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11. 发明申请

US20090173951A1 COMPOUND SEMICONDUCTOR DEVICE USING SiC SUBSTRATE AND ITS MANUFACTURE 有权
标题翻译：使用SiC基板的复合半导体器件及其制造
公开(公告)号：US20090173951A1
公开(公告)日：2009-07-09
申请号：US12359747
申请日：2009-01-26
申请人： Toshihide KIKKAWA , Kenji IMANISHI
发明人： Toshihide KIKKAWA , Kenji IMANISHI
IPC分类号： H01L29/24 , H01L21/20
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02439 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/007 , H01L33/12
摘要： A compound semiconductor device includes: a conductive SiC substrate; an AlN buffer layer formed on said conductive SiC substrate and containing Cl; a compound semiconductor buffer layer formed on said AlN layer which contains Cl, said compound semiconductor buffer layer not containing Cl; and a device constituent layer or layers formed above said compound semiconductor buffer layer not containing Cl.
摘要翻译：化合物半导体器件包括：导电SiC衬底; 形成在所述导电性SiC基板上并含有Cl的AlN缓冲层; 在包含Cl的所述AlN层上形成的化合物半导体缓冲层，所述化合物半导体缓冲层不含Cl; 以及在不含Cl的化合物半导体缓冲层的上方形成的器件构成层。

12. 发明申请

US20120208331A1 COMPOUND SEMICONDUCTOR DEVICE AND ITS MANUFACTURE METHOD 有权
标题翻译：复合半导体器件及其制造方法
公开(公告)号：US20120208331A1
公开(公告)日：2012-08-16
申请号：US13454349
申请日：2012-04-24
申请人： Toshihide KIKKAWA
发明人： Toshihide KIKKAWA
IPC分类号： H01L21/335
CPC分类号： H01L29/7783 , H01L29/0649 , H01L29/1029 , H01L29/2003 , H01L29/66462 , H01L29/7788
摘要： A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor substrate, a current blocking layer formed on a top surface of the conductive semiconductor substrate, made of high resistance compound semiconductor or insulator, and having openings, an active layer of compound semiconductor burying the openings and extending on an upper surface of the current blocking layer, a gate electrode formed above the openings and above the active layer, and a source electrode formed laterally spaced from the gate electrode and formed above the active layer.
摘要翻译：提供了具有优异的夹断特性的垂直型GaN系列场效应晶体管。化合物半导体器件包括导电半导体衬底，形成在导电半导体衬底的底表面上的漏电极，形成在导电半导体衬底的顶表面上的电流阻挡层，由高电阻化合物半导体或绝缘体制成，并具有开口，埋入开口并在电流阻挡层的上表面上延伸的化合物半导体的有源层，形成在开口上方和活性层上方的栅电极，以及与栅电极横向间隔开并形成在其上的源电极活动层。

13. 发明申请

US20110275199A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
公开(公告)号：US20110275199A1
公开(公告)日：2011-11-10
申请号：US13185946
申请日：2011-07-19
申请人： Toshihide KIKKAWA
发明人： Toshihide KIKKAWA
IPC分类号： H01L21/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/205 , H01L29/267 , H01L29/518 , H01L29/66462 , H01L29/7787
摘要： An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.

14. 发明申请

US20110272704A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US20110272704A1
公开(公告)日：2011-11-10
申请号：US13185888
申请日：2011-07-19
申请人： Toshihide KIKKAWA
发明人： Toshihide KIKKAWA
IPC分类号： H01L29/20
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/205 , H01L29/267 , H01L29/518 , H01L29/66462 , H01L29/7787
摘要： An AlN layer (2), a GaN buffer layer (3), a non-doped AlGaN layer (4a), an n-type AlGaN layer (4b), an n-type GaN layer (5), a non-doped AlN layer (6) and an SiN layer (7) are sequentially formed on an SiC substrate (1). At least three openings are formed in the non-doped AlN layer (6) and the SiN layer (7), and a source electrode (8a), a drain electrode (8b) and a gate electrode (19) are evaporated in these openings.
摘要翻译： AlN层（2），GaN缓冲层（3），非掺杂AlGaN层（4a），n型AlGaN层（4b），n型GaN层（5），非掺杂AlN 层（6）和SiN层（7）依次形成在SiC衬底（1）上。在非掺杂AlN层（6）和SiN层（7）中形成至少三个开口，并且源电极（8a），漏电极（8b）和栅电极（19）在这些开口中蒸发。

15. 发明申请

US20090026466A1 QUASI SINGLE CRYSTAL NITRIDE SEMICONDUCTOR LAYER GROWN OVER POLYCRYSTALLINE SiC SUBSTRATE 有权
标题翻译： QUASI单晶氮化硅半导体层多晶硅SiC衬底
公开(公告)号：US20090026466A1
公开(公告)日：2009-01-29
申请号：US12240272
申请日：2008-09-29
申请人： Toshihide KIKKAWA
发明人： Toshihide KIKKAWA
IPC分类号： H01L29/15 , H01L21/00
CPC分类号： H01L29/7787 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L29/1075 , H01L29/2003 , H01L29/66462
摘要： A compound semiconductor device is manufactured by using a polycrystalline SiC substrate, the compound semiconductor device having a buffer layer being formed on the substrate and having a high thermal conductivity of SiC and aligned orientations of crystal axes. The method for manufacturing the compound semiconductor device includes: forming a mask pattern on a polycrystalline SiC substrate, the mask pattern having an opening of a stripe shape defined by opposing parallel sides or a hexagonal shape having an apex angle of 120 degrees and exposing the surface of the polycrystalline SiC substrate in the opening; growing a nitride semiconductor buffer layer, starting growing on the polycrystalline SiC substrate exposed in the opening of the mask pattern, burying the mask pattern, and having a flat surface; and growing a GaN series compound semiconductor layer on the nitride semiconductor buffer layer.
摘要翻译：通过使用多晶SiC衬底制造化合物半导体器件，该化合物半导体器件具有缓冲层，该缓冲层形成在衬底上并具有高的SiC导热性和晶体轴取向。制造化合物半导体器件的方法包括：在多晶SiC衬底上形成掩模图案，所述掩模图案具有由相对的平行侧限定的条纹形状的开口或顶角为120度的六边形形状，的开孔中的多晶SiC衬底; 生长氮化物半导体缓冲层，开始在掩模图案的开口中暴露的多晶SiC衬底上生长，掩埋掩模图案并具有平坦表面; 以及在所述氮化物半导体缓冲层上生长GaN系化合物半导体层。

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