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11. 发明申请

US20070284338A1 Chemical mechanical polishing method 审中-公开
标题翻译：化学机械抛光方法
公开(公告)号：US20070284338A1
公开(公告)日：2007-12-13
申请号：US11808148
申请日：2007-06-07
申请人： Yukiteru Matsui , Takatoshi Ono
发明人： Yukiteru Matsui , Takatoshi Ono
IPC分类号： H01L21/461 , C03C15/00 , H01L21/302
CPC分类号： H01L21/31053 , B24B37/26
摘要： A chemical mechanical polishing method includes bringing a body to be polished into contact with a polishing pad mounted on a rotating polishing table while feeding a polishing slurry to the polishing pad. The polishing pad is formed of a laminate comprising a first pad layer in contact with the body, and a second pad layer positioned on a side of the polishing table with a water-proof film being interposed therebetween wherein the first pad layer is provided with a pad-cooling hole reaching the second pad layer and the second pad layer is provided with a cooling trench radially disposed to interconnect with the pad-cooling hole. The polishing slurry is fed to a surface of the first pad layer to polish the body, while permitting part of the polishing slurry to pass through the pad-cooling hole to the cooling trench.
摘要翻译：一种化学机械抛光方法，包括使研磨体与抛光垫相接触，并将其抛光到抛光垫上。抛光垫由包括与主体接触的第一焊盘层的层压体形成，以及位于抛光台侧面上的防水膜的第二焊盘层，其中第一焊盘层设置有到达第二焊盘层的焊盘冷却孔和第二焊盘层设置有径向设置以与焊盘冷却孔互连的冷却沟槽。抛光浆料被供给到第一垫层的表面以抛光主体，同时允许抛光浆料的一部分通过焊盘冷却孔通向冷却槽。

12. 发明授权

US07052620B2 Polishing slurry for aluminum-based metal, and method of manufacturing semiconductor device 失效
公开(公告)号：US07052620B2
公开(公告)日：2006-05-30
申请号：US10378994
申请日：2003-03-05
申请人： Yukiteru Matsui , Gaku Minamihaba
发明人： Yukiteru Matsui , Gaku Minamihaba
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/00
摘要： A polishing slurry for an aluminum-based metal includes an oxidizing agent having a standard electrode potential of 1.7 V or more, amino acid or amino acid compound, and bi- or higher than bi-valent aromatic carboxylic acid having a carbocycle or a heterocycle.

13. 发明授权

US06875088B2 Polishing member and method of manufacturing semiconductor device 有权
标题翻译：抛光件及半导体器件的制造方法
公开(公告)号：US06875088B2
公开(公告)日：2005-04-05
申请号：US10619480
申请日：2003-07-16
申请人： Yukiteru Matsui , Hiroyuki Yano
发明人： Yukiteru Matsui , Hiroyuki Yano
IPC分类号： B24B37/00 , B24B37/20 , B24B37/24 , B24D3/00 , B24D3/28 , B24D3/34 , H01L21/304 , H01L21/321 , B24B1/00
CPC分类号： B24B37/24 , B24D3/28 , B24D3/346 , H01L21/3212
摘要： There is provide a polishing member including photocatalyst particles that exhibit photocatalysis on light irradiation, and a support material that supports the photocatalyst particles. There is also provided a method of manufacturing a semiconductor device, including polishing a surface of a workpiece that is to be used as at least a portion of the semiconductor device with the polishing member with a fluid interposed between the polishing member and the surface of the workpiece while performing light irradiation onto the polishing member.
摘要翻译：提供了包括在光照射下显示光催化的光催化剂颗粒的抛光构件和支撑光催化剂颗粒的载体材料。还提供了一种制造半导体器件的方法，包括用抛光元件抛光被用作至少一部分半导体器件的工件的表面与抛光元件之间的流体，该流体介于抛光元件和抛光元件的表面之间同时对抛光部件进行光照射。

14. 发明申请

US20050037693A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
公开(公告)号：US20050037693A1
公开(公告)日：2005-02-17
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , B24B1/00
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

