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    • 11. 发明授权
    • Radiation imaging element
    • 辐射成像元件
    • US08008627B2
    • 2011-08-30
    • US12204582
    • 2008-09-04
    • Hiroyuki YaegashiMasaya Nakayama
    • Hiroyuki YaegashiMasaya Nakayama
    • G01T1/24
    • G01T1/2018
    • A radiation imaging element that includes a plurality of pixel portions each having a phosphor layer that absorbs radiation transmitted through a subject to emit light, a photoelectric conversion portion that includes an upper electrode, a lower electrode, and a photoelectric conversion layer disposed between the upper electrode and the lower electrode, and a TFT which outputs a signal corresponding to an electric charge generated in the photoelectric conversion layer, wherein the TFT includes at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, and an electric insulating layer is further provided so as to be electrically connected between the active layer and at least one of the source electrode or the drain electrode.
    • 一种放射线摄像元件,包括多个像素部分,每个像素部分具有吸收被照射物体发射的辐射的荧光体层;光电转换部分,包括上电极,下电极和设置在上部的光电转换层之间的光电转换部分 电极和下电极,以及TFT,输出对应于在光电转换层中产生的电荷的信号,其中TFT至少包括栅电极,栅极绝缘层,有源层,源电极和漏极 电极和电绝缘层进一步设置为电连接在有源层与源电极或漏电极中的至少一个之间。
    • 13. 发明授权
    • Image sensor having plural pixels adjacent to each other in a thickness direction and method for manufacturing the same
    • 具有在厚度方向上彼此相邻的多个像素的图像传感器及其制造方法
    • US07626156B2
    • 2009-12-01
    • US12209000
    • 2008-09-11
    • Hiroshi TadaMasayuki HayashiMasaya Nakayama
    • Hiroshi TadaMasayuki HayashiMasaya Nakayama
    • H01L27/00
    • H01L27/14647
    • An image sensor 1 has a substrate 2 and primary light-receiving pixels 4 arrayed in the direction of the surface of the substrate, and the primary light-receiving pixels are formed by laminating plural secondary light-receiving pixels 10, 20 and 30 which sense lights in different wavelength ranges, respectively, via at least sealing insulation layers 18 and 28 between adjacent secondary light-receiving pixels in the thickness direction. Each secondary light-receiving pixel includes a photoelectric conversion portion 14, 24, or 34 for photoelectrically converting the lights and a signal output portion 12, 22 or 32 for outputting signals from a thin film transistor 40 according to charges generated by the photoelectric conversion portion, and the active layer 48 of the thin film transistor is formed from an oxide semiconductor or organic semiconductor.
    • 图像传感器1具有在基板的表面方向排列的基板2和一次受光像素4,并且通过层叠感测的多个次级受光像素10,20和30来形成一次受光像素 通过至少在相邻的次级光接收像素之间的厚度方向上的密封绝缘层18和28分别在不同波长范围内的光。 每个次级光接收像素包括用于光电转换光的光电转换部分14,24或34以及用于根据由光电转换部分产生的电荷从薄膜晶体管40输出信号的信号输出部分12,22或32 并且薄膜晶体管的有源层48由氧化物半导体或有机半导体形成。
    • 15. 发明授权
    • Organic electroluminescent display device and method for producing the same
    • 有机电致发光显示装置及其制造方法
    • US07902743B2
    • 2011-03-08
    • US11892390
    • 2007-08-22
    • Masaya Nakayama
    • Masaya Nakayama
    • H01L51/50
    • H01L27/3246H01L27/3276
    • An organic electroluminescent display device includes a substrate, lower electrodes arranged in stripes on the substrate, an insulating layer arranged on the lower electrodes, upper transparent electrodes arranged in stripes in a direction intersecting with the lower electrodes, an organic electroluminescent layer arranged between the lower electrodes and the upper transparent electrodes, electrodes auxiliary to the upper electrodes arranged on the insulating layer and connected with the upper transparent electrodes, and insulating barrier walls arranged on the insulating layer or the electrodes auxiliary to the upper electrodes, the widths of which are broadened in the upper portions, wherein the upper electrodes are connected to the electrodes auxiliary to the upper electrodes at a position between the insulating layer and a region where the width of the insulating barrier wall is broadest, and are connected within a region corresponding to the broadest width of the insulating barrier wall; and a method for producing the device.
