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11. 发明授权

US09496743B2 Power receiving device and wireless power feed system 有权
标题翻译：电力接收装置和无线供电系统
公开(公告)号：US09496743B2
公开(公告)日：2016-11-15
申请号：US13207474
申请日：2011-08-11
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H02J7/00 , H02J7/02 , H04B5/00
CPC分类号： H02J50/05 , H02J7/025 , H02J50/12 , H02J50/40 , H04B5/00 , H04B5/0012
摘要： An electric field coupling type wireless power feed system including a power transmitting device and a power receiving device which is unlikely to be affected by a noise and which has a reduced size is provided. A capacitive coupling type wireless power feed system includes a power receiving device including a first electrode using an oxide semiconductor film, and a battery and a power transmitting device including a second electrode, wherein the battery is charged by a voltage generated based on an electric field generated between the first electrode and the second electrode. The charging of the battery may be stopped by applying a positive direct-current voltage from a charge control circuit to the first electrode.
摘要翻译：提供了一种电场耦合型无线馈电系统，其包括不太可能受噪声影响并且具有减小的尺寸的电力传输装置和电力接收装置。一种电容耦合型无线馈电系统，包括：电源接收装置，包括使用氧化物半导体膜的第一电极，以及包括第二电极的电池和电力传输装置，其中，所述电池通过基于电场产生的电压进行充电在第一电极和第二电极之间产生。可以通过将来自充电控制电路的正直流电压施加到第一电极来停止电池的充电。

12. 发明授权

US09350295B2 Modulation circuit and semiconductor device including the same 有权
标题翻译：调制电路和包括其的半导体器件
公开(公告)号：US09350295B2
公开(公告)日：2016-05-24
申请号：US12948225
申请日：2010-11-17
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H01L29/786 , H03C1/36
CPC分类号： H01L29/7869 , G06K19/07775 , H01L23/66 , H01L27/0629 , H01L28/20 , H01L28/40 , H01L29/78693 , H01L29/78696 , H01L2223/6677 , H03C1/36 , H04M2201/04 , H04M2201/06
摘要： A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
摘要翻译：调制电路包括负载和用作开关的晶体管。该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。晶体管的截止电流为1×10-13A或更小。调制电路包括负载，用作开关的晶体管和二极管。负载，晶体管和二极管串联连接在天线的端子之间。该晶体管具有氢浓度为5×1019 / cm3以下的氧化物半导体层。晶体管的截止电流为1×10-13A或更小。根据输入到晶体管的栅极的信号来控制晶体管的导通/截止。负载是电阻器，电容器或电阻器和电容器的组合。

13. 发明授权

US09143011B2 Power receiving device and contactless power feeding system 有权
标题翻译：电力接收装置和非接触馈电系统
公开(公告)号：US09143011B2
公开(公告)日：2015-09-22
申请号：US13612990
申请日：2012-09-13
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H02J7/00 , H02J17/00 , H01F38/14
CPC分类号： H02J50/12 , H01F38/14 , H02J7/025 , H02J17/00
摘要： A power receiving device includes a resonant coil, an electromagnetic coupling coil, a rectifier circuit, a smoothing circuit, a voltage converter circuit which converts a voltage value of DC power into another voltage value, a control circuit which obtains voltage and current values of the DC power input to the voltage converter circuit, calculates an impedance from the obtained voltage and current values, and generates a pulse width modulation signal for controlling an output voltage and an output current of the voltage converter circuit, and a load to which the output voltage and the output current of the voltage converter circuit are input. The duty ratio of the pulse width modulation signal is determined so that the impedance calculated by the control circuit becomes close to an impedance for the maximum efficiency in transferring the AC power. The power receiving device is included in a contactless power feeding system.
摘要翻译：电力接收装置包括谐振线圈，电磁耦合线圈，整流电路，平滑电路，将直流电力值转换为另一电压值的电压转换器电路，获得电压和电流值的控制电路直流电压输入到电压转换器电路，根据获得的电压和电流值计算阻抗，并产生用于控制电压转换器电路的输出电压和输出电流的脉宽调制信号，以及输出电压输入电压转换电路的输出电流。确定脉冲宽度调制信号的占空比，使得由控制电路计算的阻抗变得接近用于传递AC电力的最大效率的阻抗。电力接收装置包括在非接触供电系统中。

