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11. 发明申请

US20050046474A1 Amplifier and radio frequency power amplifier using the same 失效
标题翻译：放大器和射频功率放大器使用相同
公开(公告)号：US20050046474A1
公开(公告)日：2005-03-03
申请号：US10922146
申请日：2004-08-20
申请人： Hidetoshi Matsumoto , Tomonori Tanoue , Masami Ohnishi
发明人： Hidetoshi Matsumoto , Tomonori Tanoue , Masami Ohnishi
IPC分类号： H03F3/20 , H03F1/02 , H03F1/32 , H03F3/19 , H03F3/38 , H04B1/04
CPC分类号： H03F1/0227 , H03F2200/432
摘要： An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC-DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC-DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.
摘要翻译：提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。

12. 发明授权

US07589588B2 High-frequency power amplifier and radio communication equipment using the same 有权
标题翻译：高频功率放大器和无线电通信设备使用相同
公开(公告)号：US07589588B2
公开(公告)日：2009-09-15
申请号：US11439990
申请日：2006-05-25
申请人： Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
发明人： Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
IPC分类号： H03F1/14
CPC分类号： H03F1/565 , H03F3/189 , H03F3/68
摘要： A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.
摘要翻译：一种高频功率放大器，包括：并联布置的多个功率放大器; 电感元件串联插入所述各功率放大器的输入信号线; 输入匹配电路，用于并行连接所述功率放大器和所述电感元件的每个串联连接的并联连接的输入的匹配; 输出匹配电路，用于执行并联连接的输出的匹配; 以及控制单元，用于以使得所述功率放大器中的一个总是处于操作状态并且所述功率放大器的其余部分进入操作或非操作状态的方式来控制所述功率放大器。

13. 发明申请

US20070176687A1 High frequency power amplifier 失效
标题翻译：高频功率放大器
公开(公告)号：US20070176687A1
公开(公告)日：2007-08-02
申请号：US11209692
申请日：2005-08-24
申请人： Tomonori Tanoue , Masami Ohnishi , Hidetoshi Matsumoto , Akira Kuriyama
发明人： Tomonori Tanoue , Masami Ohnishi , Hidetoshi Matsumoto , Akira Kuriyama
IPC分类号： H03F3/04
CPC分类号： H03F3/191 , H03F1/26 , H03F3/24 , H03F3/45085 , H03F2200/09 , H03F2200/315 , H03F2200/318 , H03F2200/372 , H03F2200/391 , H03F2203/45638 , H03G1/0023 , H03G3/3042
摘要： Disclosed is a power amplifier having highly stable and excellent controllability, and having low noise in comparison with conventional power amplifiers. With the power amplifier, a differential amplifier made up of transistors Q1, Q2 is provided in the initial stage thereof, and baluns doubling as inter-stage matching circuits, comprised of Cp1, Cp2, Lp1, and Ct1, Ct2, Lt1, respectively, are provided between the initial stage, and a second stage while an unbalanced single-ended circuit is provided in the second stage. The differential amplifier has an emitter-coupled type configuration for coupling both emitters with each other, and output control of the amplifier in the initial stage is executed by varying current of a current source coupled to both the emitters.
摘要翻译：公开了具有高度稳定和优异的可控性的功率放大器，并且与常规功率放大器相比具有低噪声。使用功率放大器，在其初始阶段提供由晶体管Q 1，Q 2组成的差分放大器，并且平衡 - 不平衡变换器作为由Cp 1，Cp 2，Lp 1和Ct 1组成的级间匹配电路， Ct 2，Lt 1分别设置在初级和第二级之间，而在第二级提供不平衡单端电路。差分放大器具有用于将两个发射极彼此耦合的发射极耦合型配置，并且通过改变耦合到两个发射极的电流源的电流来执行初始阶段放大器的输出控制。

14. 发明申请

US20060267684A1 High-frequency power amplifier and radio communication equipment using the same 有权
公开(公告)号：US20060267684A1
公开(公告)日：2006-11-30
申请号：US11439990
申请日：2006-05-25
申请人： Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
发明人： Masami Ohnishi , Tomonori Tanoue , Hidetoshi Matsumoto
IPC分类号： H03F1/14 , H03F3/68
CPC分类号： H03F1/565 , H03F3/189 , H03F3/68
摘要： A high-frequency power amplifier comprising: a plurality of power amplifiers arranged in parallel; an inductance element inserted in series in an input signal line of said each power amplifier; an input matching circuit for performing matching of inputs of a parallel connection which connected each series connection of said power amplifier and said inductance element in parallel; an output matching circuit for performing matching of outputs of the parallel connection; and a control unit for controlling said power amplifiers in such a manner that one of said power amplifiers is always brought to an operation condition and the remainder of said power amplifiers are brought to an operation or non-operation condition.