    • 一种有机电致发光显示装置,包括:基板,在基板上以条纹布置的下电极,布置在下电极上的绝缘层,沿与下电极相交的方向上排列成条状的上透明电极;布置在下电极之间的有机电致发光层 电极和上部透明电极,布置在绝缘层上并与上部透明电极连接的上部电极辅助的电极和布置在绝缘层上的绝缘壁或辅助于上部电极的电极,其宽度变宽 在上部,其中上部电极在绝缘层和绝缘阻挡壁的宽度最宽的区域之间的位置处连接到辅助于上部电极的电极,并且在与最宽的区域相对应的区域内连接 绝缘条的宽度 墙壁 以及该装置的制造方法。
    • 16. 发明授权
    • Process for producing 4,9-dibromodiamantane
    • 生产4,9-二溴二聚烷烃的方法
    • US07872164B2
    • 2011-01-18
    • US12440672
    • 2007-09-25
    • Katsuyuki WatanabeKensuke MoritaMasaya Nakayama
    • Katsuyuki WatanabeKensuke MoritaMasaya Nakayama
    • C07C17/093
    • C07C17/10C07C23/46
    • A process for selectively producing 4,9-dibromodiamantane includes a step of reacting diamantane with bromine in the presence of a Lewis acid and a solvent, wherein the solvent comprises a substituted or unsubstituted, straight-chain, branched-chain or cyclic saturated hydrocarbon containing from 3 to 10 carbon atoms, and a reaction solution after the step satisfies Formula (1): A/(A+B+C+D+E)>0.80   Formula (1) wherein A represents an area ratio (%) of 4,9-dibromodiamantane obtained by gas chromatography of the reaction solution, B represents an area ratio of diamantane, C represents a sum of an area ratio of 1-bromodiamantane and an area ratio of 4-bromodiamantane, D represents an area ratio of tribromodiamantane, and E represents a sum of an area ratio of 1,6-dibromodiamantane and an area ratio of 1,4-dibromodiamantane.
    • 选择性生产4,9-二溴二聚烷烃的方法包括在路易斯酸和溶剂存在下使二金刚烷与溴反应的步骤,其中溶剂包括取代或未取代的直链,支链或环状饱和烃 3〜10个碳原子,后述的反应溶液满足式(1):A /(A + B + C + D + E)> 0.80式(1)其中A表示面积比(%)为4 ,通过反应溶液的气相色谱法获得的9-二溴二聚烷烃,B表示金刚烷的面积比,C表示1-溴二胺的面积比和4-溴二胺的面积比的总和,D表示三溴二甲烷的面积比, E表示1,6-二溴二甲烷的面积比和1,4-二溴二聚烷的面积比之和。
    • 18. 发明申请
    • Organic EL device and its manufacture method
    • 有机EL器件及其制造方法
    • US20070031588A1
    • 2007-02-08
    • US11526709
    • 2006-09-26
    • Masaya Nakayama
    • Masaya Nakayama
    • B05D5/06B05D5/12
    • H01L27/3246H01L27/12H01L27/3272H01L29/7866H01L51/5206
    • A TFT is formed on a substrate. TFT has first and second regions as a source and a drain, a channel region between the first and second regions, and a gate electrode. An interlayer insulating film is formed on the substrate, covering the thin film transistor. A pixel electrode disposed on the interlayer insulating film is electrically connected to the first region of TFT via a via hole formed in the interlayer insulating film. A cover film covers the edge of the pixel electrode, exposes the inner area of the pixel electrode, and covers the surface of the interlayer insulating film in the area superposed upon the channel region of the thin film transistor to shield an ultraviolet ray. An organic light emission layer and an upper electrode are disposed on and above the pixel electrode.
    • 在基板上形成TFT。 TFT具有第一和第二区域作为源极和漏极,在第一和第二区域之间的沟道区域和栅电极。 在基板上形成层间绝缘膜,覆盖薄膜晶体管。 设置在层间绝缘膜上的像素电极经由形成在层间绝缘膜中的通孔与TFT的第一区域电连接。 覆盖膜覆盖像素电极的边缘,暴露像素电极的内部区域,并且覆盖叠层在薄膜晶体管的沟道区域上的区域中的层间绝缘膜的表面以屏蔽紫外线。 有机发光层和上电极设置在像素电极上和上方。