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    • 11. 发明授权
    • Family of analog amplifier and comparator circuits with body voltage control
    • 具有体电压控制的模拟放大器和比较器电路系列
    • US06452448B1
    • 2002-09-17
    • US09616550
    • 2000-07-14
    • Anthony R. BonaccioMichel S. MichailWilbur D. PricerSteven J. Tanghe
    • Anthony R. BonaccioMichel S. MichailWilbur D. PricerSteven J. Tanghe
    • H03F345
    • H03F3/45748H03F3/4521H03F2203/45342H03F2203/45658H03F2203/45711
    • A structure for an amplifier circuit which includes a pair of source-coupled differential transistors, each of source-coupled differential transistors having a body and a gate, and input transistors electrically connected to the source-coupled transistors. Also, the input transistors load the body and the gate of the source-coupled transistors with positive feedback signals. As a result, a differential gain is increased and a common mode gain is not increased. The output of the pair of source-coupled differential transistors is directed to second pair of transistors. The second pair of transistors generates mirrored voltages which track with input voltages. The second pair of transistors generates mirrored voltages translated by an offset voltage to values near ground, mirrored voltages which represent a voltage gain over an input voltage, and mirrored voltages which are largely differential and includes approximately no common mode input voltage.
    • 一种用于放大器电路的结构,其包括一对源极耦合差分晶体管,每个源极耦合差分晶体管具有主体和栅极,以及输入晶体管,电连接到源耦合晶体管。 此外,输入晶体管负载负极反馈信号的源极耦合晶体管的主体和栅极。 结果,差分增益增加并且共模增益不增加。 一对源极耦合差分晶体管的输出被引导到第二对晶体管。 第二对晶体管产生用输入电压跟踪的镜像电压。 第二对晶体管产生由偏移电压转换为接近接近的值的镜像电压,表示输入电压上的电压增益的镜像电压和大幅度差分的近似不包含共模输入电压的镜像电压。
    • 13. 发明授权
    • Compound cascode amplifier
    • 复合共源共栅放大器
    • US5825245A
    • 1998-10-20
    • US855602
    • 1997-05-13
    • Michel S. MichailWilbur David Pricer
    • Michel S. MichailWilbur David Pricer
    • H03F3/30H03F3/45
    • H03F3/45179H03F3/3028H03F3/45219H03F2203/45028H03F2203/45658
    • A compound cascode amplifier comprising first and second FET input transistors, the gates of which are coupled to a differential input, and first and second FET cascode transistors. The sources of the first and second cascode transistors are coupled respectively to the drains of the first and second input transistors. The gate of the first cascode transistor is coupled to a reference voltage V Ref. The drain of the first cascode transistor is coupled to the gate of the second cascode transistor, and the drain of the second cascode transistor forms the output of the circuit. In operation the drive to the gate of the second cascode transistor arrives in synchronization with the drive to the source thereof, such that the drive to the gate arrives in anticipation of a voltage swing at the output of the second cascode transistor amplifier, not in reaction to it. Accordingly, this arrangement does not introduce a delay or an additional pole in the frequency response of the circuit. A more detailed embodiment of the compound cascode amplifier further includes first and second complementary FET input transistors, and first and second complementary FET cascode transistors.
    • 一种复合共源共栅放大器,包括第一和第二FET输入晶体管,其栅极耦合到差分输入,以及第一和第二FET共源共栅晶体管。 第一和第二共源共栅晶体管的源极分别耦合到第一和第二输入晶体管的漏极。 第一共源共栅晶体管的栅极耦合到参考电压V Ref。 第一共源共栅晶体管的漏极耦合到第二共源共栅晶体管的栅极,第二共源共栅晶体管的漏极形成电路的输出。 在操作中,到第二共源共栅晶体管的栅极的驱动到达与其源极的驱动同步,使得到达栅极的驱动器预期在第二共源共栅晶体管放大器的输出处的电压摆动,而不是在反应 给它 因此,这种布置不会在电路的频率响应中引入延迟或额外的极点。 复合共源共栅放大器的更详细的实施例还包括第一和第二互补FET输入晶体管以及第一和第二互补FET共源共栅晶体管。