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    • 19. 发明申请
    • Semiconductor memory device, and read method and read circuit for the same
    • 半导体存储器件,以及读取方法和读取电路相同
    • US20080008007A1
    • 2008-01-10
    • US11783799
    • 2007-04-12
    • Toshiki Mori
    • Toshiki Mori
    • G11C8/08G11C11/34G11C8/10
    • G11C16/24G11C16/28
    • In a semiconductor memory device operative to discharge residual charge in a read bit line in a read cycle, the bit line is in the reset state at all times except during read operation. The reset state of a bit line is canceled when selected and connected to a read circuit for read, and information stored in a selected memory cell is read via the selected bit line. Upon completion of the read of the memory cell, the selected bit line is disconnected from the read circuit and reset to thereby complete discharge of residual charge in the read bit line prior to read operation in the next cycle. This ensures that during read determination operation in the next read cycle, the potential of a selected bit line will not vary with the bit line residual discharge in the previous read cycle.
    • 在可读取周期中对读取位线中剩余电荷进行放电的半导体存储器件中,除了读取操作之外,位线始终处于复位状态。 当选择并且连接到读取电路进行读取时,位线的复位状态被取消,并且通过所选择的位线读取存储在所选存储单元中的信息。 在完成存储单元的读取之后,所选择的位线与读取电路断开连接并重置,从而在下一个周期的读取操作之前完成读取位线中的剩余电荷的放电。 这确保了在下一个读取周期的读取确定操作期间,所选位线的电位将不会随先前读取周期中的位线残留放电而变化。