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11. 发明授权

US07001471B2 Method and apparatus for low-temperature annealing of metallization microstructures in the production of a microelectronic device 失效
标题翻译：用于微电子器件生产中金属化微结构的低温退火的方法和装置
公开(公告)号：US07001471B2
公开(公告)日：2006-02-21
申请号：US09386734
申请日：1999-08-31
申请人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
发明人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
IPC分类号： C22F1/08 , C25D5/50
CPC分类号： H01L21/67173 , C25D5/022 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/6723 , H01L21/76838 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
摘要翻译：阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。还提出了用于执行独特退火工艺的各种新型装置。

12. 发明授权

US06753251B2 Method for filling recessed micro-structures with metallization in the production of a microelectronic device 有权
标题翻译：在制造微电子器件时用金属化填充凹陷微结构的方法
公开(公告)号：US06753251B2
公开(公告)日：2004-06-22
申请号：US10112166
申请日：2002-03-28
申请人： Thomas L. Ritzdorf , Lyndon W. Graham
发明人： Thomas L. Ritzdorf , Lyndon W. Graham
IPC分类号： H01L214763
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed micro-structures at a surface of a semiconductor wafer with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties.
摘要翻译：阐述了一种用金属化在半导体晶片的表面填充凹入的微结构的方法。根据该方法，金属层以诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。

13. 发明授权

US07462269B2 Method for low temperature annealing of metallization micro-structures in the production of a microelectronic device 失效
标题翻译：金属化微结构在微电子器件生产中的低温退火方法
公开(公告)号：US07462269B2
公开(公告)日：2008-12-09
申请号：US09885451
申请日：2001-06-20
申请人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
发明人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
IPC分类号： C25D5/18 , C25D7/12
CPC分类号： H01L21/67173 , C25D5/022 , C25D5/50 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/6723 , H01L21/76838 , H01L21/76877 , H01L21/76883
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
摘要翻译：阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。还提出了用于执行独特退火工艺的各种新型装置。

14. 发明授权

US07229543B2 Apparatus for controlling and/or measuring additive concentration in an electroplating bath 有权
标题翻译：用于控制和/或测量电镀浴中的添加剂浓度的装置
公开(公告)号：US07229543B2
公开(公告)日：2007-06-12
申请号：US10372955
申请日：2003-02-26
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： C25D21/12 , G01F1/64 , G01N27/26 , G01N27/42
CPC分类号： G01N27/48 , G01N27/4161
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close-loop system is also set forth.
摘要翻译：提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。然后使用电分析测量来确定电镀溶液中的目标成分的量。还提出了一种包括前述方法和/或闭环系统中的一种或多种已知电分析技术的自动计量系统。

15. 发明授权

US07144805B2 Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density 有权
标题翻译：使用电化学沉积凹槽的亚微米金属化方法，其包括在第一电流密度下的第一沉积和以增加的电流密度的第二沉积
公开(公告)号：US07144805B2
公开(公告)日：2006-12-05
申请号：US10882664
申请日：2004-07-01
申请人： LinLin Chen , Lyndon W. Graham , Thomas L. Ritzdorf , Dakin Fulton , Robert W. Batz, Jr.
发明人： LinLin Chen , Lyndon W. Graham , Thomas L. Ritzdorf , Dakin Fulton , Robert W. Batz, Jr.
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/2885 , C25D5/02 , C25D5/10 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/76877 , H01L21/76883
摘要： Methods for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece are disclosed. The methods are suitable for use in connection with additive free as well as additive containing electroplating solutions. In accordance with one embodiment, the method includes making contact between the surface of the microelectronic workpiece and an electroplating solution in an electroplating cell that includes a cathode formed by the surface of the microelectronic workpiece and an anode disposed in electrical contact with the electroplating solution. Next, an initial film of the metal is deposited into the micro-recessed structure using at least a first electroplating waveform having a first current density. The first current density of the first electroplating waveform is provided to enhance the deposition of the metal at a bottom of the micro-recessed structure. After this initial plating, deposition of the metal is continued using at least a second electroplating waveform having a second current density. The second current density of the second electroplating waveform is provided to assist in reducing the time required to substantially complete filling of the micro-recessed structure.
摘要翻译：公开了在微电子工件的表面中将金属沉积到微凹陷结构中的方法。该方法适合与无添加剂结合使用，以及含有电镀溶液的添加剂。根据一个实施例，该方法包括使微电子工件的表面与电镀电池中的电镀液接触，该电镀槽包括由微电子工件的表面形成的阴极和与电镀溶液电接触的阳极。接下来，使用至少具有第一电流密度的第一电镀波形将金属的初始膜沉积到微凹陷结构中。提供第一电镀波形的第一电流密度以增强金属在微凹陷结构底部的沉积。在该初始电镀之后，使用具有第二电流密度的至少第二电镀波形继续沉积金属。提供第二电镀波形的第二电流密度以帮助减少基本上完成微凹陷结构填充所需的时间。

