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20. 发明授权

US08300445B2 Nanowire and memory device using it as a medium for current-induced domain wall displacement 有权
标题翻译：纳米线和记忆装置使用它作为电流诱导畴壁位移的介质
公开(公告)号：US08300445B2
公开(公告)日：2012-10-30
申请号：US12746473
申请日：2008-12-04
申请人： Kyung-Jin Lee , Hyun-Woo Lee , Soon-Wook Jung
发明人： Kyung-Jin Lee , Hyun-Woo Lee , Soon-Wook Jung
IPC分类号： G11C19/00
CPC分类号： G11C11/14 , B82Y10/00 , G11C11/5607 , G11C19/0808
摘要： Disclosed herein are a nanowire and a current-induced domain wall displacement-type memory device using the same. The nanowire has perpendicular magnetic anisotropy and is configured in a manner that when a parameter Q, calculated by a saturation magnetization per unit area, a domain wall thickness and a spin polarizability of a ferromagnet that is a constituent material of the nanowire, has a value of (formula 1 should be inserted here) a domain wall thickness, a width “*′” and a thickness −* of the nanowire satisfy the relationship of (formula 2 should be inserted here) The present invention can be designed such that a current density capable of driving a memory device utilizing the current-driven domain wall displacement has a value of less than (formula 3 should be inserted here), through the determination of the optimal nanowire width and thickness satisfying a value of a critical current density, Jc for the domain wall displacement below a certain value required for commercialization, for a given material in the nanowire with perpendicular anisotropy. According to such a configuration of the present invention, the current density required for the domain wall displacement can be at least 10 times or further lowered than the current density in currently available nano wires. Therefore, the present invention is capable of solving the problems associated with high power consumption and malfunction of the device due to generation of Joule heat and is also capable of achieving low-cost production of memory devices. 3 × 10 8 ⁢ ⁢ A ⁢ / ⁢ cm 2 ≤ Q ≤ 10 9 ⁢ ⁢ A ⁢ / ⁢ cm 2 , ( 1 ) 1.39 T / λ + 4.51 ≤ W λ ≤ 1.53 T / λ + 4.44 ( 2 ) 10 7 ⁢ ⁢ A ⁢ / ⁢ cm 2 , ( 3 )
摘要翻译：本文公开了使用其的纳米线和电流诱导畴壁位移型存储器件。纳米线具有垂直磁各向异性，并且以如下方式配置：当由单位面积的饱和磁化强度计算的参数Q为作为纳米线的构成材料的铁磁体的畴壁厚度和自旋极化率时，具有值（式1中应插入）畴壁厚度，纳米线的宽度*'和厚度 - *满足（式2应插入）的关系本发明可以设计成使得电流密度能够通过确定满足临界电流密度值的最佳纳米线宽度和厚度，使用电流驱动畴壁位移来驱动存储器件的值小于（这里应插入公式3），对于对于具有垂直各向异性的纳米线中的给定材料，畴壁位移低于商业化所需的一定值。根据本发明的这种结构，畴壁位移所需的电流密度可以是目前可用的纳米线中的电流密度的10倍以上。因此，本发明能够解决由于焦耳热的产生而导致的高功耗和故障的问题，并且也能够实现低成本地生产存储器件。 3×10 8突发A / cm 2≤Q≤109令A / cm 2，（1）1.39 T /λ+4.51≤Wλ≤1.53T/λ+ 4.44（2）10 7 唔A / cm 2，（3）

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