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11. 发明授权

US08450139B2 Method for manufacturing photoelectric conversion device 失效
标题翻译：制造光电转换装置的方法
公开(公告)号：US08450139B2
公开(公告)日：2013-05-28
申请号：US13318259
申请日：2010-04-28
申请人： Yasuaki Ishikawa , Shinya Honda , Makoto Higashikawa
发明人： Yasuaki Ishikawa , Shinya Honda , Makoto Higashikawa
IPC分类号： H01L31/18
CPC分类号： H01L31/204 , C23C16/22 , C23C16/515 , H01L31/1812 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a photoelectric conversion device including a forming a semiconductor film by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.
摘要翻译：一种制造光电转换装置的方法，包括通过等离子体CVD法形成半导体膜。半导体膜是SiGe系化合物的非晶质膜或SiGe系化合物的微晶膜。等离子体CVD通过改变施加的电力的接通或关闭时间来产生等离子体并间歇地供电来控制半导体膜的厚度方向上的带隙。功率的ON时间和OFF时间落在占空比ON时间/（ON时间+ OFF时间）×100（％）为10％以上且50％以下的范围内。

12. 发明申请

US20120052619A1 METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 失效
标题翻译：形成半导体膜的方法和制造光电转换装置的方法
公开(公告)号：US20120052619A1
公开(公告)日：2012-03-01
申请号：US13318259
申请日：2010-04-28
申请人： Yasuaki Ishikawa , Shinya Honda , Makoto Higashikawa
发明人： Yasuaki Ishikawa , Shinya Honda , Makoto Higashikawa
IPC分类号： H01L31/18 , H01L21/20
CPC分类号： H01L31/204 , C23C16/22 , C23C16/515 , H01L31/1812 , Y02E10/50 , Y02P70/521
摘要： A method for forming a semiconductor film suitable for a practical photoelectric conversion device having favorable photoelectric conversion efficiency and adapted to volume production and increased substrate area, and a method for manufacturing a photoelectric conversion device including the semiconductor film are provided. The method for forming a semiconductor film manufactures the semiconductor film including amorphous structure by a plasma CVD method. The semiconductor film is an amorphous film of SiGe-based compound or a microcrystalline film of SiGe-based compound. The plasma CVD method controls bandgap in thickness direction of the semiconductor film by varying the ON or OFF time of electric power applied to generate a plasma and intermittently supplying the power. The ON time and OFF time of the power fall in a range where the duty ratio ON time/(ON time+OFF time)×100(%) is 10% or more and 50% or less.
摘要翻译：一种形成适合于具有良好的光电转换效率并且适于批量生产和增加的衬底面积的实用光电转换装置的半导体膜的方法，以及一种制造包括该半导体膜的光电转换装置的方法。形成半导体膜的方法通过等离子体CVD法制造包括非晶结构的半导体膜。半导体膜是SiGe系化合物的非晶质膜或SiGe系化合物的微晶膜。等离子体CVD法通过改变施加的电力的导通或截止时间来产生等离子体并间歇地供电，来控制半导体膜的厚度方向的带隙。功率的ON时间和OFF时间落在占空比ON时间/（ON时间+ OFF时间）×100（％）为10％以上且50％以下的范围内。

13. 发明授权

US08111442B2 Reflection type display apparatus 失效
标题翻译：反射型显示装置
公开(公告)号：US08111442B2
公开(公告)日：2012-02-07
申请号：US12969649
申请日：2010-12-16
申请人： Hajime Ikeda , Makoto Higashikawa
发明人： Hajime Ikeda , Makoto Higashikawa
IPC分类号： G02F1/03 , G09G3/38 , B28B7/36
CPC分类号： G02F1/1506
摘要： A display apparatus using electroplating on an electrode for modulating light includes a layer formed on the electrode. The layer has an insulator with a gap therein, and conductive fine particles are dispersed in the gap.
摘要翻译：在用于调制光的电极上使用电镀的显示装置包括在电极上形成的层。该层具有在其中具有间隙的绝缘体，并且导电细颗粒分散在间隙中。

14. 发明申请

US20050189012A1 Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process 审中-公开
标题翻译：氧化锌膜，使用相同的光电器件，以及氧化锌膜的形成工艺
公开(公告)号：US20050189012A1
公开(公告)日：2005-09-01
申请号：US10693914
申请日：2003-10-28
申请人： Takaharu Kondo , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Satoru Yamada , Makoto Higashikawa , Masumitsu Iwata , Yusuke Miyamoto
发明人： Takaharu Kondo , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Satoru Yamada , Makoto Higashikawa , Masumitsu Iwata , Yusuke Miyamoto
IPC分类号： C23C14/08 , C23C28/04 , C25D9/04 , H01L31/0224 , H01L31/0352 , H01L31/0392 , H01L31/18 , H01L31/00
CPC分类号： H01L31/0392 , C23C14/086 , C23C28/044 , C23C28/30 , C23C28/323 , C23C28/324 , C23C28/345 , C25D9/04 , H01L31/022425 , H01L31/03529 , H01L31/03921 , H01L31/18 , Y02E10/50
摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.
摘要翻译：在具有多个纹理构成的氧化锌膜中，每个纹理组成由具有结构的山丘构成，其中第一表面沿着一个曲线边界在第二表面上，其中纹理成分的第一表面纹理成分的山丘具有平均倾角尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角，占至少一半以上多个纹理成分。这使得能够改善用作光电器件中的光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