15. 发明授权

US07123087B2 Radio frequency power amplifier 有权
标题翻译：射频功率放大器
公开(公告)号：US07123087B2
公开(公告)日：2006-10-17
申请号：US11230467
申请日：2005-09-21
申请人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
发明人： Masami Ohnishi , Hidetoshi Matsumoto , Tomonori Tanoue , Osamu Kagaya , Kenji Sekine
IPC分类号： H03F3/68
CPC分类号： H03F1/56 , H03F1/0277 , H03F1/565 , H03F3/602 , H03F3/72 , H03F2203/7209
摘要： The present invention provides a radio frequency power amplifier which may not introduce radio frequency loss during switching power amplifier units between high and low output power levels. By connecting a first-stage matching network M12 and first-stage matching network M13 to respective output nodes of a power amplifier unit A11 and power amplifier unit A12 that either one operate by switching, connecting the output nodes of the first-stage matching network M12 and M13 in parallel, connecting a last-stage matching network M11 between the junction of M12 and M13 and the output terminal OUT, the first-stage matching networks M12, M13, and last-stage matching network M11 are formed, for both power amplifier units A11 and A12, so that impedance matching is established between the output terminal OUT and the power amplifier unit in operation when one unit is in operation the other is in stop of operation. The present invention allows switching from one power amplifier unit to the other without the need of a radio frequency switch.
摘要翻译：本发明提供一种射频功率放大器，其可以在高输出功率级和低输出功率级之间的开关功率放大器单元期间不会引入射频损耗。通过将第一级匹配网络M 12和第一级匹配网络M 13连接到功率放大器单元A11和功率放大器单元A12的相应输出节点，功率放大器单元A 11和功率放大器单元A 12通过切换操作，连接第一级匹配网络在M12和M13的连接点与输出端子OUT，第一级匹配网络M 12，M 13以及最后一级匹配网络M12之间连接最后一级匹配网络M 11，对于功率放大器单元A 11和A 12两者形成级匹配网络M 11，使得当一个单元在操作中另一个处于停止操作时在输出端子OUT和功率放大器单元之间建立阻抗匹配。本发明允许从一个功率放大器单元切换到另一个，而不需要射频切换。

16. 发明授权

US07482875B2 High frequency power amplifier 失效
标题翻译：高频功率放大器
公开(公告)号：US07482875B2
公开(公告)日：2009-01-27
申请号：US11209691
申请日：2005-08-24
申请人： Tomonori Tanoue , Masami Ohnishi
发明人： Tomonori Tanoue , Masami Ohnishi
IPC分类号： H03F3/04
CPC分类号： H03F1/26 , H01L2924/0002 , H03F1/42 , H03F3/04 , H03F3/195 , H03F2200/36 , H01L2924/00
摘要： The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about 2/3 times an input impedance of the amplification unit.
摘要翻译：本发明提供了宽带，低噪声，小尺寸的高频功率放大器，其具有较小的增益温度依赖性，输入匹配性优异。由电阻强烈依赖于温度的电阻和常规电阻构成的并联电路串联插入到放大单元的输入匹配电路中的信号路径中，并且电阻器的电阻被设置为适当的值，例如约2 / 3倍于放大单元的输入阻抗。

17. 发明申请

US20060066406A1 High frequency power amplifier 失效
公开(公告)号：US20060066406A1
公开(公告)日：2006-03-30
申请号：US11209691
申请日：2005-08-24
申请人： Tomonori Tanoue , Masami Ohnishi
发明人： Tomonori Tanoue , Masami Ohnishi
IPC分类号： H03F3/04
CPC分类号： H03F1/26 , H01L2924/0002 , H03F1/42 , H03F3/04 , H03F3/195 , H03F2200/36 , H01L2924/00
摘要： The invention provides a wide-band, low-noise, and small-sized high frequency power amplifier that has small temperature dependence of the gain and is excellent in input matching. A parallel circuit consisting of a resistor whose resistance depends strongly on temperature and a conventional resistor is inserted serially into a signal path in an input matching circuit of an amplification unit, and resistances of the resistors are set to appropriate values, for example, about ⅔ times an input impedance of the amplification unit.

