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11. 发明申请

US20070121150A1 Document processing apparatus, document processing method and recording medium 审中-公开
标题翻译：文件处理装置，文件处理方法和记录介质
公开(公告)号：US20070121150A1
公开(公告)日：2007-05-31
申请号：US11528263
申请日：2006-09-28
申请人： Tetsuya Kobayashi , Takao Maekawa , Makoto Yoshimi , Kyoko Matsushita
发明人： Tetsuya Kobayashi , Takao Maekawa , Makoto Yoshimi , Kyoko Matsushita
IPC分类号： G06F3/12
CPC分类号： H04N1/32106 , H04N2201/0094 , H04N2201/3202 , H04N2201/3273
摘要： A document processing apparatus performs plural types of processings for a document. The apparatus includes a control unit and a storage unit. The control unit receives an instruction group including a plurality of instructions of performing respective processings for a certain document. The storage unit stores: (i) plural pieces of individual processing result information indicating results of the plurality of processings for the certain document, respectively; and (ii) overall processing result information indicating a result of the overall instruction group.
摘要翻译：文件处理装置对文档执行多种处理。该装置包括控制单元和存储单元。控制单元接收包括针对特定文档执行各个处理的多个指令的指令组。存储单元存储：（i）分别指示该特定文档的多个处理的结果的多个个体处理结果信息; 和（ii）指示整个指令组的结果的整体处理结果信息。

12. 发明申请

US20050276263A1 Traffic distribution control device 审中-公开
标题翻译：交通配送控制装置
公开(公告)号：US20050276263A1
公开(公告)日：2005-12-15
申请号：US10978969
申请日：2004-11-01
申请人： Takahiro Suetsugu , Hiroshi Kinoshita , Makoto Yoshimi
发明人： Takahiro Suetsugu , Hiroshi Kinoshita , Makoto Yoshimi
IPC分类号： H04L12/707 , H04J1/16 , H04J3/14 , H04L1/00 , H04L12/26 , H04L12/28 , H04L12/801 , H04L12/891 , H04L12/911 , H04L12/56
CPC分类号： H04L47/10 , H04L45/24 , H04L45/745 , H04L47/125 , H04L2012/5624
摘要： A data transmission device 10 serving as a traffic distribution control device is a device which, in order to distribute traffic across a plurality of physical ports composing a logical port for link aggregation, uses a hash function to calculate a hash value from a destination address and a source address of a receive packet, and determines a destination physical port. The traffic distribution control device includes a measuring unit 13 that measures an output flow rate of a packet outputted from each of the plurality of physical ports; a calculating unit 14 that calculates a flow rate ratio between the plurality of physical ports with respect to the measured output flow rates; and a first control unit 12 that feeds the calculated flow rate ratio back to a bandwidth distribution ratio between the plurality of physical ports to change numerical allocation of hash values for determining the destination physical port.
摘要翻译：作为流量分配控制装置的数据发送装置10是为了在构成用于链路聚合的逻辑端口的多个物理端口上分配流量的装置，使用散列函数来计算来自目的地地址的哈希值，接收分组的源地址，并确定目的物理端口。交通流量控制装置包括测量单元13，其测量从多个物理端口中的每一个输出的分组的输出流量; 计算单元14，其根据测量的输出流量计算多个物理端口之间的流量比; 以及第一控制单元12，其将计算的流量比率反馈到多个物理端口之间的带宽分配比，以改变用于确定目的地物理端口的哈希值的数值分配。

13. 发明授权

US06545323B2 Semiconductor memory device including a pair of MOS transistors forming a detection circuit 失效
标题翻译：半导体存储器件包括形成检测电路的一对MOS晶体管
公开(公告)号：US06545323B2
公开(公告)日：2003-04-08
申请号：US10014662
申请日：2001-12-14
申请人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
发明人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
IPC分类号： H01L2976
CPC分类号： G11C11/4091 , H01L27/10897 , H01L27/12
摘要： A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.
摘要翻译：半导体器件包括用作形成在绝缘膜上的衬底的半导体层，布置在半导体层上并且各自具有栅极，源极和漏极的多个MOS晶体管，多个MOS的一对MOS晶体管构成检测电路的晶体管，用于检测施加到栅极的电位的大小，作为一对晶体管的电导率差，以及与半导体层的导电类型相同的导电类型的扩散层区域，布置在源的一部分以及构成检测电路的一对MOS晶体管的漏极，用于将用作一对MOS晶体管的基板的部分彼此连接。

