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11. 发明申请

US20110054172A1 PYRIDYLAMINOACETIC ACID COMPOUND 有权
标题翻译：吡啶酰胺酸化合物
公开(公告)号：US20110054172A1
公开(公告)日：2011-03-03
申请号：US12922028
申请日：2009-03-12
申请人： Ryo Iwamura , Masayuki Tanaka , Tetsushi Katsube , Manabu Shigetomi , Eiji Okanari , Yasunori Tokunaga , Hiroshi Fujiwara
发明人： Ryo Iwamura , Masayuki Tanaka , Tetsushi Katsube , Manabu Shigetomi , Eiji Okanari , Yasunori Tokunaga , Hiroshi Fujiwara
IPC分类号： C07D401/14 , C07D417/14 , C07D401/12 , C07D405/14 , C07D417/12
CPC分类号： C07D417/14 , A61K9/0053 , A61K9/2018 , A61K9/4858 , C07D213/74 , C07D401/14 , C07D405/14 , C07D409/14 , C07D417/12
摘要： The present invention provides a novel pyridylaminoacetic acid compound represented by the following formula (1): (wherein R1, R2, R3, Y and Z are as defined in the description and claims), or a pharmacologically acceptable salt thereof. The pyridylaminoacetic acid compound has EP2 agonistic action and is therefore useful as a therapeutic and/or prophylactic agent for respiratory diseases such as asthma or chronic obstructive pulmonary disease.
摘要翻译：本发明提供由下式（1）表示的新颖的吡啶基氨基乙酸化合物或其药学上可接受的盐，其中R1，R2，R3，Y和Z如说明书和权利要求中所定义。吡啶基氨基乙酸化合物具有EP2激动作用，因此可用作呼吸系统疾病如哮喘或慢性阻塞性肺疾病的治疗和/或预防剂。

12. 发明申请

US20100308393A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100308393A1
公开(公告)日：2010-12-09
申请号：US12722111
申请日：2010-03-11
申请人： Kazuhiro Matsuo , Masayuki Tanaka
发明人： Kazuhiro Matsuo , Masayuki Tanaka
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/42336 , H01L27/11521 , H01L29/40114
摘要： A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film.
摘要翻译：一种半导体器件，包括具有通过元件隔离绝缘膜隔离的有源区的半导体衬底; 形成在位于有源区上的栅极绝缘膜上的浮栅电极膜; 在所述元件隔离绝缘膜的上表面上方形成的电极间绝缘膜，以及所述浮栅电极膜的上表面和侧壁，所述电极间绝缘膜由多层膜构成，所述多个膜层包括介电常数等于或等于大于氮化硅膜; 形成在电极间绝缘膜上的控制栅极电极膜; 以及在所述浮栅电极膜的上表面和所述电极间绝缘膜之间形成的氧化硅膜; 其中，电极间绝缘膜的高电介质膜与浮栅电极膜的侧壁直接接触。

13. 发明授权

US07833856B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07833856B2
公开(公告)日：2010-11-16
申请号：US11802114
申请日：2007-05-21
申请人： Masayuki Tanaka , Hirokazu Ishida
发明人： Masayuki Tanaka , Hirokazu Ishida
IPC分类号： H01L21/8238 , H01L21/336 , H01L29/423
CPC分类号： H01L27/115 , H01L27/11521
摘要： According to an aspect of the invention, there is provided a semiconductor device comprising a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a first conductive layer formed as a floating gate on the first insulating layer, a second insulating layer formed as an interelectrode insulating film on the first conductive layer, and comprising three layers of a first film mainly including silicon and oxygen, a second film mainly including silicon and nitrogen, and a third film mainly including silicon and oxygen, wherein a silicon and nitrogen composition ratio of the second film is in a state in which the silicon is in excess of a stoichiometric composition, and a second conductive layer formed as a control gate on the second insulating film.
摘要翻译：根据本发明的一个方面，提供一种半导体器件，包括半导体衬底，形成在半导体衬底上的第一绝缘层，在第一绝缘层上形成为浮栅的第一导电层，形成为第一绝缘层的第二绝缘层在第一导电层上的电极间绝缘膜，并且包括三层主要包括硅和氧的第一膜，主要包括硅和氮的第二膜和主要包括硅和氧的第三膜，其中硅和氮的组成比所述第二膜处于所述硅超过化学计量组成的状态，以及在所述第二绝缘膜上形成为控制栅极的第二导电层。

