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11. 发明授权

US06429035B2 Method of growing silicon crystal in liquid phase and method of producing solar cell 失效
标题翻译：在液相中生长硅晶体的方法和生产太阳能电池的方法
公开(公告)号：US06429035B2
公开(公告)日：2002-08-06
申请号：US09198263
申请日：1998-11-24
申请人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
发明人： Katsumi Nakagawa , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane
IPC分类号： H01L2120
CPC分类号： H01L27/1296 , C30B19/02 , C30B29/06 , H01L21/02381 , H01L21/02513 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02625 , H01L21/02628 , H01L29/66765 , H01L31/068 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A method of growing single crystal silicon in a liquid phase comprises preparing a melt by dissolving a solid of silicon containing boron, aluminum, phosphorus or arsenic at a predetermined concentration into indium melted in a carbon boat or a quartz crucible, supersaturating the melt, and submerging a substrate into the melt, thereby growing a silicon crystal containing a dopant element. This method can provide a method of growing a thin film of crystalline silicon having a high crystallinity and a dopant concentration favorably controlled, thereby serving for mass production of inexpensive solar cells which have high performance as well as image displays which have high contrast and are free from color ununiformity.
摘要翻译：在液相中生长单晶硅的方法包括通过将以预定浓度的含有硼，铝，磷或砷的硅的固体溶解在在碳舟或石英坩埚中熔化的铟中来制备熔体，使熔体过饱和，以及将衬底浸入熔体中，从而生长含有掺杂元素的硅晶体。该方法可以提供一种生长具有高结晶度和有利于控制的掺杂剂浓度的晶体硅薄膜的方法，从而用于批量生产具有高性能的廉价太阳能电池以及具有高对比度且无游离的图像显示器从颜色不均匀。

12. 发明申请

US20050124139A1 Process of producing multicrystalline silicon substrate and solar cell 有权
标题翻译：生产多晶硅衬底和太阳能电池的工艺
公开(公告)号：US20050124139A1
公开(公告)日：2005-06-09
申请号：US10505979
申请日：2003-02-21
申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： C01B33/02 , C30B11/00 , C30B29/06 , C30B33/00 , H01L21/208 , H01L31/18 , H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： C30B11/00 , C30B29/06 , C30B33/00 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
摘要翻译：提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

13. 发明申请

US20050087226A1 Electrode arranging method 审中-公开
标题翻译：电极排列方法
公开(公告)号：US20050087226A1
公开(公告)日：2005-04-28
申请号：US10957577
申请日：2004-10-05
申请人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
发明人： Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
IPC分类号： H01L21/28 , H01L31/00 , H01L31/04
CPC分类号： H01L31/022425 , Y02E10/50
摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.
摘要翻译：根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率太阳能电池。

14. 发明授权

US06872248B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US06872248B2
公开(公告)日：2005-03-29
申请号：US10400636
申请日：2003-03-28
申请人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , C30B19/04 , C30B19/10
CPC分类号： C30B19/068 , C30B19/062 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。适用于实施所述液相生长过程的液相生长装置。

15. 发明授权

US06824609B2 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06824609B2
公开(公告)日：2004-11-30
申请号：US10229123
申请日：2002-08-28
申请人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
发明人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/064 , C30B19/02 , C30B19/06 , C30B29/06 , Y10S117/90 , Y10T117/1016 , Y10T117/1024
摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.
摘要翻译：提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

16. 发明授权

US06818104B2 Anodizing apparatus 失效
标题翻译：阳极氧化装置
公开(公告)号：US06818104B2
公开(公告)日：2004-11-16
申请号：US10669002
申请日：2003-09-24
申请人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： C25D1700
CPC分类号： H01L21/02032 , C25D11/32 , C25D17/10 , H01L21/0203 , H01L21/76259 , H01L29/0657 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363
摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
摘要翻译：在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层（2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面，（5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

17. 发明授权

US06566235B2 Process for producing semiconductor member, and process for producing solar cell 失效
标题翻译：半导体部件的制造方法以及太阳能电池的制造方法
公开(公告)号：US06566235B2
公开(公告)日：2003-05-20
申请号：US09819680
申请日：2001-03-29
申请人： Shoji Nishida , Takao Yonehara , Kiyofumi Sakaguchi , Noritaka Ukiyo , Yukiko Iwasaki
发明人： Shoji Nishida , Takao Yonehara , Kiyofumi Sakaguchi , Noritaka Ukiyo , Yukiko Iwasaki
IPC分类号： H01L2146
CPC分类号： H01L21/02032 , H01L21/3083 , H01L21/76259 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.
摘要翻译：一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。

