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11. 发明申请

US20110124202A1 PLASMA PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20110124202A1
公开(公告)日：2011-05-26
申请号：US13019093
申请日：2011-02-01
申请人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji MATSUYAMA , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/318
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

12. 发明授权

US07875385B2 Battery, charging apparatus and electronic device 有权
标题翻译：电池，充电装置和电子装置
公开(公告)号：US07875385B2
公开(公告)日：2011-01-25
申请号：US12729350
申请日：2010-03-23
申请人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Masayuki Ishii , Shoichi Shintani , Yoshihiro Sato
发明人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Masayuki Ishii , Shoichi Shintani , Yoshihiro Sato
IPC分类号： H01M2/04
CPC分类号： H01M2/1061 , H01M2/30 , H01M2/342 , H01M10/46
摘要： In a battery including a battery cell formed in a flattened substantially parallelepiped shape and a terminal contacting section electrically connected to the battery cell, at one end in the longitudinal direction of a face of the battery opposing to the face on which the terminal contacting section is provided, a projecting portion which projects in the longitudinal direction of the face is provided. Meanwhile, another projecting portion which projects in the longitudinal direction of the face is provided at the other end. The projecting portions may have projecting lengths different from each other or may have projecting lengths and projecting thicknesses different from each other. A charging apparatus into which the battery is to be installed includes an accommodating section for the battery which in turn includes projection accommodating portions configured to individually accommodate the projecting portions.
摘要翻译：在包括形成为扁平大致平行六面体形状的电池单元的电池和与电池单元电连接的端子接触部分中，在电池的与端子接触部分的面相对的面的纵向方向上的一端设置有设置在面部的长度方向突出的突出部。同时，在另一端设置有在面的纵向突出的另一突出部。突出部分可以具有彼此不同的突出长度，或者可以具有彼此不同的突出长度和突出厚度。要安装电池的充电装置包括一个用于电池的容纳部分，该容纳部分又包括被构造成分别容纳突出部分的突起容纳部分。

13. 发明申请

US20100323529A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20100323529A1
公开(公告)日：2010-12-23
申请号：US12521645
申请日：2007-12-20
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/314 , B05C11/00
CPC分类号： H01L21/28202 , H01J37/32192 , H01L21/67109 , H01L21/67115
摘要： A method for forming an insulating film includes a step of preparing a substrate, which is to be processed and has silicon exposed on the surface; a step of performing first nitriding to the silicon exposed on the surface of the substrate, and forming a silicon nitride film having a thickness of 0.2 nm but not more than 1 nm on the surface of the substrate; and a step of performing first heat treatment to the silicon nitride film in N2O atmosphere and forming a silicon nitride film. This method may further include a step of performing second nitriding to the silicon oxynitride film, and furthermore, may include a step of performing second heat treatment to the silicon oxynitride film after the second nitriding.
摘要翻译：一种形成绝缘膜的方法包括制备待加工的基片并且在表面上具有硅的步骤; 对在基板表面露出的硅进行第一次氮化，在基板表面形成厚度为0.2nm以上且1nm以下的氮化硅膜的工序; 以及对N 2 O气氛中的氮化硅膜进行第一热处理并形成氮化硅膜的工序。该方法还可以包括对氮氧化硅膜进行第二氮化的步骤，此外，可以包括在第二次氮化之后对氮氧化硅膜进行第二热处理的步骤。

14. 发明申请

US20100267171A1 MAGNETIC STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：磁性存储装置及其制造方法
公开(公告)号：US20100267171A1
公开(公告)日：2010-10-21
申请号：US12826852
申请日：2010-06-30
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： H01L21/02
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L43/08
摘要： In an MRAM, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.
摘要翻译：在MRAM中，弯曲区域（206）形成在位线（202）中，该弯曲区域（206）处于弯曲形状，TMR元件（203）作为中心，在这种情况下为粗糙 U形（在所示示例中，大致倒U形）。其中形成弯曲区域（206）的位线（202）包括在由弯曲区域（206）形成的空间中的TMR元件（203）。由于这种相对简单的结构，这种结构实现了高度可靠的MRAM，其确保了在将数据写入存储器单元期间基本上节省功率，同时满足对器件进一步小型化的要求。

