专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07133431B2 Semiconductor laser device and method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07133431B2
公开(公告)日：2006-11-07
申请号：US10629670
申请日：2003-07-30
申请人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
发明人： Kazutoshi Onozawa , Tetsuzo Ueda , Daisuke Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/02252 , G11B7/1275 , G11B7/22 , G11B2007/0006 , H01L24/95 , H01L2224/95085 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/10329 , H01L2924/10349 , H01L2924/12042 , H01L2924/14 , H01S5/02236 , H01S5/4031 , H01L2924/00
摘要： A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.
摘要翻译：半导体激光器件包括由例如硅制成并且在其主表面中形成有彼此间隔一定距离的第一和第二凹部的衬底。设置在第一凹部中的是发射红外激光束的功能块形式的第一半导体激光器芯片。设置在第二凹部中的是发射红色激光束的功能块形式的第二半导体激光器芯片。

12. 发明申请

US20060203860A1 Laser device and laser module 审中-公开
标题翻译：激光设备和激光模块
公开(公告)号：US20060203860A1
公开(公告)日：2006-09-14
申请号：US11352948
申请日：2006-02-13
申请人： Kenichi Inoue , Kazuhiko Yamanaka , Kazutoshi Onozawa , Daisuke Ueda
发明人： Kenichi Inoue , Kazuhiko Yamanaka , Kazutoshi Onozawa , Daisuke Ueda
IPC分类号： H01S3/10
CPC分类号： H01S5/02292 , H01S5/005 , H01S5/0071 , H01S5/02248 , H01S5/4012 , H01S5/4087
摘要： A laser module includes a substrate 1, a first laser element 2 placed on the substrate 1, a second laser element 3 placed with an output surface opposed to the first laser element 2 on the substrate 1, and a mirror 7 placed between the first laser element 2 and the second laser element 3. The mirror 7 has a reflective surface capable of reflecting output light from the first laser element 2 or the second laser element 3 in a predetermined direction, and is placed so as to move or rotate between a first position capable of reflecting the output light from the first laser element 2 and a second position capable of reflecting the output light from the second laser element 3. Thus, a laser module can be provided in which high precision, low cost, and miniaturization can be realized.
摘要翻译：激光模块包括基板1，放置在基板1上的第一激光元件2，在基板1上设置有与第一激光元件2相对的输出面的第二激光元件3，以及配置在第一激光器元件2和第二激光元件3。反射镜7具有反射表面，该反射表面能够沿预定方向反射来自第一激光元件2或第二激光元件3的输出光，并且能够在能够反射来自第一激光元件2或第二激光元件3的输出光的第一位置之间移动或旋转第一激光元件2和能够反射来自第二激光元件3的输出光的第二位置。因此，可以提供可以实现高精度，低成本和小型化的激光模块。

13. 发明授权

US07045446B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07045446B2
公开(公告)日：2006-05-16
申请号：US10840422
申请日：2004-05-07
申请人： Kazutoshi Onozawa , Daisuke Ueda , Tomoaki Tojo
发明人： Kazutoshi Onozawa , Daisuke Ueda , Tomoaki Tojo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L24/95 , H01L21/67121 , H01L25/50 , H01L2224/95085 , H01L2224/95136 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01033 , H01L2924/01049 , H01L2924/01078 , H01L2924/10329 , H01L2924/10349 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.
摘要翻译：在使用流体自组装技术的半导体器件制造方法中，其中在液体中，多个半导体元件以自对准的方式安装在其上形成有多个凹部的基板上，插入的突出的部分基板的各凹部形成在各半导体元件的下部，将半导体元件已经被分散的液体间歇地注入到基板上，并且使基板在液体不倒

14. 发明申请

US20050133879A1 Solid-state imaging device, signal processing device, camera, and spectral device 审中-公开
标题翻译：固态成像装置，信号处理装置，照相机和光谱装置
公开(公告)号：US20050133879A1
公开(公告)日：2005-06-23
申请号：US10818922
申请日：2004-04-05
申请人： Takumi Yamaguti , Daisuke Ueda , Takuma Katayama , Motonari Katsuno , Shinji Yoshida
发明人： Takumi Yamaguti , Daisuke Ueda , Takuma Katayama , Motonari Katsuno , Shinji Yoshida
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0232 , H04N5/335 , H04N9/04
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14636 , H04N9/045
摘要： A light shield film is formed above a photodiode that converts received light to an electric signal, with an insulating film sandwiched therebetween. An aperture is formed in the cutoff film so as to cut off light of at least a predetermined wavelength in a wavelength range of light to which the photodiode is sensitive, and enable light below the predetermined wavelength to pass through.
摘要翻译：在将光接收的光转换成电信号的光电二极管的上方形成有遮光膜，其间夹有绝缘膜。在截止膜中形成孔，以便在光敏二极管的光的波长范围内截止至少预定波长的光，并使得低于预定波长的光能够通过。