14. 发明授权

US08611748B2 WDM optical transmission system and wavelength dispersion compensation method 有权
标题翻译： WDM光传输系统和波长色散补偿方法
公开(公告)号：US08611748B2
公开(公告)日：2013-12-17
申请号：US13429999
申请日：2012-03-26
申请人： Makoto Yoshimi , Yoshiyuki Maeda
发明人： Makoto Yoshimi , Yoshiyuki Maeda
IPC分类号： H04J14/02
CPC分类号： H04B10/25133 , H04B10/07951 , H04J14/02
摘要： A WDM optical transmission system includes a plurality of optical transmission devices, each of which include a first memory that stores a first control program that controls a dispersion compensation amount in a host device; a processor to execute the first control program; a notification frame transmission circuit that transmits an information indicating a setting value of the dispersion compensation amount and a detection result corresponding to the setting value to another device; a third memory that stores a second control program that calculates a control value of the dispersion compensation amount in the another device; and a control frame transmission circuit that transmits the control value to the another device, wherein the processor executes the second control program when a problem occurs in the another device, and controls the dispersion compensation amount in the host device when a problem occurs in the host device.
摘要翻译： WDM光传输系统包括多个光传输设备，每个光传输设备包括存储控制主设备中的色散补偿量的第一控制程序的第一存储器; 执行第一控制程序的处理器; 通知帧发送电路，其将表示所述色散补偿量的设定值的信息和与所述设定值对应的检测结果发送到其他装置; 第三存储器，存储计算另一装置中的色散补偿量的控制值的第二控制程序; 以及控制帧传输电路，其将所述控制值发送到所述另一设备，其中当所述另一设备中出现问题时，所述处理器执行所述第二控制程序，并且当所述主机发生问题时控制所述主机设备中的色散补偿量设备。

15. 发明授权

US07894439B2 Communication device in a virtual private network using a multi protocol label switch 有权
标题翻译：通信设备在虚拟专用网中使用多协议标签交换机
公开(公告)号：US07894439B2
公开(公告)日：2011-02-22
申请号：US12187457
申请日：2008-08-07
申请人： Makoto Yoshimi
发明人： Makoto Yoshimi
IPC分类号： H04L12/28 , H04L12/56
CPC分类号： H04L45/50 , H04L12/66 , H04L45/04 , H04L2212/00
摘要： A communication device is, in an MPLS network including a first area and a second area, the first area being notified of aggregate route information into which pieces of route information on a plurality of routes are aggregated, and using an LDP for generating an LSP, located in the first area but spans between the first area and the second area and receives a message for generating the LSP using one of the plurality of routes within the second area, wherein the communication device is stored with aggregate route information, pieces of route information and labels, then determines whether the route information in the message is stored or not when receiving the message, and, if not stored, executes a label distribution process if the route specified by the route information is one of the routes aggregated with the stored aggregate route information.
摘要翻译：通信装置在包括第一区域和第二区域的MPLS网络中，通知聚合路由信息的第一区域，多条路由上的路由信息被聚合到其中，并且使用LDP生成LSP，位于第一区域，但跨越第一区域和第二区域之间，并且接收用于使用第二区域内的多条路线中的一条生成LSP的消息，其中通信设备与聚合路由信息一起存储路径信息和标签，然后在接收到消息时确定消息中的路由信息是否被存储，并且如果不存储，则如果路由信息指定的路由是与存储的聚合聚合的路由之一，则执行标签分发处理路线信息。

16. 发明授权

US06342408B1 Method of manufacturing semiconductor memory device 失效
标题翻译：制造半导体存储器件的方法
公开(公告)号：US06342408B1
公开(公告)日：2002-01-29
申请号：US09658573
申请日：2000-09-08
申请人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
发明人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
IPC分类号： H01L21336
CPC分类号： G11C11/4091 , H01L27/10897 , H01L27/12
摘要： A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.
摘要翻译：半导体器件包括用作形成在绝缘膜上的衬底的半导体层，布置在半导体层上并且各自具有栅极，源极和漏极的多个MOS晶体管，多个MOS的一对MOS晶体管构成检测电路的晶体管，用于检测施加到栅极的电位的大小，作为一对晶体管的电导率差，以及与半导体层的导电类型相同的导电类型的扩散层区域，布置在源的一部分以及构成检测电路的一对MOS晶体管的漏极，用于将用作一对MOS晶体管的基板的部分彼此连接。

