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11. 发明授权

US07736748B2 Insulating-film-forming composition, method of producing the same, silica-based insulating film, and method of forming the same 失效
标题翻译：绝缘膜形成用组合物及其制造方法，二氧化硅系绝缘膜及其形成方法
公开(公告)号：US07736748B2
公开(公告)日：2010-06-15
申请号：US11580959
申请日：2006-10-16
申请人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
发明人： Masahiro Akiyama , Hisashi Nakagawa , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： B32B27/00 , B32B9/04 , C08L83/00 , C08G77/04
CPC分类号： C08L83/14 , C08G77/50 , C08G77/60 , C09D183/14 , H01B3/30 , H01L21/02126 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/3121 , Y10T428/31663
摘要： An insulating-film-forming composition including an organic solvent and a hydrolysis-condensation product which is obtained by hydrolysis and condensation of a component (A) in the presence of a component (B).
摘要翻译：一种绝缘膜形成组合物，其包含通过在（B）成分的存在下水解和缩合组分（A）而获得的有机溶剂和水解缩合产物。

12. 发明申请

US20070021580A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film 有权
标题翻译：聚合物，聚合物，绝缘膜形成用组合物，绝缘膜的制造方法以及绝缘膜的制造方法
公开(公告)号：US20070021580A1
公开(公告)日：2007-01-25
申请号：US11485508
申请日：2006-07-13
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： C08G77/60
CPC分类号： H01L21/02126 , C09D183/14 , H01B3/30 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122
摘要： A method of producing a polymer includes hydrolyzing and condensing a hydrolyzable-group-containing silane monomer (B) in the presence of one or more polycarbosilanes (A), at least one of the polycarbosilanes (A) being a polycarbosilane (I) having a weight average molecular weight of 500 or more and obtained by reacting a compound of the following general formula (1) in the presence of at least one of an alkali metal and an alkaline earth metal, R1mY3-mSiCR2nX3-n (1) wherein R1 and R2 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, and m and n individually represent integers from 0 to 2.
摘要翻译：一种聚合物的制造方法，在一种或多种聚碳硅烷（A）的存在下水解和缩合含有水解性基团的硅烷单体（B），所述聚碳硅烷（A）中的至少一种为具有通过在碱金属和碱土金属中的至少一种的存在下使下列通式（1）的化合物反应得到的重均分子量为500以上，线公式“end =”lead“？> R 1> 3 3 3 SiCR 2 （1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1 = SUP＆gt;和R 2各自独立地表示一价有机基团或氢原子，X表示卤素原子，Y表示卤素原子或烷氧基，m和n分别表示0〜2的整数。

13. 发明申请

US20070015892A1 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film 审中-公开
标题翻译：聚合物，聚合物，绝缘膜形成用组合物，绝缘膜的制造方法以及绝缘膜的制造方法
公开(公告)号：US20070015892A1
公开(公告)日：2007-01-18
申请号：US11484604
申请日：2006-07-12
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： C08G77/04 , B05D3/02
CPC分类号： H01L21/02126 , C09D183/14 , H01B3/30 , H01L21/02216 , H01L21/02282 , H01L21/3121 , H01L21/3122
摘要： A method for producing a polymer includes hydrolyzing and condensing (B) a hydrolyzable-group-containing silane monomer in the presence of (A) a polycarbosilane, the polycarbosilane (A) being a polymer (I) obtained by reacting (a) a compound shown by the following general formula (1) and (b) at least one compound selected from the group consisting of a compound shown by the following general formula (2) and a compound shown by the following general formula (3) in an organic solvent in the presence of at least one of an alkali metal and an alkaline earth metal, R1kCX4-k (1) R2kSiY4-k (2) R3mY3-mSiCR4nX3-n (3) wherein R1 to R4 individually represent a monovalent organic group or a hydrogen atom, X represents a halogen atom, Y represents a halogen atom or an alkoxy group, k represents an integer from 0 to 3, and m and n individually represent integers from 0 to 2.
摘要翻译：制备聚合物的方法包括在（A）聚碳硅烷存在下水解和缩合（B）含可水解基团的硅烷单体，所述聚碳硅烷（A）是通过使（a）化合物由下述通式（1）和（b）表示的有机溶剂中的至少一种选自下述通式（2）表示的化合物和下述通式（3）所示的化合物的化合物在碱金属和碱土金属中的至少一种的存在下，<？in-line-formula description =“In-line formula”end =“lead”？> R＆lt; SUB （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“在线公式”end =“lead”？> R 2> 2 （3） -formulae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <3> _{m 3-m SiCR 4 N 3-n（3）<？in-line-formula description =“ 其中R 1至R 4各自独立地表示一价有机基团或氢原子，X表示卤素原子，Y 表示卤素原子或烷氧基，k表示0〜3的整数，m和n分别表示0〜2的整数。}