15. 发明申请

US20050003743A1 Slurry for CMP, polishing method and method of manufacturing semiconductor device 审中-公开
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US20050003743A1
公开(公告)日：2005-01-06
申请号：US10844441
申请日：2004-05-13
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , B24B1/00
CPC分类号： C09K3/1409 , B24B37/044 , C09G1/02
摘要： There is disclosed a CMP slurry comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles, the CMP slurry having a viscosity of less than 10 mPas.
摘要翻译：公开了包含由树脂组分和无机组分组成的复合型颗粒彼此复合的CMP浆料和具有小于10mPa·s粘度的CMP浆料的树脂颗粒。

16. 发明授权

US08685857B2 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device 有权
标题翻译：有机薄膜的化学机械抛光方法及制造半导体器件的方法
公开(公告)号：US08685857B2
公开(公告)日：2014-04-01
申请号：US12289326
申请日：2008-10-24
申请人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
发明人： Yukiteru Matsui , Gaku Minamihaba , Yoshikuni Tateyama , Hiroyuki Yano , Atsushi Shigeta
IPC分类号： H01L21/304 , B44C1/22
CPC分类号： H01L21/76808 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L27/10867
摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.
摘要翻译：公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm，具有亲水性部分的表面活性剂。

17. 发明申请

US20110076833A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110076833A1
公开(公告)日：2011-03-31
申请号：US12781393
申请日：2010-05-17
申请人： Hajime Eda , Yukiteru Matsui , Atsushi Shigeta , Takatoshi Ono , Satoko Seta
发明人： Hajime Eda , Yukiteru Matsui , Atsushi Shigeta , Takatoshi Ono , Satoko Seta
IPC分类号： H01L21/762 , H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3081 , H01L21/76224
摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.
摘要翻译：在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

18. 发明申请

US20090124076A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090124076A1
公开(公告)日：2009-05-14
申请号：US12262439
申请日：2008-10-31
申请人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Masako Kinoshita , Seiro Miyoshi , Yoshikuni Tateyama , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/4763
CPC分类号： H01L21/02118 , C09G1/02 , H01L21/022 , H01L21/02282 , H01L21/31058 , H01L21/31144 , H01L21/312 , H01L21/76808 , H01L21/76811 , H01L21/76835
摘要： A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.
摘要翻译：提供了一种制造半导体器件的方法，该方法包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂覆膜，在第一温度下烘烤该涂膜其不能实现有机成分的交联以获得有机膜前体，使用含有树脂颗粒的浆料将有机膜前体抛光以在凹槽中离开有机膜前体，在第二温度下烘烤左有机膜前体高于第一温度以除去溶剂以获得嵌入在凹部中的第一有机膜，在绝缘膜上形成第二有机膜，从而获得下面的膜，在基底膜上连续形成中间层和抗蚀剂膜并对抗蚀剂膜进行图案曝光。

19. 发明授权

US07459398B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07459398B2
公开(公告)日：2008-12-02
申请号：US11170173
申请日：2005-06-30
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： C11D7/32
CPC分类号： H01L21/76835 , C09G1/02 , H01L21/31053 , H01L21/31058 , H01L21/31144 , H01L21/3212 , H01L21/76808 , H01L21/76829 , H01L21/7684
摘要： Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and a second polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature.
摘要翻译：本发明公开了一种包含磨粒的CMP浆料和包含HLB值在室温下为3至9的第一聚醚型非离子表面活性剂和HLB值为10至20的第二聚醚型非离子表面活性剂的混合表面活性剂在室温下。

20. 发明申请

US20070224760A1 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20070224760A1
公开(公告)日：2007-09-27
申请号：US11708532
申请日：2007-02-21
申请人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
发明人： Yukiteru Matsui , Shinichi Hirasawa , Atsushi Shigeta , Kiyotaka Miyano , Takeshi Nishioka , Hiroyuki Yano
IPC分类号： H01L21/336
CPC分类号： H01L27/11543 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L27/11526
摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.
摘要翻译：提供一种制造半导体器件的方法。该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

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