14. 发明授权

US07812391B2 Nonvolatile semiconductor memory device and method of fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07812391B2
公开(公告)日：2010-10-12
申请号：US12354200
申请日：2009-01-15
申请人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
发明人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
IPC分类号： H01L21/76
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/94
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜，区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

15. 发明授权

US07772636B2 Nonvolatile semiconductor memory device with multilayer interelectrode dielectric film 有权
标题翻译：具有多层电极介质膜的非易失性半导体存储器件
公开(公告)号：US07772636B2
公开(公告)日：2010-08-10
申请号：US11785694
申请日：2007-04-19
申请人： Hirokazu Ishida , Masayuki Tanaka
发明人： Hirokazu Ishida , Masayuki Tanaka
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory device includes a first dielectric layer formed on the major surface of a semiconductor substrate, a floating gate electrode layer formed on the first dielectric layer, a second dielectric layer obtained by sequentially forming, on the floating gate electrode layer, a lower dielectric film mainly containing silicon and nitrogen, an intermediate dielectric film, and an upper dielectric film mainly containing silicon and nitrogen, a control gate electrode layer formed on the second dielectric layer, and a buried dielectric layer formed by covering the two side surfaces in the gate width direction of the stacked structure including the above-mentioned layers. The nonvolatile semiconductor memory device further includes a silicon oxide film formed near the buried dielectric layer in the interface between the floating gate electrode layer and lower dielectric film.
摘要翻译：非易失性半导体存储器件包括形成在半导体衬底的主表面上的第一电介质层，形成在第一电介质层上的浮栅电极层，通过在浮栅电极层上依次形成下层主要含有硅和氮的电介质膜，中间电介质膜和主要含有硅和氮的上电介质膜，形成在第二介电层上的控制栅极电极层和通过覆盖第二电介质层中的两个侧表面而形成的掩埋电介质层包括上述层的层叠结构的栅极宽度方向。非易失性半导体存储器件还包括在浮置栅极电极层和下部电介质膜之间的界面中形成在掩埋电介质层附近的氧化硅膜。

16. 发明申请

US20100102377A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100102377A1
公开(公告)日：2010-04-29
申请号：US12467424
申请日：2009-05-18
申请人： Hirofumi IIKAWA , Masayuki Tanaka
发明人： Hirofumi IIKAWA , Masayuki Tanaka
IPC分类号： H01L29/792 , H01L21/762 , H01L21/336
CPC分类号： H01L29/42336 , H01L21/76224 , H01L27/11519 , H01L27/11521 , H01L27/11524 , H01L29/513 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a plurality of charge storage layers formed on the first insulating layer, a plurality of element isolation insulating films formed between the charge storage layers respectively, a second insulating layer formed on the charge storage layers and the element isolation insulating films, the second insulating layer including a stacked structure of a first silicon nitride film, a first silicon oxide film, an intermediate insulating film having a relative dielectric constant of not less than 7 and a second silicon oxide film, and a control electrode formed on the second insulating layer. The first silicon nitride film has a nitrogen concentration of not less than 21×1015 atoms/cm2.
摘要翻译：非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的多个电荷存储层，分别形成在电荷存储层之间的多个元件隔离绝缘膜，第二绝缘层绝缘层，形成在电荷存储层和元件隔离绝缘膜上，第二绝缘层包括第一氮化硅膜，第一氧化硅膜，相对介电常数不小于7的中间绝缘膜的堆叠结构和第二氧化硅膜，以及形成在第二绝缘层上的控制电极。第一氮化硅膜的氮浓度不小于21×10 15原子/ cm 2。