16. 发明授权

US06994776B2 Method and apparatus for low temperature annealing of metallization micro-structure in the production of a microelectronic device 有权
公开(公告)号：US06994776B2
公开(公告)日：2006-02-07
申请号：US09882613
申请日：2001-06-15
申请人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
发明人： Thomas L. Ritzdorf , E. Henry Stevens , LinLin Chen , Lyndon W. Graham , Curt Dundas
IPC分类号： C25D17/00 , C25B15/00 , C25B9/00
CPC分类号： H01L21/76877
摘要： A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

17. 再颁专利

USRE38931E1 Methods for controlling and/or measuring additive concentration in an electroplating bath 有权
标题翻译：用于控制和/或测量电镀浴中的添加剂浓度的方法
公开(公告)号：USRE38931E1
公开(公告)日：2006-01-10
申请号：US10266966
申请日：2003-02-27
申请人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
发明人： Lyndon W. Graham , Thomas C. Taylor , Thomas L. Ritzdorf , Fredrick A. Lindberg , Bradley C. Carpenter
IPC分类号： G01N27/48
CPC分类号： G01N27/4161 , G01N27/48
摘要： A method for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth in which the electroplating solution includes one or more constituents whose by-products skew an initial electrical response to an energy input of the electroanalytical technique. The method comprises a first step in which an electroanalytical measurement cycle of the target constituent is initiated by providing an energy input to a pair of electrodes disposed in the electroplating solution. The energy input to the pair of electrodes is provided for at least a predetermined time period corresponding to a time period in which the electroanalytical measurement cycle reaches a steady-state condition. In a subsequent step, an electroanalytical measurement of the energy output of the electroanalytical technique is taken after the electroanalytical measurement cycle has reached the steady-state condition. The electroanalytical measurement is then used to determine an amount of the target constituent in the electroplating solution. An automatic dosing system that includes the foregoing method and/or one or more known electroanalytical techniques in a close closed-loop system is also set forth.
摘要翻译：提出了一种使用电分析技术测量电镀溶液的目标成分的方法，其中电镀溶液包括一种或多种成分，其中副产物偏置对电分析技术的能量输入的初始电响应。该方法包括第一步骤，其中通过向布置在电镀溶液中的一对电极提供能量输入来启动目标成分的电分析测量循环。输入到该对电极的能量被提供至少一个对应于电分析测量周期达到稳态条件的时间段的预定时间段。在随后的步骤中，在电分析测量循环达到稳态条件之后，进行电分析技术的能量输出的电分析测量。然后使用电分析测量来确定电镀溶液中的目标成分的量。在<？delete-start id =“DEL-S-00001”date =“20060110”→> close <？delete-end id =“中包括上述方法和/或一个或多个已知的电分析技术的自动计量系统 DEL-S-00001“？> <？insert-start id =”INS-S-00001“date =”20060110“？> closed <？insert-end id =”INS-S-00001“？也阐述了。