15. 发明申请

US20080128619A1 Infrared Imaging Element 审中-公开
标题翻译：红外成像元件
公开(公告)号：US20080128619A1
公开(公告)日：2008-06-05
申请号：US10589619
申请日：2004-02-16
申请人： Shinji Yoshida , Daisuke Ueda
发明人： Shinji Yoshida , Daisuke Ueda
IPC分类号： G01J1/02
CPC分类号： H01C7/045 , G01J5/20 , H01C7/06 , H01L27/16 , H01L31/09 , H01L37/00 , H01L41/094 , H04N5/33
摘要： To provide an infrared imaging device having a higher temperature resolution that includes a plurality of pixel cells (1a-1d) arranged one-dimensionally or two-dimensionally, in which each pixel cell includes a thermal resistor composed of a strongly-correlated electron material.
摘要翻译：为了提供具有更高温度分辨率的红外成像装置，其包括一维或二维排列的多个像素单元（1a-1d），其中每个像素单元包括由强相关电子材料。

16. 发明授权

US08582277B2 Laminated type ceramic electronic parts 有权
标题翻译：层压型陶瓷电子零件
公开(公告)号：US08582277B2
公开(公告)日：2013-11-12
申请号：US13300952
申请日：2011-11-21
申请人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
发明人： Hirobumi Tanaka , Makoto Endo , Satoko Ueda , Daisuke Ueda , Shogo Murosawa , Daisuke Yoshida , Kenta Ono , Minoru Ogasawara , Tatsuya Kikuchi
IPC分类号： H01G4/12 , C04B35/468
CPC分类号： H01G4/1227 , H01G4/1281 , H01G4/30
摘要： A multilayer ceramic electronic component comprising an element body in which a dielectric layer and an internal electrode layer are stacked. The dielectric layer is constituted from a dielectric ceramic composition including; a compound having a perovskite structure expressed by a formula of ABO3 (A is at least one selected from Ba, Ca, and Sr; B is at least one selected from Ti, Zr, and Hf); an oxide of Mg; an oxide of rare earth elements including Sc and Y; and an oxide including Si. The dielectric ceramic composition comprises a plurality of dielectric particles and a grain boundary present in between the dielectric particles. In the grain boundary, when content ratios of Mg and Si are set to D(Mg) and D(Si) respectively, D(Mg) is 0.2 to 1.8 wt % in terms of MgO, and D(Si) is 0.4 to 8.0 wt % in terms of SiO2.
摘要翻译：一种多层陶瓷电子部件，其特征在于，具有层叠有电介质层和内部电极层的元件体。电介质层由介电陶瓷组合物构成，包括：具有由式ABO 3表示的钙钛矿结构的化合物（A是选自Ba，Ca和Sr中的至少一种; B是选自Ti，Zr和Hf中的至少一种）; Mg的氧化物; 包括Sc和Y的稀土元素的氧化物; 和包含Si的氧化物。电介质陶瓷组合物包含存在于电介质颗粒之间的多个电介质颗粒和晶界。在晶界中，当Mg和Si的含量比分别设定为D（Mg）和D（Si）时，D（Mg）以MgO计为0.2〜1.8重量％，D（Si）为0.4〜8.0 重量％。

17. 发明授权

US08307772B2 Sewing machine 有权
标题翻译：缝纫机
公开(公告)号：US08307772B2
公开(公告)日：2012-11-13
申请号：US12656236
申请日：2010-01-21
申请人： Akifume Nakashima , Daisuke Ueda
发明人： Akifume Nakashima , Daisuke Ueda
IPC分类号： D05B23/00
CPC分类号： D05C7/00 , D05B29/06 , D05D2303/00
摘要： A sewing machine including a presser foot that presses a workpiece, a presser bar that has a lower end allowing detachable attachment of the presser foot; a presser bar vertically moving mechanism that moves the presser bar up and down; a presser bar driver that drives the presser bar vertically moving mechanism; a needle plate that has an upper surface for placing the workpiece; a projecting element that is detachably attached to the presser bar and that is driven up and down with the presser bar as the presser bar is driven up and down by the presser bar driver through the presser bar vertically moving mechanism to form embosses on the workpiece by downwardly pressing the workpiece; and a receiving section that is provided on the upper surface of the needle plate that opposes the projecting element to receive a tip of the projecting element.
摘要翻译：一种缝纫机，包括按压工件的压脚，具有下端的压脚，允许压脚可拆卸地附接; 按压杆上下移动机构; 一个驱动压杆垂直移动机构的压脚驱动器; 具有用于放置所述工件的上表面的针板; 突出元件，其可拆卸地附接到压脚杆，并且当压杆作为压杆时上下驱动，压杆驱动器通过压杆垂直移动机构被上下驱动，以在工件上形成压花，以通过向下按压工件; 以及接收部，其设置在与所述突出元件相对的所述针板的上表面上，以容纳所述突出元件的前端。

