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11. 发明申请

US20060292872A1 Atomic layer deposition of thin films on germanium 有权
标题翻译：原子层沉积在锗上的薄膜
公开(公告)号：US20060292872A1
公开(公告)日：2006-12-28
申请号：US11336621
申请日：2006-01-20
申请人： Suvi Haukka , Marko Tuominen , Antti Rahtu
发明人： Suvi Haukka , Marko Tuominen , Antti Rahtu
IPC分类号： H01L21/44 , H01L21/31
CPC分类号： H01L21/0228 , C23C16/0272 , C23C16/45525 , C23C16/45531 , H01L21/02175 , H01L21/28158 , H01L21/28255 , H01L21/3141 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L29/518
摘要： Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.
摘要翻译：锗具有比硅更高的迁移率，因此被认为是用于CMOS技术的良好替代半导体。表面处理a可以促进在锗衬底上的诸如高k电介质层的薄膜的原子层沉积（ALD）。表面处理可以包括形成GeO层或GeO x N层的薄层。在表面处理之后并且在沉积所需的薄膜之前，可以在衬底上沉积钝化层。钝化层可以是例如由ALD沉积的金属氧化物层。

12. 发明授权

US06500780B1 Method for preparing heterogeneous catalysts of desired metal content 失效
标题翻译：制备所需金属含量的非均相催化剂的方法
公开(公告)号：US06500780B1
公开(公告)日：2002-12-31
申请号：US08840274
申请日：1997-04-14
申请人： Tuomo Suntola , Suvi Haukka , Arla Kytökivi , Eeva-Liisa Lakomaa , Marina Lindblad , Jukka Hietala , Harri Hokkanen , Hilkka Knuuttila , Pekka Knuuttila , Outi Krause , Lars Peter Lindfors
发明人： Tuomo Suntola , Suvi Haukka , Arla Kytökivi , Eeva-Liisa Lakomaa , Marina Lindblad , Jukka Hietala , Harri Hokkanen , Hilkka Knuuttila , Pekka Knuuttila , Outi Krause , Lars Peter Lindfors
IPC分类号： B01J3702
CPC分类号： B01J37/0238 , B01J21/063 , B01J23/26 , B01J23/30
摘要： The present invention concerns a method for preparing heterogeneous catalysts. According to the method, preparation is carried out under such process conditions in which the bonding of compounds from the gas phase onto the surface of a support material is primarily determined by the properties of the support surface. The constituents contained in the reagent are then selectively bonded to the bonding sites of the support material surface, thus forming stable surface bonds. According to the invention, the number of surface-bond sites available for preparing a stable product with surface bonds is controlled by varying the reaction temperature and/or selecting a suitable reagent. The invention makes it possible to control the metal content of the end product at a predetermined level.
摘要翻译：本发明涉及一种制备非均相催化剂的方法。根据该方法，在这样的工艺条件下进行制备，其中化合物从气相到载体材料的表面上的键合主要由支撑体表面的性质决定。然后将包含在试剂中的组分选择性地结合到载体材料表面的结合位点，从而形成稳定的表面键。根据本发明，通过改变反应温度和/或选择合适的试剂来控制可用于制备具有表面键的稳定产物的表面键合位点的数目。本发明使得能够将最终产品的金属含量控制在预定水平。

13. 发明授权

US08592294B2 High temperature atomic layer deposition of dielectric oxides 有权
标题翻译：介电氧化物的高温原子层沉积
公开(公告)号：US08592294B2
公开(公告)日：2013-11-26
申请号：US12710185
申请日：2010-02-22
申请人： Suvi Haukka , Hannu Huotari , Marko Tuominen
发明人： Suvi Haukka , Hannu Huotari , Marko Tuominen
IPC分类号： H01L21/20
CPC分类号： C23C16/45525 , C23C16/402 , C23C16/403 , C23C16/405 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L28/40
摘要： Methods are provided herein for forming metal oxide thin films by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures such that the thin film is crystalline as deposited. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
摘要翻译：本文提供了通过原子层沉积形成金属氧化物薄膜的方法。金属氧化物薄膜可以在高温下沉积，使得薄膜是沉积的结晶的。金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

