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11. 发明申请

US20060205107A1 Solid-state imaging device, manufacturing method of solid-state imaging device, and camera employing same 有权
标题翻译：固态成像装置，固态成像装置的制造方法以及使用该装置的相机
公开(公告)号：US20060205107A1
公开(公告)日：2006-09-14
申请号：US10536962
申请日：2004-09-13
申请人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
发明人： Yuuichi Inaba , Masahiro Kasano , Shinji Yoshida , Takumi Yamaguchi
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L27/14685 , G02B5/201 , G02B5/285 , H01L27/14621 , H04N5/2254
摘要： A solid-state imaging device includes a color filter that selectively transmits incoming light. The color filter includes two λ/4 multilayer films, and an insulation layer sandwiched between the two λ/4 multilayer films. Here, each of the λ/4 multilayer films is constituted by a plurality of dielectric layers, and the optical thickness of the insulation layer is not λ/4. Since this color filter has a smaller thickness, the solid-state imaging device has a smaller size.
摘要翻译：固态成像装置包括选择性地传输入射光的滤色器。滤色器包括两个λ/ 4多层膜和夹在两个λ/ 4多层膜之间的绝缘层。这里，每个λ/ 4多层膜由多个电介质层构成，绝缘层的光学厚度不是λ/ 4。由于该滤色器具有较小的厚度，所以固态成像装置具有较小的尺寸。

12. 发明申请

US20070125949A1 Infrared sensor and infrared sensor array 有权
标题翻译：红外传感器和红外传感器阵列
公开(公告)号：US20070125949A1
公开(公告)日：2007-06-07
申请号：US10580534
申请日：2005-09-15
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Shinji Yoshida , Yoshito Ikeda
IPC分类号： G01J5/00
CPC分类号： G01J5/24 , G01J1/46 , H04N5/33
摘要： An infrared sensor includes a series capacitor element and a reference capacitor element each exhibiting a predetermined capacitance value; an infrared-detecting capacitor element whose capacitance value varies depending on an intensity of infrared light incident on the element; and an output node being a node at which a first terminal of the series capacitor element, a first terminal of the reference capacitor element and a first terminal of the infrared-detecting capacitor element are connected to one another. A potential of the output node is brought to a reference potential by applying a predetermined voltage between a second terminal of the series capacitor element and a second terminal of the reference capacitor element; a potential of the output node is brought to a detection potential by applying the predetermined voltage between the second terminal of the series capacitor element and a second terminal of the infrared-detecting capacitor element; and the intensity of infrared light is output as a potential difference between the reference potential and the detection potential.
摘要翻译：红外线传感器包括串联电容器元件和参考电容器元件，每个都具有预定的电容值; 其电容值根据入射到元件上的红外光的强度而变化的红外线检测电容器元件; 并且输出节点是串联电容器元件的第一端子，参考电容器元件的第一端子和红外线检测电容器元件的第一端子彼此连接的节点。通过在串联电容器元件的第二端子和参考电容器元件的第二端子之间施加预定电压使输出节点的电位达到参考电位; 通过在串联电容器元件的第二端子和红外线检测电容器元件的第二端子之间施加预定电压使输出节点的电位达到检测电位; 并且将红外光的强度作为参考电位和检测电位之间的电位差输出。

13. 发明授权

US07968888B2 Solid-state image sensor and manufacturing method thereof 有权
标题翻译：固态图像传感器及其制造方法
公开(公告)号：US07968888B2
公开(公告)日：2011-06-28
申请号：US11422708
申请日：2006-06-07
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H01L31/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H01L27/14632 , H01L27/14685 , H01L27/14687
摘要： An object of the present invention is to provide a small solid-state image sensor which realizes significant improvement in sensitivity. The solid-state image sensor of the present invention includes a semiconductor substrate in which photoelectric conversion units are formed, a light-blocking film which is formed above the semiconductor substrate and has apertures formed so as to be positioned above respective photoelectric conversion units, and a high refractive index layer formed in the apertures. Here, each aperture has a smaller aperture width than a maximum wavelength in a wavelength of light in a vacuum converted from a wavelength of the light entering the photoelectric conversion unit through the apertures, and the high refractive index is made of a high refractive index material having a refractive index which allows transmission of light having the maximum wavelength through the aperture.
摘要翻译：本发明的目的是提供一种实现敏感度显着提高的小型固态图像传感器。本发明的固态图像传感器包括形成有光电转换单元的半导体衬底，形成在半导体衬底之上并具有形成为位于各个光电转换单元之上的孔的遮光膜，以及形成在孔中的高折射率层。这里，每个孔径在从通过孔进入光电转换单元的光的波长转换的真空中的光波长中的最大波长较小，高折射率由高折射率材料具有折射率，其允许通过孔径传输具有最大波长的光。

