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11. 发明申请

US20120068250A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068250A1
公开(公告)日：2012-03-22
申请号：US13235970
申请日：2011-09-19
申请人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
发明人： Tsunehiro Ino , Masao Shingu , Shosuke Fujii , Akira Takashima , Daisuke Matsushita , Jun Fujiki , Naoki Yasuda , Yasushi Nakasaki , Koichi Muraoka
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/513 , H01L21/28282 , H01L27/11568 , H01L29/517 , H01L29/66833 , H01L29/792
摘要： According to one embodiment, a semiconductor device includes a semiconductor region, a tunnel insulating film provided on the semiconductor region, a charge storage insulating film provided on the tunnel insulating film and having a hafnium oxide including a cubic region, a block insulating film provided on the charge storage insulating film, and a control gate electrode provided on the block insulating film.
摘要翻译：根据一个实施例，半导体器件包括半导体区域，设置在半导体区域上的隧道绝缘膜，设置在隧道绝缘膜上并具有包含立方体区域的氧化铪的电荷存储绝缘膜，设置在电荷存储绝缘膜和设置在块绝缘膜上的控制栅电极。

12. 发明授权

US07956405B2 Semiconductor storage element and manufacturing method thereof 有权
标题翻译：半导体存储元件及其制造方法
公开(公告)号：US07956405B2
公开(公告)日：2011-06-07
申请号：US12404648
申请日：2009-03-16
申请人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
发明人： Tsunehiro Ino , Shosuke Fujii , Jun Fujiki , Akira Takashima , Masao Shingu , Daisuke Matsushita , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/792 , H01L29/517 , H01L29/66833
摘要： A semiconductor storage element includes: a source region and a drain region provided in a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate between the source region and the drain region; a charge storage film provided on the tunnel insulating film; a block insulating film provided on the charge storage film; a gate electrode provided on the block insulating film; and a region containing a gas molecule, the region provided in a neighborhood of an interface between the charge storage film and the block insulating film.
摘要翻译：半导体存储元件包括：设置在半导体衬底中的源极区域和漏极区域; 设置在所述源极区域和所述漏极区域之间的所述半导体衬底上的隧道绝缘膜; 设置在隧道绝缘膜上的电荷存储膜; 设置在电荷存储膜上的块状绝缘膜; 设置在所述块绝缘膜上的栅电极; 以及包含气体分子的区域，所述区域设置在电荷存储膜和块绝缘膜之间的界面附近。

13. 发明授权

US07821059B2 Semiconductor device and method for manufacturing a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07821059B2
公开(公告)日：2010-10-26
申请号：US12234197
申请日：2008-09-19
申请人： Masao Shingu , Shoko Kikuchi , Akira Takashima , Tsunehiro Ino , Koichi Muraoka
发明人： Masao Shingu , Shoko Kikuchi , Akira Takashima , Tsunehiro Ino , Koichi Muraoka
IPC分类号： H01L21/8247 , H01L29/788 , H01L29/792 , H01L29/78 , H01L27/115
CPC分类号： H01L29/792 , H01L21/28282 , H01L21/31604 , H01L29/513 , H01L29/517 , H01L29/66833
摘要： In a semiconductor device, the side walls are made of SiO2, SiN or SiON, and the top insulating film or gate insulating film is made of an oxide including Al, Si, and metal element M so that the number ratio Si/M is set to no less than a number ratio Si/M at a solid solubility limit of SiO2 composition in a composite oxide including metal element M and Al and set to no more than a number ratio Si/M at the condition that the dielectric constant is equal to the dielectric constant of Al2O3 and so that the number ratio Al/M is set to no less than a number ratio Al/M where the crystallization of an oxide of said metal element M is suppressed due to the Al element and set to no more than a number ratio Al/M where the crystallization of the Al2O3 is suppressed due to the metal element M.
摘要翻译：在半导体器件中，侧壁由SiO 2，SiN或SiON制成，并且顶部绝缘膜或栅极绝缘膜由包括Al，Si和金属元素M的氧化物制成，使得Si / M的数量比设定在包含金属元素M和Al的复合氧化物中SiO 2组成的固溶度极限的Si / M的数量比不小于Si / M，在介电常数等于 Al 2 O 3的介电常数和Al / M的数量比被设定为不小于Al / M的数量比，其中所述金属元素M的氧化物的结晶由于Al元素而被抑制，并且设定为不大于由于金属元素M而抑制了Al 2 O 3的结晶化的数值比Al / M

