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11. 发明申请

US20080310061A1 Transistor with EOS protection and ESD protection circuit including the same 有权
标题翻译：具有EOS保护和ESD保护电路的晶体管包括相同
公开(公告)号：US20080310061A1
公开(公告)日：2008-12-18
申请号：US12213231
申请日：2008-06-17
申请人： Chan-Hee Jeon , Kyoung-Sik Im , Hyun-Jun Choi , Han-Gu Kim
发明人： Chan-Hee Jeon , Kyoung-Sik Im , Hyun-Jun Choi , Han-Gu Kim
IPC分类号： H02H9/00 , H01L29/78
CPC分类号： H01L27/0285 , H01L29/0692 , H01L29/0847 , H01L29/4238 , H01L29/78
摘要： A transistor with an electrical overstress (EOS) protection may include an active region, a plurality of impurity regions and a conduction pattern. The active region may be formed in a substrate. The impurity regions may be formed in the active region and arranged at a predetermined or given distance with respect to each other. The conduction pattern may be arranged between each of the impurity regions in a meandering shape, and the conduction pattern may include a center portion connected to a ground terminal. Therefore, a transistor with EOS protection, a clamp device, and an ESD protection circuit including the same may increase an on-time of a clamp device and may sufficiently discharge a charge due to the EOS by including a conduction pattern configured with gates that are connected with respect to each other in a meandering shape.
摘要翻译：具有电应力（EOS）保护的晶体管可以包括有源区，多个杂质区和导电图。有源区可以形成在衬底中。杂质区域可以形成在有源区域中并相对于彼此以预定或给定的距离布置。导电图案可以以蜿蜒的形状布置在每个杂质区之间，并且导电图案可以包括连接到接地端子的中心部分。因此，具有EOS保护的晶体管，钳位装置和包括该晶体管的ESD保护电路可以增加钳位装置的导通时间，并且可以通过包括配置有栅极的导电图案来充分地放电由于EOS引起的电荷，以蜿蜒的形状相对于彼此连接。

12. 发明授权

US07417282B2 Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode 有权
标题翻译：掺有反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件
公开(公告)号：US07417282B2
公开(公告)日：2008-08-26
申请号：US11265583
申请日：2005-11-02
申请人： Sung-Pil Jang , Han-Gu Kim , Chan-Hee Jeon
发明人： Sung-Pil Jang , Han-Gu Kim , Chan-Hee Jeon
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/7809 , H01L29/42368 , H01L29/7805
摘要： The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.
摘要翻译：本文公开的本发明是包含反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件。该器件包括从漏极区域隔离的多个源极区域。靠近漏极区域的源极区域是第一扩散结构，其中在第二导电类型的体区域中形成第二导电类型的重掺杂扩散层。另一个源区是第二扩散结构，其中在第二导电类型的体区中形成第一导电类型的重掺杂扩散层和第二导电类型的重掺杂扩散层。改变靠近漏区的源极区的杂质扩散结构作为二极管工作，从而形成ESD（静电放电）或EOS（电过压）的强电流路径。结果，可以防止装置分解。

13. 发明授权

US08358490B2 Transistor with EOS protection and ESD protection circuit including the same 有权
标题翻译：具有EOS保护和ESD保护电路的晶体管包括相同
公开(公告)号：US08358490B2
公开(公告)日：2013-01-22
申请号：US12213231
申请日：2008-06-17
申请人： Chan-Hee Jeon , Kyoung-Sik Im , Hyun-Jun Choi , Han-Gu Kim
发明人： Chan-Hee Jeon , Kyoung-Sik Im , Hyun-Jun Choi , Han-Gu Kim
IPC分类号： H02H9/00 , H02H3/20 , H02H9/04
CPC分类号： H01L27/0285 , H01L29/0692 , H01L29/0847 , H01L29/4238 , H01L29/78
摘要： A transistor with an electrical overstress (EOS) protection may include an active region, a plurality of impurity regions and a conduction pattern. The active region may be formed in a substrate. The impurity regions may be formed in the active region and arranged at a predetermined or given distance with respect to each other. The conduction pattern may be arranged between each of the impurity regions in a meandering shape, and the conduction pattern may include a center portion connected to a ground terminal. Therefore, a transistor with EOS protection, a clamp device, and an ESD protection circuit including the same may increase an on-time of a clamp device and may sufficiently discharge a charge due to the EOS by including a conduction pattern configured with gates that are connected with respect to each other in a meandering shape.
摘要翻译：具有电应力（EOS）保护的晶体管可以包括有源区，多个杂质区和导电图。有源区可以形成在衬底中。杂质区域可以形成在有源区域中并相对于彼此以预定或给定的距离布置。导电图案可以以蜿蜒的形状布置在每个杂质区之间，并且导电图案可以包括连接到接地端子的中心部分。因此，具有EOS保护的晶体管，钳位装置和包括该晶体管的ESD保护电路可以增加钳位装置的导通时间，并且可以通过包括配置有栅极的导通图案来充分地放电由于EOS引起的电荷，以蜿蜒的形状相对于彼此连接。