14. 发明授权

US08928466B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08928466B2
公开(公告)日：2015-01-06
申请号：US13191940
申请日：2011-07-27
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H04Q3/00 , G06K19/07
CPC分类号： G06K19/07 , H04Q2213/13095
摘要： A protection circuit is designed to operate when the level of a DC power supply potential which is generated in a rectifier circuit is equal to or greater than a predetermined level (a reference level), so as to decrease the level of the generated DC power supply potential. On the other hand, the protection circuit is designed not to operate when the DC power supply potential which is generated in the rectifier circuit is equal to or less than the predetermined level (the reference level), so as to use the generated DC power supply potential without change. A transistor of the protection circuit includes an oxide semiconductor layer, which enables a reduction in the off-state current of the transistor and a reduction in power consumption of the protection circuit.
摘要翻译：当整流电路中产生的直流电源电位的电平等于或大于预定电平（参考电平）时，保护电路被设计成工作，以便降低所产生的直流电源的电平潜在。另一方面，当在整流电路中产生的直流电源电位等于或小于预定电平（基准电平）时，保护电路被设计为不工作，以便使用所产生的直流电源潜力没有变化。保护电路的晶体管包括氧化物半导体层，其能够降低晶体管的截止电流和降低保护电路的功耗。

15. 发明授权

US08588683B2 Electronic circuit, semiconductor device, and electronic device 有权
标题翻译：电子电路，半导体器件和电子器件
公开(公告)号：US08588683B2
公开(公告)日：2013-11-19
申请号：US13297302
申请日：2011-11-16
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H04B5/00
CPC分类号： H04B5/0081 , H04B5/0031
摘要： The electronic circuit includes a first comparator and a second comparator in which an induced electromotive force of a coil are compared with each of a first reference potential and a second reference potential and which output a pulse signal in accordance with conditions; the first signal processing circuit which outputs a first receiving rectangular wave signal and a first error signal in accordance with conditions of the pulse signal output from the first comparator and in which data held in accordance with conditions of pulse signal output from the second comparator is reset; and the second signal processing circuit which outputs a second receiving rectangular wave signal and a second error signal in accordance with conditions of the pulse signal output from the second comparator and in which data held in accordance with conditions of pulse signal output from the first comparator is reset.
摘要翻译：电子电路包括第一比较器和第二比较器，其中线圈的感应电动势与第一参考电位和第二参考电位中的每一个相比较，并且根据条件输出脉冲信号; 第一信号处理电路根据从第一比较器输出的脉冲信号的条件输出第一接收矩形波信号和第一误差信号，并且其中根据从第二比较器输出的脉冲信号的条件保持的数据被复位 ; 以及第二信号处理电路，其根据从第二比较器输出的脉冲信号的条件输出第二接收矩形波信号和第二误差信号，并且其中根据从第一比较器输出的脉冲信号的条件保持的数据是重启。

16. 发明授权

US08466740B2 Receiving circuit, LSI chip, and storage medium 有权
标题翻译：接收电路，LSI芯片和存储介质
公开(公告)号：US08466740B2
公开(公告)日：2013-06-18
申请号：US13282795
申请日：2011-10-27
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： H01L29/93
CPC分类号： H04B5/0031 , H04B5/0081
摘要： A receiving circuit with a simple circuit structure for performing wireless communication utilizing electromagnetic induction is provided. An LSI chip and a storage medium where wireless communication utilizing electromagnetic induction is performed and the circuit scale and circuit size can be reduced are provided. The following receiving circuit may be used: a parallel circuit where two diode elements whose directions are opposite are connected in parallel is used, one end of the parallel circuit is connected to the other end of a coil whose one end is connected to a ground potential line, and a capacitor is connected in series with the other end of the parallel circuit. A transistor whose leakage current is markedly reduced may be used as a diode in the receiving circuit. Such a receiving circuit may be used in an LSI chip or a storage medium.
摘要翻译：提供一种具有简单电路结构的接收电路，用于利用电磁感应进行无线通信。提供了LSI芯片和利用电磁感应的无线通信的存储介质，并且可以减小电路规模和电路尺寸。可以使用以下接收电路：并联连接两个方向相反的两个二极管元件的并联电路，并联电路的一端连接到一端连接到地电位的线圈的另一端并且电容器与并联电路的另一端串联连接。泄漏电流明显降低的晶体管可以用作接收电路中的二极管。这样的接收电路可以用于LSI芯片或存储介质。

17. 发明申请

US20120099368A1 METHOD FOR DRIVING SEMICONDUCTOR DEVICE 有权
标题翻译：驱动半导体器件的方法
公开(公告)号：US20120099368A1
公开(公告)日：2012-04-26
申请号：US13274649
申请日：2011-10-17
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： G11C11/401
CPC分类号： G11C11/4094 , G11C11/4076 , G11C11/565 , H01L27/10873 , H01L27/1203
摘要： It is an object to obtain a memory element (DRAM) storing multilevel data easily. The amount of charge accumulated in a capacitor of a memory element (DRAM) is controlled by changing the potential of a wiring (a bit line), which is used for writing data to the memory element (DRAM), in a period in which a transistor included in the memory element (DRAM) is on. Thus, multilevel data stored in the memory element (DRAM) can be obtained without a complex configuration of a semiconductor device including the memory element (DRAM).
摘要翻译：本发明的目的是获得容易存储多层数据的存储元件（DRAM）。在存储元件（DRAM）的电容器中累积的电荷量通过将用于将数据写入存储元件（DRAM）的布线（位线）的电位改变为在包含在存储元件（DRAM）中的晶体管导通。因此，可以在没有包括存储元件（DRAM）的半导体器件的复杂配置的情况下获得存储在存储元件（DRAM）中的多电平数据。