18. 发明授权

US08203376B2 Semiconductor device and method for driving the same 有权
标题翻译：半导体装置及其驱动方法
公开(公告)号：US08203376B2
公开(公告)日：2012-06-19
申请号：US12445390
申请日：2007-11-20
申请人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Tatsuo Morita , Manabu Yanagihara , Hidetoshi Ishida , Yasuhiro Uemoto , Hiroaki Ueno , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H03K17/687
CPC分类号： H01L29/7787 , H01L27/0605 , H01L29/0619 , H01L29/1066 , H01L29/2003 , H01L29/432 , H01L29/739 , H01L29/8124
摘要： A semiconductor device includes a semiconductor layer stack 13 formed on a substrate 11 and having a channel region, a first electrode 16A and a second electrode 16B formed spaced apart from each other on the semiconductor layer stack 13, a first gate electrode 18A formed between the first electrode 16A and the second electrode 16B, and a second gate electrode 18B formed between the first gate electrode 18A and the second electrode 16B. A first control layer 19A having a p-type conductivity is formed between the semiconductor layer stack 13 and the first gate electrode 18A.
摘要翻译：半导体器件包括形成在衬底11上并具有沟道区的半导体层堆叠13，在半导体层叠层13上彼此隔开形成的第一电极16A和第二电极16B，形成在第一栅电极18A之间的第一栅电极18A 第一电极16A和第二电极16B，以及形成在第一栅电极18A和第二电极16B之间的第二栅电极18B。在半导体层堆叠13和第一栅电极18A之间形成具有p型导电性的第一控制层19A。

19. 发明授权

US08134191B2 Solid-state imaging device, signal processing method, and camera 有权
标题翻译：固态成像装置，信号处理方法和相机
公开(公告)号：US08134191B2
公开(公告)日：2012-03-13
申请号：US12160291
申请日：2006-07-11
申请人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
发明人： Takumi Yamaguchi , Yuuichi Inaba , Daisuke Ueda , Yoshiyuki Matsunaga
IPC分类号： H01L31/09
CPC分类号： H04N9/045 , H04N5/33 , H04N5/332
摘要： A solid-state imaging apparatus that performs color imaging using visible light and imaging using infrared light, the solid-state imaging apparatus including a plurality of two-dimensionally arranged pixel cells, in each of which a filter mainly transmits one of visible light and infrared light, wherein filters are arranged such that a first unit of arrangement where a plurality of filters that mainly transmit visible light are arranged and a second unit of arrangement where a filter that mainly transmits visible light and a filter that mainly transmits infrared light are arranged are alternately arranged in both a row direction and a column direction. Also, in the first unit of arrangement are arranged filters including three kinds of filters each transmitting one of red light, green light and blue light and in the second unit of arrangement are arranged four kinds of filters each transmitting one of red light, green light, blue light and infrared light.
摘要翻译：一种使用可见光进行彩色成像并使用红外光成像的固态成像装置，所述固态成像装置包括多个二维排列的像素单元，每个像素单元中的每一个主要透过可见光和红外线之一光，其中滤光器被布置成使得布置有主要透射可见光的多个滤光器的第一布置单元和布置有主要透射可见光的滤光器的第二单元和布置有主要透射红外光的滤光器的布置的第二单元是布置的，交替地排列在行方向和列方向上。此外，在第一单元中布置有包括发射红光，绿光和蓝光中的一种的三种滤光器的滤色器，并且在第二种布置中布置了四种滤色片，每种滤色片透过红光，绿光，蓝光和红外灯。

20. 发明授权

US08076698B2 Transistor and method for operating the same 有权
标题翻译：晶体管及其操作方法
公开(公告)号：US08076698B2
公开(公告)日：2011-12-13
申请号：US11995040
申请日：2006-06-27
申请人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
发明人： Daisuke Ueda , Tsuyoshi Tanaka , Yasuhiro Uemoto , Tetsuzo Ueda , Manabu Yanagihara , Masahiro Hikita , Hiroaki Ueno
IPC分类号： H01L31/0328
CPC分类号： H01L29/739 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7786
摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.
摘要翻译：在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压，孔被注入到通道中以增加在通道中流动的电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式