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    • 12. 发明授权
    • Plating apparatus and method
    • 电镀装置及方法
    • US07112264B2
    • 2006-09-26
    • US10606956
    • 2003-06-27
    • Hidetoshi TsuzukiNoboru ToyamaYasuyoshi TakaiRyo HayashiYuichi SonodaMasumitsu IwataYusuke Miyamoto
    • Hidetoshi TsuzukiNoboru ToyamaYasuyoshi TakaiRyo HayashiYuichi SonodaMasumitsu IwataYusuke Miyamoto
    • C25D5/02C25D7/06C25D17/00
    • C25D7/0671C25D5/028
    • A plating apparatus includes a plating vessel for holding a plating bath containing at least metal ions, a conveying device for conveying a long conductive substrate and immersing the long conductive substrate in the plating bath, a facing electrode disposed in the plating bath so as to face one surface of the conductive substrate, a voltage application device for performing plating on the one surface of the conductive substrate by applying a voltage between the conductive substrate and the facing electrode, and a film-deposition suppression device fixedly disposed in the plating vessel so that at least a portion of the film-deposition suppression means is close to shorter-direction edges of the conductive substrate. At least a portion of the film-deposition suppression device close to the shorter-direction edges of the conductive substrate is conductive. By holding the conductive portion of the film-deposition suppression device and the conductive substrate at substantially the same potential, film deposition on the other surface of the conductive substrate is suppressed.
    • 电镀装置包括用于保持至少含有金属离子的电镀槽的电镀容器,用于输送长导电性基板并将长导电性基材浸渍在电镀槽中的输送装置,设置在镀浴中的面对电极, 导电基板的一个表面,通过在导电基板和对置电极之间施加电压在导电基板的一个表面上进行电镀的电压施加装置和固定地设置在电镀槽中的成膜抑制装置,使得 至少一部分成膜抑制装置接近导电基板的短边缘。 靠近导电基板的短边缘的薄膜沉积抑制装置的至少一部分是导电的。 通过将成膜抑制装置的导电部分和导电基板保持在基本相同的电位,抑制导电基板的另一个表面上的成膜。