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11. 发明申请

US20120017826A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20120017826A1
公开(公告)日：2012-01-26
申请号：US13258126
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C30B23/025 , C30B33/06 , H01L21/02002 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L29/1608
摘要： A supporting portion (30c) made of silicon carbide has irregularities at at least a portion of a main surface (FO). The supporting portion (30c) and at least one single crystal substrate (11) made of silicon carbide are stacked such that the backside surface (B1) of each at least one single crystal substrate (11) and the main surface (FO) of the supporting portion (30c) having irregularities formed contact each other. In order to connect the backside surface (B1) of each at least one single crystal substrate (11) to the supporting portion (30c), the supporting portion (30c) and at least one single crystal substrate (11) are heated such that the temperature of the supporting portion (30c) exceeds the sublimation temperature of silicon carbide, and the temperature of each at least one single crystal substrate (11) is below the temperature of the supporting portion (30c).
摘要翻译：由碳化硅制成的支撑部分（30c）在主表面（FO）的至少一部分处具有凹凸。支撑部（30c）和由碳化硅构成的至少一个单晶基板（11）被层叠，使得每个至少一个单晶基板（11）的背面（B1）和主晶面具有形成彼此接触的凹凸的支撑部（30c）。为了将每个至少一个单晶衬底（11）的背面（B1）连接到支撑部分（30c），支撑部分（30c）和至少一个单晶衬底（11）被加热，使得支撑部分（30c）的温度超过碳化硅的升华温度，并且每个至少一个单晶衬底（11）的温度低于支撑部分（30c）的温度。

12. 发明申请

US20110278593A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造碳化硅衬底的方法，制造半导体器件的方法，碳化硅衬底和半导体器件
公开(公告)号：US20110278593A1
公开(公告)日：2011-11-17
申请号：US13104219
申请日：2011-05-10
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Yasuo Namikawa
IPC分类号： H01L29/12 , C30B23/02 , H01L21/20 , B32B13/04
CPC分类号： H01L29/7802 , C30B23/02 , C30B29/36 , H01L21/02378 , H01L21/02529 , H01L21/02631 , H01L21/0475 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible.
摘要翻译：一种制造碳化硅衬底的方法包括以下步骤：制备由单晶碳化硅制成的SiC衬底; 将基底基板设置在坩埚内以面对SiC基板的主表面; 以及通过加热坩埚中的基底基底而形成与碳化硅基体的主表面接触的碳化硅制成的基底层，使其落入构成基底基板的碳化硅的升华温度以上的温度范围内。在形成基层的步骤中，将含硅的气体引入坩埚中。

13. 发明授权

US08629457B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08629457B2
公开(公告)日：2014-01-14
申请号：US13005719
申请日：2011-01-13
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L33/18
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.
摘要翻译：碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。第二层的位错密度高于第一层的位错密度。因此，发光装置的量子效率和功率效率都可以高。

14. 发明申请

US20110284873A1 SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：碳化硅基板
公开(公告)号：US20110284873A1
公开(公告)日：2011-11-24
申请号：US13146432
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L29/161
CPC分类号： H01L29/66068 , H01L21/02529 , H01L21/02609 , H01L21/187 , H01L29/7802
摘要： A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids.
摘要翻译：碳化硅衬底具有衬底区域和支撑部分。衬底区域具有第一单晶衬底。支撑部分连接到第一单晶的第一背面。第一单晶基板的位错密度低于支撑部的位错密度。衬底区域和支撑部分中的至少一个具有空隙。

15. 发明申请

US20110175108A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110175108A1
公开(公告)日：2011-07-21
申请号：US13005719
申请日：2011-01-13
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L33/18
CPC分类号： H01L33/16 , H01L33/007 , H01L33/32
摘要： A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high.
摘要翻译：碳化硅衬底具有面向半导体层的第一层和堆叠在第一层上的第二层。第二层的位错密度高于第一层的位错密度。因此，发光装置的量子效率和功率效率都可以高。

16. 发明申请

US20120003823A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：US20120003823A1
公开(公告)日：2012-01-05
申请号：US13255314
申请日：2010-09-28
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/02612 , H01L21/02614 , H01L21/02656 , H01L21/02667 , H01L21/047 , H01L29/66068
摘要： A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed.
摘要翻译：制备具有支撑部分和第一和第二碳化硅衬底的组合衬底。第一碳化硅衬底具有第一正面和第一侧面。第二碳化硅衬底具有第二前侧表面和第二侧表面。第二侧面设置成在第一侧表面和第二侧表面之间形成有在第一和第二前侧表面之间具有开口的间隙。通过将来自开口的熔融硅引入到间隙中，形成硅连接部，以连接第一和第二侧表面以封闭开口。通过碳化硅连接部分，形成碳化硅连接部分。