14. 发明申请

US20060134336A1 Novel polycarbosilane and method of producing the same, film-forming composition, and film and method of forming the same 审中-公开
标题翻译：新型聚碳硅烷及其制造方法，成膜组合物及其成膜方法
公开(公告)号：US20060134336A1
公开(公告)日：2006-06-22
申请号：US11284944
申请日：2005-11-23
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： B05D3/02 , C08F2/46 , C08G77/12
CPC分类号： C08G77/60
摘要： A method of producing a polycarbosilane includes reacting (A) a polycarbosilane having a silicon-hydrogen bond and (B) a compound having a carbon-carbon multiple bond to which a silicon-hydrogen bond may be added.
摘要翻译：一种制备聚碳硅烷的方法包括使（A）具有硅 - 氢键的聚碳硅烷与（B）可以加入硅 - 氢键的具有碳 - 碳多重键的化合物反应。

15. 发明申请

US20060063905A1 Polycarbosilane and method of producing the same 有权
标题翻译：聚碳硅烷及其制备方法
公开(公告)号：US20060063905A1
公开(公告)日：2006-03-23
申请号：US11227179
申请日：2005-09-16
申请人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
发明人： Hisashi Nakagawa , Masahiro Akiyama , Takahiko Kurosawa , Atsushi Shiota
IPC分类号： C08G77/06 , B32B9/04
CPC分类号： C08G77/60 , C08G77/50
摘要： A polycarbosilane, having a main chain in which silicon atoms and carbon atoms are alternately repeated, includes a repeating unit shown by a following general formula (1), a repeating unit shown by a following general formula (2), and a repeating unit shown by a following general formula (3).
摘要翻译：具有交替重复硅原子和碳原子的主链的聚碳硅烷包括由以下通式（1）表示的重复单元，由以下通式（2）表示的重复单元和所示的重复单元通过以下通式（3）。

16. 发明申请

US20060216531A1 Laminate and method of forming the same, insulating film, and semiconductor device 有权
公开(公告)号：US20060216531A1
公开(公告)日：2006-09-28
申请号：US11410895
申请日：2006-04-26
申请人： Masahiro Akiyama , Seitaro Hattori , Takahiko Kurosawa , Manabu Sekiguchi , Terukazu Kokubo , Michihiro Mita , Tatsuya Yamanaka , Masaki Obi
发明人： Masahiro Akiyama , Seitaro Hattori , Takahiko Kurosawa , Manabu Sekiguchi , Terukazu Kokubo , Michihiro Mita , Tatsuya Yamanaka , Masaki Obi
IPC分类号： B32B27/00 , B32B9/04 , C08L83/04
CPC分类号： H01L21/02118 , C09D183/14 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76832 , Y10T428/1014 , Y10T428/31663
摘要： A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.

17. 发明授权

US07556860B2 Laminate and method of forming the same, insulating film, and semiconductor device 有权
标题翻译：层叠体及其形成方法，绝缘膜和半导体器件
公开(公告)号：US07556860B2
公开(公告)日：2009-07-07
申请号：US11410895
申请日：2006-04-26
申请人： Masahiro Akiyama , Seitaro Hattori , Takahiko Kurosawa , Manabu Sekiguchi , Terukazu Kokubo , Michihiro Mita , Tatsuya Yamanaka , Masaki Obi
发明人： Masahiro Akiyama , Seitaro Hattori , Takahiko Kurosawa , Manabu Sekiguchi , Terukazu Kokubo , Michihiro Mita , Tatsuya Yamanaka , Masaki Obi
IPC分类号： B32B9/04 , B32B27/00 , C08L83/04
CPC分类号： H01L21/02118 , C09D183/14 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76801 , H01L21/76825 , H01L21/76828 , H01L21/76829 , H01L21/76832 , Y10T428/1014 , Y10T428/31663
摘要： A laminate including: a first silica-based film; a second silica-based film; and an organic film, wherein the second silica-based film includes an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond. A method of forming the laminate includes: forming a first coating for a first silica-based film on a substrate; forming a second coating for a second silica-based film on the first coating, the second coating including an organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; forming a third coating for an organic film on the second coating; and curing a multilayer film including the first to third coatings.
摘要翻译：一种层压体，包括：第一二氧化硅基膜; 第二硅胶膜; 和有机膜，其中所述第二二氧化硅基膜包括含有碳 - 碳双键或碳 - 碳三键的有机基团。形成层压体的方法包括：在基材上形成用于第一二氧化硅基膜的第一涂层; 在第一涂层上形成第二二氧化硅基膜的第二涂层，第二涂层包括含有碳 - 碳双键或碳 - 碳三键的有机基团; 在第二涂层上形成用于有机膜的第三涂层; 以及固化包括第一至第三涂层的多层膜。