15. 发明申请

US20120138134A1 STACK-TYPE PHOTOVOLTAIC ELEMENT AND METHOD OF MANUFACTURING STACK-TYPE PHOTOVOLTAIC ELEMENT 审中-公开
标题翻译：堆叠型光伏元件及制造堆叠型光伏元件的方法
公开(公告)号：US20120138134A1
公开(公告)日：2012-06-07
申请号：US13389506
申请日：2010-08-25
申请人： Makoto Higashikawa , Takako Shimizu , Shinya Honda , Yasuaki Ishikawa , Yuichi Sano
发明人： Makoto Higashikawa , Takako Shimizu , Shinya Honda , Yasuaki Ishikawa , Yuichi Sano
IPC分类号： H01L31/0687 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/02167 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A stack-type photovoltaic element with improved conversion efficiency having an intermediate layer and a method of manufacturing the same are provided. A stack-type photovoltaic element according to the present invention includes a first photovoltaic element portion (a) and a second photovoltaic element portion from a substrate side, as well as at least one intermediate layer between the first photovoltaic element portion and the second photovoltaic element portion. The intermediate layer is formed from a metal oxide film having an oxygen atom concentration/metal atom concentration ratio not lower than 0.956 and not higher than 0.976.
摘要翻译：提供具有中间层的具有改进的转换效率的叠层型光电元件及其制造方法。根据本发明的叠层型光电元件包括从基板侧的第一光电元件部分（a）和第二光电元件部分，以及在第一光电元件部分和第二光电元件之间的至少一个中间层一部分。中间层由氧原子浓度/金属原子浓度比不低于0.956且不高于0.976的金属氧化物膜形成。

16. 发明申请

US20100020386A1 REFLECTION TYPE DISPLAY APPARATUS 有权
标题翻译：反射型显示装置
公开(公告)号：US20100020386A1
公开(公告)日：2010-01-28
申请号：US12500288
申请日：2009-07-09
申请人： Hajime Ikeda , Makoto Higashikawa
发明人： Hajime Ikeda , Makoto Higashikawa
IPC分类号： G02F1/19
CPC分类号： G02F1/1506
摘要： A reflection type display apparatus wherein an electroplating is used to modulate light, at least one of a reflectance and an absorptance of a first surface, which contacts the first electrode, of an electroplating film 10 formed on the first electrode 2 and that of a second surface, which does not contact the second electrode, of the electroplating film 10 formed on the second electrode 4 are different. When the electroplating film 10 is formed on the first electrode 2, reflection light from the first surface is used for displaying. When the electroplating film 10 is formed on the second electrode 4, reflection light from the second surface is used for displaying.
摘要翻译：一种反射型显示装置，其中使用电镀来调制光，形成在第一电极2上的电镀膜10的第一表面的接触第一电极的第一表面的反射率和吸收率中的至少一个，形成在第二电极4上的电镀膜10不接触第二电极的表面是不同的。当电镀膜10形成在第一电极2上时，来自第一表面的反射光被用于显示。当电镀膜10形成在第二电极4上时，来自第二表面的反射光被用于显示。

17. 发明授权

US07071081B2 Method of forming semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07071081B2
公开(公告)日：2006-07-04
申请号：US10834836
申请日：2004-04-30
申请人： Makoto Higashikawa
发明人： Makoto Higashikawa
IPC分类号： H01L21/20
CPC分类号： H01L31/206 , H01L31/076 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a method of forming a semiconductor device that has a plurality of pin junctions comprising silicon films formed on a substrate by using a radio-frequency plasma CVD method, including: forming a first semiconductor layer; covering a surface of the first semiconductor layer with a member containing water with a content of 0.01 to 0.5 wt % so as to contact each other; removing the member; and forming a second semiconductor layer on the first semiconductor layer. According to the present invention, it is possible to efficiently form a semiconductor device having a multi-layer structure where a number of silicon thin films are laminated, to form a semiconductor device having less variation in characteristics among lots and having more excellent uniformity and characteristics, and to provide a semiconductor device excelling in adhesion and environmental resistance.
摘要翻译：本发明提供了一种形成半导体器件的方法，该半导体器件具有通过使用射频等离子体CVD法在衬底上形成的包含硅膜的多个引脚接头，包括：形成第一半导体层; 用含有0.01〜0.5重量％含水量的构件覆盖第一半导体层的表面，以便彼此接触; 删除该成员; 以及在所述第一半导体层上形成第二半导体层。根据本发明，可以有效地形成具有层叠多个硅薄膜的多层结构的半导体器件，以形成具有较少的批次之间的变化的半导体器件，并具有更优异的均匀性和特性并且提供了优异的粘合性和耐环境性的半导体器件。