14. 发明申请

US20110293830A1 PRECURSORS AND METHODS FOR ATOMIC LAYER DEPOSITION OF TRANSITION METAL OXIDES 审中-公开
标题翻译：过渡金属氧化物原子层沉积的前兆和方法
公开(公告)号：US20110293830A1
公开(公告)日：2011-12-01
申请号：US13034564
申请日：2011-02-24
申请人： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
发明人： Timo Hatanpaa , Jaakko Niinisto , Mikko Ritala , Markku Leskela , Suvi Haukka
IPC分类号： C23C16/455
CPC分类号： C23C16/405 , C01G23/07 , C01G25/02 , C01G27/02 , C01P2006/40 , C23C16/45527 , C23C16/45536 , C23C16/45553
摘要： Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.
摘要翻译：本文提供了通过原子层沉积形成过渡金属氧化物薄膜，优选IVB族金属氧化物薄膜的方法。金属氧化物薄膜可以使用金属有机反应物在高温下沉积。在一些实施方案中使用包含两种配体的金属有机反应物，其中至少一种是环庚三烯或环庚三烯（CHT）配体。金属氧化物薄膜可以用作例如晶体管，闪光器件，电容器，集成电路和其它半导体应用中的电介质氧化物。

15. 发明授权

US07771534B2 Method of growing oxide thin films 有权
标题翻译：生长氧化物薄膜的方法
公开(公告)号：US07771534B2
公开(公告)日：2010-08-10
申请号：US11615827
申请日：2006-12-22
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B25/00
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporized, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在此过程中，将可汽化的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供了一种用于生长控制含有SiO 2的薄膜的控制方法，反应时间足够短。

16. 发明授权

US07771533B2 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide 有权
标题翻译：含有二氧化硅的薄膜的原子层 - 化学气相沉积
公开(公告)号：US07771533B2
公开(公告)日：2010-08-10
申请号：US10148525
申请日：2000-12-04
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B25/00
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2 with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供了一种控制方法，用于生长控制含有SiO 2的薄膜，反应时间足够短。

17. 发明申请

US20070254488A1 Methods for forming roughened surfaces and applications thereof 有权
标题翻译：形成粗糙表面的方法及其应用
公开(公告)号：US20070254488A1
公开(公告)日：2007-11-01
申请号：US11414510
申请日：2006-04-28
申请人： Hannu Huotari , Suvi Haukka
发明人： Hannu Huotari , Suvi Haukka
IPC分类号： H01L21/302
CPC分类号： H01L21/32051 , H01L27/10852 , H01L28/84 , Y10S977/742 , Y10S977/773
摘要： Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may be used, for example, in the manufacture of integrated circuits.
摘要翻译：提供了在基底上形成粗糙金属表面的方法以及包括这种粗糙表面的结构。在优选实施例中，通过在衬底表面上选择性地沉积金属或金属氧化物以形成离散的三维岛状体来形成粗糙表面。可以例如通过改变工艺条件以引起金属聚集或通过处理衬底表面以提供有限数量的不连续反应位点来获得选择性沉积。粗糙化的金属表面可以用于例如集成电路的制造。

