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11. 发明申请

US20070215929A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20070215929A1
公开(公告)日：2007-09-20
申请号：US11680945
申请日：2007-03-01
申请人： Naoki YASUDA
发明人： Naoki YASUDA
IPC分类号： H01L29/76
CPC分类号： H01L29/513 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7881 , H01L29/792
摘要： A nonvolatile semiconductor memory device according to the embodiments of the invention includes a first insulating film on a channel, a floating gate electrode on the first insulating film, a second insulating film on the floating gate electrode, and a control gate electrode on the second insulating film. Each of the first and second insulating films comprises at least two layers, one layer directly in contact with the floating gate electrode is formed by an insulating material (A) including a metal element having a d-orbital, and the other at least one layer is formed by an insulating material (B) chiefly including one of a metal element without the d-orbital, and a semiconductor element.
摘要翻译：根据本发明实施例的非易失性半导体存储器件包括沟道上的第一绝缘膜，第一绝缘膜上的浮栅，浮栅上的第二绝缘膜，第二绝缘上的控制栅电极电影。第一和第二绝缘膜中的每一个包括至少两个层，与浮动栅电极直接接触的一个层由包括具有d轨道的金属元素的绝缘材料（A）形成，而另一个层由主要包括没有d轨道的金属元素之一的绝缘材料（B）和半导体元件形成。

12. 发明申请

US20130087845A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20130087845A1
公开(公告)日：2013-04-11
申请号：US13428185
申请日：2012-03-23
申请人： Naoki YASUDA
发明人： Naoki YASUDA
IPC分类号： H01L29/792 , H01L21/20
CPC分类号： H01L27/11582 , H01L21/28282 , H01L29/7926
摘要： According to one embodiment, a method of manufacturing a nonvolatile semiconductor memory device is provided. In the method, a conductive film serving as a control gate is formed above a substrate. A hole extending through the conductive film from its upper surface to its lower surface is formed. A block insulating film, a charge storage layer, a tunnel insulating film, and a semiconductor layer are formed on the inner surface of the hole. A film containing a material having an oxygen dissociation catalytic action is formed on the semiconductor layer not to fill the hole. The interface between the tunnel insulating film and the semiconductor layer is oxidized through the film from the inside of the hole.
摘要翻译：根据一个实施例，提供一种制造非易失性半导体存储器件的方法。在该方法中，在基板上形成用作控制栅极的导电膜。形成从其上表面到其下表面延伸穿过导电膜的孔。在孔的内表面上形成块绝缘膜，电荷存储层，隧道绝缘膜和半导体层。在不填充孔的半导体层上形成含有具有氧解离催化作用的材料的膜。隧道绝缘膜与半导体层之间的界面从孔的内部通过膜氧化。

13. 发明申请

US20100117136A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20100117136A1
公开(公告)日：2010-05-13
申请号：US12408796
申请日：2009-03-23
申请人： Naoki YASUDA
发明人： Naoki YASUDA
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/792 , H01L21/28282 , H01L21/76243 , H01L21/84 , H01L27/1203 , H01L29/0653 , H01L29/4234 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes a plurality of nonvolatile memory cells formed on a semiconductor substrate, each memory cell including source and drain regions separately formed on a surface portion of the substrate, buried insulating films formed in portions of the substrate that lie under the source and drain regions and each having a dielectric constant smaller than that of the substrate, a tunnel insulating film formed on a channel region formed between the source and drain regions, a charge storage layer formed of a dielectric body on the tunnel insulating film, a block insulating film formed on the charge storage layer, and a control gate electrode formed on the block insulating film.
摘要翻译：非易失性半导体存储器件包括形成在半导体衬底上的多个非易失性存储器单元，每个存储单元包括分别形成在衬底的表面部分上的源极和漏极区域，形成在衬底的位于源极的部分的掩埋绝缘膜漏极区和介电常数小于衬底的介电常数，形成在源极和漏极区之间的沟道区上形成的隧道绝缘膜，在隧道绝缘膜上由电介质体形成的电荷存储层，块形成在电荷存储层上的绝缘膜，以及形成在所述块绝缘膜上的控制栅电极。

14. 发明申请

US20100072539A1 MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
标题翻译：非易失性半导体存储器件的存储单元
公开(公告)号：US20100072539A1
公开(公告)日：2010-03-25
申请号：US12560035
申请日：2009-09-15
申请人： Naoki YASUDA
发明人： Naoki YASUDA
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/11568 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/792
摘要： A memory cell of a nonvolatile semiconductor memory device according to an embodiment of the invention has a MONOS structure. The charge storage layer of the memory cell includes insulating material layers. The relationship between the conduction band edge energy and valance band edge energy of the insulating material layers either increases gradually or decreases gradually from the tunnel insulating film toward the block insulating film. Furthermore, when the relative permittivity of the block insulating film is expresses as ∈r, an energy barrier between the charge storage layer and the block insulating film is equal to or larger than 4.5 ∈r−2/3 (eV) and is equal to or smaller than 3.8 (eV).
摘要翻译：根据本发明实施例的非易失性半导体存储器件的存储单元具有MONOS结构。存储单元的电荷存储层包括绝缘材料层。绝缘材料层的导带边缘能量与价带边缘能量之间的关系从隧道绝缘膜向块绝缘膜逐渐增加或逐渐减小。此外，当块绝缘膜的相对介电常数表示为εr时，电荷存储层和块绝缘膜之间的能量势垒等于或大于4.5∈r-2/3（eV），并且等于或小于3.8（eV）。

15. 发明申请

US20130062685A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
公开(公告)号：US20130062685A1
公开(公告)日：2013-03-14
申请号：US13428111
申请日：2012-03-23
申请人： Naoki YASUDA , Masaru Kito
发明人： Naoki YASUDA , Masaru Kito
IPC分类号： H01L29/792
CPC分类号： H01L27/1157 , H01L21/28282 , H01L27/11568 , H01L27/11573 , H01L27/11582 , H01L29/511 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/792 , H01L29/7926
摘要： According to one embodiment, a control gate is formed on the semiconductor substrate and includes a cylindrical through hole. A block insulating film, a charge storage film, a tunnel insulating film, and a semiconductor layer are formed on a side surface of the control gate inside the through hole. The tunnel insulating film comprises a first insulating film having SiO2 as a base material and containing an element that lowers a band gap of the base material by being added. A density and a density gradient of the element monotonously increase from the semiconductor layer toward the charge storage film.

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