14. 发明申请

US20050100861A1 Dental implant and head for a compaction drill 审中-公开
标题翻译：牙科植入物和头部用于压实钻头
公开(公告)号：US20050100861A1
公开(公告)日：2005-05-12
申请号：US11019973
申请日：2004-12-23
申请人： Young-Wook Choi , Yong-Chang Choi , Shin-Koo Kim , Han-Gu Kim , Jai-Hyun Lee
发明人： Young-Wook Choi , Yong-Chang Choi , Shin-Koo Kim , Han-Gu Kim , Jai-Hyun Lee
IPC分类号： A61C13/00 , A61C8/00 , A61C3/02
CPC分类号： A61C8/0025 , A61C8/0022
摘要： A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.
摘要翻译：牙科植入物包括固定件和主体中的邻接部，并且用于压实钻头的头部被配置用于植入这种植入物。植入物包括固定义齿的上邻接部分，植入颚骨中并形成单线或双线的固定部分和形成在邻接部分和固定部分之间的沉降部分。本发明改善了植入物的稳定性，改善了固定在植入物上的骨组织的稳定性，有效地将插座与其周围环境密封，并有助于植入物和颚骨之间的结合。这是由于植入物周围的组织的早期愈合以及与周围组织接触的较大的表面积而实现的。结果，在相同的手术期间，人造冠可与植入物结合。

15. 发明申请

US20060124994A1 Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode 有权
标题翻译：掺有反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件
公开(公告)号：US20060124994A1
公开(公告)日：2006-06-15
申请号：US11265583
申请日：2005-11-02
申请人： Sung-Pil Jang , Han-Gu Kim , Chan-Hee Jeon
发明人： Sung-Pil Jang , Han-Gu Kim , Chan-Hee Jeon
IPC分类号： H01L29/76
CPC分类号： H01L29/7809 , H01L29/42368 , H01L29/7805
摘要： The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.
摘要翻译：本文公开的本发明是包含反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件。该器件包括从漏极区域隔离的多个源极区域。靠近漏极区域的源极区域是第一扩散结构，其中在第二导电类型的体区域中形成第二导电类型的重掺杂扩散层。另一个源区是第二扩散结构，其中在第二导电类型的体区中形成第一导电类型的重掺杂扩散层和第二导电类型的重掺杂扩散层。改变靠近漏极区的源极区的杂质扩散结构作为二极管工作，从而形成ESD（静电放电）或EOS（电过压）的强电流路径。结果，可以防止装置分解。

16. 发明授权

US06981873B2 Dental implant and head for a compaction drill 有权
标题翻译：牙科植入物和头部用于压实钻头
公开(公告)号：US06981873B2
公开(公告)日：2006-01-03
申请号：US10432627
申请日：2001-11-14
申请人： Young-Wook Choi , Yong-Chang Choi , Shin-Koo Kim , Han-Gu Kim , Jai-Hyun Lee
发明人： Young-Wook Choi , Yong-Chang Choi , Shin-Koo Kim , Han-Gu Kim , Jai-Hyun Lee
IPC分类号： A61C8/00
CPC分类号： A61C8/0025 , A61C8/0022
摘要： A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.
摘要翻译：牙科植入物包括固定件和主体中的邻接部，并且用于压实钻头的头部被配置用于植入这种植入物。植入物包括固定义齿的上邻接部分，植入颚骨中并形成单线或双线的固定部分和形成在邻接部分和固定部分之间的沉降部分。本发明改善了植入物的稳定性，改善了固定在植入物上的骨组织的稳定性，有效地将插座与其周围环境密封，并有助于植入物和颚骨之间的结合。这是由于植入物周围的组织的早期愈合以及与周围组织接触的较大的表面积而实现的。结果，在相同的手术期间，人造冠可与植入物结合。

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