18. 发明申请

US20100007025A1 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE 有权
标题翻译：有机硅膜及其形成方法，用于形成半导体器件绝缘膜的组合物及其制造方法，接线结构和半导体器件
公开(公告)号：US20100007025A1
公开(公告)日：2010-01-14
申请号：US12278224
申请日：2007-01-31
申请人： Hisashi Nakagawa , Tatsuya Yamanaka , Masahiro Akiyama , Terukazu Kokubo , Youhei Nobe
发明人： Hisashi Nakagawa , Tatsuya Yamanaka , Masahiro Akiyama , Terukazu Kokubo , Youhei Nobe
IPC分类号： H01L21/31 , H01L23/48 , C08G77/04
CPC分类号： C09D183/04 , C08G77/60 , C09D183/14 , H01B3/46 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/3122 , H01L21/316 , C08L83/00
摘要： An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.
摘要翻译：公开了一种用于半导体器件的绝缘膜形成组合物，其包含碳原子数为11至17原子％的有机硅溶胶和有机溶剂。有机硅溶胶包括水解缩合产物P1和水解缩合产物P2。水解缩合产物P1是通过在（C）碱性催化剂存在下（A）包含可水解基团的硅烷单体和（B）包含可水解基团的聚碳硅烷（A）和水解缩合产物P2 是通过水解和冷凝（D）包含可水解基团的硅烷单体获得的。

19. 发明授权

US07893538B2 Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device 有权
标题翻译：有机二氧化硅膜及其形成方法，半导体装置用绝缘膜的成膜用组合物及其制造方法，配线结构及半导体装置
公开(公告)号：US07893538B2
公开(公告)日：2011-02-22
申请号：US12278224
申请日：2007-01-31
申请人： Hisashi Nakagawa , Tatsuya Yamanaka , Masahiro Akiyama , Terukazu Kokubo , Youhei Nobe
发明人： Hisashi Nakagawa , Tatsuya Yamanaka , Masahiro Akiyama , Terukazu Kokubo , Youhei Nobe
IPC分类号： H01L23/48
CPC分类号： C09D183/04 , C08G77/60 , C09D183/14 , H01B3/46 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/3122 , H01L21/316 , C08L83/00
摘要： An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.
摘要翻译：公开了一种用于半导体器件的绝缘膜形成组合物，其包含碳原子数为11至17原子％的有机硅溶胶和有机溶剂。有机硅溶胶包括水解缩合产物P1和水解缩合产物P2。水解缩合产物P1是通过在（C）碱性催化剂存在下（A）包含可水解基团的硅烷单体和（B）包含可水解基团的聚碳硅烷（A）和水解缩合产物P2 是通过水解和冷凝（D）包含可水解基团的硅烷单体获得的。

20. 发明申请

US20060024980A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device 有权
标题翻译：二氧化硅膜，其形成方法，用于形成用于半导体器件的绝缘膜的组合物，互连结构和半导体器件
公开(公告)号：US20060024980A1
公开(公告)日：2006-02-02
申请号：US11184964
申请日：2005-07-20
申请人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
发明人： Hajime Tsuchiya , Seitaro Hattori , Masahiro Akiyama , Atsushi Shiota
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C09D183/10 , G03F7/0757 , H01L21/02348 , H01L21/3121 , H01L21/316
摘要： A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,
摘要翻译：形成二氧化硅基膜的方法包括：将通过使用热和紫外线辐射固化的用于形成用于半导体器件的绝缘膜的组合物施加到基底以形成涂层; 加热涂层; 并向涂层施加热和紫外线辐射以进行固化处理。该组合物包括：通过水解和缩合选自由以下通式（A）表示的化合物组成的组中的至少一种硅烷化合物和至少一种选自化合物的硅烷化合物产生的水解缩合产物由以下通式（B）表示的化合物和由以下通式（C）表示的化合物：和有机溶剂，

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