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    • 11. 发明授权
    • Method of driving display device, display device, and electronic appliance
    • 驱动显示装置,显示装置和电子设备的方法
    • US08786527B2
    • 2014-07-22
    • US12906539
    • 2010-10-18
    • Atsushi UmezakiRyo Arasawa
    • Atsushi UmezakiRyo Arasawa
    • G09G3/30
    • G09G3/22G09G3/3233G09G3/3266G09G2300/0465G09G2300/0819G09G2310/0251G09G2310/0262G09G2310/0264G09G2310/061
    • The present invention is a method of driving a display device including a transistor, a capacitor one electrode of which is electrically connected to a first terminal of the transistor and the other electrode of which is electrically connected to a gate of the transistor, and a display element a first electrode of which is electrically connected to a second terminal of the transistor, including the steps of: electrically connecting the gate of the transistor, the first terminal of the transistor, and both electrodes of the capacitor to a first line in a first period; electrically connecting the gate of the transistor and the other electrode of the capacitor to a second line in a second period; and electrically connecting the first terminal of the transistor and one electrode of the capacitor to a third line in a third period.
    • 本发明是一种驱动显示装置的方法,该显示装置包括晶体管,其电极的一个电极电连接到晶体管的第一端子,而另一个电极电连接到晶体管的栅极,显示器 元件,其第一电极电连接到晶体管的第二端子,包括以下步骤:将晶体管的栅极,晶体管的第一端子和电容器的两个电极电连接到第一线路中的第一线 期; 在第二周期中将晶体管的栅极和电容器的另一个电极电连接到第二线路; 以及在第三周期中将晶体管的第一端子和电容器的一个电极电连接到第三线路。
    • 13. 发明授权
    • Semiconductor device
    • 半导体器件
    • US08232556B2
    • 2012-07-31
    • US13099840
    • 2011-05-03
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • H01L27/14
    • H01L27/1266H01L27/124H01L29/78603H01L29/78606
    • An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
    • 本发明的目的是提供一种半导体器件,其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时,诸如晶体管的元件的损伤也减小。 半导体器件包括:设置在基板上的沟道形成区域和杂质区域的半导体膜,设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜,设置成覆盖的第一层间绝缘膜 所述第一导电膜,设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜,设置在所述第二导电膜上的第二层间绝缘膜,以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜,以通过开口与杂质区电连接。
    • 15. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US09178071B2
    • 2015-11-03
    • US13225703
    • 2011-09-06
    • Hidekazu MiyairiKoji DairikiShunpei YamazakiRyo Arasawa
    • Hidekazu MiyairiKoji DairikiShunpei YamazakiRyo Arasawa
    • H01L21/336H01L29/786H01L29/66
    • H01L29/78678H01L29/66765H01L29/78606H01L29/78648H01L29/78669H01L29/78696
    • Provided is a method for manufacturing a semiconductor device with fewer masks and in a simple process. A gate electrode is formed. A gate insulating film, a semiconductor film, an impurity semiconductor film, and a conductive film are stacked in this order, covering the gate electrode. A source electrode and a drain electrode are formed by processing the conductive film. A source region, a drain region, and a semiconductor layer, an upper part of a portion of which does not overlap with the source region and the drain region is removed, are formed by processing the upper part of the semiconductor film, while the impurity semiconductor film is divided. A passivation film over the gate insulating film, the semiconductor layer, the source region, the drain region, the source electrode, and the drain electrode are formed. An etching mask is formed over the passivation film. At least the passivation film and the semiconductor layer are processed to have an island shape while an opening reaching the source electrode or the drain electrode is formed, with the use of the etching mask. The etching mask is removed. A pixel electrode is formed over the gate insulating film and the passivation film.
    • 提供一种用于制造具有较少掩模的半导体器件的方法,并且在简单的过程中。 形成栅电极。 依次层叠栅绝缘膜,半导体膜,杂质半导体膜和导电膜,覆盖栅电极。 通过处理导电膜形成源电极和漏电极。 通过处理半导体膜的上部,形成源区域,漏极区域和半导体层,其部分的上部不与源极区域和漏极区域重叠,而杂质 半导体薄膜被划分。 形成栅极绝缘膜,半导体层,源极区域,漏极区域,源极电极和漏极电极之后的钝化膜。 在钝化膜上形成蚀刻掩模。 通过使用蚀刻掩模,至少钝化膜和半导体层被加工成具有岛状,同时形成到达源电极或漏电极的开口。 去除蚀刻掩模。 在栅极绝缘膜和钝化膜上形成像素电极。
    • 16. 发明授权
    • Method for driving liquid crystal display device
    • 驱动液晶显示装置的方法
    • US09076401B2
    • 2015-07-07
    • US13013231
    • 2011-01-25
    • Hiroyuki MiyakeRyo Arasawa
    • Hiroyuki MiyakeRyo Arasawa
    • G09G3/34G09G3/36G09G5/10
    • G09G3/3648G09G3/3406G09G2300/0443G09G2300/0456G09G2320/066G09G2320/10G09G2330/021G09G2340/0435
    • In a liquid crystal display device capable of displaying a moving image and a still image, a reduction in contrast due to light scattering in a reflective pixel portion or the like is suppressed and consumed power is reduced. As a driving method of a transflective liquid crystal display device including a plurality of pixels each including a plurality of light-transmitting pixel portions and a reflective pixel portion, an image signal for color display is supplied to the plurality of light-transmitting pixel portions and a signal for black display is supplied to the reflective pixel portion in a moving-image display period, and an image signal of black-and-white grayscale is supplied to the plurality of light-transmitting pixel portions and the reflective pixel portion in a still-image display period.
