会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 14. 发明授权
    • Solid state image sensing device
    • 固态摄像装置
    • US5028972A
    • 1991-07-02
    • US239610
    • 1988-09-01
    • Kazunari WatanabeHiroshi Nozawa
    • Kazunari WatanabeHiroshi Nozawa
    • H01L27/148H04N5/335H04N5/341H04N5/359H04N5/369H04N5/372
    • H01L27/14831
    • In a solid state image sensing device comprising: a semiconductor substrate; a photosensitive pixel area disposed on the semiconductor substrate for generating signal charges in response to incident light and storing the signal charges; a charge transfer area disposed adjacent to the photosensitive pixel area for transferring the signal charges stored in the photosensitive pixel area; and a transfer electrode provided above the charge transfer area, the solid state image sensing device comprises: a high melting temperature metal layer composed of molybdenum silicide MoSi formed above the transfer electrode and an insulating layer having ample thickness formed between the high melting temperature metal layer and the transfer electrode. The light shielding efficiency can be improved and occurrence of a smear phenomenon can be prevented in the resulting device.
    • 一种固体摄像装置,包括:半导体衬底; 设置在所述半导体衬底上的光敏像素区域,用于响应于入射光产生信号电荷并存储所述信号电荷; 与光敏像素区域相邻设置的用于传送存储在感光像素区域中的信号电荷的电荷转移区域; 以及设置在所述电荷转移区域之上的转移电极,所述固态图像感测装置包括:形成在所述转移电极上方的由硅化钼MoSi构成的高熔点金属层和在所述高熔点金属层之间形成的具有足够厚度的绝缘层 和转印电极。 可以提高遮光效率,并且可以防止在所得到的装置中产生污迹现象。
    • 16. 发明授权
    • Polypropylene resin composition and film made thereof
    • 聚丙烯树脂组合物及其制成的薄膜
    • US08022148B2
    • 2011-09-20
    • US12667593
    • 2008-07-03
    • Hiroshi Nozawa
    • Hiroshi Nozawa
    • C08K5/04
    • C08L23/14C08J5/18C08J2323/14C08K5/14C08L23/04C08L23/142C08L2666/06
    • A polypropylene resin composition that has a melt flow rate of 1.5 (g/10 minutes) or more and is obtainable by melt-kneading 94 to 98 parts by weight of (A) a propylene copolymer that comprises a polymer portion being obtainable by polymerizing monomers containing propylene as the major component and having an intrinsic viscosity of 2.0 (dL/g) or more and a copolymer portion being obtainable by copolymerizing propylene and ethylene, 2 to 6 parts by weight of (B) an ethylene polymer having a density of 0.920 g/cm3 or more, and (C) an organic peroxide, provided that the total weight of the propylene copolymer (A) and the ethylene polymer (B).
    • 一种聚丙烯树脂组合物,其熔体流动速率为1.5(g / 10分钟)以上,通过熔融混炼得到94〜98重量份的(A)丙烯共聚物,该丙烯共聚物包含聚合物部分,该聚合物部分可通过聚合单体 含有丙烯作为主要成分,特性粘度为2.0(dL / g)以上,共聚物部分可通过丙烯与乙烯共聚获得,2〜6重量份的(B)密度为0.920的乙烯聚合物 g / cm 3以上,(C)有机过氧化物,前提是丙烯共聚物(A)和乙烯聚合物(B)的总重量。
    • 19. 发明授权
    • Memory device with function to perform operation, and method of performing operation and storage
    • 具有执行功能的存储器件,以及执行操作和存储的方法
    • US07038930B2
    • 2006-05-02
    • US10844069
    • 2004-05-12
    • Hiroshi NozawaHiroaki KatoYoshikazu Fujimori
    • Hiroshi NozawaHiroaki KatoYoshikazu Fujimori
    • G11C11/22
    • G11C11/22
    • To provide a memory device with a function to perform an operation and a method of performing an operation and storage which can save space and cost and which can start, immediately after the power source is recovered, the processing which was being performed at the time of power failure. A memory cell MC can store two independent data sets; DRAM data (volatile data) and FeRAM data (non-volatile data). Thus, the number of memory cells can be reduced to a half. Also, the DRAM data to be used in the next operation of the two data sets which have been read out for the previous operation are temporarily held in a hold circuit 21 of an operation unit OU and then written back into the memory cell MC in a non-volatile manner as new FeRAM data for preparation of the next operation. Thus, even when the power source is shut down by an unexpected trouble, the data necessary for the next operation are not lost.
    • 为了提供具有执行操作的功能的存储器件和执行操作和存储的方法,其可以节省空间和成本,并且可以在电源恢复之后立即开始执行正在执行的处理 电源(检测)失败。 存储单元MC可以存储两个独立的数据集; DRAM数据(易失性数据)和FeRAM数据(非易失性数据)。 因此,存储器单元的数量可以减少到一半。 此外,将用于在先前操作中读出的两个数据组的下次操作中使用的DRAM数据被暂时保存在操作单元OU的保持电路21中,然后被写回到存储单元MC中 作为新的FeRAM数据的非易失性方式,用于准备下一个操作。 因此,即使当电源被意外的故障关闭时,下一个操作所需的数据也不会丢失。