18. 发明申请

US20070163488A1 METHOD OF GROWING OXIDE THIN FILMS 有权
标题翻译：生长氧化薄膜的方法
公开(公告)号：US20070163488A1
公开(公告)日：2007-07-19
申请号：US11615827
申请日：2006-12-22
申请人： Eva Tois , Suvi Haukka , Marko Tuominen
发明人： Eva Tois , Suvi Haukka , Marko Tuominen
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12
CPC分类号： H01L21/02156 , C23C16/401 , C23C16/402 , C23C16/44 , C23C16/45531 , C30B25/02 , C30B29/16 , H01L21/02145 , H01L21/02148 , H01L21/0215 , H01L21/02153 , H01L21/02159 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02222 , H01L21/0228 , H01L21/31612
摘要： Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO2, with sufficiently short reaction times.
摘要翻译：通过ALCVD法在生长衬底上生产含氧化硅的薄膜的方法。在该方法中，将可蒸发的硅化合物结合到生长衬底上，并将键合的硅化合物转化为二氧化硅。本发明包括使用含有至少一种有机配体的硅化合物，并且通过使键合的硅化合物与气化的活性氧源（特别是与臭氧）接触将其转化为二氧化硅。本发明提供一种用于生长控制含有SiO 2的薄膜的控制方法，其反应时间足够短。

19. 发明申请

US20070096321A1 Conformal lining layers for damascene metallization 有权
标题翻译：用于镶嵌金属化的保形衬层
公开(公告)号：US20070096321A1
公开(公告)日：2007-05-03
申请号：US11511877
申请日：2006-08-28
申请人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
发明人： Ivo Raaijmakers , Suvi Haukka , Ville Saanila , Pekka Soininen , Kai-Erik Elers , Ernst Granneman
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： C23C16/45525 , C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/45534 , C23C16/45536 , C30B25/02 , C30B29/02 , C30B29/36 , H01L21/28562 , H01L21/7681 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76873 , H01L23/5226 , H01L23/53223 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.
摘要翻译：提供了集成电路中双镶嵌结构的保形衬里的方法和结构。沟槽和接触通孔形成在绝缘层中。沟槽和通孔暴露于交替的化学物质以形成所需衬里材料的单层。示例性工艺流程包括交替脉冲的金属卤化物和注入恒定载流子的氨气。自身端接的金属层因此与氮气反应。接近完美的台阶覆盖允许扩散阻挡功能的最小厚度，从而使任何给定沟槽和通孔尺寸的后续填充金属的体积最大化。

20. 发明授权

US07045406B2 Method of forming an electrode with adjusted work function 有权
标题翻译：形成具有调节功函数的电极的方法
公开(公告)号：US07045406B2
公开(公告)日：2006-05-16
申请号：US10430703
申请日：2003-05-05
申请人： Hannu Huotari , Suvi Haukka , Marko Tuominen
发明人： Hannu Huotari , Suvi Haukka , Marko Tuominen
IPC分类号： H01L21/28
CPC分类号： H01L21/28194 , H01L21/28088 , H01L21/823828 , H01L21/823842 , H01L29/4966 , H01L29/517
摘要： A method forms a gate stack for a semiconductor device with a desired work function of the gate electrode. The work function is adjusted by changing the overall electronegativity of the gate electrode material in the region that determines the work function of the gate electrode during the gate electrode deposition. The gate stack is deposited by an atomic layer deposition type process and the overall electronegativity of the gate electrode is tuned by introducing at least one pulse of an additional precursor to selected deposition cycles of the gate electrode. The tuning of the work function of the gate electrode can be done not only by introducing additional material into the gate electrode, but also by utilizing the effects of a graded mode deposition and thickness variations of the lower gate part of the gate electrode in combination with the effects that the incorporation of the additional material pulses offers.
摘要翻译：一种方法形成具有期望的栅电极功函数的半导体器件的栅堆叠。通过在栅电极沉积期间改变确定栅电极的功函数的区域中的栅极电极材料的总体电负性来调整功函数。通过原子层沉积型工艺沉积栅极堆叠，并通过向选择的栅电极的沉积循环引入附加前体的至少一个脉冲来调节栅电极的整体电负性。栅电极的功函数的调谐不仅可以通过向栅电极引入额外的材料，还可以通过利用栅电极的下栅极部分的分级模式淀积和厚度变化的结果与附加材料脉冲的结合提供的效果。

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