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11. 发明申请

US20060236763A1 Vibration-type piezoelectric acceleration sensor element and vibration-type piezoelectric acceleration sensor therewith 有权
标题翻译：振动式压电加速度传感器元件及其振动型压电加速度传感器
公开(公告)号：US20060236763A1
公开(公告)日：2006-10-26
申请号：US11182098
申请日：2005-07-15
申请人： Jiro Terada , Takami Ishida , Masaya Nakatani , Masahiro Yasumi
发明人： Jiro Terada , Takami Ishida , Masaya Nakatani , Masahiro Yasumi
IPC分类号： G01P15/09
CPC分类号： G01P15/0802 , B81B3/0051 , B81B2201/0235 , B81B2203/0127 , G01P15/097
摘要： The vibration-type piezoelectric acceleration sensor element includes a frame; and a diaphragm, support, and retentive part, provided in the frame. The diaphragm includes a bottom electrode layer, a piezoelectric thin-film layer formed on the bottom electrode layer, and a top electrode layer formed on the piezoelectric thin-film layer. A first end of the diaphragm is connected to the frame. The support retains a second end of the diaphragm. The retentive part retains the support so that the support is reciprocable only in a direction through the first end and the second end of the diaphragm.
摘要翻译：振动型压电加速度传感器元件包括框架; 以及在框架中提供的隔膜，支撑和保持部件。隔膜包括底电极层，形成在底电极层上的压电薄膜层和形成在压电薄膜层上的顶电极层。隔膜的第一端连接到框架。支架保持隔膜的第二端。保持部件保持支撑件，使得支撑件仅在通过隔膜的第一端和第二端的方向上往复运动。

12. 发明授权

US06436747B1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06436747B1
公开(公告)日：2002-08-20
申请号：US09551541
申请日：2000-04-18
申请人： Mizuki Segawa , Michikazu Matsumoto , Masahiro Yasumi
发明人： Mizuki Segawa , Michikazu Matsumoto , Masahiro Yasumi
IPC分类号： H01L21336
CPC分类号： H01L29/665 , H01L21/26513 , H01L21/324 , H01L21/823814 , H01L21/823835 , H01L29/4941
摘要： After phosphorus is ion implanted into a portion of a polysilicon film, first RTA is performed. After boron is ion implanted into another portion of the polysilicon film, the polysilicon film is patterned to form a gate electrode and a resistor film. A TEOS film is deposited and patterned to form a silicidation mask having an opening corresponding to a silicidation region. Thereafter, annealing for activating boron is performed in an atmosphere containing oxygen, thereby forming oxide films on a gate electrode and on heavily doped source/drain regions in the silicidation region. The oxide films suppress out-diffusion of the impurities and inhibit the impurity ions from penetrating the gate electrode 8 during ion implantation for promoting silicidation, which is performed subsequently.
摘要翻译：将磷离子注入多晶硅膜的一部分后，进行第一RTA。在将硼离子注入多晶硅膜的另一部分之后，将多晶硅膜图案化以形成栅电极和电阻膜。沉积TEOS薄膜并图案化以形成具有对应于硅化区域的开口的硅化掩模。此后，在含氧的气氛中进行活化硼的退火，从而在栅极电极和硅化物区域的重掺杂的源极/漏极区域上形成氧化物膜。氧化物膜抑制杂质的扩散，并且抑制杂质离子在用于促进硅化的离子注入期间穿透栅极8，随后进行。

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