14. 发明申请

US20090225204A1 SOLID STATE IMAGING DEVICE AND CAMERA 审中-公开
标题翻译：固态成像装置和摄像机
公开(公告)号：US20090225204A1
公开(公告)日：2009-09-10
申请号：US12096952
申请日：2006-06-27
申请人： Yuuichi Inaba , Takumi Yamaguchi , Yoshiyuki Matsunaga
发明人： Yuuichi Inaba , Takumi Yamaguchi , Yoshiyuki Matsunaga
IPC分类号： H04N5/335
CPC分类号： G02B5/28 , G02B3/0043 , G02B5/201 , G02B5/282 , H01L27/14621 , H01L27/14627
摘要： A wavelength separation filter 206 is composed of λ/4 multilayer films 302 to 304 that are sequentially laminated on a multilayer interference filter 301. The multilayer interference filter 301 is composed of two λ/4 multilayer films with a dielectric layer sandwiched therebetween. Also, the multilayer interference filter 301 is composed of parts 301B, 301G, 301R that transmit blue light, green light, and red light, respectively. The multilayer interference filter 301 wavelength-separates visible light. The λ/4 multilayer films 302 to 304 reflect light having a wavelength within wavelength ranges having set-wavelengths of 800 nm, 900 nm, and 1000 nm respectively. In other words, the λ/4 multilayer films 302 to 304 reflect near infrared light.
摘要翻译：波长分离滤光器206由依次层叠在多层干涉滤光器301上的λ/ 4多层膜302〜304构成。多层干涉滤光器301由夹在其间的电介质层的两个λ/ 4多层膜构成。此外，多层干涉滤光器301分别由透射蓝光，绿光和红光的部分301B，301G，301R组成。多层干涉滤光器301对可见光进行波长分离。 λ/ 4多层膜302至304分别反射具有波长范围为800nm，900nm和1000nm的波长范围内的波长的光。换句话说，λ/ 4多层膜302至304反射近红外光。

15. 发明授权

US07569906B2 Method for fabricating condenser microphone and condenser microphone 有权
标题翻译：制造电容式麦克风和电容麦克风的方法
公开(公告)号：US07569906B2
公开(公告)日：2009-08-04
申请号：US11702531
申请日：2007-02-06
申请人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
发明人： Mitsuyoshi Mori , Keisuke Tanaka , Takumi Yamaguchi , Takuma Katayama
IPC分类号： H01L29/00 , H01L29/84
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译：第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。

16. 发明申请

US20090014759A1 SOLID STATE IMAGING APPARATUS AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090014759A1
公开(公告)日：2009-01-15
申请号：US12233080
申请日：2008-09-18
申请人： Mitsuyoshi MORI , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
发明人： Mitsuyoshi MORI , Mikiya Uchida , Kazuo Fujiwara , Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译：本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

17. 发明申请

US20090009621A1 Solid-State Imaging Device, Signal Processing Method, and Camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US20090009621A1
公开(公告)日：2009-01-08
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H04N5/228 , H04N5/335
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