18. 发明申请

US20120026787A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
标题翻译：半导体器件及其驱动方法
公开(公告)号：US20120026787A1
公开(公告)日：2012-02-02
申请号：US13185840
申请日：2011-07-19
申请人： Hideki Uochi , Koichiro Kamata
发明人： Hideki Uochi , Koichiro Kamata
IPC分类号： G11C11/34 , H01L29/786
CPC分类号： H01L29/7869 , G11C13/0007 , G11C13/003 , G11C13/004 , G11C13/0069 , G11C2213/53 , G11C2213/76 , H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11568 , H01L29/788 , H01L29/792
摘要： A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain.
摘要翻译：晶体管包括第一和第二控制栅极以及存储栅极。存储栅极被制成具有特定电位的导体，然后制成绝缘体，从而保持电位。通过使存储门成为导体，提供要存储的数据的潜力，并使存储门成为绝缘体来写入数据。通过使存储栅极成为绝缘体来读取数据，向连接到晶体管的源极和漏极之一的读取信号线提供电位，向第一控制栅极提供读取数据的电位，然后检测电位连接到另一个源极和漏极的位线。

19. 发明申请

US20110286256A1 SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING SEMICONDUCTOR DEVICE 有权
标题翻译：用于驱动半导体器件的半导体器件和方法
公开(公告)号：US20110286256A1
公开(公告)日：2011-11-24
申请号：US13108636
申请日：2011-05-16
申请人： Koichiro Kamata
发明人： Koichiro Kamata
IPC分类号： G11C5/06 , G11C7/00 , H01L27/105
CPC分类号： G11C16/24 , G11C11/404 , G11C11/565 , G11C16/26 , H01L27/11521 , H01L27/1225 , H01L29/7869
摘要： A semiconductor device with a reduced area and capable of higher integration and larger storage capacity is provided. A multi-valued memory cell including a reading transistor which includes a back gate electrode and a writing transistor is used. Data is written by turning on the writing transistor so that a potential according to the data is supplied to a node where one of a source electrode and a drain electrode of the writing transistor and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor and holding a predetermined potential in the node. Data is read by supplying a reading control potential to a control signal line connected to one of a source electrode and a drain electrode of the reading transistor, and then detecting potential change of a reading signal line.
摘要翻译：提供了具有减小面积并且能够更高集成度和更大存储容量的半导体器件。使用包括包括背栅极和写入晶体管的读取晶体管的多值存储单元。通过接通写入晶体管来写入数据，使得根据数据的电位被提供给写入晶体管的源电极和漏电极之一以及读取晶体管的栅极电极彼此电连接的节点，然后关闭写入晶体管并保持节点中的预定电位。通过将读取控制电位提供给连接到读取晶体管的源电极和漏极之一的控制信号线，然后检测读取信号线的电位变化来读取数据。

20. 发明授权

US07821279B2 Element substrate, inspecting method, and manufacturing method of semiconductor device 有权
标题翻译：元件基板，检查方法和半导体器件的制造方法
公开(公告)号：US07821279B2
公开(公告)日：2010-10-26
申请号：US11817435
申请日：2006-03-02
申请人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
发明人： Kiyoshi Kato , Konami Izumi , Masahiko Hayakawa , Koichiro Kamata
IPC分类号： G01R31/26
CPC分类号： G01R31/2822 , G01R31/2886 , G01R31/3025 , H01L27/13
摘要： A substrate including a semiconductor layer, where characteristics of an element can be evaluated with high reliability, and an evaluating method thereof are provided. A substrate including a semiconductor layer of the invention has a closed-loop circuit in which an antenna coil and a semiconductor element are connected in series, and a surface of an area over which the circuit is formed is covered with an insulating film. By using such a circuit, a contactless inspection can be carried out. Further, a ring oscillator can be substituted for the closed-loop circuit.
摘要翻译：提供了包括可以以高可靠性评估元件的特性的半导体层的基板及其评价方法。包括本发明的半导体层的衬底具有一个闭环电路，其中天线线圈和半导体元件串联连接，并且形成有电路的区域的表面被绝缘膜覆盖。通过使用这样的电路，可以进行非接触检查。此外，环形振荡器可以代替闭环电路。

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