    • 在能够显示运动图像和静止图像的液晶显示装置中,抑制由反射像素部分等中的光散射引起的对比度的降低,并且消耗功率降低。 作为包括多个透光像素部分和反射像素部分的多个像素的半透射型液晶显示装置的驱动方法,用于彩色显示的图像信号被提供给多个透光像素部分,并且 用于黑色显示的信号在运动图像显示周期中被提供给反射像素部分,并且黑白灰度的图像信号被提供给多个透光像素部分和反射像素部分中的静止 - 图像显示周期。
    • 18. 发明申请
    • METHOD FOR DRIVING LIQUID CRYSTAL DISPLAY DEVICE
    • 驱动液晶显示装置的方法
    • US20110187758A1
    • 2011-08-04
    • US13013231
    • 2011-01-25
    • Hiroyuki MiyakeRyo Arasawa
    • Hiroyuki MiyakeRyo Arasawa
    • G09G5/10G09G3/36
    • G09G3/3648G09G3/3406G09G2300/0443G09G2300/0456G09G2320/066G09G2320/10G09G2330/021G09G2340/0435
    • In a liquid crystal display device capable of displaying a moving image and a still image, a reduction in contrast due to light scattering in a reflective pixel portion or the like is suppressed and consumed power is reduced. As a driving method of a transflective liquid crystal display device including a plurality of pixels each including a plurality of light-transmitting pixel portions and a reflective pixel portion, an image signal for color display is supplied to the plurality of light-transmitting pixel portions and a signal for black display is supplied to the reflective pixel portion in a moving-image display period, and an image signal of black-and-white grayscale is supplied to the plurality of light-transmitting pixel portions and the reflective pixel portion in a still-image display period.
    • 在能够显示运动图像和静止图像的液晶显示装置中,抑制由反射像素部分等中的光散射引起的对比度的降低,并且消耗功率降低。 作为包括多个透光像素部分和反射像素部分的多个像素的半透射型液晶显示装置的驱动方法,用于彩色显示的图像信号被提供给多个透光像素部分,并且 用于黑色显示的信号在运动图像显示周期中被提供给反射像素部分,并且黑白灰度的图像信号被提供给多个透光像素部分和反射像素部分中的静止 - 图像显示周期。
    • 19. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07952100B2
    • 2011-05-31
    • US11898749
    • 2007-09-14
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • Ryo ArasawaAya MiyazakiShigeharu MonoeShunpei Yamazaki
    • H01L27/14
    • H01L27/1266H01L27/124H01L29/78603H01L29/78606
    • An object is to provide a semiconductor device in which damages of an element such as a transistor are reduced even when physical force such as bending is externally applied to generate stress in the semiconductor device. A semiconductor device includes a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate, a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween, a first interlayer insulating film provided to cover the first conductive film, a second conductive film provided over the first interlayer insulating film so as to overlap with at least part of the impurity region, a second interlayer insulating film provided over the second conductive film, and a third conductive film provided over the second interlayer insulating film so as to be electrically connected to the impurity region through an opening.
    • 本发明的目的是提供一种半导体器件,其中即使当外部施加诸如弯曲的物理力在半导体器件中产生应力时,诸如晶体管的元件的损伤也减小。 半导体器件包括:设置在基板上的沟道形成区域和杂质区域的半导体膜,设置在沟道形成区域上的栅极绝缘膜之间的第一导电膜,设置成覆盖的第一层间绝缘膜 所述第一导电膜,设置在所述第一层间绝缘膜上以与所述杂质区的至少一部分重叠的第二导电膜,设置在所述第二导电膜上的第二层间绝缘膜,以及设置在所述第二导电膜上的第二导电膜 层间绝缘膜,以通过开口与杂质区电连接。