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    • 11. 发明授权
    • Nitride-based semiconductor device of reduced voltage drop, and method of fabrication
    • 降低电压降的氮化物半导体器件及其制造方法
    • US07671375B2
    • 2010-03-02
    • US11378963
    • 2006-03-17
    • Koji OtsukaTetsuji MokuJunji SatoYoshiki TadaTakashi Yoshida
    • Koji OtsukaTetsuji MokuJunji SatoYoshiki TadaTakashi Yoshida
    • H01L33/00
    • H01L29/267H01L21/02381H01L21/02458H01L21/02507H01L21/0254H01L21/02576H01L21/02579H01L21/0262H01L29/2003H01L33/007
    • A light-emitting diode is built on a silicon substrate which has been doped with a p-type impurity to possess sufficient conductivity to provide part of the current path through the LED. The p-type silicon substrate has epitaxially grown thereon a buffer region of n-type AlInGaN. Further grown epitaxially on the buffer region is the main semiconductor region of the LED which comprises a lower confining layer of n-type GaN, an active layer for generating light, and an upper confining layer of p-type GaN. In the course of the growth of the buffer region and main semiconductor region there occurs a thermal diffusion of gallium and other Group III elements from the buffer region into the p-type silicon substrate, with the consequent creation of a p-type low-resistance region in the substrate. Interface levels are created across the heterojunction between p-type silicon substrate and n-type buffer region. The interface levels expedite carrier transport from substrate to buffer region, contributing to reduction of the drive voltage requirement of the LED.
    • 在已经掺杂有p型杂质的硅衬底上建立发光二极管以具有足够的导电性以提供通过LED的电流路径的一部分。 p型硅衬底在其上外延生长n型AlInGaN的缓冲区。 在缓冲区域外延生长的是LED的主要半导体区域,其包括n型GaN的下约束层,用于产生光的有源层和p型GaN的上部约束层。 在缓冲区和主半导体区域的生长过程中,发生镓和其他III族元素从缓冲区到p型硅衬底的热扩散,随之产生p型低电阻 区域。 在p型硅衬底和n型缓冲区之间的异质结上形成界面电平。 接口电平加快了从衬底到缓冲区域的载流子传输,有助于降低LED的驱动电压要求。
    • 12. 发明申请
    • BAG WITH POURING SPOUT
    • BAG与POURING SPOUT
    • US20090129706A1
    • 2009-05-21
    • US11995158
    • 2006-05-15
    • Koji OtsukaWakako YoshimuraYasunori Honzawa
    • Koji OtsukaWakako YoshimuraYasunori Honzawa
    • B65D33/16
    • B65D75/5866B65D75/5822Y10S383/906
    • There is provided a bag with a pouring spout that can surely improve opening properties and shape retention of a spout port part without the need to render the spout port part bulky, can prevent clogging of the spout port part caused by flexing of the spout port part, and can reliably and easily spout the contents of the bag. The bag with a pouring spout comprises a narrow-width spout port part 10 provided at one end of a laminated film bag, characterized in that in the region of the spout port part, a tape shaped sheet material 50, which has been cut into a desired length, is applied to the inner surface of at least one of laminated films 1,1′ provided on both respective sides of the bag.
    • 提供了一种具有倾倒口的袋子,其可以确保地改善喷嘴端口部件的开口性能和形状保持性,而不需要使出口部分膨胀,从而可以防止由于出口部分的弯曲而引起的喷口端口部分的堵塞 ,并能够可靠且容易地喷出袋的内容物。 具有倾倒口的袋子包括设置在层压薄膜袋的一端的窄宽度的出口口部分10,其特征在于,在所述出口端口部分的区域中,已经切割成 所需长度被施加到设置在袋的两侧的层压膜1,1'中的至少一个的内表面。
    • 13. 发明授权
    • Method and apparatus for measuring holding distortion
    • 测量保持失真的方法和装置
    • US07342666B2
    • 2008-03-11
    • US11258955
    • 2005-10-27
    • Nobuaki UekiKoji Otsuka
    • Nobuaki UekiKoji Otsuka
    • G01B11/02G01L1/24
    • G03F1/84G01B11/2441
    • There are carried out a first measurement operation for measuring the shape of a front surface of a sample held in a held state, a second measurement operation for measuring the shape of a back surface of the sample held in the same state, and a third measurement operation for measuring the shape of the back surface of the sample held so as to cause inverse distortion. First data are acquired on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the second measurement operation. Second data are obtained on the basis of the front surface shape data obtained through the first measurement operation and the back surface shape data obtained through the third measurement operation. Holding distortion is determined on the basis of the first and second data.
