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    • 20. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08496781B2
    • 2013-07-30
    • US11182793
    • 2005-07-18
    • Kenetsu YokogawaKenji MaedaMasaru Izawa
    • Kenetsu YokogawaKenji MaedaMasaru Izawa
    • C23C16/00C23F1/00H01L21/306H05B31/26
    • H01J37/32174H01J37/32082
    • The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.
    • 本发明提供了一种基于干蚀刻装置的等离子体处理装置,其可以抑制由溅射引起的工件对真空室的壁的污染,异物的发生,运行成本的增加 更换真空室的壁和操作速度的恶化。 根据本发明的等离子体处理装置基于具有平行板结构的干式蚀刻装置,其特征在于,具有高阻抗频率的低通滤波器,用于产生放电的高频电源的频率,具有较小的直接阻抗 电流和接地连接到用于产生放电的电极,其布置在与工件相对的位置,并且用于产生放电的高频电源被连接到该电极上,或者具有对直流电阻和接地电阻小的低通滤波器, 与其串联连接的直流电源连接到用于产生放电的电极。