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11. 发明申请

US20070246708A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070246708A1
公开(公告)日：2007-10-25
申请号：US11736959
申请日：2007-04-18
申请人： Kenichi Mori , Shinsuke Sakashita , Kazuki Tanaka
发明人： Kenichi Mori , Shinsuke Sakashita , Kazuki Tanaka
IPC分类号： H01L29/04
CPC分类号： H01L21/823842 , H01L21/823857 , H01L27/0922
摘要： A semiconductor device comprising a high-dielectric film in a part of a gate insulation film is provided by a more simplified method. In a semiconductor device having a first region and a second region, a first gate electrode, a second gate electrode and a high-dielectric gate insulation film are formed in the first region (core part). The first gate electrode and the second gate electrode have different composition ratios. The first gate electrode and the second gate electrode are formed on the high-dielectric gate insulation film. Furthermore, a third gate electrode and a fourth gate electrode and a SiON film or SiO2 film are formed in the second region (I/O part). Impurity elements doped in the third gate electrode and the fourth gate electrode are different in kind and/or concentration. In addition, the third gate electrode and the fourth gate electrode are formed on the SiON film or SiO2 film.
摘要翻译：通过更简化的方法提供了在栅极绝缘膜的一部分中包括高电介质膜的半导体器件。在具有第一区域和第二区域的半导体器件中，在第一区域（芯部）中形成第一栅电极，第二栅电极和高电介质栅极绝缘膜。第一栅电极和第二栅电极具有不同的组成比。第一栅电极和第二栅电极形成在高电介质栅绝缘膜上。此外，在第二区域（I / O部分）中形成第三栅电极和第四栅电极以及SiON膜或SiO 2膜。掺杂在第三栅电极和第四栅电极中的杂质元素的种类和/或浓度不同。此外，在SiON膜或SiO 2膜上形成第三栅电极和第四栅电极。

12. 发明授权

US07030000B2 Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element 失效
标题翻译：高介电常数的金属氧化物，高介电常数的金属氧化物，栅绝缘膜和半导体元件的制造方法
公开(公告)号：US07030000B2
公开(公告)日：2006-04-18
申请号：US10807235
申请日：2004-03-24
申请人： Akira Sakai , Yukio Yasuda , Shigeaki Zaima , Mitsuo Sakashita , Hiroki Kondo , Shinsuke Sakashita
发明人： Akira Sakai , Yukio Yasuda , Shigeaki Zaima , Mitsuo Sakashita , Hiroki Kondo , Shinsuke Sakashita
IPC分类号： H01L21/31 , H01L29/772
CPC分类号： H01L21/3247 , C30B29/16 , C30B33/02 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.
摘要翻译：给定的金属氧化物膜在衬底上外延生长。然后，对基板和金属氧化物膜进行热处理以将基板的构成元件与金属氧化物膜的构成金属氧化物元件混合，并通过混合该金属氧化物膜而在基板上形成高介电常数的金属氧化物膜构成要素。

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