18. 发明授权

US07423271B2 Infrared sensor and method for driving the same 有权
标题翻译：红外线传感器及其驱动方法
公开(公告)号：US07423271B2
公开(公告)日：2008-09-09
申请号：US11665603
申请日：2006-06-09
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Takayoshi Yamada
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga , Takayoshi Yamada
IPC分类号： G01J5/34 , H01L27/14
CPC分类号： H01L27/14649 , G01J5/34 , G01J2005/0048 , G01J2005/345 , G01V8/10 , H01L27/1443 , H04N5/33
摘要： An infrared sensor includes a plurality of reference pixel units 2 arranged in a matrix pattern and series capacitor elements 14 provided in a one-to-one correspondence with the reference pixel units 2. The reference pixel units 2 each include an output line 30, a reference capacitor element 13 connected via a switching element 17 between the output line and the ground, and a plurality of infrared-detecting capacitor elements 12 connected via associated switching elements 16 between the output line 30 and the ground. Each series capacitor element 14 is connected to the associated output line 30.
摘要翻译：红外线传感器包括以矩阵图案排列的多个参考像素单元2和与参考像素单元2一一对应地设置的串联电容器元件14。参考像素单元2各自包括输出线30，经由输出线和地之间的开关元件17连接的参考电容器元件13以及通过相关联的开关元件16连接在输出线和地之间的多个红外线检测电容器元件12 30号线和地面。每个串联电容器元件14连接到相关联的输出线30。

19. 发明授权

US07352020B2 Solid-state image pickup device, and manufacturing method thereof 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07352020B2
公开(公告)日：2008-04-01
申请号：US10526564
申请日：2002-09-12
申请人： Takumi Yamaguchi
发明人： Takumi Yamaguchi
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H04N5/3597 , H04N5/3742
摘要： The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging region 10 and a driving region 20 both formed on a p-type silicon substrate (hereinafter called an “Si substrate”) 31. The imaging region 10 includes six pixels 11 to 16 disposed in a shape of a matrix having 2 rows and 3 columns. The driving region 20 includes a timing generation circuit 21, a vertical shift resistor 22, a horizontal shift resistor 23, a pixel selection circuit 24, and so on. All transistors included in the pixels 11 to 16 in the imaging region and the circuits 21 to 24 in the driving circuit region 20 are of n-channel MOS type.
摘要翻译：本发明的目的在于提供一种在驱动操作期间实现较少漏电流，高图像质量和低噪声的固态成像装置及其制造方法。 MOS型成像装置1包括在p型硅衬底（以下称为“Si衬底”）31上形成的成像区域10和驱动区域20。成像区域10包括以具有2行和3列的矩阵的形状设置的六个像素11至16。驱动区域20包括定时生成电路21，垂直移位电阻22，水平移动电阻23，像素选择电路24等。包括在成像区域中的像素11至16中的所有晶体管和驱动电路区域20中的电路21至24均为n沟道MOS型。

20. 发明申请

US20070296843A1 Solid-state imaging device and camera 审中-公开
标题翻译：固态成像装置和相机
公开(公告)号：US20070296843A1
公开(公告)日：2007-12-27
申请号：US11808297
申请日：2007-06-08
申请人： Shigetaka Kasuga , Katsumi Takeda , Takumi Yamaguchi , Yoshiyuki Matsunaga , Takahiko Murata , Takayoshi Yamada
发明人： Shigetaka Kasuga , Katsumi Takeda , Takumi Yamaguchi , Yoshiyuki Matsunaga , Takahiko Murata , Takayoshi Yamada
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14603 , H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627
摘要： A solid-state imaging device includes a plurality of pixels arranged two-dimensionally. Each pixel includes a photoelectric converter (2) for converting incident light to a charge, and a gray filter (6a, 6b, 6c) having a visible light transmittance that is different depending on the photoelectric converter (2). According to this construction, the plurality of pixels have different sensitivities to incident light. By combining pixel signals obtained from three pixels having different sensitivities, a wider dynamic range can be achieved.
摘要翻译：固态成像装置包括二维排列的多个像素。每个像素包括用于将入射光转换成电荷的光电转换器（2）和具有根据光电转换器（2）不同的可见光透射率的灰色滤光器（6a，6b，6c）。根据该结构，多个像素对入射光具有不同的灵敏度。通过组合从具有不同灵敏度的三个像素获得的像素信号，可以实现更宽的动态范围。

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