18. 发明授权

US06664169B1 Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus 失效
标题翻译：半导体部件的制造方法，太阳能电池的制造方法以及阳极氧化装置
公开(公告)号：US06664169B1
公开(公告)日：2003-12-16
申请号：US09586887
申请日：2000-06-05
申请人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： H01L2176
CPC分类号： H01L21/02032 , C25D11/32 , C25D17/10 , H01L21/0203 , H01L21/76259 , H01L29/0657 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363
摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).
摘要翻译：在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层（2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面，（5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。

19. 发明授权

US06448155B1 Production method of semiconductor base material and production method of solar cell 失效
标题翻译：半导体基材的生产方法和太阳能电池的生产方法
公开(公告)号：US06448155B1
公开(公告)日：2002-09-10
申请号：US09592559
申请日：2000-06-12
申请人： Yukiko Iwasaki , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
发明人： Yukiko Iwasaki , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi , Noritaka Ukiyo
IPC分类号： H01L21301
CPC分类号： H01L21/6835 , H01L21/304 , H01L21/6836 , H01L21/76259 , H01L2221/68327 , H01L2221/68359 , H01L2221/68368
摘要： When a semiconductor layer formed via a separation layer on a substrate is supported by a support member and a pulling force is then exerted on the support member to mechanically break the separation layer to thereby form a thin-film semiconductor, the substrate is held by vacuum and/or electrostatic attachment and separation of the thin-film epitaxial layer is initiated from an area other than an edge of the substrate. This provides a method capable of obtaining the thin-film epitaxial layer with excellent characteristics in a good yield and permitting repetitive uses of the substrate, without inducing lifting of the substrate due to the separation force overcoming the attaching force of the substrate when producing a semiconductor base material and a solar cell.
摘要翻译：当通过基板上的分离层形成的半导体层被支撑构件支撑并且然后将拉力施加在支撑构件上以机械地破坏分离层从而形成薄膜半导体时，基板被真空保持和/或薄膜外延层的静电附着和分离从基板边缘以外的区域开始。这提供了一种能够以良好的产率获得具有优异特性的薄膜外延层的方法，并且允许基板的重复使用，而不会在产生半导体时由于克服基板的附着力而产生的分离力而引起基板的提升基材和太阳能电池。

20. 发明授权

US06534336B1 Production method of photoelectric conversion device, and photoelectric conversion device produced by the method 失效
标题翻译：光电转换装置的生产方法，以及通过该方法生产的光电转换装置
公开(公告)号：US06534336B1
公开(公告)日：2003-03-18
申请号：US09572940
申请日：2000-05-18
申请人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
发明人： Masaaki Iwane , Takao Yonehara , Shoji Nishida , Kiyofumi Sakaguchi
IPC分类号： H01L2100
CPC分类号： H01L31/1892 , H01L31/0236 , H01L31/02363 , H01L31/056 , H01L31/1804 , H01L31/184 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a production method of a photoelectric conversion device, which comprises a step of forming an uneven shape on a surface of a substrate, a step of providing a separation layer maintaining the uneven shape on the substrate, a step of forming a semiconductor film maintaining the uneven shape on the separation layer, and a step of separating the semiconductor film from the substrate at the separation layer, wherein the step of forming the uneven shape on the surface of the substrate is a step of forming the substrate having the uneven shape on the surface by anisotropic etching of the substrate with the separation layer remaining after the separation. The present invention also provides a photoelectric conversion device produced by the above method.
摘要翻译：本发明提供了一种光电转换装置的制造方法，其特征在于，包括在基板的表面上形成不均匀的形状的步骤，在基板上设置保持凹凸形状的分离层的工序，形成半导体在分离层上保持不均匀形状的膜，以及在分离层处分离半导体膜与基板的步骤，其中在基板的表面上形成不均匀形状的步骤是形成具有不平坦的基板的步骤通过分离后残留分离层的基板的各向异性蚀刻在表面上形成。本发明还提供一种通过上述方法制造的光电转换装置。

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