15. 发明申请

US20090197403A1 METHOD FOR FORMING INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：形成绝缘膜的方法和制造半导体器件的方法
公开(公告)号：US20090197403A1
公开(公告)日：2009-08-06
申请号：US12302810
申请日：2007-05-30
申请人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
发明人： Minoru Honda , Yoshihiro Sato , Toshio Nakanishi
IPC分类号： H01L21/318 , H01L21/336
CPC分类号： H01L21/28202 , H01L21/3185 , H01L29/518
摘要： A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the target substrate provided with the silicon nitride film in an N2O atmosphere, and nitriding the silicon oxynitride film.
摘要翻译：一种形成绝缘膜的方法包括：在硅表面上形成氮化硅膜，使其表面上露出硅的靶基板经受硅氮化处理，通过加热设置有硅的氮化硅膜，氮化硅膜在N2O气氛中氮化氮氧化硅膜。

16. 发明申请

US20090194790A1 Field effect transister and process for producing the same 有权
标题翻译：场效应转运器及其生产方法
公开(公告)号：US20090194790A1
公开(公告)日：2009-08-06
申请号：US12318779
申请日：2009-01-08
申请人： Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Takehiko Nomura , Seikoh Yoshida , Masayuki Iwami , Jiang Li
发明人： Yoshihiro Sato , Hiroshi Kambayashi , Yuki Niiyama , Takehiko Nomura , Seikoh Yoshida , Masayuki Iwami , Jiang Li
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/0843 , H01L29/2003 , H01L29/205 , H01L29/267 , H01L29/4232 , H01L29/4236 , H01L29/66462 , H01L29/66522 , H01L29/778 , H01L29/7783 , H01L29/7789
摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess part and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess part; a gate electrode formed on the insulating layer at the recess part; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess part in between and electrically connected to the semiconductor operating layer. The recess part includes a side wall protruding and inclined relative to the semiconductor operating layer.
摘要翻译：场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。场效应晶体管包括衬底; 半导体工作层，具有凹部并形成在所述基板上; 形成在包括凹部的半导体操作层上的绝缘层; 形成在所述凹部的所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。凹部包括相对于半导体操作层突出并倾斜的侧壁。

17. 发明申请

US20070159877A1 Magnetic storage device and method of manufacturing the same 失效
标题翻译：磁存储装置及其制造方法
公开(公告)号：US20070159877A1
公开(公告)日：2007-07-12
申请号：US11723209
申请日：2007-03-19
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , H01L43/08
摘要： In an MRAM of the invention, a curved region (206) is formed in a bit line (202), and this curved region (206) is in bent shape, with a TMR element (203) serving as a center, in this case, in rough U shape (in the illustrated example, in roughly inverted U shape). The bit line (202) in which the curved region (206) is formed includes the TMR element (203) in a space formed by the curved region (206). Thanks to such relatively simple construction, this construction realizes a highly reliable MRAM which ensures that power is substantially saved during data writing into a memory cell while meeting requirements for further miniaturization of the device.
摘要翻译：在本发明的MRAM中，弯曲区域（206）形成在位线（202）中，该弯曲区域（206）处于弯曲形状，TMR元件（203）作为中心，在这种情况下，在粗U形（在所示示例中，大致倒U形）。其中形成弯曲区域（206）的位线（202）包括在由弯曲区域（206）形成的空间中的TMR元件（203）。由于这种相对简单的结构，这种结构实现了高度可靠的MRAM，其确保了在将数据写入存储器单元期间基本上节省功率，同时满足对器件进一步小型化的要求。