14. 发明申请

US20080121979A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080121979A1
公开(公告)日：2008-05-29
申请号：US11846251
申请日：2007-08-28
申请人： Yukie NISHIKAWA , Akira Takashima , Koichi Muraoka
发明人： Yukie NISHIKAWA , Akira Takashima , Koichi Muraoka
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes: a tunneling insulating film; a floating gate electrode; an inter-electrode insulating film, in which an interface facing the floating gate electrode and an interface facing a control gate electrode are defined as the first interface and the second interface, respectively; and a control gate electrode. The inter-electrode insulating film includes one or more first elements selected from rare earth elements, one or more second elements selected from Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first element, which is defined as the number of atoms of the first element divided by that of the second element, is changed between the first interface and the second interface, and the composition ratio in the vicinity of the first interface is lower than that in the vicinity of the second interface.
摘要翻译：非易失性半导体存储器件包括：隧道绝缘膜; 浮栅电极; 分别将面对浮置栅极的界面和面对控制栅电极的界面分别定义为第一界面和第二界面的电极间绝缘膜; 和控制栅电极。电极间绝缘膜包括选自稀土元素，选自Al，Ti，Zr，Hf，Ta，Mg，Ca，Sr和Ba中的一种或多种第二元素和氧的一种或多种第一元素。被定义为第一元素的原子数除以第二元素的原子数的第一元素的组成比在第一界面和第二界面之间改变，并且第一界面附近的组成比低于第二界面附近的位置。

15. 发明授权

US07804128B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US07804128B2
公开(公告)日：2010-09-28
申请号：US12199036
申请日：2008-08-27
申请人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
发明人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
IPC分类号： H01L21/8247 , H01L29/788 , H01L29/792 , H01L27/115
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/513 , H01L29/517
摘要： A nonvolatile semiconductor memory device according to an example of the present invention includes a semiconductor region, source/drain areas arranged separately in the semiconductor region, a tunnel insulating film arranged on a channel region between the source/drain areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulating film arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulating film. The inter-electrode insulating film includes La, Al and Si.
摘要翻译：根据本发明实施例的非易失性半导体存储器件包括半导体区域，在半导体区域中单独布置的源极/漏极区域，布置在源极/漏极区域之间的沟道区域上的隧道绝缘膜，布置成在隧道绝缘膜上，布置在浮栅电极上的电极间绝缘膜和布置在电极间绝缘膜上的控制栅电极。电极间绝缘膜包括La，Al和Si。

16. 发明授权

US07902588B2 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07902588B2
公开(公告)日：2011-03-08
申请号：US11846251
申请日：2007-08-28
申请人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
发明人： Yukie Nishikawa , Akira Takashima , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L27/115 , H01L27/11521 , H01L29/42336 , H01L29/513
摘要： A nonvolatile semiconductor memory device includes: a tunneling insulating film; a floating gate electrode; an inter-electrode insulating film, in which an interface facing the floating gate electrode and an interface facing a control gate electrode are defined as the first interface and the second interface, respectively; and a control gate electrode. The inter-electrode insulating film includes one or more first elements selected from rare earth elements, one or more second elements selected from Al, Ti, Zr, Hf, Ta, Mg, Ca, Sr and Ba, and oxygen. A composition ratio of the first element, which is defined as the number of atoms of the first element divided by that of the second element, is changed between the first interface and the second interface, and the composition ratio in the vicinity of the first interface is lower than that in the vicinity of the second interface.
摘要翻译：非易失性半导体存储器件包括：隧道绝缘膜; 浮栅电极; 分别将面对浮置栅极的界面和面对控制栅电极的界面分别定义为第一界面和第二界面的电极间绝缘膜; 和控制栅电极。电极间绝缘膜包括选自稀土元素，选自Al，Ti，Zr，Hf，Ta，Mg，Ca，Sr和Ba中的一种或多种第二元素和氧的一种或多种第一元素。被定义为第一元素的原子数除以第二元素的原子数的第一元素的组成比在第一界面和第二界面之间改变，并且第一界面附近的组成比低于第二界面附近的位置。