17. 发明授权

US07635890B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07635890B2
公开(公告)日：2009-12-22
申请号：US11783934
申请日：2007-04-13
申请人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
发明人： Yoshio Ozawa , Akihito Yamamoto , Masayuki Tanaka , Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka
IPC分类号： H01L29/76
CPC分类号： H01L29/7883 , H01L27/115 , H01L27/11521 , H01L29/42324
摘要： A semiconductor device includes a semiconductor substrate, a plurality of nonvolatile memory cells provided on the semiconductor substrate, each of the plurality of nonvolatile memory cells comprising a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a control gate electrode provided above the charge storage layer, a second insulating film provided between the control gate electrode and the charge storage layer, the second insulating film between adjacent charge storage layers including a first region having permittivity lower than that of the second insulating film on a top surface of the charge storage layer in a cross-section view of a channel width direction of the nonvolatile memory cell, and the first region having composition differing from that of the second insulating film on the top surface of the charge storage layer.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的多个非易失性存储单元，所述多个非易失性存储单元中的每一个包括设置在所述半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上方的控制栅电极，设置在所述控制栅电极和所述电荷存储层之间的第二绝缘膜，所述相邻电荷存储层之间的所述第二绝缘膜包括具有低于所述第二绝缘膜的介电常数的第一区域在电荷存储层的顶表面上，以非易失性存储单元的沟道宽度方向的横截面视图，并且第一区域具有与电荷存储层的顶表面上的第二绝缘膜不同的组成。

18. 外观设计

USD600655S1 Spring for a manipulative input device 有权
标题翻译：弹簧用于操纵输入设备
公开(公告)号：USD600655S1
公开(公告)日：2009-09-22
申请号：US29282140
申请日：2007-07-12
申请人： Takeshi Miyasaka , Masayuki Tanaka
设计人： Takeshi Miyasaka , Masayuki Tanaka

19. 发明申请

US20090207288A1 SIGNAL READOUT METHOD OF SOLID-STATE IMAGING DEVICE AND IMAGE SIGNAL PROCESSING METHOD 失效
标题翻译：固态成像装置的信号读出方法及图像信号处理方法
公开(公告)号：US20090207288A1
公开(公告)日：2009-08-20
申请号：US11994564
申请日：2006-06-01
申请人： Masayuki Tanaka , Masatoshi Okutomi
发明人： Masayuki Tanaka , Masatoshi Okutomi
IPC分类号： H04N5/335
CPC分类号： H04N9/045 , H04N5/2355 , H04N2209/045
摘要： The present invention provides a signal readout method of solid-state imaging device which can simultaneously readouts the signals having different properties that can generate multiple images obtained by capturing the same subject under different capturing conditions from one solid-state imaging device.A signal readout method of solid-state imaging device that is applied to a solid-state imaging device with a color filter array (CFA) and multiple pixels, the method characterized in that a pixel mixture of a different number of pixels is performed for every readout signal in the solid-state imaging device, and a signal after the pixel mixture is readout. The signal after the pixel mixture means a first signal after the pixel mixture that is obtained by performing the pixel mixture of predetermined L pixels (L≦n×m) within (n×m) pixels (n and m are natural numbers) consisting of n pixels in a vertical direction and m pixels in a horizontal direction of the solid-state imaging device, and a second signal after the pixel mixture that is obtained by down sampling pixel signals of (n×m) pixels without performing pixel mixture of (n×m) pixels.
摘要翻译：本发明提供了一种固态成像装置的信号读出方法，其可以同时读出具有不同属性的信号，这些信号可以产生通过在不同拍摄条件下从一个固态成像装置捕获相同被摄体而获得的多个图像。一种固态成像装置的信号读出方法，其应用于具有滤色器阵列（CFA）和多个像素的固态成像装置，该方法的特征在于，对每个像素执行不同数量的像素的像素混合在固态成像装置中的读出信号，以及像素混合后的信号被读出。像素混合后的信号是指在通过在（n×m）个像素（n和m是自然数）内由n个像素组成的预定的L个像素（L <= n×m）中的像素混合执行的像素混合之后的第一信号，在固态摄像装置的水平方向上的垂直方向和m个像素以及通过对（n×m）像素的像素信号进行下采样而不执行（n×m）像素的像素混合而获得的像素混合之后的第二信号。

20. 发明申请

US20090152618A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090152618A1
公开(公告)日：2009-06-18
申请号：US12333983
申请日：2008-12-12
申请人： Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
发明人： Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L29/513 , H01L29/7881
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film.
摘要翻译：非易失性半导体存储器件包括半导体衬底，形成在半导体衬底上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在电荷存储层上的第二绝缘层，形成在第二绝缘层上的控制电极层。第二绝缘层包括第一氧化硅膜，形成在第一氧化硅膜上并具有不小于7的相对介电常数的中间绝缘膜和形成在中间绝缘膜上的第二氧化硅膜。至少在第一或第二氧化硅膜或第一氧化硅膜和中间绝缘膜之间的边界或第二氧化硅膜和中间绝缘膜之间的边界上形成电荷陷阱层。

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