18. 发明申请

US20070085919A1 Smear-correcting device 有权
标题翻译：涂片校正装置
公开(公告)号：US20070085919A1
公开(公告)日：2007-04-19
申请号：US11546424
申请日：2006-10-12
申请人： Yoshihiro Sato
发明人： Yoshihiro Sato
IPC分类号： H04N5/335
CPC分类号： H04N5/372 , H04N5/3595
摘要： A smear-correcting device that corrects a smear of an image signal from a CCD having photoelectric conversion elements including a smear-correcting photoelectric conversion element, is provided and includes: a determining section determining whether a smear component is contained in an image signal from the photoelectric conversion elements other than the smear-correcting photoelectric conversion element, based on a corresponding smear-correcting signal from the smear-correcting photoelectric conversion element; a section correcting the smear of the image signal determined to contain the smear component, based on the corresponding smear-correcting signal; and an output section that outputs an image signal. When the determining section determines that the image signal contains a smear component, the output section outputs the image signal after correcting a smear of the image signal, and when the determining section determines that the image signal does not contains the smear component, the output section outputs the image signal without smear correction.
摘要翻译：提供了一种校正来自具有包含涂片校正光电转换元件的光电转换元件的CCD的图像信号的拖尾的涂抹校正装置，包括：确定部，确定来自所述图像信号的图像信号中是否包含拖尾分量基于来自涂片校正光电转换元件的相应的涂片校正信号，除了涂片校正光电转换元件之外的光电转换元件; 基于相应的涂片校正信号校正被确定为包含拖尾分量的图像信号的拖尾的部分; 以及输出图像信号的输出部。当确定部分确定图像信号包含拖尾分量时，输出部分在校正图像信号的拖尾之后输出图像信号，并且当确定部分确定图像信号不包含拖尾分量时，输出部分输出图像信号，无涂片校正。

19. 发明申请

US20070059944A1 Plasma processing method and computer storage medium 失效
标题翻译：等离子体处理方法和计算机存储介质
公开(公告)号：US20070059944A1
公开(公告)日：2007-03-15
申请号：US11514236
申请日：2006-09-01
申请人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
发明人： Seiji Matsuyama , Toshio Nakanishi , Shigenori Ozaki , Hikaru Adachi , Koichi Takatsuki , Yoshihiro Sato
IPC分类号： H01L21/471
CPC分类号： C23C8/36 , H01J37/32192 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L29/518
摘要： According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.
摘要翻译：根据本发明，当通过微波产生的等离子体的氮化处理被施加到其上形成氧化膜的基板上以形成氧氮化物膜时，间歇地供给微波。通过间歇地供给微波，根据电子温度的降低，离子轰击降低，氮化物在氧化膜中的扩散速度降低，结果使得可以防止氮浓缩到基板 - 氮氧化物膜的侧面界面，以增加其中的氮浓度。因此，可以提高氮氧化物膜的质量，导致漏电流减小，操作速度提高，NBTI电阻改善。

20. 发明申请

US20070045639A1 Semiconductor electronic device 审中-公开
标题翻译：半导体电子器件
公开(公告)号：US20070045639A1
公开(公告)日：2007-03-01
申请号：US11508921
申请日：2006-08-24
申请人： Sadahiro Kato , Yoshihiro Sato , Seikoh Yoshida
发明人： Sadahiro Kato , Yoshihiro Sato , Seikoh Yoshida
IPC分类号： H01L33/00
CPC分类号： H01L29/7787 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/205
摘要： A semiconductor electronic device includes a buffer layer formed on a substrate, and a semiconductor operating layer that is formed on the buffer layer. The semiconductor operating layer includes a nitride-based compound semiconductor and. The buffer layer includes at least one composite layer that includes a first layer and a second layer. A lattice-constant difference between the first layer and the second layer is equal to or more than 0.2 percent.
摘要翻译：半导体电子器件包括形成在衬底上的缓冲层和形成在缓冲层上的半导体操作层。半导体工作层包括氮化物基化合物半导体。缓冲层包括至少一个包括第一层和第二层的复合层。第一层和第二层之间的晶格常数差等于或大于0.2％。

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