    • 进行用于测量保持在保持状态的样品的正面的形状的第一测量操作,用于测量保持在相同状态的样品的背面的形状的第二测量操作和第三测量 用于测量保持的样品的背面的形状以产生反变形的操作。 基于通过第一测量操作获得的前表面形状数据和通过第二测量操作获得的背面形状数据获取第一数据。 基于通过第一测量操作获得的前表面形状数据和通过第三测量操作获得的背面形状数据获得第二数据。 基于第一和第二数据确定保持失真。
    • 16. 发明申请
    • Method of fabricating light-emitting semiconductor device
    • 制造发光半导体器件的方法
    • US20060275937A1
    • 2006-12-07
    • US11502642
    • 2006-08-11
    • Hidekazu AoyagiKoji OtsukaMasahiro Sato
    • Hidekazu AoyagiKoji OtsukaMasahiro Sato
    • H01L21/00
    • H01L33/14H01L33/007H01L33/04
    • A light-emitting diode having a silicon substrate on which there are successively formed a buffer layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer, and a current spreading layer. The current spreading layer is a lamination of a first and a second sublayer arranged alternately a required number of times. Composed of different compound semiconductors, the alternating sublayers of the current spreading layer create heterojunctions for offering the two-dimensional gas effect. The current spreading layer is so low in resistivity in a direction parallel to its major surface from which light is emitted, that the current is favorably spread therein for improved efficiency of light emission. A front electrode in the form of a metal pad is mounted centrally on the major surface of the current spreading layer in ohmic contact therewith.
    • 具有硅衬底的发光二极管,其上依次形成缓冲层,p型氮化物半导体层,有源层,n型氮化物半导体层和电流扩展层。 电流扩展层是交替需要次数布置的第一和第二子层的叠层。 由不同的化合物半导体组成,电流扩展层的交替子层产生用于提供二维气体效应的异质结。 电流扩散层在平行于其从其发射光的主表面的方向上的电阻率如此低,使得电流有利地扩散在其中以提高发光效率。 金属焊盘形式的前电极以电流扩散层的主表面中心地安装在其与其电阻接触的位置。
    • 18. 发明授权
    • Color judging apparatus, color judging method, image processing circuit and program
    • 颜色判断装置,颜色判断方法,图像处理电路和程序
    • US08942472B2
    • 2015-01-27
    • US13634560
    • 2011-05-20
    • Koji OtsukaOsamu Manba
    • Koji OtsukaOsamu Manba
    • G06K9/00H04N1/60H04N9/73
    • H04N1/6027H04N1/6005H04N9/73
    • With a pixel included in image data as a reference pixel, a pixel that shares the same pixel value as the reference pixel or a pixel similar to the reference pixel is judged as a shared pixel, and for the pixel judged as the shared pixel, color of the reference pixel is regarded as a color judgment result of the shared pixel, thus making it possible to reduce color calculation processing for the shared pixel. This makes it possible to provide a color judging apparatus operating at higher speed and the like. Thereby, it is possible to provide the color judging apparatus operable at high speed and the like by reducing the number of times of the color calculation processing executed for an input image.
    • 使用包含在图像数据中作为参考像素的像素,将与参考像素相同的像素值的像素或与参考像素类似的像素判断为共享像素,并且对于被判断为共享像素的像素,颜色 被认为是共享像素的颜色判断结果,从而可以减少共享像素的颜色计算处理。 这使得可以提供以更高速度等操作的颜色判断装置。 由此,可以通过减少为输入图像执行的颜色计算处理的次数来提供可高速操作的颜色判断装置。
    • 19. 发明授权
    • Lighting device
    • 照明设备
    • US08608350B2
    • 2013-12-17
    • US13208014
    • 2011-08-11
    • Koji Otsuka
    • Koji Otsuka
    • F21V5/04
    • H01L33/58F21V5/007F21V5/04F21V7/0091F21Y2103/10F21Y2105/10F21Y2115/10G02B19/0028G02B19/0066H01L25/0753H01L2924/0002H01L2924/00
    • A lighting device is provided to include a plurality of lens bodies. The connecting portion connecting the plurality of lens bodies includes a first major surface and a second major surface opposite to the first major surface. The first major surface is in contact with the lateral portion at a first contact under an outer edge of the leading lens. The second major surface is in contact with the lateral portion at a second contact located below the first contact. The first contact is located outside of a point of intersection along the first major surface with respect to the center of each lens body, the point of intersection at which an extraction of the first major surface intersects with an extension of a ray of the emitted light which is incident on the light incident surface and is projected on the second contact.
    • 提供照明装置以包括多个透镜体。 连接多个透镜体的连接部分包括与第一主表面相对的第一主表面和第二主表面。 第一主表面在引导透镜的外边缘处的第一接触处与侧部接触。 第二主表面位于第一触点下方的第二触点处与侧部接触。 相对于每个透镜体的中心,第一触点位于沿第一主表面的交点以外,第一主表面的提取与发射光线的延伸相交的交点 其入射在光入射表面上并且被投影在第二触点上。