18. 发明授权

US06674323B2 High frequency power amplifier, high frequency power amplifier module, and portable telephone 有权
标题翻译：高频功率放大器，高频功率放大器模块和便携式电话
公开(公告)号：US06674323B2
公开(公告)日：2004-01-06
申请号：US10192589
申请日：2002-07-11
申请人： Osamu Kagaya , Masami Ohnishi , Kenji Sekine , Tomonori Tanoue
发明人： Osamu Kagaya , Masami Ohnishi , Kenji Sekine , Tomonori Tanoue
IPC分类号： H03F114
CPC分类号： H03F3/602 , H03F1/0277 , H03F1/302 , H03F1/56 , H03F3/195 , H03F3/245 , H03F3/72 , H03F2200/111 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2200/429 , H03F2200/555 , H03F2203/7206 , H03F2203/7215 , H03F2203/7221 , H03F2203/7231 , H03F2203/7236
摘要： To provide a small-sized high frequency power amplifier for preventing oscillation by a small number of switching circuits and outputting high power and low power with high efficiencies, a high frequency power amplifier module and a portable telephone, the high frequency power amplifier is constituted by an amplifying circuit A and an amplifying circuit B connected in parallel, a size of a transistor at an output stage of the amplifying circuit B is made to be equal to or smaller than ¼ of a size of a transistor of an output stage of the amplifying circuit A and a switching circuit is connected between a signal line forward from the output stage of the amplifying circuit A and a ground terminal.
摘要翻译：为了提供一种小型高频功率放大器，用于防止少量开关电路的振荡并以高效率输出高功率和低功率，高频功率放大器模块和便携式电话，高频功率放大器由放大电路A和放大电路B并联连接，将放大电路B的输出级的晶体管的尺寸设定为放大电路的输出级的晶体管的尺寸的1/4 电路A和开关电路连接在从放大电路A的输出级向前方的信号线与接地端子之间。

19. 发明授权

US07756494B2 RF power amplifier 有权
标题翻译：射频功率放大器
公开(公告)号：US07756494B2
公开(公告)日：2010-07-13
申请号：US11764511
申请日：2007-06-18
申请人： Toru Fujioka , Toshihiko Shimizu , Masami Ohnishi , Hidetoshi Matsumoto , Satoshi Tanaka
发明人： Toru Fujioka , Toshihiko Shimizu , Masami Ohnishi , Hidetoshi Matsumoto , Satoshi Tanaka
IPC分类号： H01Q11/12
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的最终级放大功率器件的第一和第二放大器Q1和Q2。放大器Q1和Q2形成在一个半导体芯片上。放大器Q1的第一偏置电压Vg1被设置为高于放大器Q2的第二偏置电压Vg2，使得放大器Q1在B类和AB之间工作，并且Q2在C类中可操作。第一有效器件尺寸放大器Q1的Wgq1被有意地设置为小于放大器Q2的第二有效器件尺寸Wgq2超过半导体芯片的制造误差的范围。无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。

20. 发明申请

US20070298736A1 RF POWER AMPLIFIER 有权
标题翻译：射频功率放大器
公开(公告)号：US20070298736A1
公开(公告)日：2007-12-27
申请号：US11764511
申请日：2007-06-18
申请人： Toru FUJIOKA , Toshihiko Shimizu , Masami Ohnishi , Hidetoshi Matsumoto , Satoshi Tanaka
发明人： Toru FUJIOKA , Toshihiko Shimizu , Masami Ohnishi , Hidetoshi Matsumoto , Satoshi Tanaka
IPC分类号： H01Q11/12 , H04B1/04
CPC分类号： H03G3/004 , H03F1/02 , H03F1/0266 , H03F1/0277 , H03F1/0288 , H03F3/195 , H03F3/211 , H03F3/24 , H03F2200/108 , H03F2200/181 , H03F2200/432 , H03F2200/451 , H03F2200/456 , H04B2001/045
摘要： The RF power amplifier includes first and second amplifiers Q1 and Q2 as final-stage amplification power devices connected in parallel between an input terminal RF_In and an output terminal RF_Out. The amplifiers Q1 and Q2 are formed on one semiconductor chip. The first bias voltage Vg1 of the amplifier Q1 is set to be higher than the second bias voltage Vg2 of the amplifier Q2 so that the amplifier Q1 is operational between Class B and AB, and Q2 is operational in Class C. The first effective device size Wgq1 of the amplifier Q1 is intentionally set to be smaller than the second effective device size Wgq2 of the amplifier Q2 beyond a range of a manufacturing error of the semiconductor chip. An RF power amplifier that exhibits a high power-added efficiency characteristic regardless of whether the output power is High or Low can be materialized.
摘要翻译： RF功率放大器包括作为在输入端子RF_In和输出端子RF_Out之间并联连接的终端放大功率器件的第一和第二放大器Q 1和Q 2。放大器Q 1和Q 2形成在一个半导体芯片上。放大器Q 1的第一偏置电压Vg1被设置为高于放大器Q 2的第二偏置电压Vg 2，使得放大器Q 1在B类和AB之间工作，并且Q 2在C类中可操作放大器Q 1的第一有效器件尺寸Wgq1被有意地设置为小于放大器Q 2的第二有效器件尺寸Wgq 2超过半导体芯片的制造误差的范围。无论输出功率是高还是低，都能实现具有高功率附加效率特性的RF功率放大器。

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