17. 发明申请

US20120015499A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：US20120015499A1
公开(公告)日：2012-01-19
申请号：US13256328
申请日：2010-09-28
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L21/04
CPC分类号： H01L21/02667 , H01L21/02378 , H01L21/0243 , H01L21/02529 , H01L21/02612 , H01L21/02614 , H01L21/02656 , H01L21/047 , H01L21/0475 , H01L29/045 , H01L29/66068 , H01L29/7802
摘要： A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed.
摘要翻译：制备具有支撑部分和第一和第二碳化硅衬底的组合衬底。在第一和第二碳化硅衬底之间，存在具有开口的间隙。在开口上形成用于间隙的闭合层。封闭层至少包括硅层。为了形成由碳化硅制成的盖子并且封闭开口上的间隙，硅层被碳化。通过将第一和第二碳化硅衬底的第一和第二侧表面的升华物沉积到盖上，形成连接部分以封闭开口。盖子被移除。

18. 发明申请

US20120003812A1 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：US20120003812A1
公开(公告)日：2012-01-05
申请号：US13256455
申请日：2010-09-28
申请人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
发明人： Makoto Sasaki , Shin Harada , Taro Nishiguchi , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L21/04
CPC分类号： H01L21/324 , H01L21/67109 , H01L21/67115 , H01L29/1608
摘要： A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature.
摘要翻译：多个碳化硅基板和支撑部分被加热。在从多个碳化硅衬底沿垂直于一个平面并远离支撑部分的方向延伸的第一空间中面对多个碳化硅衬底的第一辐射平面的温度被设定为第一温度。第二辐射平面的面向支撑部分的第二空间的温度被设定在高于第一温度的第二温度，该第二空间从垂直于一个平面且远离多个碳化硅衬底的方向从支撑部延伸。在沿着一个平面从多个碳化硅衬底之间的间隙延伸的第三空间中面对多个碳化硅衬底的第三辐射平面的温度被设定为低于第二温度的第三温度。

19. 发明申请

US20120161158A1 COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：具有碳化硅基板的组合基板
公开(公告)号：US20120161158A1
公开(公告)日：2012-06-28
申请号：US13394640
申请日：2011-06-17
申请人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Kyoko Okita , Yasuo Namikawa
发明人： Tsutomu Hori , Shin Harada , Hiroki Inoue , Makoto Sasaki , Satomi Itoh , Kyoko Okita , Yasuo Namikawa
IPC分类号： H01L29/161
CPC分类号： H01L29/7802 , H01L21/02378 , H01L21/0243 , H01L21/02433 , H01L21/02529 , H01L21/02631 , H01L21/0475 , H01L29/045 , H01L29/1608 , H01L29/66068
摘要： A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate.
摘要翻译：第一碳化硅衬底具有连接到支撑部分的第一背面，与第一背面相对的第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧表面。第二碳化硅衬底具有连接到支撑部分的第二背面，与第二背面相对的第二前侧表面，以及将第二背面和第二前侧表面彼此连接的第二侧表面，在第一侧表面和第二侧表面之间形成间隙。闭合部分闭合间隙。由此，可以防止异物残留在组合基板中设置的多个碳化硅基板之间的间隙中。

20. 发明申请

US20120276715A1 METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE 审中-公开
标题翻译：用于制造具有碳化硅基底的组合衬底的方法
公开(公告)号：US20120276715A1
公开(公告)日：2012-11-01
申请号：US13395795
申请日：2011-06-17
申请人： Tsutomu Hori , Shin Harada , Makoto Sasaki , Hiroki Inoue , Kyoko Okita , Yasuo Namikawa , Satomi Itoh
发明人： Tsutomu Hori , Shin Harada , Makoto Sasaki , Hiroki Inoue , Kyoko Okita , Yasuo Namikawa , Satomi Itoh
IPC分类号： H01L21/762
CPC分类号： H01L29/7802 , H01L21/02002 , H01L21/02378 , H01L21/02529 , H01L21/0475 , H01L21/2007 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L2924/0002 , H01L2924/00
摘要： A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed.
摘要翻译：制备具有支撑部分和第一和第二碳化硅衬底的连接衬底。第一碳化硅衬底具有连接到支撑部分的第一背面，第一前侧表面和将第一背面和第一前侧表面相互连接的第一侧面。第二碳化硅衬底具有连接到支撑部分的第二背侧表面，第二前侧表面和将第二背面和第二前侧表面彼此连接并在第一前侧面之间形成间隙的第二侧表面侧表面和第二侧表面。形成用于填充间隙的填充部分。然后，对第一和第二前表面进行抛光。然后，将填充部分移除。然后，形成用于封闭间隙的封闭部分。

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