闪存器件和LSB / MSB编程方法相同
公开(公告)号：US20070014163A1
公开(公告)日：2007-01-18
申请号：US11279067
申请日：2006-04-07
申请人： Hyung-Gon Kim
发明人： Hyung-Gon Kim
IPC分类号： G11C15/00
CPC分类号： G11C11/5628 , G11C16/0483 , G11C16/3454 , G11C16/3459 , G11C2211/5621
摘要： Multiple bits are programmed in a NAND flash memory device by programming a memory cell with an LSB; storing the LSB into a cache register from the memory cell; programming the memory cell with an MSB that is stored in a main register; storing a data bit into the main register from the memory cell during a first verifying operation; storing a data bit into the cache register from the memory cell during a second verifying operation; and transferring the data bit to the main register from the cache register. Related devices are also disclosed.
摘要翻译：通过用LSB编程存储器单元，在NAND闪存器件中编程多个位; 将所述LSB从所述存储器单元存储到高速缓存寄存器中; 用存储在主寄存器中的MSB对存储单元进行编程; 在第一验证操作期间将数据位从存储器单元存储到主寄存器中; 在第二验证操作期间将数据位从存储器单元存储到高速缓存寄存器中; 并将数据位从缓存寄存器传送到主寄存器。还公开了相关设备。

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