17. 发明授权

US07736446B2 Method for manufacturing a lanthanum oxide compound 有权
标题翻译：氧化镧化合物的制造方法
公开(公告)号：US07736446B2
公开(公告)日：2010-06-15
申请号：US12051286
申请日：2008-03-19
申请人： Akira Takashima , Koichi Muraoka
发明人： Akira Takashima , Koichi Muraoka
IPC分类号： C23C16/40
CPC分类号： C23C14/08 , C23C14/24 , C23C14/50 , C23C14/564 , H01L21/31604 , H01L21/31641 , H01L21/31645
摘要： A method for manufacturing a lanthanum oxide compound on a substrate includes: setting the number of H2O molecule, the number of CO molecule and the number of CO2 molecule to one-half or less, one-fifth or less and one-tenth or less per one lanthanum atom, respectively, the H2O molecule, the CO molecule and the CO2 molecule being originated from an H2O gas component, a CO gas component and a CO2 gas component in an atmosphere under manufacture; and supplying a metal raw material containing at least one selected from the group consisting of lanthanum, aluminum, titanium, zirconium and hafnium and an oxygen raw material gas simultaneously for the substrate under the condition that the number of O2 molecule are set to 20 or more per one lanthanum atom, thereby manufacturing the lanthanum oxide compound on the substrate.
摘要翻译：在基材上制造氧化镧化合物的方法包括：将H 2 O分子的数量，CO分子的数目和CO 2分子的数量设定为每分钟的一半以下，五分之一以下，十分之一以下一个镧原子分别来自制造气氛中的H 2 O分子，CO分子和CO 2分子源自H 2 O气体组分，CO气体组分和CO 2气体组分; 在氧分子数为20以上的条件下，向基板供给含有选自镧，铝，钛，锆，铪和氧原料气体中的至少一种的金属原料每一个镧原子，从而在基底上制造氧化镧化合物。

18. 发明授权

US07842996B2 Memory cell of nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器的存储单元
公开(公告)号：US07842996B2
公开(公告)日：2010-11-30
申请号：US12142373
申请日：2008-06-19
申请人： Shoko Kikuchi , Akira Takashima , Naoki Yasuda , Koichi Muraoka
发明人： Shoko Kikuchi , Akira Takashima , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.
摘要翻译：非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

19. 发明申请

US20090206393A1 NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20090206393A1
公开(公告)日：2009-08-20
申请号：US12388040
申请日：2009-02-18
申请人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
发明人： Keiko Ariyoshi , Akira Takashima , Shoko Kikuchi , Koichi Muraoka
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L29/40117 , H01L29/4234 , H01L29/513
摘要： A nonvolatile memory element includes a semiconductor region, a source region and a drain region provided in the semiconductor region, a tunnel insulating layer provided on the semiconductor region between the source region and the drain region, a charge storage layer provided on the tunnel insulating layer, a block insulating layer provided on the charge storage layer, and a control gate electrode provided on the block insulating layer. The charge storage layer includes one of an oxide, a nitride and an oxynitride, which contains at least one material selected from the group consisting of Hf, Al, Zr, Ti and a rare-earth metal, and is entirely or partially crystallized. The block insulating layer includes one of an oxide, an oxynitride, a silicate and an aluminate, which contains at least one rare-earth metal.
摘要翻译：非易失性存储元件包括设置在半导体区域中的半导体区域，源极区域和漏极区域，设置在源极区域和漏极区域之间的半导体区域上的隧道绝缘层，设置在隧道绝缘层上的电荷存储层设置在电荷存储层上的块绝缘层和设置在块绝缘层上的控制栅电极。电荷存储层包括氧化物，氮化物和氧氮化物中的一种，其含有选自Hf，Al，Zr，Ti和稀土金属中的至少一种材料，并且完全或部分结晶。该块绝缘层包含含有至少一种稀土金属的氧化物，氮氧化物，硅酸盐和铝酸盐中的一种。

20. 发明申请

US20080315288A1 MEMORY CELL OF NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器的存储单元
公开(公告)号：US20080315288A1
公开(公告)日：2008-12-25
申请号：US12142373
申请日：2008-06-19
申请人： Shoko KIKUCHI , Akira Takashima , Naoki Yasuda , Koichi Muraoka
发明人： Shoko KIKUCHI , Akira Takashima , Naoki Yasuda , Koichi Muraoka
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/513
摘要： A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.
摘要翻译：非易失性半导体存储器的存储单元包括半导体区域，在半导体区域中彼此分开排列的源极/漏极区域，布置在扩散区域之间的沟道区域上的隧道绝缘膜，布置在隧道绝缘层上的浮置栅电极布置在浮置栅电极上的电极间绝缘体和布置在电极间绝缘体上的控制栅电极。电极间绝缘体包含镧系金属Ln，铝Al和氧O，镧系金属与铝之间的组成比Ln /（Al + Ln）为0.33〜0.39的范围。

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