18. 发明授权

US06663762B2 Plating system workpiece support having workpiece engaging electrode 失效
公开(公告)号：US06663762B2
公开(公告)日：2003-12-16
申请号：US10102040
申请日：2002-03-19
申请人： Martin C. Bleck , Lyndon W. Graham , Kyle M. Hanson
发明人： Martin C. Bleck , Lyndon W. Graham , Kyle M. Hanson
IPC分类号： C25D1706
CPC分类号： H01L21/68728 , H01L21/68785 , H01L21/68792
摘要： A semiconductor workpiece holder used in electroplating systems for plating metal layers onto a semiconductor workpieces, and is of particular advantage in connection with plating copper onto semiconductor materials. The workpiece holder includes electrode assemblies which have a contact part which connects to a distal end of an electrode shaft and bears against the workpiece and conducts current therebetween. The contact part is preferably made from a corrosion resistant material, such as platinum. The electrode assembly also preferably includes a dielectric layer which covers the distal end of the electrode shaft and seals against the contact part to prevent plating liquid from corroding the joint between these parts.

19. 发明授权

US06899805B2 Automated chemical management system executing improved electrolyte analysis method 失效
标题翻译：自动化学品管理系统执行改进的电解质分析方法
公开(公告)号：US06899805B2
公开(公告)日：2005-05-31
申请号：US09931268
申请日：2001-08-16
申请人： LinLin Chen , Lyndon W. Graham
发明人： LinLin Chen , Lyndon W. Graham
IPC分类号： G01N27/416 , G01N27/48 , G01N27/49 , G01N27/42
CPC分类号： G01N27/4161 , G01N27/48
摘要： A method for determining the concentration of an additive X of an electrochemical bath that includes at least one further component Y is set forth. In accordance with the method, a predetermined amount of a starting solution is provided. The starting solution comprises virgin makeup solution that is saturated with the further additive, or forms a mixed solution that is saturated with the further additive when combined with an amount of the electrochemical bath for measurement that is extracted for measurement. A predetermined amount of the extracted electrochemical bath is then added to the predetermined amount of the starting solution to form the mixed solution. At least one electroanalytical measurement cycle it is then executed using the mixed solution and the results of the measurement cycle are compared with a known measurement standard.
摘要翻译：阐述了确定电化学浴的添加剂X的浓度的方法，该方法包括至少一种其它组分Y。根据该方法，提供预定量的起始溶液。起始溶液包括用另外的添加剂饱和的初始补充溶液，或者当与用于测量提取的用于测量的电化学浴的量组合时，形成饱和了另外的添加剂的混合溶液。然后将预定量的提取的电化学浴加入到预定量的起始溶液中以形成混合溶液。然后使用混合溶液执行至少一个电分析测量循环，并将测量循环的结果与已知的测量标准进行比较。

20. 发明授权

US06814855B2 Automated chemical management system having improved analysis unit 失效
标题翻译：自动化学管理系统具有改进的分析单位
公开(公告)号：US06814855B2
公开(公告)日：2004-11-09
申请号：US09931283
申请日：2001-08-16
申请人： Lyndon W. Graham , Dakin Fulton
发明人： Lyndon W. Graham , Dakin Fulton
IPC分类号： G01N2728
CPC分类号： G01N27/4161 , G01N27/48
摘要： A method and apparatus for measuring a target constituent of an electroplating solution using an electroanalytical technique is set forth. In accordance with the method, at least two electrodes are employed to execute the electroanalytical technique. Gasses that are trapped or generated at the surface of one or both of the electrodes of the pair are reduced and/or removed by directing a flow of solution toward the electrode surface. This flow of solution against the electrode surface acts to automatically flush the generated gasses (typically in the form of small bubbles) from the electrode surface and generally eliminates the need for manual purging by an operator. Elimination of these gasses reduces or eliminates variability in the open circuit potential, and concomitant noise that would otherwise occur in the electroanalytical measurements.
摘要翻译：阐述了使用电分析技术测量电镀溶液的目标成分的方法和装置。根据该方法，使用至少两个电极来执行电分析技术。通过将溶液流引向电极表面而减少和/或去除在一对电极的一个或两个电极的表面处被捕获或产生的气体。针对电极表面的这种溶液流动用于自动地从电极表面冲洗产生的气体（通常为小气泡的形式），并且通常消除了操作者手动清除的需要。消除这些气体会降低或消除开路电位的变化性，否则会在电分析测量中产生伴随的噪音。

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