18. 发明授权

US6132817A Method of manufacturing photoelectric transducer with improved ultrasonic and purification steps 失效
标题翻译：制造具有改进的超声波和净化步骤的光电传感器的方法
公开(公告)号：US6132817A
公开(公告)日：2000-10-17
申请号：US822607
申请日：1997-03-19
申请人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
发明人： Nobuo Tokutake , Masafumi Sano , Ryo Hayashi , Makoto Higashikawa
IPC分类号： H01L31/04 , H01L21/304 , H01L31/0392 , H01L31/052 , H01L31/076 , H01L31/20 , B05D3/10 , H05H1/24
CPC分类号： H01L31/076 , H01L31/03921 , H01L31/056 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.
摘要翻译：光电转换器的制造方法在导电性基板上形成功能膜。该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

19. 发明申请

US20120125406A1 STACKED PHOTOVOLTAIC ELEMENT AND METHOD OF MANUFACTURING STACKED PHOTOVOLTAIC ELEMENT 审中-公开
标题翻译：堆积的光伏元件和制造堆积的光伏元件的方法
公开(公告)号：US20120125406A1
公开(公告)日：2012-05-24
申请号：US13388615
申请日：2010-08-04
申请人： Makoto Higashikawa , Takako Shimizu , Shinya Honda , Yasuaki Ishikawa , Yuichi Sano
发明人： Makoto Higashikawa , Takako Shimizu , Shinya Honda , Yasuaki Ishikawa , Yuichi Sano
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/076 , H01L31/022425 , H01L31/046 , H01L31/0465 , Y02E10/548
摘要： Disclosed is a stacked photovoltaic element, including: a first photovoltaic element portion including at least one photovoltaic element, stacked over a substrate; an intermediate layer made of a metal oxide, stacked over the first photovoltaic element portion; a buffer layer in an amorphous state, stacked over the intermediate layer; and a second photovoltaic element portion including at least one photovoltaic element, stacked over the buffer layer, wherein a conductive layer of the second photovoltaic element portion in contact with the buffer layer is a microcrystalline layer.
摘要翻译：公开了一种堆叠的光伏元件，包括：第一光伏元件部分，其包括堆叠在衬底上的至少一个光伏元件; 由金属氧化物制成的中间层，堆叠在第一光电元件部分上; 层叠在中间层上的非晶态缓冲层; 以及第二光电元件部分，其包括层叠在缓冲层上的至少一个光电元件，其中与缓冲层接触的第二光电元件部分的导电层是微晶层。

20. 发明授权

US07876490B2 Reflection type display apparatus 有权
标题翻译：反射型显示装置
公开(公告)号：US07876490B2
公开(公告)日：2011-01-25
申请号：US12500288
申请日：2009-07-09
申请人： Hajime Ikeda , Makoto Higashikawa
发明人： Hajime Ikeda , Makoto Higashikawa
IPC分类号： G02F1/03 , G09G3/38 , B28B7/36
CPC分类号： G02F1/1506
摘要： A reflection type display apparatus using an electroplating for modulating light includes a first electrode, a second electrode, and an electrolyte solution arranged between the first and second electrodes. A first electroplating is formed from the electrolyte solution onto the first electrode by setting a first direction of current flowing between the first and second electrodes, and a second electroplating is formed from the electrolyte solution onto the second electrode by setting a second direction of current flowing between the first and second electrodes. A first surface of the first electroplating is formed on the first electrode such that the first electroplating contacts the first electrode through the first surface and is different in at least one of a light reflectance and a light absorptance from a second surface of the second electroplating formed on the second electrode such that the second electroplating does not contact the second electrode through the second surface. Displaying is performed by a reflection light from the first surface in case that the first electroplating is formed on the first electrode, while a displaying is performed by a reflection light from the second surface in case that the second electroplating is formed on the second electrode.
摘要翻译：使用用于调制光的电镀的反射型显示装置包括第一电极，第二电极和布置在第一和第二电极之间的电解质溶液。通过设置在第一和第二电极之间流动的电流的第一方向，通过设置电流流过第二电流方向的电解液将电解液形成第一电镀到第一电极上。在第一和第二电极之间。第一电镀的第一表面形成在第一电极上，使得第一电镀通过第一表面接触第一电极，并且在形成的第二电镀的第二表面的光反射率和光吸收率中的至少一个方面不同在第二电极上使得第二电镀不通过第二表面接触第二电极。在第一电镀形成在第一电极上的情况下，来自第一表面的反射光进行显示，而在第二电极上形成第二电镀的情况下，来自第二表面的反射光进行显示。

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