17. 发明授权

US6130461A Semiconductor memory device 失效
公开(公告)号：US6130461A
公开(公告)日：2000-10-10
申请号：US291042
申请日：1999-04-14
申请人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
发明人： Yukihito Oowaki , Masako Yoshida , Makoto Yoshimi
IPC分类号： H01L21/8242 , G11C11/4091 , H01L27/108 , H01L27/12 , H01L29/76 , H01L29/786
CPC分类号： G11C11/4091 , H01L27/10897 , H01L27/12
摘要： A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.

18. 发明授权

US5734181A Semiconductor device and manufacturing method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5734181A
公开(公告)日：1998-03-31
申请号：US716713
申请日：1996-09-12
申请人： Ryuji Ohba , Tomohisa Mizuno , Makoto Yoshimi , Kazuya Ohuchi
发明人： Ryuji Ohba , Tomohisa Mizuno , Makoto Yoshimi , Kazuya Ohuchi
IPC分类号： H01L29/165 , H01L21/265 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L27/06 , H01L29/08 , H01L29/78 , H01L29/786 , H01L31/0312 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/66477 , H01L21/26506 , H01L21/8234 , H01L21/823814 , H01L27/0605 , H01L29/0847 , H01L29/66575 , H01L29/66659 , H01L29/66772 , H01L29/7838 , H01L29/78618 , H01L21/26586
摘要： A semiconductor device having a MISFET includes: a silicon substrate (2) having a semiconductor region on a surface thereof; a source region (10a) and a drain region (10b) formed in the semiconductor region separately; a channel region formed in the semiconductor region and between the source region and the drain region; a gate electrode (6) formed on the channel region; and a region (8a) formed of Si.sub.1-x C.sub.x overlapping the source region and having a carbon concentration enough to increase an energy gap therein beyond that in the channel region. Further, the MISFET is constructed in such a way that a hetero-junction surface formed between the region formed of Si.sub.1-x C.sub.x (8a) and the other portion of the semiconductor region on the side of the channel region exists at an interface between the source region (10a) and the channel region or in the vicinity thereof, in order to realize a high speed operation, even if the device is microminiaturized.
摘要翻译：具有MISFET的半导体器件包括：在其表面上具有半导体区域的硅衬底（2）; 分别形成在半导体区域中的源极区域（10a）和漏极区域（10b）; 形成在所述半导体区域中，并且在所述源极区域和所述漏极区域之间的沟道区域; 形成在所述沟道区上的栅电极（6）和由Si1-xCx形成的区域（8a），其与源极区域重叠并且具有足以增加其中的能隙的碳浓度超过沟道区域中的能隙。此外，MISFET被构造成使得形成在由Si1-xCx（8a）形成的区域和沟道区域侧的半导体区域的另一部分之间的异质结表面存在于源极区域（10a）和通道区域或其附近，以便实现高速操作，即使该装置被微型化。

19. 发明授权

US5097311A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5097311A
公开(公告)日：1992-03-17
申请号：US375772
申请日：1989-07-05
申请人： Masao Iwase , Sanae Fukuda , Makoto Yoshimi
发明人： Masao Iwase , Sanae Fukuda , Makoto Yoshimi
IPC分类号： H01L21/8234 , H01L21/8238 , H01L27/088 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L27/092
摘要： A CMOS inverter circuit incorporating a P channel MOSFET and an N channel MOSFET, both of which can achieve surface conduction, is provided while maintaining the prescribed miniaturization. Thus, the threshold value and conductance of the both MOSFETs are independent of the thickness of the silicon film, and can be easily controlled in the manufacturing processes thereof.
摘要翻译：在保持规定的小型化的同时，提供并入有P沟道MOSFET和N沟道MOSFET的CMOS逆变器电路，两者均可实现表面导通。因此，两个MOSFET的阈值和电导与硅膜的厚度无关，并且在其制造工艺中可以容易地控制。

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